52A32
Abstract: CEM9926A
Text: CEM9926A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 20V, 6A, RDS ON = 30mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
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CEM9926A
52A32
CEM9926A
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CEM9926A
Abstract: No abstract text available
Text: CEM9926A PRELIMINARY Dual N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 20V , 6A , RDS ON =30m Ω @VGS=4.5V. RDS(ON)=40m Ω @VGS=2.5V. D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability.
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CEM9926A
300ms
CEM9926A
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CEM9926
Abstract: CEM9
Text: CEM9926 Aug. 1998 Dual N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 20V , 6A , RDS ON =30m Ω @VGS=4.5V. RDS(ON)=40m Ω @VGS=2.5V. D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability.
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CEM9926
300ms
CEM9926
CEM9
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CEM9926
Abstract: No abstract text available
Text: CEM9926 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 20V, 6A, RDS ON = 30mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
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CEM9926
CEM9926
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52A32
Abstract: CEM9926A
Text: CEM9926A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6A, RDS ON = 27mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
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CEM9926A
52A32
CEM9926A
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CEM9926A
Abstract: No abstract text available
Text: CEM9926A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 20V, 6A, RDS ON = 30mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
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CEM9926A
CEM9926A
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Untitled
Abstract: No abstract text available
Text: AIC1802 Two-Cell Lithium-Ion Battery Protection IC FEATURES DESCRIPTION Ultra-Low Quiescent Current at 10µA VCC=7V, VC=3.5V . Ultra-Low Power-Down Current at 0.2µA (VCC =3.8V, VC=1.9V). Wide Supply Range: 2 to 18V. Precision Overcharge Protection Voltage
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AIC1802
AIC1802A
AIC1802B
AIC1802C
AIC1802
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AIC1802
Abstract: overcharge protection circuit diagram CEM9926 48v 30 a battery charger cell phone detector AIC1802-ACSTR
Text: AIC1802 Two-Cell Lithium-Ion Battery Protection IC n FEATURES l l n DESCRIPTION Ultra-Low Quiescent Current at 10µA V CC =7V, The AIC1802 battery protection IC is designed VC =3.5V . to protect lithium-ion batteries from damage due Ultra-Low Power-Down Current at 0.2µA (V CC
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AIC1802
AIC1802
AIC1802A
AIC1802B
overcharge protection circuit diagram
CEM9926
48v 30 a battery charger
cell phone detector
AIC1802-ACSTR
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overcharge protection circuit diagram
Abstract: CEM9926 48V BATTERY CHARGER cell phone detector overcharge voltage detection 48v battery charger lead transistor D 2395 over-charge
Text: SS6802 TWO-CELL LITHIUM-ION BATTERY PROTECTION IC FEATURES DESCRIPTION Ultra-Low Quiescent Current at 10µA VCC=7V, VC=3.5V . Ultra-Low Power-Down Current at 0.2µA (VCC =3.8V, VC=1.9V). Wide Supply Range: 2 to 18V. Precision Overcharge Protection Voltage
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SS6802
SS6802A
SS6802B
SS6802C
SS6802
overcharge protection circuit diagram
CEM9926
48V BATTERY CHARGER
cell phone detector
overcharge voltage detection
48v battery charger lead
transistor D 2395
over-charge
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STM9435
Abstract: AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC
Text: South Sea Semiconductor Cross Reference Guide Competitor SSS Competitor Part Number Part Number STU3055L2 APM2034NU ANPEC STU4030NL APM2512NU ANPEC STU4030NL APM3011NU ANPEC STU3030PL APM3020PU ANPEC APM3023N ANPEC STU3030NL APM4210K ANPEC SDM4410 APM4220K ANPEC
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STU3055L2
APM2034NU
STU4030NL
APM2512NU
APM3011NU
STU3030PL
APM3020PU
APM3023N
STU3030NL
STM9435
AP4411
ao3411
EQUIVALENT STM8405
AP40N03H
AP4936M
stm4532
FDD6685
AP9960M
APEC
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winband
Abstract: 37-U69000-03 ba9743a sis 630 R2S35 29LV020 BA9743 SIS630S 2n2222 -331 2n2907 SOT23
Text: 5 4 3 +2.5V +1.5V R277 150_1% 1u Y33 C37 THERMDP THERMDN W37 AK20 AN19 AN25 AH4 X4 AN17 AN29 AK28 AH22 AH26 6 CPUCLK 2,3 HLOCK# 2,3 DEFER# 2,3 HTRDY# 2,3 CPURST# 2,3 BPRI# 2,3 BREQ0# 2,3 RS#2 2,3 RS#1 2,3 RS#0 +1.5V 56 HA#35 R76 56 HA#34 R54 56 HA#33 R70 56
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N340S8
37-U69000-03
22u/25V-2220
CEM4431-SO8
BAS16
470u/25V
2N7002
10u/10V
7u/16V
2u1H-55050-smd
winband
37-U69000-03
ba9743a
sis 630
R2S35
29LV020
BA9743
SIS630S
2n2222 -331
2n2907 SOT23
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semiconductor cross reference
Abstract: AP40N03H STM8405 AP4411 AP60N03H ap4503M Fairchild Cross Reference ao3411 AO3401 cross reference anpec Cross Reference
Text: South Sea Semiconductor Cross Reference Guide Competitor SSS Competitor Part Number Part Number STU3055L2 APM2034NU ANPEC STU4030NL APM2512NU ANPEC STU4030NL APM3011NU ANPEC STU3030PL APM3020PU ANPEC APM3023N ANPEC STU3030NL APM4210K ANPEC SDM4410 APM4220K ANPEC
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STU3055L2
APM2034NU
STU4030NL
APM2512NU
APM3011NU
STU3030PL
APM3020PU
APM3023N
STU3030NL
semiconductor cross reference
AP40N03H
STM8405
AP4411
AP60N03H
ap4503M
Fairchild Cross Reference
ao3411
AO3401 cross reference
anpec Cross Reference
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CEP50N06
Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223
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O-251/TO-252
O-220/TO-263
OT-23
OT-223
OT-89
2928-8J
O-220FM
CEP50N06
CEP83A3 equivalent
cep83a3
CEF02N6A
cep6355
FQPF8N60C equivalent
CEF04N6 equivalent
CEP63A3
CEP20N06
cep76139
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overcharge protection circuit diagram
Abstract: overcharge protection circuit diagram for 5 V overcharge voltage detection overdischarge AIC1802 AIC1802ACS AIC1802BCS AIC1802CCS CEM9926 48v Charger Diagram
Text: AIC1802 Two-Cell Lithium-Ion Battery Protection IC n FEATURES l l n DESCRIPTION Ultra-Low Quiescent Current at 10µA V CC =7V, The AIC1802 battery protection IC is designed VC =3.5V . to protect lithium-ion batteries from damage due Ultra-Low Power-Down Current at 0.2µA (V CC
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AIC1802
AIC1802
AIC1802A
AIC1802B
overcharge protection circuit diagram
overcharge protection circuit diagram for 5 V
overcharge voltage detection
overdischarge
AIC1802ACS
AIC1802BCS
AIC1802CCS
CEM9926
48v Charger Diagram
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DS-1802G-01
Abstract: CEM9926 1802G01 overdischarge AIC1802 MS-012AA 48v battery charger lead
Text: AIC1802 Two-Cell Lithium-Ion Battery Protection IC FEATURES DESCRIPTION Ultra-Low Quiescent Current at 10µA VCC=7V, VC=3.5V . Ultra-Low Power-Down Current at 0.2µA (VCC =3.8V, VC=1.9V). Wide Supply Range: 2 to 18V. Precision Overcharge Protection Voltage
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AIC1802
AIC1802A
AIC1802B
AIC1802C
AIC1802
DS-1802G-01
CEM9926
1802G01
overdischarge
MS-012AA
48v battery charger lead
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Untitled
Abstract: No abstract text available
Text: AIC1802 Two-Cell Lithium-Ion Battery Protection IC FEATURES DESCRIPTION Ultra-Low Quiescent Current at 10µA VCC=7V, VC=3.5V . Ultra-Low Power-Down Current at 0.2µA (VCC =3.8V, VC=1.9V). Wide Supply Range: 2 to 18V. Precision Overcharge Protection Voltage
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AIC1802
AIC1802A
AIC1802B
AIC1802C
AIC1802
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CEM9926
Abstract: No abstract text available
Text: CEM9926 Aug. 1998 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES • 2 0 V , 6 A , RDS ON =30m Q @ V gs = 4 .5 V . R ds (ON)=40iti Q @ V g s = 2 .5 V . Di Di D2 D2 • Super high dense cell design for extremely low R ds (o n ). • High power and current handing capability.
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CEM9926
40iti
300ns
CEM9926
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