CEBF630B Search Results

CEBF630B Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
CEBF630B		Chino-Excel Technology	N-Channel Enhancement Mode Field Effect Transistor		Original	PDF

CEBF630B Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
1m810 Abstract: CEPF630 Text: CEPF630B/CEBF630B PRELIMINARY 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 200V , 9A , RDS ON = 0.4 Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.	Original	CEPF630B/CEBF630B O-220 O-263 1m810 CEPF630	PDF
CEBF630B Abstract: CEFF630B CEIF630B CEPF630B CEBF630 Text: CEPF630B/CEBF630B CEIF630B/CEFF630B N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEPF630B 200V 0.4Ω 9A 10V CEBF630B 200V 0.4Ω 9A 10V CEIF630B 200V 0.4Ω 9A 10V CEFF630B 200V 0.4Ω 9A e 10V D Super high dense cell design for extremely low RDS(ON).	Original	CEPF630B/CEBF630B CEIF630B/CEFF630B CEPF630B CEBF630B CEIF630B CEFF630B O-220 O-263 O-262 O-220F CEBF630B CEFF630B CEIF630B CEPF630B CEBF630	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

1m810

Abstract: CEPF630
Text: CEPF630B/CEBF630B PRELIMINARY 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 200V , 9A , RDS ON = 0.4 Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.

Original

CEPF630B/CEBF630B O-220 O-263 1m810 CEPF630

PDF

CEBF630B

Abstract: CEFF630B CEIF630B CEPF630B CEBF630
Text: CEPF630B/CEBF630B CEIF630B/CEFF630B N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEPF630B 200V 0.4Ω 9A 10V CEBF630B 200V 0.4Ω 9A 10V CEIF630B 200V 0.4Ω 9A 10V CEFF630B 200V 0.4Ω 9A e 10V D Super high dense cell design for extremely low RDS(ON).