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    CEB6030LS2 Search Results

    CEB6030LS2 Datasheets (1)

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    CEB6030LS2 Chino-Excel Technology N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF

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    P603

    Abstract: B6030L CEP6030LS2 CEB6030LS2
    Text: CEP6030LS2/CEB6030LS2 ELEC TR IC AL CHARACTERISTICS Tc=25°C unless otherwise noted Parameter Symbol Condition Min Drain-Source Breakdown Voltage BVdss VgSz OV, ID=250|oA 30 Zero Gate Voltage Drain Current Idss Vds=24V, Vgs =0V Gate-Body Leakage Igss Vgs=±16V,Vds=0V


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    PDF CEP6030LS2/CE B6030LS2 250hA P603 B6030L CEP6030LS2 CEB6030LS2