Untitled
Abstract: No abstract text available
Text: Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA 25742 , Web: www.alphawire.com Customer Specification PART NO. 2826/4 Construction Diameters (In) 1) Component 1 4 X 1 COND a) Conductor 16 (19/29) AWG SPC 0.056 b) Insulation 0.012" Wall, Nom. PTFE
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MIL-W-16878/4
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Untitled
Abstract: No abstract text available
Text: Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA 25742 , Web: www.alphawire.com Customer Specification PART NO. 2826/2 Construction Diameters (In) 1) Component 1 2 X 1 COND a) Conductor 16 (19/29) AWG SPC 0.056 b) Insulation 0.012" Wall, Nom. PTFE
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MIL-W-16878/4
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Untitled
Abstract: No abstract text available
Text: Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA 25742 , Web: www.alphawire.com Customer Specification PART NO. 2826/3 Construction Diameters (In) 1) Component 1 3 X 1 COND a) Conductor 16 (19/29) AWG SPC 0.056 b) Insulation 0.012" Wall, Nom. PTFE
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MIL-W-16878/4
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Untitled
Abstract: No abstract text available
Text: Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA 25742 , Web: www.alphawire.com Customer Specification PART NO. 2826 Construction Diameters (In) 1) Component 1 1 X 1 COND a) Conductor 16 (19/29) AWG SPC 0.056 b) Insulation 0.012" Wall, Nom. PTFE
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MIL-W-16878/4
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STK11C68-SF45I
Abstract: STK11C68-SF45 stk11c68sf45
Text: STK11C68 Features Functional Description • 25 ns, 35 ns, and 45 ns access times ■ Pin compatible with industry standard SRAMs ■ Software initiated nonvolatile STORE ■ Unlimited Read and Write endurance ■ Automatic RECALL to SRAM on power up ■ Unlimited RECALL cycles
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STK11C68
64-Kbit
STK11C68
STK11C68-SF45I
STK11C68-SF45
stk11c68sf45
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16C88
Abstract: No abstract text available
Text: 256-Kbit 32 K x 8 PowerStore nvSRAM 256-Kbit (32 K × 8) PowerStore nvSRAM Features Functional Description • 25 ns and 45 ns Access Times ■ Pin compatible with Industry Standard SRAMs ■ Automatic Nonvolatile STORE on power loss ■ Nonvolatile STORE under Software Control
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STK15C88
256-Kbit
STK15C88
256Kb
16C88
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Untitled
Abstract: No abstract text available
Text: STK11C88 Features Functional Description • 25 ns and 45 ns Access Times ■ Pin Compatible with Industry Standard SRAMs ■ Software initiated STORE and RECALL ■ Automatic RECALL to SRAM on Power Up ■ Unlimited Read and Write endurance ■ Unlimited RECALL Cycles
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STK11C88
STK11C88
Access0591
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STK16C88-WF45
Abstract: SRAM TTL
Text: STK16C88 256-Kbit 32 K x 8 AutoStore+ nvSRAM 256-Kbit (32 K × 8) AutoStore+ nvSRAM Functional Description • 25 ns and 45 ns access times ■ Directly replaces battery-backed SRAM modules such as Dallas/Maxim DS1230 AB ■ Automatic nonvolatile STORE on power loss
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STK16C88
256-Kbit
STK16C88
STK16C88-WF45
SRAM TTL
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Untitled
Abstract: No abstract text available
Text: STK11C88 256 Kbit 32K x 8 SoftStore nvSRAM Functional Description • 25 ns and 45 ns Access Times ■ Pin Compatible with Industry Standard SRAMs ■ Software initiated STORE and RECALL ■ Automatic RECALL to SRAM on Power Up ■ Unlimited Read and Write endurance
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STK11C88
STK11C88
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Untitled
Abstract: No abstract text available
Text: CY14V104LA CY14V104NA 4-Mbit 512 K x 8 / 256 K × 16 nvSRAM 4-Mbit (512 K × 8 / 256 K × 16) nvSRAM Features Functional Description • 25 ns and 45 ns access times ■ Internally organized as 512 K × 8 (CY14V104LA) or 256 K × 16 (CY14V104NA) ■ Hands off automatic STORE on power-down with only a small
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CY14V104LA
CY14V104NA
CY14V104LA)
CY14V104NA)
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taa 723
Abstract: DS1230W STK16C88-3
Text: STK16C88-3 256 Kbit 32K x 8 AutoStore+ nvSRAM Functional Description • Fast 35 ns Read Access and R/W Cycle Time ■ Directly replaces Battery-backed SRAM Modules such as Dallas/Maxim DS1230W ■ Automatic Nonvolatile STORE on Power Loss ■ Nonvolatile STORE under Software Control
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STK16C88-3
DS1230W
STK16C88-3
256Kb
taa 723
DS1230W
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taa 723
Abstract: DS1230W STK16C88-3
Text: STK16C88-3 256 Kbit 32K x 8 AutoStore+ nvSRAM Functional Description • Fast 35 ns Read Access and R/W Cycle Time ■ Directly replaces Battery-backed SRAM Modules such as Dallas/Maxim DS1230W ■ Automatic Nonvolatile STORE on Power Loss ■ Nonvolatile STORE under Software Control
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STK16C88-3
DS1230W
STK16C88-3
256Kb
taa 723
DS1230W
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STK12C68-SF45I-TR
Abstract: No abstract text available
Text: STK12C68 64 Kbit 8 K x 8 AutoStore nvSRAM Features Functional Description • 25 ns, 35 ns, and 45 ns access times ■ Hands off automatic STORE on power-down with external 68 µF capacitor ■ STORE to QuantumTrap nonvolatile elements is initiated by software, hardware, or AutoStore on power-down
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STK12C68
STK12C68
STK12C68-SF45I-TR
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Untitled
Abstract: No abstract text available
Text: STK12C68 Features Functional Description • 25 ns, 35 ns, and 45 ns access times ■ Hands off automatic STORE on power-down with external 68 µF capacitor ■ STORE to QuantumTrap nonvolatile elements is initiated by software, hardware, or AutoStore on power-down
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STK12C68
STK12C68
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Untitled
Abstract: No abstract text available
Text: 256-Kbit 32 K x 8 PowerStore nvSRAM 256-Kbit (32 K × 8) PowerStore nvSRAM Features Functional Description • 25 ns and 45 ns Access Times ■ Pin compatible with Industry Standard SRAMs ■ Automatic Nonvolatile STORE on power loss ■ Nonvolatile STORE under Software Control
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256-Kbit
STK15C88
256Kb
STK15C88
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taa 723
Abstract: STK11C68
Text: STK11C68 64 Kbit 8K x 8 SoftStore nvSRAM Functional Description • 25 ns, 35 ns, and 45 ns access times ■ Pin compatible with industry standard SRAMs ■ Software initiated nonvolatile STORE ■ Unlimited Read and Write endurance ■ Automatic RECALL to SRAM on power up
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STK11C68
STK11C68
taa 723
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Untitled
Abstract: No abstract text available
Text: CY14B104LA, CY14B104NA 4-Mbit 512 K x 8/256 K × 16 nvSRAM 4-Mbit (512 K × 8/256 K × 16) nvSRAM Features • Packages ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-ball fine-pitch ball grid array (FBGA) Pb-free and restriction of hazardous substances (RoHS)
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CY14B104LA,
CY14B104NA
CY14B104LA)
CY14B104NA)
44-/54-pin
48-ball
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jrm a55
Abstract: tip 0ff 0401 ANALOG irf 5630 ko 224 4K tantalum capacitors jrm a45 irf 7408 bt 4840 pinout diagram A9F7 29 INCH crt tv FBT pinout chassis 3111 253 3266 2e jrm A45
Text: PR E FA C E T he IBM P erson al C o m p u te r T ech n ical R eferen ce M anual is designed to pro v id e h ard w are design an d in terfa ce in fo rm atio n . T h is p u b licatio n also provides B asic In p u t O u tp u t S y stem B IO S in fo rm atio n as w ell as p ro g ram m ing su p p o rt m a tter.
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64/256K
RS232C-A
jrm a55
tip 0ff 0401 ANALOG
irf 5630
ko 224 4K tantalum capacitors jrm a45
irf 7408
bt 4840 pinout diagram
A9F7
29 INCH crt tv FBT pinout
chassis 3111 253 3266 2e
jrm A45
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Untitled
Abstract: No abstract text available
Text: GENNUM G F9 1 0 1 High Perform ance Multirate Digital Filter C O R P O R A T I O N PRELIMINARY DATA SHEET FEATURES DESCRIPTION • 40 MHz computation, max. I/P & O/P data rate The GF9101 is a hig h p e rfo rm a n ce m u ltira te d ig ita l filter • 12 tap cells
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GF9101
12-tap
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8086 interrupt vector table
Abstract: microprocessor 8086 Program relocation 8086 manual 8086 timing diagram 8282/8283 latch used for 8086 8086 microprocessor architecture diagram 8086 physical memory organization 8286/8287 amd 8086 manual of microprocessors 8086
Text: 8086 16-Bit M ic ro p ro ce sso r ¡A P X 8 6 Fam ily F IN A L DISTINCTIVE CHARACTERISTICS • • • • • • M U LTIBU S system interface Three speed options - 5 M H z for 8086 - 8 M H z for 8086-2 - 10M H z for 8086-1 Directly addresses up to 1 Mbyte of memory
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16-Bit
APX86
10MHz
8086 interrupt vector table
microprocessor 8086 Program relocation
8086 manual
8086 timing diagram
8282/8283 latch used for 8086
8086 microprocessor architecture diagram
8086 physical memory organization
8286/8287
amd 8086
manual of microprocessors 8086
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32KX8
Abstract: No abstract text available
Text: P'S dt) Integrated Devi ce Technology» Inc. SUBSYSTEMS “FLEXI-PAK ” FAMILY 32K x 1 6/32K x 1 6 CMOS SRAM/EEPROM MODULE PRELIMINARY IDT7M7005 FEATURES: DESCRIPTION: • High-density CMOS module with SRAM and EEPROM memory on-board • M em ber of the S u b syste m s "F le xi-P a k” Fam ily of
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16/32K
IDT7M7005
66-pin
32KX8
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Untitled
Abstract: No abstract text available
Text: I GENNUM C O R P O R A T I 3^3S 7fl3 □□□MQbM 334 • M u ltm m r GF9101 High Performance Multirate Digital Filter O N DATA SHEET FEATURES DESCRIPTION • highly optimized & flexible architecture for multirate FIR filtering applications The GF9101 is a hig h p e rfo rm a n ce m u ltirate d ig ita l filte r
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GF9101
12-tap
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ce 2826 ic
Abstract: No abstract text available
Text: O rdering num ber: EN 2826 Jo.2826 HPA100R NPN Triple Diffused Planar Silicon Composite Transistor Ultrahigh-Defmition CRT Display Horizontal Deflection Output Applications F e a tu re s • Highspeed tf typ = 100ns • High breakdown voltage (Vcbo = 1500V)
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HPA100R
100ns)
cH707k>
GD2G44G
ce 2826 ic
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ce 2826 ic
Abstract: ce 2826 A100R HPA100R
Text: Ordering number : EN 2826 HP A 100R Very High-Definition Color Display, Horizontal Deflection Output Applications NPN Triple Diffused Planar Silicon Composite Transistor Features • Highspeed tf typ= 100ns • High breakdown voltage (V^ bo —1500V) • High-speed damper diode placed in one package (tfr —0.2ps max)
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A100R
100ns)
ce 2826 ic
ce 2826
A100R
HPA100R
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