SV372
Abstract: No abstract text available
Text: VCO 1.APPLICATION W-CDMA specification preliminary 1/2 IF 2.PART No. CD0008 3.DIMENSIONS NC G OUT SV372 CD0008 ● SE 371 G VB max3.5 VC SIDE VIEW 10.0 OUT : RF OUTPUT VB : POWER SUPPLY VC : CONTROL VOLT. G : GROUND NC : GROUND NOTE : There is no mark of
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SV372CD0008
SV372
CD0008
SV372
SV372CD0008
25Deg
50ohm
2SC3624A
100pF
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27LS00
Abstract: 27LS01 27LS00 RAM Am27LS
Text: Am27LS00/01 Series 256-Bit Low-Power Schottky Bipolar RAM > 3 DISTINCTIVE CHARACTERISTICS • • High Internal ECL circuitry for optimum speed/power perfor mance over voltage and temperature • Output preconditioned during write to eliminate the write
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Am27LS00/01
256-Bit
256-words
Am27LS00
MIL-STD-883,
27LS00
27LS01
27LS00 RAM
Am27LS
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SSSB
Abstract: No abstract text available
Text: HO» Pago 0001 01/16/89 11:19:17 Tx: AM27S07 - Ft: AMO FMT Am27S07 E 64-Bit Noninverting-Output Bipolar RAM DISTINCTIVE CHARACTERISTICS • • Fully decoded 16-word x 4-bit tow power Schottky RAMs Internal ECL circuitry for optimum speed/power perfor mance over voltage and temperature
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AM27S07
64-Bit
16-word
ffiflRfflQ66666df-------
WF001210
SSSB
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Untitled
Abstract: No abstract text available
Text: ADV MICRO {MEMORY} fli 0257528 ADV MICRO MEMORY D E § 0557520 0055515 1 89D f-4 6 -2 3 -0 8 üf 25595 Am27S07 64-Bit Noninverting-Output Bipolar RAM > 3 PO DISTINCTIVE CHARACTERISTICS • • • Fully decoded 16-word x 4-bit low power Schottky RAMs Internal ECL circuitry for optimum speed/power perfor
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Am27S07
64-Bit
16-word
WF00121Ã
07318B
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74S189
Abstract: 74S289 AM27S02 AM27S02PC CD000831 27S03
Text: A m 2 7 S 0 2 /2 7 S 0 3 64-Bit Inverting-Output Bipolar RAM • • Fully decoded 16 word x 4-bit low-power Schottky RAMS Ultra-Fast "A " Version: Address access time 25ns Internal ECL circuitry for optimum speed/power perfor mance over voltage and temperature
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Am27S02/27S03
64-Bit
Am27S02/02A
Am27S03/03A
74S289,
Am27S02A/02
74S189,
Am27S03A/03
74S189
74S289
AM27S02
AM27S02PC
CD000831
27S03
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am27s07
Abstract: No abstract text available
Text: Am27LS06/27LS07 64-Bit Low-Power Noninvsrting-Output Bipolar RAM DISTINCTIVE CHARACTERISTICS • • • • Fully decoded 16-word x 4-bit low power Schottky RAMs Internal ECL circuitry for optimum speed/power perfor mance over voltage and temperature Output preconditioned during write to eliminate the write
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Am27LS06/27LS07
64-Bit
16-word
Am27LS07
Am27LS06
WF001110
Am27S07A/07
am27s07
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DGM181-191
Abstract: DG181
Text: DGM181-191 DGM181-191 High-Speed CMOS Analog Switch GENERAL DESCRIPTION FEATURES The DGM181 family of CMOS monolithic switches utilizes intersii’s latch-free junction isolated processing to combine the speed of the hybrid DG181 family with the reliability and
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DGM181-191
DGM181
DG181
10/jA
200pA
STAND-191
DGM181/182
DGM181/182
DGM181-191
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AM27S03
Abstract: A35CS AM27S02 20D3 74S189 74S289 fmuml
Text: Page 0001 11/23/88 15:06:24 Tx: AM27S02 TED • Ft: AMD FMT twforiwtfcm S< rv ie> fc Inc. Am 27S02/Am 27S03 64-Sit Inverting-Output Bipolar RAM > a DISTINCTIVE CH A R A C T E R IST IC S Fully 16 word x 4-bit low-power Schottky RAM S Ultra-Fast Version; Address access time 25 ns
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AM27S02
Am27S02/Am27S03
64-Bit
Am27S03
74S289,
74S189,
A35CS
20D3
74S189
74S289
fmuml
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AM27S03
Abstract: No abstract text available
Text: ADV MICRO {MEMORY} 0257528 0ES7S5ä D05SSti3 Q T|~ ADV M ICRO MEMORY 89D 25563 D ^ T -4 6 -2 3 -0 8 Am27S02/Am27S03 P 64-Bit Inverting-Output Bipolar RAM DISTINCTIVE CHARACTERISTICS • • • Fully decoded 16 word x 4-bit low-power Schottky RAMS Ultra-Fast Version: Address access time 15 ns
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D05SSti3
Am27S02/Am27S03
64-Bit
Am27S02
Am27S03
74S289,
74S189,
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27ls06
Abstract: No abstract text available
Text: Am27LS06/27LS07 64-Bit Low-Power Noninverting-Output Bipolar RAM DISTINCTIVE CHARACTERISTICS • • • Fully decoded 16-word x 4-bit low power Schottky RAMs Internal ECL circuitry for optimum speed/power perfor mance over voltage and temperature Output preconditioned during write to eliminate the write
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Am27LS06/27LS07
64-Bit
16-word
Am27LS07
Am27LS06
MIL-STD-883,
27ls06
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Untitled
Abstract: No abstract text available
Text: Am3101/3101-1 64-Bit Write Transparent, Inverting Output, Bipolar RAM DISTINCTIVE CHARACTERISTICS • • • Standard version; Address access time 50 ns Low power: Ice typically 75 mA Internal ECL circuitry for optimum speed/power perfor mance over voltage and temperature
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Am3101/3101-1
64-Bit
16-word
MIL-STD-883,
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AM27S06A
Abstract: 27S07A 27s07 Am27S06/27S07
Text: Am27S06/27S07 64-Bit Noninverting-Output Bipolar RAM • Available with three-state outputs Am27S07/07A or with open collector outputs (Am27S06/06A) Electrically tested and optically inspected die for the assemblers of hybrid products • GENERAL DESCRIPTION
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Am27S06/27S07
64-Bit
16-word
Am27S07/07A
Am27S06/06A
MIL-STD-883,
AM27S06A
27S07A
27s07
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27lS03
Abstract: 74ls189 ram 74LS189 74LS289
Text: A m 27LS 02/27L S 03 64-Bit Low-Power Inverting-Output Bipolar RAM • • Fully decoded 16 word x 4-bit low-power Schottky RAMs Low Power Internal ECL circuitry for optimum speed/power perfor mance over voltage and temperature • • • Output preconditioned during write to eliminate write
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PDF
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Am27LS02/27LS03
64-Bit
Am27LS02
Am27LS03
74LS289,
74LS189,
27lS03
74ls189 ram
74LS189
74LS289
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74S189
Abstract: 74S289 AM27S02
Text: Page 0001 11/23/88 15:06:24 Tx: AM27S02 TED • Ft: AMD FMT twforiwtfcm S< rv ie> fc Inc. Am 27S02/Am 27S03 64-Sit Inverting-Output Bipolar RAM > a DISTINCTIVE CHARACTERISTICS Fully 16 w ord x 4-b it low -pow er S chottky RAMS Ultra-Fast Version; Address access time 25 ns
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AM27S02
Am27S02/Am27S03
64-Bit
Am27S03
74S289,
74S189,
74S189
74S289
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Encad
Abstract: No abstract text available
Text: flQM % 's. ' Pago 0001 0 1 /1 6 /8 9 11:19:17 Tx: A M 27S 07 - Ft: AM O F M T Am27S07 64-Bit Noninverting-Output Bipolar RAM > 3 M DISTINCTIVE CHARACTERISTICS • • F ully decoded 16-w ord x 4-bit tow pow er S chottky RAMS Internal ECL circuitry fo r optimum speed/pow er perfor
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AM27S07
64-Bit
16-wordx
WF001111
WF001210
Encad
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Am27ls00
Abstract: AM27LS01 27LS01 Am27LS01-1
Text: Am 27LS00/01 Series 256-Bit Low-Power Schottky Bipolar RAM Output preconditioned during write to eliminate the write recovery glitch Available with three-state outputs or with open-collector outputs High speed Internal ECL circuitry for optimum speed/power perfor
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Am27LS00/01
256-Bit
256-words
Am27LS00
Am27LS01
MIL-STD-883,
27LS01
Am27LS01-1
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16-TX
Abstract: AM27S07
Text: flQM % 's. ' Pago 0001 0 1 /1 6 /8 9 11:19:17 Tx: A M 27S 07 - Ft: AM O F M T Am 27S07 64-Bit Noninverting-Output Bipolar RAM > 3 M DISTINCTIVE CHARACTERISTICS • • Fully decoded 16-word x 4-bit tow power Schottky RAMS Internal ECL circuitry for optimum speed/power perfor
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OCR Scan
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PDF
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AM27S07
64-Bit
16-wordx
WF001111
WF001210
16-TX
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27S03
Abstract: No abstract text available
Text: Am27S02/27S03 64-Bit Inverting-Output Bipolar RAM • • • Fully decoded 16 word x 4-bit low-power Schottky RAMS Ultra-Fast " A " Version: Address access time 25ns Internal E C l circuitry for optimum speed/power perfor mance over voltage and temperature
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Am27S02/27S03
64-Bit
Am27S02/02A
Am27S03/03A
74S289,
Am27S02A/02
74S189,
Am27S03A/03
27S03
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Untitled
Abstract: No abstract text available
Text: ]>i| 02S7S2Ö OOSSSÖS T ADV MICRO -CMEMORY} 0257528 ADV M I C R O MEMORY 89D 25 585 T dfi q S" Am27LS07 flft T462308 64-Bit Low-Power Noninverting-Output Bipolar RAM Ï DISTINCTIVE CHARACTERISTICS • • Fully decoded 16-word x 4-bit low-power Schottky
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02S7S2Ã
Am27LS07
64-Bit
16-word
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27S06
Abstract: 27S07A M 3101
Text: Am27S06/27S07 64-Bit Noninverting-Output Bipolar RAM DISTINCTIVE CHARACTERISTICS • • • Fully decoded 16-word x 4-bit low power Schottky RAM s Internal E C L circuitry for optimum speed/power perfor mance over voltage and temperature Output preconditioned during write to eliminate the write
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OCR Scan
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PDF
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Am27S06/27S07
64-Bit
16-word
Am27S07/07A
Am27S06/06A
MIL-STD-883,
27S06
27S07A
M 3101
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AM27S06A
Abstract: No abstract text available
Text: Am27S06/27S07 64-Bit Noninverting-Output Bipolar RAM DISTINCTIVE CHARACTERISTICS • • • Fully decoded 16-word x 4-bit low power Schottky RAMs Internal ECL circuitry for optimum speed/power perfor mance over voltage and temperature Output preconditioned during write to eliminate the write
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OCR Scan
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PDF
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Am27S06/27S07
64-Bit
16-word
Am27S07/07A
Am27S06/06A
MIL-STD-883,
AM27S06A
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27S181A
Abstract: 27S180 27S181 lta9 L81A pcb diagram of mini ups system RPS18 27ps181 AM27S 7S180
Text: Am27S180/27S181/PS181 Am27S280/27S281/PS281 Am27S180/27S181/PS181 Am27S280/27S281/PS281 8,192-Bit 1 024x8 Bipolar PROM DISTINCTIVE CHARACTERISTICS Fast access time allows high system speed 50% power savings on deselected parts — enhances reliability through total system heat reduction
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Am27S180/27S181/PS181
Am27S280/27S281/PS281
192-Bit
024x8)
Am27S180/27S181
Am27S180
Am27S181
MIL-STD-883,
27S181A
27S180
27S181
lta9
L81A
pcb diagram of mini ups system
RPS18
27ps181
AM27S
7S180
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interfacing of 8257 devices with 8085
Abstract: IC 7430 IC-7430 BPK-72 Bubble Memory 8085 microprocessor BPK72 7430E IC7406 8085 Manual 6116 interface 8085
Text: in tJ APPLICATION NOTE AP-150 O ctober 1983 IN T E L C O RPO RATIO N, 1982 6-86 O C TO B E R 1983 O R D ER N U M B ER : 210849-002 AP-150 8085 TO BPK 72 INTERFACE INTRODUCTION Bubble Memory is quickly emerging as the preferred high density storage medium for a variety of microprocessor
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AP-150
IMB-72
interfacing of 8257 devices with 8085
IC 7430
IC-7430
BPK-72 Bubble Memory
8085 microprocessor
BPK72
7430E
IC7406
8085 Manual
6116 interface 8085
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Untitled
Abstract: No abstract text available
Text: ADV MI CR O -CMEMORY} ai dËJ D5S7S5Ö 0035574 0 2 5 7 5 2 8 ADV MICRO MEMORY 4 :89D 2 5 5 7 4 D ^ T^ 4 6-23-08 Am 3101 64-Bit Write Transparent, Inverting Output, Bipolar RAM > i DISTINCTIVE CHARACTERISTICS • • • CP High speed Fully decoded 16-word x 4-bit Schottky RAMs
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64-Bit
16-word
7320A
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