Untitled
Abstract: No abstract text available
Text: s e M IKRO n Absolute Maximum Ratings Conditions ' Values VcES VcGR lc = 20 k£2 Tcase = 25/80 °C ICM Tcase = 25/80 °C; tp 1200 1200 1 0 0 /9 0 2 0 0 /1 8 0 ±20 690 150 125 2 500 Symbol Units Rge = 1 ms V ges AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode
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100GB06
Abstract: No abstract text available
Text: s e M IK R O N zurück Absolute Maximum Ratings Values Symbol Conditions 1 VcES VcGR lc IcM V ges T oase = 25/70 °C Ptot per IG B T , T oase = 25 °C Units 600 600 1 3 0 /1 0 0 260 / 200 ±20 450 - 4 0 . +150 125) 2500 Class F 40/125/56 Rge = 20 Tease = 25/70 °C; tp = 1 ms
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Untitled
Abstract: No abstract text available
Text: se MIKRDn Absolute Maximum Ratings V a lu e s Units Symbol C onditions 1 VcES VcGR lc IcM Vges Rge = 20 k ii Tease = 25/80 °C Tease = 25/80 °C¡ tp = 1 ms 1700 1700 7 5 /5 0 144/100 ±20 per IGBT, Tease = 25 °C AC, 1 min. DIN 4 0 040 DIN IEC 68T .1 500
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fll3bb71
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Untitled
Abstract: No abstract text available
Text: s e M IK R O n zurück Absolute Maximum Ratings Values Symbol Conditions 1 VcES VcGR lc IcM V ges Units 600 600 2 3 0 /1 9 5 460 / 390 ±20 700 -4 0 . +150 125) 2 500 Class F 40/125/56 Rge = 20 k£^ Toase = 25/60 "C Tease = 25/60 °C; tp = 1 ms Ptot Tj, (Tstg)
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SKM 75 Gb 124 IGBT
Abstract: the calculation of the power dissipation for the igbt and the inverse diode in circuits VQE 23 F Semitrans M SKM IGBT FF 450
Text: se MIKROn zurück Absolute Maximum Ratings Values Symbol Conditions 1 VcES VcGR lc IcM V ges R ge = 20 k £ l T oase = 25/75 °C T oase = 25/75 °C; tp = 1 ms Ptot Tj, Tstg) per IG B T , T oaSe = 25 °C Visol AC, 1 min. DIN 40040 DIN IEC 68T.1 humidity climate
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Untitled
Abstract: No abstract text available
Text: se MIKROn Absolute Maximum Ratings Symbol Conditions ' VcES VcGR lc R ge = 20 k£2 Tca se = 25/80 °C Tca se = 25/80 °C; tp ICM = 1 ms V ges p e r I G B T , Tcase P to t = 25 °C T j, T s tg V sol humidity climate AC, 1 min. DIN 40 040 DIN IEC 68 Values
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semikron skm 75gb
Abstract: No abstract text available
Text: se MIKRON zurück Absolute Maximum Ratings Values Symbol Conditions 1 VcES VcGR Units 600 600 100 / 75 2 0 0 /1 5 0 ±20 350 -4 0 . + 125) 150 2500 Rge = 20 Toase = 25/75 °C Tease = 25/75 °C; tp = 1 ms lc IcM V ges per IGBT, T oase = 25 °C Ptot Tj, (Tstg)
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VQE 12
Abstract: No abstract text available
Text: s e M IKR D n Absolute Maximum Ratings S ym bol s e m itr a n s m V a lu e s C ond itions ' U nits AC, 1 min. DIN 40 040 DIN IEC 68 T.1 1700 1700 7 5 /5 0 14 4/10 0 ±20 500 - 4 0 . . ,+150 125 4000 Class F 55/150/56 Inverse Diode 81 Tease = 25/80 C If= - lc
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SKM75GB173D
VQE 12
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Untitled
Abstract: No abstract text available
Text: s e m ik r o n Absolute Maximum Ratings Symbol C onditions VcES VcGR R ge = 2 0 k£2 lc ICM Tease = 2 5 /8 0 'C Tease = 2 5 /8 0 C j tp — 1 m s Values Units ’ 120 0 clim ate If s m l2t A V ±20 700 p er IG B T , Tease = 2 5 “C - 4 0 . . ,+ 1 5 0 125
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Untitled
Abstract: No abstract text available
Text: s e MIKROn Absolute Maximum Ratings Values Symbol Conditions 1 Units VcES VcGR lc IcM V ges = 20 Toase = 25/85 °C Tease = 25/85 °C; tp = 1 ms P to t per R 1200 1200 1 5 0 /1 0 0 300 / 200 ± 20 700 -4 0 . + 150 125) 2 500 Class F 40/125/56 g e I G B T , T o as e
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SKM50GB
Abstract: skm 22 gal 123
Text: se MIKRON Absolute Maximum Ratings Sym bol VcES VcGR lc ICM Vges Ptol Rge = 20 ki2 Tease ~ 25/80 °C Teas = 25/80 °C; tp = 1 ms per IGBT, Tease = 25 °C T „ Tstg Visol humidity climate AC, 1 min. DIN 40 040 DIN IEC 68 T.1 D io d e s If= - lc IfM= - ICM
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SKM50
CASED61
SKM50GB
skm 22 gal 123
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semikron SKm GAL 123D
Abstract: CASED61
Text: s e M IK R O n Absolute Maximum Ratings Symbol Conditions VcES VcGR lc Rge IC M Values Units ' 20 k £ 2 Tcase = 25/80 °C Tcase = 25/80 °C; tp = = 1 ms V ges AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode Tcase = If= - lc IfM= - IcM Tcase = tp = 10 Ifsm
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Untitled
Abstract: No abstract text available
Text: s e M IKRO n Absolute Maximum Ratings Sym bol VcES VcGR lc ICM V ges Units Rge = 20 k£2 Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode Tcase = If= - lc Tcase = IfM= - IcM tp = 10
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Untitled
Abstract: No abstract text available
Text: s e M IK R O n Absolute Maximum Ratings Values Symbol Conditions ' . 123 D Units VcES VcGR lc ICM V ges R ge = 20 k£2 Tease = 25/80 °C Tease = 25/80 °C; tp = 1 ms 1200 1200 5 0 /4 0 1 0 0 /8 0 ±20 310 - 4 0 . . .+150 125 2 500 V V p e r IG BT, Tease = 25 °C
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B647
Abstract: tig ac inverter circuit tig ac inverter circuit 180 skm100gb 100
Text: SEMIKRON Absolute Maximum Ratings Symbol Values Conditions ' Units AC, 1 min. DIN 40 040 DIN IEC68T.1 1700 1700 110/75 220/150 ±20 625 - 4 0 . . .+150 125 4000 Class F 55/150/56 inverse Diode 81 Tcase= 25/80 »C Teas = 25/80 “C; tp —1 ms I fm = - Icm
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IEC68T
B647
tig ac inverter circuit
tig ac inverter circuit 180
skm100gb 100
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75AFC
Abstract: L56A b644 us25x
Text: s e m ik r d n A b s o l u t e M a x im u m R a t in g s Sym bol C onditions ' V ets VcGR lc IcM R ge = 20 k ii Tcase= 25/80 °C Tcase= 25/80 °C; tp — 1 ms V ges Ptot per Tj, Tag Visoi humidity climate IGBT, Tcase= 25 °C AC, 1min. D1N 40 040 DINIEC68T.1
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DINIEC68T
se--25/80
B6-46
75AFC
L56A
b644
us25x
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