capacitor 226 35K
Abstract: 105 35K capacitor 226 35K capacitor capacitor 104 Z30 electrolytic capacitor 226 35k capacitor 104 35k
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.
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MRF21120
MRF21120S
capacitor 226 35K
105 35K capacitor
226 35K capacitor
capacitor 104 Z30
electrolytic capacitor 226 35k
capacitor 104 35k
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capacitor 226 35K
Abstract: 226 35K capacitor
Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to
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MRF21120/D
MRF21120
MRF21120S
capacitor 226 35K
226 35K capacitor
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capacitor 106 35K
Abstract: capacitor 226 35K 022 electrolytic 226 35K capacitor 226 35K capacitor 106 35K tantalum 105 35K capacitor capacitor 106 35K electrolytic 226 35K capacitor 106 35K 045 226 35K capacitor datasheet
Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to
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MRF21120/D
MRF21120
MRF21120S
MRF21120
capacitor 106 35K
capacitor 226 35K 022 electrolytic
226 35K
capacitor 226 35K
capacitor 106 35K tantalum
105 35K capacitor
capacitor 106 35K electrolytic
226 35K capacitor
106 35K 045
226 35K capacitor datasheet
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226 35K capacitor
Abstract: 226 35K R 226 35k 029 capacitor 226 35K capacitor 105 35K 102 capacitor 104 35k R 226 35k 029 R variable capacitor 105 35K capacitor fm variable capacitor
Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to
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MRF21120/D
MRF21120
MRF21120S
MRF21120
226 35K capacitor
226 35K
R 226 35k 029
capacitor 226 35K
capacitor 105 35K 102
capacitor 104 35k
R 226 35k 029 R
variable capacitor
105 35K capacitor
fm variable capacitor
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226 35K
Abstract: 226 35K capacitor capacitor 226 35K electrolytic capacitor 226 35k 226 35K 649 226 35K 750 gps-500 105 35K capacitor R 226 35k
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF21120 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21120
226 35K
226 35K capacitor
capacitor 226 35K
electrolytic capacitor 226 35k
226 35K 649
226 35K 750
gps-500
105 35K capacitor
R 226 35k
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226 35K capacitor
Abstract: capacitor 226 35K C40 Sprague 105 35K capacitor R 226 35k
Text: Freescale Semiconductor Technical Data Rev. 10, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21120R6
226 35K capacitor
capacitor 226 35K
C40 Sprague
105 35K capacitor
R 226 35k
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226 35K capacitor
Abstract: capacitor 226 35K R 226 35k
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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2170fficiency,
MRF21120
MRF21120S
226 35K capacitor
capacitor 226 35K
R 226 35k
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capacitor 226 35K
Abstract: R 226 35k 226 35K capacitor
Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF21120 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110
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MRF21120/D
MRF21120
MRF21120/D
capacitor 226 35K
R 226 35k
226 35K capacitor
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z40 mosfet
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF21120R6 N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110
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MRF21120/D
MRF21120R6
MRF21120/D
z40 mosfet
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226 35K capacitor
Abstract: MRF21120 z40 mosfet 226 35K capacitor 226 35K
Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF21120 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110
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MRF21120/D
MRF21120
226 35K capacitor
MRF21120
z40 mosfet
226 35K
capacitor 226 35K
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capacitor 106 35K
Abstract: 226 35K 106 35K capacitor 106 35K tantalum capacitor 106 35K electrolytic 105 35K capacitor MRF21120R6 capacitor 226 35K
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF21120R6 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET
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MRF21120/D
MRF21120R6
capacitor 106 35K
226 35K
106 35K
capacitor 106 35K tantalum
capacitor 106 35K electrolytic
105 35K capacitor
MRF21120R6
capacitor 226 35K
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226 35k 051
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110
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MRF21120/D
MRF21120
MRF21120S
MRF21120/D
226 35k 051
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226 35K
Abstract: capacitor 226 35K capacitor 226 35K 022 electrolytic 105 35K capacitor 226 35K capacitor datasheet gps m 89 pin configuration 105 35K capacitor datasheet 226 35K capacitor marking us capacitor pf l1 MRF21120
Text: Freescale Semiconductor Technical Data Document Number: MRF21120 Rev. 11, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21120
MRF21120R6
226 35K
capacitor 226 35K
capacitor 226 35K 022 electrolytic
105 35K capacitor
226 35K capacitor datasheet
gps m 89 pin configuration
105 35K capacitor datasheet
226 35K capacitor
marking us capacitor pf l1
MRF21120
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c38 transistor
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRF21120 Rev. 10, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21120
MRF21120R6
c38 transistor
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226 35K capacitor
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRF21120 Rev. 10, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21120
MRF21120R6
226 35K capacitor
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110
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MRF21120/D
MRF21120
MRF21120S
MRF21120
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226 35K
Abstract: 105 35K capacitor capacitor 226 35K 022 electrolytic MRF21120 MRF21120R6
Text: Freescale Semiconductor Technical Data Document Number: MRF21120 Rev. 11, 5/2006 RF Power Field Effect Transistor MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21120
MRF21120R6
226 35K
105 35K capacitor
capacitor 226 35K 022 electrolytic
MRF21120
MRF21120R6
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panasonic inverter dv 707 manual
Abstract: 018T A423 Mosfet FTR 03-E Arcotronics 1.27.6 nsl 7053 mkp DX 3500 manual Honeywell DBM 01A Polyester capacitors 823k 250V SPRAGUE powerlytic 36Dx sprague 68D
Text: PASSIVE COMPONENTS Resistors Networks and Arrays Bourns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590, 591, 592 Caddock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 593 CTS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 594
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DT5-BF18DN
Abstract: partsnic DT5-BF70D TUNER DT5-BF18DN TLM1C106ASSR CDY-F2918H dt5-bf18 dt5-bf18d electrolytic capacitor 336 35K dehumidifier
Text: A LUMINUM E LECTROLYTIC C APACITORS • QUICK GUIDE ■ SCHEME ■ GUIDELINES FOR USING ■ LEAD TAPING SPECIFICATIONS ■ PACKAGING & REFLOW SOLDERING SPECIFICATIONS OF CHIP CAPACITORS ■ PRODUCTS • SURFACE MOUNT TYPE • RADIAL LEAD TYPE • SNAP-IN TYPE
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CDR03 receiver
Abstract: varistor 250v 592 PH 105k 250v ceramic disc Piezoelectric crystal 1mhz ultrasonic FUSE T2A 250v Motorola transistor smd marking codes smps 10w 5V 230 AC to 5V dc smps capacitor type 104z 50v SR 0805 X7R capacitor
Text: MLC Capacitors Tantalum Capacitors Microwave Capacitors Thin Film Capacitors Glass Capacitors Chip Resistors Networks EMI Filters Bulk Filters Saw Filters Dielectric Filters Resonators Oscillators Thin Film Inductors Thin Film Fuses Voltage Suppressors Acoustical Piezos
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S-SF30M298-C
CDR03 receiver
varistor 250v 592 PH
105k 250v ceramic
disc Piezoelectric crystal 1mhz ultrasonic
FUSE T2A 250v
Motorola transistor smd marking codes
smps 10w 5V
230 AC to 5V dc smps
capacitor type 104z 50v
SR 0805 X7R capacitor
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16X4
Abstract: PR72A
Text: LatticeECP2 Family Data Sheet Version 01.0, February 2006 LatticeECP2 Family Data Sheet Introduction February 2006 Advance Data Sheet Features • Source synchronous standards support – SPI4.2, SFI4, XGMII – High Speed ADC/DAC devices • Dedicated DDR and DDR2 memory support
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200MHz)
18x18
36x36
55Kbits
1032Kbi4)
TN1105)
TN1106)
TN1107)
16X4
PR72A
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82305
Abstract: CMOS 4066 B3560 BAR63 BBY39 PIC16C56 HP MASTER SELECTION GUIDE RF 89552 dsp lsb modulation demodulation HP 4066 15k
Text: Gran-Jansen AS GJRF USER GUIDE 2nd issue User tips Applications Preliminary test reports GRAN-JANSEN AS Slemdalsveien 70 * PO Box 187 Vinderen * 0319 Oslo * Norway Tel: +47 22 49 48 01 * Fax :+47 22 49 59 03 [email protected] * http//www.sn.no/granjansen GJRF USER GUIDE
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TBA 931
Abstract: No abstract text available
Text: LatticeECP2 Family Data Sheet DS1006 Version 01.1, August 2006 LatticeECP2 Family Data Sheet Introduction August 2006 Advance Data Sheet DS1006 Features • Dedicated gearing logic • Source synchronous standards support – SPI4.2, SFI4, XGMII – High Speed ADC/DAC devices
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DS1006
DS1006
18x18
36x36
200MHz)
33/25/1attice
ECP2-12.
TBA 931
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LA 7687 a
Abstract: No abstract text available
Text: GEC PLESSEY [ s e m i c o n d u c t o r s ! SP8861 1.3 GHz LOW POWER SINGLE-CHIP FREQUENCY SYNTHESISER Supersedes September 1990 Edition The SP8861 is a low power single chip synthesiser intended for professional radio applications, and contains all the elements (apart from the loop amplifier) to fabricate a
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SP8861
SP8861
0153nF
41627Q
0153iiF
1318nF
318X1Q
LA 7687 a
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