CDR43-1R4
Abstract: CDRH6D38-3R3 C3216X7R1E105K ECJ2FB0J106M GRP155R71E103K GRP155R71E682K GRP155R71H102K GRP155R71H332K LMK325BJ106MN MAX1565
Text: 19-2810; Rev 0; 4/03 MAX1565 Evaluation Kit Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Component List DESIGNATION QTY C1 C2 C3 C4, C5 C6A, C6B C7, C8 C9, C10, C17, C18, C19 C11 C12 DESCRIPTION ♦ ♦ ♦ ♦ 95% Efficiency 1.5V to 3.6V Input Voltage Range Main Step-Up Output: 3.35V or Adjustable
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MAX1565
MAX1801
6800pF,
GRP155R71E682K
CDR43-1R4
CDRH6D38-3R3
C3216X7R1E105K
ECJ2FB0J106M
GRP155R71E103K
GRP155R71H102K
GRP155R71H332K
LMK325BJ106MN
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marking 6CS
Abstract: MARKING CODE VF CMUD6263AE CMUD6263CE CMUD6263E CMUD6263SE mv marking code marking code IF marking r2 diode C63 SCHOTTKY DIODES 2
Text: CMUD6263E CMUD6263AE CMUD6263CE CMUD6263SE ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES SOT-523 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUD6263E Series types are Enhanced High Voltage Silicon Schottky diodes, epoxy molded in an ULTRAmini
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CMUD6263E
CMUD6263AE
CMUD6263CE
CMUD6263SE
OT-523
100mA
marking 6CS
MARKING CODE VF
CMUD6263AE
CMUD6263CE
CMUD6263E
CMUD6263SE
mv marking code
marking code IF
marking r2 diode
C63 SCHOTTKY DIODES 2
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C63 SCHOTTKY DIODES 2
Abstract: DIODE C63 mv 380 common anode schottky power CMUD6263AE CMUD6263CE CMUD6263E CMUD6263SE 320 MARKING CODE
Text: Central CMUD6263E CMUD6263AE CMUD6263CE CMUD6263SE ENHANCED SPECIFICATION SURFACE MOUNT ULTRAmini SILICON SCHOTTKY DIODES TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUD6263E Series types are Enhanced High Voltage Silicon Schottky diodes, epoxy molded in an ULTRAmini™
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CMUD6263E
CMUD6263AE
CMUD6263CE
CMUD6263SE
OT-523
100mA
CMUD6263E
CMUD6263AE
C63 SCHOTTKY DIODES 2
DIODE C63
mv 380
common anode schottky power
CMUD6263CE
CMUD6263SE
320 MARKING CODE
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C63 SCHOTTKY DIODES 2
Abstract: c6a sot DIODE C63 MV marking
Text: Central CMUD6263E CMUD6263AE CMUD6263CE CMUD6263SE ENHANCED SPECIFICATION SURFACE MOUNT ULTRAmini SILICON SCHOTTKY DIODES TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUD6263E Series types are Enhanced High Voltage Silicon Schottky diodes, epoxy molded in an ULTRAmini™
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CMUD6263E
CMUD6263AE
CMUD6263CE
CMUD6263SE
OT-523
100mA
C63 SCHOTTKY DIODES 2
c6a sot
DIODE C63
MV marking
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BLY89C
Abstract: MSB056
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLY89C VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification VHF power transistor BLY89C DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,
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BLY89C
SC08a
BLY89C
MSB056
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BLY89C
Abstract: MSB056
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLY89C VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor BLY89C DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial
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BLY89C
BLY89C
MSB056
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sot123 package
Abstract: SOT123 philips Trimmer 60 pf BLV12 philips 561
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV12 VHF power transistor Product specification September 1991 Philips Semiconductors Product specification VHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile BLV12 QUICK REFERENCE DATA
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BLV12
OT123
sot123 package
SOT123
philips Trimmer 60 pf
BLV12
philips 561
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BLW87
Abstract: SOT-123
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW87 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and
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BLW87
BLW87
SOT-123
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transistor gl 1117
Abstract: MGP485 Transistor gl 1117 B BLW60C IEC 320 C13 MSB056 MGP480
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW60C VHF power transistor Product specification File under Discrete Semiconductors, SC08a March 1993 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,
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BLW60C
SC08a
transistor gl 1117
MGP485
Transistor gl 1117 B
BLW60C
IEC 320 C13
MSB056
MGP480
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transistor gl 1117
Abstract: trimmer 3-30 pf BLW60C MSB056
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW60C VHF power transistor Product specification March 1993 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial
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BLW60C
transistor gl 1117
trimmer 3-30 pf
BLW60C
MSB056
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BY206
Abstract: blw86 4312 020 36640 HF power amplifier PHILIPS 4312 amplifier
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW86 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated h.f. and v.h.f.
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BLW86
BY206
blw86
4312 020 36640
HF power amplifier
PHILIPS 4312 amplifier
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BLW85
Abstract: gp550 SOt123 Package TP200
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW85 HF/VHF power transistor Product specification March 1993 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and
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BLW85
BLW85
gp550
SOt123 Package
TP200
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PDF
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4312 020 36640
Abstract: BLW86 HF power amplifier ferroxcube wideband hf choke PHILIPS 4312 amplifier BY206 BY206 diode SOt123 Package 22 pf trimmer capacitor datasheet 4 carbon wire resistor
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW86 HF/VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,
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BLW86
SC08a
4312 020 36640
BLW86
HF power amplifier
ferroxcube wideband hf choke
PHILIPS 4312 amplifier
BY206
BY206 diode
SOt123 Package
22 pf trimmer capacitor datasheet
4 carbon wire resistor
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C3216X7R1E105K
Abstract: ECJ2FB0J106M GRP155R71E103K GRP155R71E682K GRP155R71H102K GRP155R71H332K LMK325BJ106MN MAX1565 MAX1801 sot23 6333 5v
Text: 19-2810; Rev 1; 8/05 MAX1565 Evaluation Kit The MAX1565 evaluation kit EV kit is a fully assembled and tested circuit board that accepts 1.5V to 3.6V input voltages and provides all the output voltages required for a typical digital still camera. The outputs consist of
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MAX1565
MAX1801
C3216X7R1E105K
ECJ2FB0J106M
GRP155R71E103K
GRP155R71E682K
GRP155R71H102K
GRP155R71H332K
LMK325BJ106MN
MAX1801
sot23 6333 5v
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IC2b
Abstract: ic1a "Sallen-Key" notch single-ended to differential conversion inverting bandpass Sallen-Key AN-1606 6pin SC-70 R4 AN1606
Text: National Semiconductor Application Note 1606 Mike Stout July 2007 SOT-23/SC-70 Overview The 551012875 and 551052922 Universal Evaluation Boards are designed to aid in the evaluation and testing of National Semiconductor’s low voltage/ low power and some precision
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OT-23/SC-70
OT-23
SC-70
AN-1606
IC2b
ic1a
"Sallen-Key" notch
single-ended to differential conversion
inverting bandpass Sallen-Key
AN-1606
6pin SC-70 R4
AN1606
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IC2b
Abstract: AN1606 IC2A r4b SOT-23 "Sallen-Key" notch single-ended to differential conversion
Text: National Semiconductor Application Note 1606 Mike Stout September 8, 2009 SOT-23/SC-70 Overview The 551012875 and 551012922 Universal Evaluation Boards are designed to aid in the evaluation and testing of National Semiconductor’s low voltage/ low power and some precision
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OT-23/SC-70
OT-23
SC-70
AN-1606
IC2b
AN1606
IC2A
r4b SOT-23
"Sallen-Key" notch
single-ended to differential conversion
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Untitled
Abstract: No abstract text available
Text: IRAUDAMP11 120W x 3 Channel Class D Audio Power Amplifier Using the IRS2053M and IRF6665 By Jun Honda, Liwei Zheng CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of IRAUDAMP11 Demo board; • Always wear safety glasses whenever operating Demo Board
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IRAUDAMP11
IRS2053M
IRF6665
IRAUDAMP11
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BLW40
Abstract: gp 722
Text: Philips Semiconductors bbSBTBl ODSTaBS DTT ApX _BLW40 VHF power tra n s is to r_ AflER PHILIPS/DISCRETE FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability.
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BLW40
OT120
LA368
BLW40
gp 722
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BLW40
Abstract: MCD205 TLO 721
Text: Philips Sem iconductors I 7 1 1 DS2 b 0 0 t>3232 3 bS ^BPHIN PHILIPS INTERNATIONAL VHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. Product specification
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711065b
00b3535
BLW40
OT120
PINNING-SOT120
BLW40
MCD205
TLO 721
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b b S B ' i a i □QSt17Q5 2flb WAPX b'JE D X BLY89C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized
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QSt17Q5
BLY89C
Z77109
7Z7710S
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Untitled
Abstract: No abstract text available
Text: Philips Sem iconductors b b 5 3 ^ 3 1 DDE6TES 756 APX Product specification BLV13 VHF power transistor M AUER PHILIPS/DISCRETE QUICK REFERENCE DATA RF performance at T ^ = 25 °C in a common emitter test circuit. FEATURES • Gold metallization ensures excellent reliability.
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BLV13
bbS3131
MCD211
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E D bbS3^31 QQ2T474 72T APX DLVVO / V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f, and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is
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QQ2T474
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BLW10
Abstract: BLW40 mcd202 philips Film-dielectric Trimmer Capacitors 808 RF POWER TRANSISTOR NPN vhf sot120 LA 4451 philips Trimmer 60 pf QDST337 BLw vhf
Text: Philips Semiconductors M b b S B 1^ ! DTT • AP X Productspecification VHF power tr a n s is to r _ BLW40 AMER PHILIPS/DISCRETE b^E » FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures
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BLW40
OT120
-SOT120
MBA451
BLW10
BLW40
mcd202
philips Film-dielectric Trimmer Capacitors 808
RF POWER TRANSISTOR NPN vhf
sot120
LA 4451
philips Trimmer 60 pf
QDST337
BLw vhf
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SOT123 Package
Abstract: sot123 TRANSISTOR 2X5 BLV12
Text: P ro d u cT jg je H ica tjo n Philips Semiconductor* BLV12 VHF power transistor FEATURES • Emitter-ballasting resistors lor an optimum temperature profile • Excellent reliability • Withstands full load mismatch. QUICK REFERENCE DATA RF performance a t T^, = 25 °C In a common emitter test circuit.
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BLV12
OT123
PINNING-SOT123
1EC134)
D03Slb0
SOT123 Package
sot123
TRANSISTOR 2X5
BLV12
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