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    C2012JF1C475Z

    Abstract: C4532JF1H106Z C5750JF1E476Z C2012JF1A106Z C3216JF1H225Z c1608jf1a225z c3225 transistor C1608JF1C105Z CC0603 x5r C1608CH1H100D
    Text: 1/15 General Multilayer Ceramic Chip Capacitors C Series FEATURES • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and


    Original     		PDF C5750X5R1H106K C5750X5R1H106M C5750X5R1E106K C5750X5R1E106M C5750X5R1E156M C5750X5R1E226M C5750X5R1C336M C5750X5R1C476M C2012JF1C475Z C4532JF1H106Z C5750JF1E476Z C2012JF1A106Z C3216JF1H225Z c1608jf1a225z c3225 transistor C1608JF1C105Z CC0603 x5r C1608CH1H100D

    C1608CH1H010C080AA

    Abstract: C1608X7R1H103K080AA 1608 B 100NF C2012X5R1H105K C1005X5R1A225K050BC c2012x5r1v C3216JB1H106K C1005C0G1H100C
    Text: Multilayer Ceramic Chip Capacitors General use C series Type: C0402[EIA CC01005] C0603[EIA CC0201] C1005[EIA CC0402] C1608[EIA CC0603] C2012[EIA CC0805] C3216[EIA CC1206] C3225[EIA CC1210] C4532[EIA CC1812] C5750[EIA CC2220] Issue date: August 2011 • All specifications are subject to change without notice.


    Original     		PDF C0402 CC01005] C0603 CC0201] C1005 CC0402] C1608 CC0603] C2012 CC0805] C1608CH1H010C080AA C1608X7R1H103K080AA 1608 B 100NF C2012X5R1H105K C1005X5R1A225K050BC c2012x5r1v C3216JB1H106K C1005C0G1H100C

    NI-1230-4H

    Abstract: ATC100B2R1BT500XT NI-1230-4S MRF8P8300HS
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P8300H Rev. 1, 4/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P8300HR6 MRF8P8300HSR6 Designed for W-CDMA and LTE base station applications with frequencies


    Original     		PDF MRF8P8300H MRF8P8300HR6 MRF8P8300HSR6 NI-1230-4H ATC100B2R1BT500XT NI-1230-4S MRF8P8300HS

    C5750JF1E476Z

    Abstract: No abstract text available
    Text: 1/15 General Multilayer Ceramic Chip Capacitors C Series FEATURES • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and


    Original     		PDF C5750X5R1H106K C5750X5R1H106M C5750X5R1E106K C5750X5R1E106M C5750X5R1E156M C5750X5R1E226M C5750X5R1C336M C5750X5R1C476M C5750JF1E476Z

    C5750JF1H226ZT

    Abstract: AN3263 C3225JB2A105KT tdk MRF6V4300N MRF6V4300NBR1 JESD22-A113 Resistor mttf C3225JB2A105KT AN1955 MRF6V4300NR1
    Text: Document Number: MRF6V4300N Rev. 2, 3/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V4300NR1 MRF6V4300NBR1 Designed primarily for CW large-signal output and driver applications with


    Original     		PDF MRF6V4300N MRF6V4300NR1 MRF6V4300NBR1 MRF6V4300NR1 C5750JF1H226ZT AN3263 C3225JB2A105KT tdk MRF6V4300N MRF6V4300NBR1 JESD22-A113 Resistor mttf C3225JB2A105KT AN1955

    j821

    Abstract: MRF8S26060H C5750JF1H226ZT AN1955 JESD22-A114 C5750X7R1H106 465I-02 MRF8S26060HR MRF8S26060HS
    Text: Document Number: MRF8S26060H Rev. 0, 4/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S26060HR3 MRF8S26060HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies


    Original     		PDF MRF8S26060H MRF8S26060HR3 MRF8S26060HSR3 MRF8S26060HR3 j821 MRF8S26060H C5750JF1H226ZT AN1955 JESD22-A114 C5750X7R1H106 465I-02 MRF8S26060HR MRF8S26060HS

    AN3263

    Abstract: MRF6V4300N AN1955 MRF6V4300NBR1 MRF6V4300NR1 C3225JB2A105KT
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V4300N Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V4300NR1 MRF6V4300NBR1 Designed primarily for CW large-signal output and driver applications with


    Original     		PDF MRF6V4300N MRF6V4300NR1 MRF6V4300NBR1 MRF6V4300NR1 AN3263 MRF6V4300N AN1955 MRF6V4300NBR1 C3225JB2A105KT

    C1608JB1H472K

    Abstract: C4532JF1C476 C2012JF1H105Z C3225JB0J107M C1608JF1H104Z C0603CH1H010C C0603CH1H0R5C C0603CH1HR75C C4532JF C1005CH1H120J
    Text: 1/15 General Multilayer Ceramic Chip Capacitors C Series FEATURES • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and


    Original     		PDF C5750X5R1H106K C5750X5R1H106M C5750X5R1E106K C5750X5R1E106M C5750X5R1E156M C5750X5R1E226M C5750X5R1C336M C5750X5R1C476M C1608JB1H472K C4532JF1C476 C2012JF1H105Z C3225JB0J107M C1608JF1H104Z C0603CH1H010C C0603CH1H0R5C C0603CH1HR75C C4532JF C1005CH1H120J

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S26120H Rev. 0, 6/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S26120HR3 MRF8S26120HSR3 Designed for W-CDMA and LTE base station applications with frequencies


    Original     		PDF MRF8S26120H MRF8S26120HR3 MRF8S26120HSR3 MRF8S26120HR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P8300H Rev. 0, 1/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P8300HR6 MRF8P8300HSR6 Designed for W-CDMA and LTE base station applications with frequencies


    Original     		PDF MRF8P8300H MRF8P8300HR6 MRF8P8300HSR6 MRF8P8300HR6

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF8S26060H Rev. 0, 4/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S26060HR3 MRF8S26060HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies


    Original     		PDF MRF8S26060H MRF8S26060HR3 MRF8S26060HSR3 MRF8S26060HR3

    C5750JF1E476Z

    Abstract: C4532JF1H106Z C3216JF1C106Z C5750JB1E226M C1608JF1C105Z C2012JB1E684K C4532JF C3216JB0J476 C2012JF1A106Z C0603CH1H0R5C
    Text: w w w . D a t a S h e e t 4 U . c o 1/15 m General Multilayer Ceramic Chip Capacitors C Series FEATURES • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and


    Original     		PDF C5750X5R1H106K C5750X5R1H106M C5750X5R1E106K C5750X5R1E106M C5750X5R1E156M C5750X5R1E226M C5750X5R1C336M C5750X5R1C476M C5750JF1E476Z C4532JF1H106Z C3216JF1C106Z C5750JB1E226M C1608JF1C105Z C2012JB1E684K C4532JF C3216JB0J476 C2012JF1A106Z C0603CH1H0R5C

    C5750X7R1H106M

    Abstract: c5750x7r1h106k C5750JF1E476Z C5750Y5V1H226Z tdk capacitors c5750 C5750JF1H226Z tdk capacitors Y5V C5750X5R1H106K C5750X5R1H106M C5750
    Text: TDK Equivalent Circuit Model Library Oct. 31, 2007 Model Type: Simple Model Capacitors / C5750 Series X5R Circuit Diagram Circuit Parameters Part No. C1[uF] L1[nH] R1[ohm] R2[Gohm] C5750X5R1H106K 10 0.65 0.003 10.0 C5750X5R1H106M 10 0.65 0.003 10.0 C5750X5R1C336M


    Original     		PDF C5750 C5750X5R1H106K C5750X5R1H106M C5750X5R1C336M C5750X5R1C476M C5750X5R1A686M C5750X7R1H106K C5750JF1H226Z C5750X7R1H106M c5750x7r1h106k C5750JF1E476Z C5750Y5V1H226Z tdk capacitors c5750 C5750JF1H226Z tdk capacitors Y5V C5750X5R1H106K C5750X5R1H106M

    C5750Y5V1H226Z

    Abstract: C5750Y5V1E476Z
    Text: 1/29 REMINDERS Please read this before using the product. SAFETY REMINDERS REMINDERS 1. If you intend to use a product listed in this catalog for a purpose that may cause loss of life or other damage, you must contact our company’s sales window. 2. We may modify products or discontinue production of a product listed in this catalog without prior notification.


    Original     		PDF C5750JF1H226Z C5750Y5V1H226Z C5750JF1E476Z C5750Y5V1E476Z C5750JF1C107Z C5750Y5V1C107Z C5750Y5V1H226Z C5750Y5V1E476Z

    j377

    Abstract: MRF8S26120H MRF8S26120HS MRF8S26120HSR3 MRF8S26120 CRCW120610K0FKEA MRF8S26120HR3 j382 ATC800B HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S26120H Rev. 0, 6/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S26120HR3 MRF8S26120HSR3 Designed for W-CDMA and LTE base station applications with frequencies


    Original     		PDF MRF8S26120H MRF8S26120HR3 MRF8S26120HSR3 MRF8S26120HR3 j377 MRF8S26120H MRF8S26120HS MRF8S26120HSR3 MRF8S26120 CRCW120610K0FKEA j382 ATC800B HSR3

    C2012JB1A226M

    Abstract: C2012JB1C106K C2012X6S0J226K C2012X5R1C226K C2012X6S0J226M C3225X7R1H335K C1608X5R1C475K C2012X5R1C226M C5750Y5V1C107Z C1608X5R1A106M
    Text: 持蚊薮頭盲管頭塀窮否匂 匯違喘 C 狼双 Type: C0603[EIA CC0201] C1005[EIA CC0402] C1608[EIA CC0603] C2012[EIA CC0805] C3216[EIA CC1206] C3225[EIA CC1210] C4532[EIA CC1812] C5750[EIA CC2220] Issue date: April 2010 ●芝墮坪否，壓短嗤嚠御議秤趨和嗤辛嬬個序才延厚，萩嚠參疎盾。


    Original     		PDF C0603 CC0201] C1005 CC0402] C1608 CC0603] C2012 CC0805] C3216 CC1206] C2012JB1A226M C2012JB1C106K C2012X6S0J226K C2012X5R1C226K C2012X6S0J226M C3225X7R1H335K C1608X5R1C475K C2012X5R1C226M C5750Y5V1C107Z C1608X5R1A106M

    C4532JF1H106

    Abstract: C2012JF C2012JF1A106Z C4532JF1C476 C4532JF C2012JF1C C1608JF1H104 C3216JF1C106Z C5750JF1E476Z C3216JF1H225Z
    Text: 1/15 General Multilayer Ceramic Chip Capacitors C Series FEATURES • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and


    Original     		PDF C5750X5R1H106K C5750X5R1H106M C5750X5R1E106K C5750X5R1E106M C5750X5R1E156M C5750X5R1E226M C5750X5R1C336M C5750X5R1C476M C4532JF1H106 C2012JF C2012JF1A106Z C4532JF1C476 C4532JF C2012JF1C C1608JF1H104 C3216JF1C106Z C5750JF1E476Z C3216JF1H225Z

    C3216X5R1E156M

    Abstract: C3216X5R1E106K 470nF 50V X5R C0603X5R0J224K C3216X5R1H106K C2012X5R1H104M C1608X7R1V474M080AB C1005X5R1C105K C1005X7S1A474K C2012X6S1H475K
    Text: Multilayer Ceramic Chip Capacitors General use C series Type: C0402[EIA CC01005] C0603[EIA CC0201] C1005[EIA CC0402] C1608[EIA CC0603] C2012[EIA CC0805] C3216[EIA CC1206] C3225[EIA CC1210] C4532[EIA CC1812] C5750[EIA CC2220] Issue date: September 2011 • All specifications are subject to change without notice.


    Original     		PDF C0402 CC01005] C0603 CC0201] C1005 CC0402] C1608 CC0603] C2012 CC0805] C3216X5R1E156M C3216X5R1E106K 470nF 50V X5R C0603X5R0J224K C3216X5R1H106K C2012X5R1H104M C1608X7R1V474M080AB C1005X5R1C105K C1005X7S1A474K C2012X6S1H475K

    C1608X5R1A106M

    Abstract: C2012JB1A226M C2012C0G1H152J c3225 transistor C2012C0G1H821 C2012Y5V1H225Z C5750Y5V1H226Z C2012X5R1C226K C2012X7R1C225K C3216X5R1C106K
    Text: Multilayer Ceramic Chip Capacitors General use C series Type: C0603[EIA CC0201] C1005[EIA CC0402] C1608[EIA CC0603] C2012[EIA CC0805] C3216[EIA CC1206] C3225[EIA CC1210] C4532[EIA CC1812] C5750[EIA CC2220] Issue date: April 2010 • All specifications are subject to change without notice.


    Original     		PDF C0603 CC0201] C1005 CC0402] C1608 CC0603] C2012 CC0805] C3216 CC1206] C1608X5R1A106M C2012JB1A226M C2012C0G1H152J c3225 transistor C2012C0G1H821 C2012Y5V1H225Z C5750Y5V1H226Z C2012X5R1C226K C2012X7R1C225K C3216X5R1C106K

    C1005JB0J335M

    Abstract: C1005JB0J475M C1005JB1A225K C1005JB0J225K C4532X5R1A107MT C5750Y5V1H226ZT C2012X5R1C226M C3216X5R1C106K C1608Y5V0J106Z C1005X5R1C474K
    Text: 積層セラミックチップコンデンサ 一般用 C シリーズ Type: C0603[EIA CC0201] C1005[EIA CC0402] C1608[EIA CC0603] C2012[EIA CC0805] C3216[EIA CC1206] C3225[EIA CC1210] C4532[EIA CC1812] C5750[EIA CC2220] Issue date: April 2010 ●製品をより正しく安全にご使用いただくために、さらに詳細な特性・仕様をご確認いただける納入仕様書をぜひご請求ください。


    Original     		PDF C0603 CC0201] C1005 CC0402] C1608 CC0603] C2012 CC0805] C3216 CC1206] C1005JB0J335M C1005JB0J475M C1005JB1A225K C1005JB0J225K C4532X5R1A107MT C5750Y5V1H226ZT C2012X5R1C226M C3216X5R1C106K C1608Y5V0J106Z C1005X5R1C474K

    J377

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9170N Rev. 1, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9170NR3 Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8S9170N MRF8S9170NR3 J377

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V4300N Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V4300NR1 MRF6V4300NBR1 Designed primarily for CW large-signal output and driver applications with


    Original     		PDF MRF6V4300N MRF6V4300NR1 MRF6V4300NBR1 MRF6V4300NR1

    C3225JF1H106

    Abstract: C3216X5R1C106K C4532JF C3225JB1E475M C2012JF C3225X5R1H225M CC0201 C1005JF1E104Z C5750Y5V1H226Z C2012JF1H
    Text: 1/29 REMINDERS Please read this before using the product. SAFETY REMINDERS REMINDERS 1. If you intend to use a product listed in this catalog for a purpose that may cause loss of life or other damage, you must contact our company’s sales window. 2. We may modify products or discontinue production of a product listed in this catalog without prior notification.


    Original     		PDF C5750Y5V1H226Z C5750JF1E476Z C5750Y5V1E476Z C5750JF1C107Z C5750Y5V1C107Z C3225JF1H106 C3216X5R1C106K C4532JF C3225JB1E475M C2012JF C3225X5R1H225M CC0201 C1005JF1E104Z C5750Y5V1H226Z C2012JF1H

    C5750JF1H226ZT

    Abstract: C3225JB2A105KT AN3263 C3225CH2A153JT C3225JB2A105KT tdk ATC100B510JT500XT A113 A114 AN1955 C101
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V4300N Rev. 0, 7/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V4300NR1 MRF6V4300NBR1 Designed primarily for CW large - signal output and driver applications with


    Original     		PDF MRF6V4300N MRF6V4300NR1 MRF6V4300NBR1 MRF6V4300NR1 C5750JF1H226ZT C3225JB2A105KT AN3263 C3225CH2A153JT C3225JB2A105KT tdk ATC100B510JT500XT A113 A114 AN1955 C101