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    Untitled

    Abstract: No abstract text available
    Text: RCD051N20 Data Sheet Nch 200V 5.0A Power MOSFET lOutline VDSS 200V RDS on (Max.) 760mW ID 5.0A PD 20W lFeatures CPT3 (SC-63) <SOT-428> (3) (2) (1) lInner circuit 1) Low on-resistance. 3) Drive circuits can be simple. (1) Gate (2) Drain (3) Source 4) Parallel use is easy.


    Original
    PDF RCD051N20 760mW SC-63) OT-428> C51N20 R1102A

    Untitled

    Abstract: No abstract text available
    Text: RCD051N20 Nch 200V 5.0A Power MOSFET Data Sheet lOutline VDSS 200V RDS on (Max.) 760mW ID 5.0A PD 20W lFeatures CPT3 (SC-63) <SOT-428> (3) (2) (1) lInner circuit 1) Low on-resistance. 3) Drive circuits can be simple. (1) Gate (2) Drain (3) Source 4) Parallel use is easy.


    Original
    PDF RCD051N20 760mW SC-63) OT-428> C51N20 R1102A

    Untitled

    Abstract: No abstract text available
    Text: RCD051N20 Datasheet Nch 200V 5.0A Power MOSFET lOutline VDSS 200V RDS on (Max.) 760mW ID 5.0A PD 20W lFeatures CPT3 (SC-63) <SOT-428> (3) (2) (1) lInner circuit 1) Low on-resistance. 3) Drive circuits can be simple. (1) Gate (2) Drain (3) Source 4) Parallel use is easy.


    Original
    PDF RCD051N20 760mW SC-63) OT-428> R1120A

    Untitled

    Abstract: No abstract text available
    Text: RCD051N20 Nch 200V 5.0A Power MOSFET Datasheet lOutline VDSS 200V RDS on (Max.) 760mW ID 5.0A PD 20W lFeatures CPT3 (SC-63) <SOT-428> (3) (2) (1) lInner circuit 1) Low on-resistance. 3) Drive circuits can be simple. (1) Gate (2) Drain (3) Source 4) Parallel use is easy.


    Original
    PDF RCD051N20 760mW SC-63) OT-428> C51N20 R1120A

    sot428 Part marking

    Abstract: No abstract text available
    Text: RCD051N20 RCD051N20 Datasheet Nch 200V 5.0A Power MOSFET lOutline VDSS 200V RDS on (Max.) 760mW ID 5.0A PD 20W lFeatures CPT3 (SC-63) <SOT-428> (3) (2) (1) lInner circuit 1) Low on-resistance. 3) Drive circuits can be simple. (1) Gate (2) Drain (3) Source


    Original
    PDF RCD051N20 760mW SC-63) OT-428> R1120A sot428 Part marking