C30985E PHOTODIODE ARRAY LINEAR Search Results

C30985E PHOTODIODE ARRAY LINEAR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TRS8E65H		Toshiba Electronic Devices & Storage Corporation	SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L
TBAW56		Toshiba Electronic Devices & Storage Corporation	Switching Diode, 80 V, 0.215 A, SOT23
TRS10E65H		Toshiba Electronic Devices & Storage Corporation	SiC Schottky Barrier Diode (SBD), 650 V, 10 A, TO-220-2L
TRS6E65H		Toshiba Electronic Devices & Storage Corporation	SiC Schottky Barrier Diode (SBD), 650 V, 6 A, TO-220-2L
TRS3E65H		Toshiba Electronic Devices & Storage Corporation	SiC Schottky Barrier Diode (SBD), 650 V, 3 A, TO-220-2L

C30985E PHOTODIODE ARRAY LINEAR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: DATASHEET Photon Detection C30985E 25-Element Silicon Avalanche Photodiode Si APD Linear Array The C30985E is a 25-element silicon avalanche photodiode (Si APD) consisting of a double diffused “reach through” structure. This structure provides high responsivity up to 1060 nm incidence radiation and even beyond, as well as	Original	PDF	C30985E 25-Element C30985E
APD Arrays Abstract: No abstract text available Text: PhotodiodeS฀For฀hiGh-PerFormAnce฀APPlicAtionS฀ Avalanche Photodiodes Si APD Arrays Avalanche Photodiodes – Si APD Arrays Applications • LIDAR Light Detection And Ranging • Particle detection • Spot tracking and alignment systems • Adaptive optics	Original	PDF	C30927 C30985E C30927EH-01 C30927EH-02 C30927EH-03 C30985E APD Arrays
Untitled Abstract: No abstract text available Text: Photodiodes for High-Performance Applications Avalanche Avalanche Photodiodes Si APD Arrays Photodiodes FOR ANALYTICAL Applications Avalanche Photodiodes – Si APD Arrays Applications • Spectroscopy • Particle detection • Spot tracking and alignment systems	Original	PDF	C30927 C30985E C30927EH-01 C30927EH-02 C30927EH-03 C30985E
FND-100Q Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E Text: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.	Original	PDF	CAT0506P FND-100Q FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
C1383 NPN transistor collector base and emitter Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383 Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,	Original	PDF	10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
l1117 1.2 Abstract: No abstract text available Text: E G & G/ CANA DA/ OPTOELEK I t C i l 10 D • 3D3DblO OOODIST SÛT « C A N A Electro Optics Photodiode C30985E DATA SHEET ^sKjg 25-Element Silicon Avalanche Photodiode Linear Array for Detection of 900 to 1060 nm Radiation High Quantum Efficiency — 85% typical at 900 nm	OCR Scan	PDF	C30985E 25-Element L-1117 C30985E ED-0006/09/87 l1117 1.2
C30985E Photodiode Array linear Abstract: C30985E 32 Elements linear Avalanche Photodiode Array rca 711 C30985 Photodiode Array 32 element 30-element L1117 l1117 g linear array photodiode element Text: E G & G/CANADA/OPTOELEK I t C i l IO D • B030bl0 OOODIST SGT * C A N A Photodiode C30985E DATA SHEET Optics 25-Element Silicon Avalanche Photodiode Linear Array for Detection of 900 to 1060 nm Radiation High Quantum Efficiency — 85% typical at 900 nm 18% typical at 1060 nm	OCR Scan	PDF	B030bl0 C30985E 25-Element L-1117 C30985E 34-pin ED-0006/09/87 C30985E Photodiode Array linear 32 Elements linear Avalanche Photodiode Array rca 711 C30985 Photodiode Array 32 element 30-element L1117 l1117 g linear array photodiode element