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Excelitas Technologies Corporation C30955EH SENSOR PHOTODIODE 900NM TO5
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	C30955EH	Box			50	1 - 10 - 100 $360.75 1000 $360.75 10000 $360.75	Buy Now

C30955 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
C30955E		LICEL	Photodiode, Module, 34A/W Sensitivity, 0.1uA		Original	PDF
C30955E		Unknown	Photodiode		Scan	PDF
C30955E		Unknown	(C30954E - C30956E) Photodiode		Scan	PDF
C30955E		RCA Solid State	Photodiodes		Scan	PDF
C30955EH		Excelitas Technologies	SI APD, 1.5MM, TO-5, 1064NM ENHA		Original	PDF

C30955 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
C30955EH Abstract: No abstract text available Text: Long Wavelength Enhanced Silicon APD C30954EH, C30955EH and C30956EH Series Overview Features and Benefits The Excelitas C30954EH, C30955EH, and C30956EH are general purpose silicon avalanche photodiodes made using a double-diffused "reach through" structure. The design of these	Original	C30954EH, C30955EH C30956EH C30955EH, C30956EH C30954EH DTS0308	PDF
C30955EH Abstract: No abstract text available Text: Overview Features and Benefits The PerkinElmer C30954EH, C30955EH, and C30956EH are general purpose silicon avalanche photodiodes made using a double-diffused "reach through" structure. The design of these photodiodes such that their long wave response i.e. > 900 nm has been	Original	C30954EH, C30955EH, C30956EH C30954EH C30956EH. DTS0308 C30955EH	PDF
C1383 NPN transistor collector base and emitter Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383 Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,	Original	10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383	PDF
FND-100Q Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E Text: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.	Original	CAT0506P FND-100Q FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E	PDF
C30902S Abstract: C30817E C30817 C30955EH Text: Photodiodes for High-Performance Applications Avalanche Avalanche Photodiodes Silicon and InGaAs APDs Photodiodes FOR Industrial & ANALYTICAL Applications Avalanche Photodiodes – Silicon and InGaAs APDs Applications • Laser range finder • Scanning video imager	Original	C30902EH, C30921EH C30902SH, C30921SH C30902S C30817E C30817 C30955EH	PDF
C30817E Abstract: C30955EH Text: PhotodiodeS฀For฀hiGh-PerFormAnce฀APPlicAtionS฀ Avalanche Photodiodes Silicon and InGaAs APDs Avalanche Photodiodes – Silicon and InGaAs APDs Applications • Laser range inder • Free space communication Product฀description hese rear entry “reach-through” silicon APDs ofer the best compromise in terms of cost and	Original	C30902 C30902EH, C30921EH C30902SH, C30921SH C30817E C30955EH	PDF
C30817 Abstract: C30954E ISO-9001-87 C30872 C30916E c30954 C30956E C30956 c30955e avalanche photodiodes Text: J L ,E G slG CANADA LTD. Optoelectronics Divisio Formerly i t C A Effective January 1,1991 ISO-9001-87 Cert *001975 Photodiode C30954E, C30955E, C30956E DATA SHEET Large Area Long Wavelength Enhanced Silicon Avalanche Photodiodes for General-Purpose Applications	OCR Scan	ISO-9001-87 C30954E, C30955E, C30956E C30954E C30955E C30956E C30817 ISO-9001-87 C30872 C30916E c30954 C30956 c30955e avalanche photodiodes	PDF
C30817 Abstract: s915 C30872 C30954E C30955E tic 1060 C30956E s914 C30916E 92LS-S916 Text: £ n G & G/CANADA/OPTOELEK e / ID » l Electro Optics 3 D 3 D b lO O O O O IH ^ bbO ICANA 'T '- y / '- S V Photodiode C30954E, C30955E, C30956E DATA SHEET Large Area Long Wavelength Enhanced Silicon Avalanche Photodiodes for General-Purpose Applications • High Quantum Efficiency —	OCR Scan	3030bl0 C30954E, C30955E, C30956E C30954E C30955E Range--40Â C30817 s915 C30872 C30955E tic 1060 C30956E s914 C30916E 92LS-S916	PDF
Untitled Abstract: No abstract text available Text: £ G & G/CANADA/OPTOELEK I t C J I sfj ID D Electro Optics m 3030bl0 D O G G I E bbO ICANA Photodiode C30954E, C30955E, C30956E DATA SHEET Large Area Long Wavelength Enhanced Silicon Avalanche Photodiodes for General-Purpose Applications • High Quantum Efficiency —	OCR Scan	3030bl0 C30954E, C30955E, C30956E C30956E	PDF