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    C243 TRANSISTOR Search Results

    C243 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    C243 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 8-Bit Touch Key Flash MCU BS83B08-3/BS83B12-3 BS83B16-3/BS83B16G-3 BS83C24-3 Revision: 1.40 Date: November 6, 2012 Contents Table of Contents Technical Document .6 Features .6


    Original     		PDF BS83B08-3/BS83B12-3 BS83B16-3/BS83B16G-3 BS83C24-3

    Untitled

    Abstract: No abstract text available
    Text: 8-Bit Touch Key Flash MCU BS83B08-3/BS83B12-3 BS83B16-3/BS83B16G-3 BS83C24-3 Revision: 1.40 Date: November 6, 2012 Contents Table of Contents Technical Document .6 Features .6


    Original     		PDF BS83B08-3/BS83B12-3 BS83B16-3/BS83B16G-3 BS83C24-3

    transistor c243

    Abstract: transistor c246 C 245 B C-247 C-248 D-12 IRGBF30F
    Text: PD - 9.773 IRGBF30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 900V VCE(sat) ≤ 3.7V


    Original     		PDF IRGBF30F 10kHz) O-220AB C-248 transistor c243 transistor c246 C 245 B C-247 C-248 D-12 IRGBF30F

    transistor c245

    Abstract: transistor c246 transistor c243 c245 transistor transistor c247 C243 transistor C247 c246 transistor IRGBF30F C-247
    Text: PD - 9.773 IRGBF30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 900V VCE(sat) ≤ 3.7V


    Original     		PDF IRGBF30F 10kHz) O-220AB C-248 transistor c245 transistor c246 transistor c243 c245 transistor transistor c247 C243 transistor C247 c246 transistor IRGBF30F C-247

    transistor c246

    Abstract: transistor c243 C-247 C-248 D-12 IRGBF30F IC 2 5/transistor c243
    Text: Previous Datasheet Index Next Data Sheet PD - 9.773 IRGBF30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve


    Original     		PDF IRGBF30F 10kHz) O-220AB C-248 transistor c246 transistor c243 C-247 C-248 D-12 IRGBF30F IC 2 5/transistor c243

    g31 m7 te MOTHERBOARD CIRCUIT diagram

    Abstract: FDV301N SOT23 D E6327 Application
    Text: User's Guide SLLU148 – May 2011 TLK10002 Dual-Channel, 10-Gbps, Multi-Rate Transceiver Evaluation Module This user’s guide describes the usage and construction of the TLK10002 evaluation module EVM . This document provides guidance on proper use by showing some device configurations and test modes. In


    Original     		PDF SLLU148 TLK10002 10-Gbps, g31 m7 te MOTHERBOARD CIRCUIT diagram FDV301N SOT23 D E6327 Application

    transistor c246

    Abstract: transistor c245 transistor c243 c243 SA900 L372 c371 transistor SA900BE IS-136 SA7025
    Text: INTEGRATED CIRCUITS SA900 I/Q transmit modulator Preliminary specification IC17 Data Handbook Philips Semiconductors 1997 Sept 16 Philips Semiconductors Preliminary specification I/Q transmit modulator SA900 DO NOT DISTRIBUTE WITHOUT ECN DATED AFTER Sept 16, 1997


    Original     		PDF SA900 SA900 transistor c246 transistor c245 transistor c243 c243 L372 c371 transistor SA900BE IS-136 SA7025

    DVP-10SX

    Abstract: DVP-14SS delta plc DVP 14SS DVP-32EH DVP-80EH DVP-64EH DVP-32ES DVP-48EH DVP-60ES DVP-20EX
    Text: PLC www.delta.com.tw/industrialautomation PLC ASIA Delta Electronics, Inc. Taoyuan1 31-1, Xingbang Road, Guishan Industrial Zone, Taoyuan County 33370, Taiwan, R.O.C. TEL: 886-3-362-6301 / FAX: 886-3-362-7267 Delta Electronics Jiang Su Ltd. Wujiang Plant3


    Original     		PDF K100000 DVP-10SX DVP-14SS delta plc DVP 14SS DVP-32EH DVP-80EH DVP-64EH DVP-32ES DVP-48EH DVP-60ES DVP-20EX

    MMA0204-50

    Abstract: Zener C444 MMA-0204-50 C343 "zener diode" zener c346 C406 Zener BUF C221 diode c446 c343 diode motorola D402 user guide
    Text: Application Report SLEA032 - MARCH 2004 TAS5066-5121K6EVM Application Report Jonas Svendsen Digital Audio & Video Products The TAS5066-5121K6EVM PurePath Digital customer evaluation module demonstrates two integrated circuits TAS5066 and TAS5121DKD from Texas Instruments TI .


    Original     		PDF SLEA032 TAS5066-5121K6EVM TAS5066 TAS5121DKD 24-bit 192kHz. MMA0204-50 Zener C444 MMA-0204-50 C343 "zener diode" zener c346 C406 Zener BUF C221 diode c446 c343 diode motorola D402 user guide

    transistor d1047

    Abstract: transistor m1104 D1047 TRANSISTOR D1960 Delta WPLSoft sample d1266 D1265 D1071 power transistor m1104 transistor m1104 185
    Text: DVP-ES2 Operation Manual: Programming Table of Contents Chapter 1 – PLC Concepts 1.1 PLC Scan Method .1-2 1.2 Current


    Original     		PDF M1067 M1068 D1067 D1068 transistor d1047 transistor m1104 D1047 TRANSISTOR D1960 Delta WPLSoft sample d1266 D1265 D1071 power transistor m1104 transistor m1104 185

    c225 capacitor smd

    Abstract: D313 amplifier 500 watt audio subwoofer subwoofer 300 watts amplifier C507 Zener C919 diode BUF c907 Zener C444 power supply with regulator D313 high subwoofer 100 watts amplifier
    Text: Application Report SLEA031 - MARCH 2004 TAS5066-5112F6EVM Application Report Jonas Svendsen Digital Audio & Video Products The TAS5066-5112F6EVM PurePath Digital customer evaluation module demonstrates two integrated circuits TAS5066 and TAS5112ADFD from Texas Instruments TI .


    Original     		PDF SLEA031 TAS5066-5112F6EVM TAS5066 TAS5112ADFD 24-bit 192kHz. c225 capacitor smd D313 amplifier 500 watt audio subwoofer subwoofer 300 watts amplifier C507 Zener C919 diode BUF c907 Zener C444 power supply with regulator D313 high subwoofer 100 watts amplifier

    a26544

    Abstract: PCB BOARD DIMENSION BY SMA CONNECT transistor c243 U300 ADS5421 ADS5422 J200 J201 J202 SN74x16244
    Text: ADS5421/22EVM User’s Guide Literature Number: SBAU084 February 2003 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue


    Original     		PDF ADS5421/22EVM SBAU084 21/ADS5422 FB200, FB201 P10437CT SN65LVDS101 SN74ALVCH16244 TSSOP-48 a26544 PCB BOARD DIMENSION BY SMA CONNECT transistor c243 U300 ADS5421 ADS5422 J200 J201 J202 SN74x16244

    transistor c246

    Abstract: L372 smd transistor device marking p18 transistor c245 smd transistor marking code T11 philips radio 900MHz semiconductor SMD MARKING CODE ad 5.9 SA900
    Text: INTEGRATED CIRCUITS SA900 I/Q transmit modulator Preliminary specification IC17 Data Handbook Philips Semiconductors 1997 Sept 16 Philips Semiconductors Preliminary specification I/Q transmit modulator SA900 DO NOT DISTRIBUTE WITHOUT ECN DATED AFTER Sept 16, 1997


    Original     		PDF SA900 SA900 transistor c246 L372 smd transistor device marking p18 transistor c245 smd transistor marking code T11 philips radio 900MHz semiconductor SMD MARKING CODE ad 5.9

    smd diode C544

    Abstract: 10MQ040N Motorola DAP head smd diode c640 smd diode R622 toshiba c640 npn transistors C540 philips home theater power supply board semiconductor c243 sharp smd diode C641
    Text: Application Report SLEA036 - June 2004 TAS5010-5112F2EVM Application Report Jonas Svendsen Digital Audio and Video Products The TAS5010-5112F2EVM PurePath Digital customer evaluation module demonstrates the integrated circuits TAS5010PFB and TAS5112ADFD from Texas Instruments.


    Original     		PDF SLEA036 TAS5010-5112F2EVM TAS5010PFB TAS5112ADFD 24-bit TAS5010-5112F2EVM MECH01 smd diode C544 10MQ040N Motorola DAP head smd diode c640 smd diode R622 toshiba c640 npn transistors C540 philips home theater power supply board semiconductor c243 sharp smd diode C641

    dap 002

    Abstract: transistor a708 a708 transistor NPN A708 toshiba c640 DAP 07 power supply C516* npn transistor npn transistors C540 A708 smd c643
    Text: Application Report SLEA035 – June 2004 TAS5001-5122C2EVM Application Report Jonas Svendsen Digital Audio & Video Products The TAS5001-5122C2EVM PurePath Digital customer evaluation module demonstrates the integrated circuits TAS5001PFB and TAS5122DCA from Texas Instruments.


    Original     		PDF SLEA035 TAS5001-5122C2EVM TAS5001PFB TAS5122DCA 24-bit dap 002 transistor a708 a708 transistor NPN A708 toshiba c640 DAP 07 power supply C516* npn transistor npn transistors C540 A708 smd c643

    equivalent transistor D1555

    Abstract: transistor d1555 transistor d1047 d1555 transistor TRANSISTOR DATASHEET D1555 delta plc DVP 14SS DVP-40EH DVP-10SX d1555 D1557
    Text: PLC PLC DVP-PLC Application Manual 【Programming】 Table of Contents Chapter 1 Basic Principles of PLC Ladder Diagram Foreword: Background and Functions of PLC . 1-1 1.1 The Working Principles of Ladder Diagram . 1-1


    Original     		PDF 32-bit 32-bit 16-bit K100000 equivalent transistor D1555 transistor d1555 transistor d1047 d1555 transistor TRANSISTOR DATASHEET D1555 delta plc DVP 14SS DVP-40EH DVP-10SX d1555 D1557

    XTAL200

    Abstract: No abstract text available
    Text: User's Guide SLLU121 – October 2009 TLK100 External Voltages EVM This User Guide details the design and operation of the evaluation module EVM for the TLK100. 1 2 3 4 5 6 Contents TLK100 EVM Purpose and Content .


    Original     		PDF SLLU121 TLK100 TLK100. TLK100EXTEVM XTAL200

    DAP 002 power supply

    Abstract: dap 002 transistor a708 toshiba c640 a708 transistor NPN A708 npn transistors C540 A708 diode c341 DAP 07 power supply
    Text: Application Report SLEA035A – June 2004 – Revised April 2008 TAS5001-5122C2EVM Application Report Jonas Svendsen Digital Audio and Video Products The TAS5001-5122C2EVM PurePath Digital customer evaluation module demonstrates the integrated circuits TAS5001PFB and TAS5122DCA from Texas Instruments.


    Original     		PDF SLEA035A TAS5001-5122C2EVM TAS5001PFB TAS5122DCA 24-bit DAP 002 power supply dap 002 transistor a708 toshiba c640 a708 transistor NPN A708 npn transistors C540 A708 diode c341 DAP 07 power supply

    DVP-40EH

    Abstract: DVP-10SX DVP28SV11R2 DVP-32EH DVP14Ec DVP80EH00R3 DVP40es DVP-14SS DVP-08SN DVP64EH00R3
    Text: DVP-PLC Application Manual Programming Industrial Automation Headquarters Delta Electronics, Inc. Taoyuan Technology Center No.18, Xinglong Rd., Taoyuan City, Taoyuan County 33068, Taiwan TEL: 886-3-362-6301 / FAX: 886-3-371-6301 Asia Delta Electronics (Jiangsu) Ltd.


    Original     		PDF 113-API API156 296-API DVP-40EH DVP-10SX DVP28SV11R2 DVP-32EH DVP14Ec DVP80EH00R3 DVP40es DVP-14SS DVP-08SN DVP64EH00R3

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TM P47 C243/443 C M O S 4 - B IT M IC R O C O N T R O L L E R TMP47C243N, TMP47C443N TM P47C243M, TMP47C443M TM P47C243DM , TMP47C443DM The 47C243/443 are th e high speed and high perform ance 4 -b it single chip m icrocom puters, w ith 8 -b it A/D


    OCR Scan     		PDF C243/443 TMP47C243N, TMP47C443N P47C243M, TMP47C443M P47C243DM TMP47C443DM 47C243/443 TLCS-470 TMP47C243N

    sef530

    Abstract: SEF532 SEF531 60v 9A c243s
    Text: S G'S-THOMSON. 0 7 E 73C D 17*12*1237 17518 D •\ ' T N-CHANNEL POWER MDS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N'Channel enhancement mode Power-Mos field effect transistors. A B SO LU TE MAXIMUM RATINGS


    OCR Scan     		PDF SEF530 SEF531 SEFS32 sif533 00V/60V 00V/60V SEF532/SEF533 300ms, SGSP361 C-243 SEF532 60v 9A c243s

    transistor c246

    Abstract: transistor c243 C246 C243 transistor IRGBF30F
    Text: International l« i Rectifier PD - 9.773 IRGBF30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve


    OCR Scan     		PDF 10kHz) IRGBF30F O-220AB TQ-220AB C-248 transistor c246 transistor c243 C246 C243 transistor IRGBF30F

    transistor c246

    Abstract: transistor c245 c245 transistor
    Text: PD - 9.773 International üüRectffier IRGBF30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features JI* Lc J *.J • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve


    OCR Scan     		PDF IRGBF30F 10kHz) O-220AB C-247 46S5455 TQ-220AB C-248 transistor c246 transistor c245 c245 transistor

    f630

    Abstract: IRF630 HEXFET TRANSISTORS F633 IRFG31 IRF632 alps 103 DIODE C244 mosfet f630 IRFB32 IRF63Q
    Text: HE D I 4 055452 ÜGQâMTS t, | Data Sheet No. PD-9.309G INTERNATI ONAL RECTIFIER T -39-11 INTERNATIONAL RECTIFIER I “ R HEXFET* TRANSISTORS IRF63Q IRFG31 IM IRFB32 - C h a n n e l IRF633 Features: 200 Volt, 0.4 Ohm HEXFET TQ-220AB Plastic Package The HEXFET technology is the key to International Rec­


    OCR Scan     		PDF IRF63Q IRFG31 IRFB32 IRF633 TQ-220AB C-245 IRF630, IRF631, IRF632, IRF633 f630 IRF630 HEXFET TRANSISTORS F633 IRF632 alps 103 DIODE C244 mosfet f630