C2 MARK Search Results

C2 MARK Result Highlights (5)

Part	Manufacturer	Description
MG8097/B	Rochester Electronics LLC	8097 - Math Coprocessor - Dual marked (8506301ZA)
5490/BCA	Rochester Electronics LLC	5490 - Decade Counter - Dual marked (M38510/01307BCA)
5405/BCA	Rochester Electronics LLC	5405 - Gate - Dual marked (M38510/00108BCA)
54AC20/SDA-R	Rochester Electronics LLC	54AC20/SDA-R - Dual marked (M38510R75003SDA)
UHD503R/883	Rochester Electronics LLC	UHD503R/883 - Dual marked (5962-8855101CA)

C2 MARK Price and Stock

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Heinemann Electric Canada Co Ltd AM3R-C2-LC07DA-25-P Circuit Breaker - 3 Pole - 100A, 250VAC/80VDC - Series Trip - Black Handle with I/O ON/OFF Marking - 10-32 Threads 70 A Terminals.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	AM3R-C2-LC07DA-25-P					1 $142.82 10 $126.5 100 $114.55 1000 $114.55 10000 $114.55	Buy Now

C2 MARK Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
A3100W Abstract: No abstract text available Text: European PowerSemiconductor and Electronics Company Marketing Information FF 400 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1	Original	PDF
Untitled Abstract: No abstract text available Text: European PowerSemiconductor and Electronics Company Marketing Information FF 400 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1	Original	PDF
Untitled Abstract: No abstract text available Text: European PowerSemiconductor and Electronics Company Marketing Information FF 600 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1	Original	PDF
W001 Abstract: No abstract text available Text: European PowerSemiconductor and Electronics Company Marketing Information FF 400 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1	Original	PDF
Untitled Abstract: No abstract text available Text: European PowerSemiconductor and Electronics Company Marketing Information FF 600 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1	Original	PDF
Untitled Abstract: No abstract text available Text: European PowerSemiconductor and Electronics Company Marketing Information FF 400 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1	Original	PDF
POWERSEM Abstract: No abstract text available Text: European PowerSemiconductor and Electronics Company Marketing Information FF 600 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1	Original	PDF
Untitled Abstract: No abstract text available Text: European PowerSemiconductor and Electronics Company Marketing Information FF 600 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1	Original	PDF
FFB3904 Abstract: 1N916 FMB3904 MMPQ3904 SC70-6 SOIC-16 Text: FMB3904 FFB3904 E2 MMPQ3904 C2 B2 E1 C1 C1 E1 C2 B2 E3 E4 B4 B2 B1 pin #1 B1 E2 B3 E2 E1 pin #1 B1 SC70-6 SuperSOT-6 Mark: .1A Mark: .1A C1 SOIC-16 C2 C1 C3 C2 C4 C4 C3 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch.	Original	PDF	FMB3904 FFB3904 MMPQ3904 SC70-6 SOIC-16 1N916 FFB3904 FMB3904 1N916 MMPQ3904 SC70-6 SOIC-16
FFB2222A Abstract: FMB2222A MMPQ2222A SC70-6 SOIC-16 C150F Text: FMB2222A FFB2222A E2 MMPQ2222A C2 B2 E1 C1 C1 E1 C2 B1 B2 E3 E4 B4 B2 B1 pin #1 E2 B3 E2 E1 pin #1 B1 SC70-6 SuperSOT-6 Mark: .1P Mark: .1P C1 SOIC-16 C2 C1 C3 C2 C4 C4 C3 NPN Multi-Chip General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector	Original	PDF	FMB2222A FFB2222A MMPQ2222A SC70-6 SOIC-16 FFB2222A FMB2222A 200ns MMPQ2222A SC70-6 SOIC-16 C150F
KF412 Abstract: No abstract text available Text: European PowerSemiconductor and Electronics Company Marketing Information FF 800 R 12 KF4 55,2 11,85 M8 130 114 31,5 C2 E1 C1 E2 E2 E1 C1 G1 M4 28 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1 E2 C1 E2 20.03.1998 FF 800 R 12 KF 4 Höchstzulässige Werte / Maximum rated values	Original	PDF
FFB2907A Abstract: FMB2907A FMBT2907A MMPQ2907A SC70-6 SOIC-16 Text: FMB2907A FFB2907A E2 MMPQ2907A C2 B2 E1 C1 C1 E1 C2 B2 E3 E4 B4 B2 B1 pin #1 B1 E2 B3 E2 E1 pin #1 B1 SC70-6 SuperSOT-6 Mark: .2F Mark: .2F C1 SOIC-16 C2 C1 C3 C2 C4 C4 C3 PNP Multi-Chip General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring	Original	PDF	FMB2907A FFB2907A MMPQ2907A SC70-6 SOIC-16 FFB2907A FMBT2907A 200ns FMB2907A MMPQ2907A SC70-6 SOIC-16
IC1500 Abstract: No abstract text available Text: European PowerSemiconductor and Electronics Company Marketing Information FF 800 R 12 KF4 55,2 11,85 M8 130 114 31,5 C2 E1 C1 E2 E2 E1 C1 G1 M4 28 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1 E2 C1 E2 20.03.1998 FF 800 R 12 KF 4 Höchstzulässige Werte / Maximum rated values	Original	PDF
Untitled Abstract: No abstract text available Text: European PowerSemiconductor and Electronics Company Marketing Information FF 800 R 12 KF4 55,2 11,85 M8 130 114 31,5 C2 E1 C1 E2 E2 E1 C1 G1 M4 28 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1 E2 C1 E2 20.03.1998 FF 800 R 12 KF 4 Höchstzulässige Werte / Maximum rated values	Original	PDF

FF 150 R 1200 kf igbt Abstract: No abstract text available Text: European PowerSemiconductor and Electronics Company Marketing Information FF 800 R 12 KF4 55,2 11,85 M8 130 114 31,5 C2 E1 C1 E2 E2 E1 C1 G1 M4 28 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1 E2 C1 E2 20.03.1998 FF 800 R 12 KF 4 Höchstzulässige Werte / Maximum rated values	Original	PDF
IGBT FF 300 r12 Abstract: FF400R12KF4 Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 400 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2	Original	PDF	A15/97 IGBT FF 300 r12 FF400R12KF4
Untitled Abstract: No abstract text available Text: APTGF180DU60TG Dual common source NPT IGBT Power Module VCES = 600V IC = 180A @ Tc = 80°C Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies C2 C1 Q1 Q2 G1 G2 E1 E2 E NT C1 NT C2 G2 C2 E2 C1 C2 E E1 E2 NTC2 G1	Original	PDF	APTGF180DU60TG
FF600R12KF4 Abstract: FF 150 R 1200 kf igbt IC600A Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 600 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2	Original	PDF	A13/97 FF600R12KF4 FF 150 R 1200 kf igbt IC600A
Untitled Abstract: No abstract text available Text: APTGF50DU120TG Dual common source NPT IGBT Power Module VCES = 1200V IC = 50A @ Tc = 80°C Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies C2 C1 Q1 Q2 G1 G2 E1 E2 E NT C1 NT C2 G2 E2 C1 E C2 C2 E1 E2 NTC2 G1	Original	PDF	APTGF50DU120TG
IGBT FF 300 r12 Abstract: FF400R12KF4 Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 400 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2	Original	PDF	A15/97 IGBT FF 300 r12 FF400R12KF4
FD600 Abstract: 2m811 Text: European PowerSemiconductor and Electronics Company Marketing Information FD 600 / 1200 R 17 KF6 55,2 M8 11,85 screwing depth max. 16 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 7 2,5 deep 40 C2 16 18 53 G2 44 2,5 deep 57 E1 C2 C1 E2 E1	Original	PDF
G1 TRANSISTOR Abstract: FF 150 R 1200 kf igbt FF600R12KF4 Transistor g1 IGBT 600V 600A JE 800 transistor Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 600 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2	Original	PDF	A13/97 FF600R12KF4 G1 TRANSISTOR FF 150 R 1200 kf igbt FF600R12KF4 Transistor g1 IGBT 600V 600A JE 800 transistor
FF600R12KF4 Abstract: igbt ff 75 r Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 600 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2	Original	PDF	A13/97 FF600R12KF4 igbt ff 75 r
IGBT FF 300 r12 Abstract: FF400R12KF4 Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 400 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2	Original	PDF	A15/97 IGBT FF 300 r12 FF400R12KF4

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C2 MARK Search Results

C2 MARK Result Highlights (5)

C2 MARK Price and Stock

Heinemann Electric Canada Co Ltd AM3R-C2-LC07DA-25-P

C2 MARK Datasheets Context Search

A3100W

Untitled

Untitled

W001

Untitled

Untitled

POWERSEM

Untitled

FFB3904

FFB2222A

KF412

FFB2907A

IC1500

Untitled

FF 150 R 1200 kf igbt

IGBT FF 300 r12

Untitled

FF600R12KF4

Untitled

IGBT FF 300 r12

FD600

G1 TRANSISTOR

FF600R12KF4

IGBT FF 300 r12