C190AKT
Abstract: LTST-C170XKT ltst-c155 LTST-C190XKT LTST-C155XKT ckt-100
Text: Chip LED Lamp LTST- C150/170/190AKT Amber LTST- C150/170/190CKT AlGaAs Red LTST- C150/170/190EKT Red Orange LTST- C150/170/190GKT Green LTST- C150/170/190YKT Yellow LTST- C155GEKT Red Orange Dual Color LTST- C155GYKT Green-Yellow Dual Color Features Package in 8mm tape on 7" diameter reels.
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C150/170/190AKT
C150/170/190CKT
C150/170/190EKT
C150/170/190GKT
C150/170/190YKT
C155GEKT
C155GYKT
C190AKT
LTST-C170XKT
ltst-c155
LTST-C190XKT
LTST-C155XKT
ckt-100
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LTSTC150KAKT
Abstract: No abstract text available
Text: Ultra Bright AlInGaP Chip LED Lamp LTST- C150/170/190KAKT Red Orange LTST- C150/170/190KFKT Yellow Orange LTST- C150/170/190KRKT Super Red LTST- C150/170/190KSKT Yellow LTST- C150/170/190KYKT Amber Yellow Features High brightness AlInGaP material Package in 8mm tape on 7" diameter reels.
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C150/170/190KAKT
C150/170/190KFKT
C150/170/190KRKT
C150/170/190KSKT
C150/170/190KYKT
LTSTC150KAKT
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diode DB3 C531
Abstract: DB3 C531 diode db3 c432 MST9131 DB3 C502 mstar scaler DB3 C432 diode DB3 C535 rtl8201 schematic circuit RTL8201 Design
Text: 5 X A X X_FM X X_FM 2 1 +3VS H25 C266 C552 C704 C_NC C_NC C_NC H8 HOLES_S276D118 H16 HOLES_S276D118 H2 HOLES_S276D118 HOLES_S276D118 C150 C563 C78 C163 C_NC C_NC C_NC C_NC +1.8VS H22 H15 HOLES_S276D118 HOLES_S276D118 H3 HOLES_S276D118 H24 H12 HOLES_S276D118
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uPGA563
M741-1
M741-2
M741-3
M741-4
963L-1
963L-2
963L-3
diode DB3 C531
DB3 C531
diode db3 c432
MST9131
DB3 C502
mstar scaler
DB3 C432
diode DB3 C535
rtl8201 schematic circuit
RTL8201 Design
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S10601
Abstract: C10601 T10601 nec 3S4M S4004F1 2N2454 GE C150 s20600 S04070H S4003LS3
Text: SILICON CONTROLLED RECTIFIERS Item Number Part Number SeRs, VDRM 5 10 S04050H S04070H S04100H S20600 S2061 0 NCM400C 2N1604 NCR400B S4003LS1 C10802 g~g:g~ 15 20 C10804 C10804 S4003LS2 S4003LS3 3P4J 3P4J-Z CR3CM8 CR3CM8 ~~~;g~6 25 30 TXF4005 TYF4005 OR03E C150
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S04050H
S04070H
S04100H
S20600
S2061
NCM400C
2N1604
NCR400B
S4003LS1
C10802
S10601
C10601
T10601
nec 3S4M
S4004F1
2N2454
GE C150
S4003LS3
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IRF 80A
Abstract: C-150 irf 600v WF-2
Text: PD - 95195 IRGIB7B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.
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IRGIB7B60KDPbF
O-220AB
I840G
O-220AB
IRF 80A
C-150
irf 600v
WF-2
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C-150
Abstract: IRGS4B60KD1 IRGSL4B60KD1 40a 15v diode IGBT 600V 40A diode hexfet 40A 600V
Text: PD - 95616 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1 IRGSL4B60KD1 C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.
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IRGB4B60KD1PbF
IRGS4B60KD1
IRGSL4B60KD1
O-220
O-220
IRGB4B60KD1PbF
O-262
O-220AB.
C-150
IRGS4B60KD1
IRGSL4B60KD1
40a 15v diode
IGBT 600V 40A diode
hexfet 40A 600V
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10a 400v bipolar transistor
Abstract: C-150 IRGS10B60KD IRGSL10B60KD ultrafast diode 10a 400v diode 10a 400v
Text: PD - 94925 IRGB10B60KDPbF IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGB10B60KDPbF
IRGS10B60KD
IRGSL10B60KD
O-220AB
O-220CTOR
O-220AB.
10a 400v bipolar transistor
C-150
IRGS10B60KD
IRGSL10B60KD
ultrafast diode 10a 400v
diode 10a 400v
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5C transistor
Abstract: C100 C110 C120 C130 C150 C160 C180 C200 ZE1.5
Text: ZE1.5C . SILICON PLANAR POWER ZENER DIODES for use in stabilizing and clipping circuits with high power rating. The Zener voltages are graded according to the international E24 standard. Other tolerance and higher Zener voltages upon request. Absolute Maximum Ratings Ta = 25oC
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Zener 15c
Abstract: ZE1.5 5C transistor C100 C110 C120 C130 C150 C160 C180
Text: ZE1.5C . SILICON PLANAR POWER ZENER DIODES for use in stabilizing and clipping circuits with high power rating. The Zener voltages are graded according to the international E24 standard. Other tolerance and higher Zener voltages upon request. Absolute Maximum Ratings Ta = 25oC
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transistor C110
Abstract: C100 C110 C120 C130 C150 C160 C180 C200
Text: ZE2C … SILICON PLANAR POWER ZENER DIODES for use in stabilizing and clipping circuits with high power rating. The Zener voltages are graded according to the international E24 standard. Other tolerance and higher Zener voltages are upon request. Absolute Maximum Ratings Ta = 25oC
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C100
Abstract: C110 C120 C130 C150 C160 C180 C200
Text: ZE2C … SILICON PLANAR POWER ZENER DIODES for use in stabilizing and clipping circuits with high power rating. The Zener voltages are graded according to the international E24 standard. Other tolerance and higher Zener voltages are upon request. Absolute Maximum Ratings Ta = 25oC
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IRGP30B60
Abstract: C-150 IRGP30B60KD-E
Text: PD - 94388A IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.
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4388A
IRGP30B60KD-E
O-247AD
O-247AD
IRGP30B60
C-150
IRGP30B60KD-E
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Untitled
Abstract: No abstract text available
Text: BZD23 SERIES REGULATOR DIODES Glass passivated diodes in herm etically sealed axial leaded ID* glass envelopes. They are intended for use as voltage regulator and transient suppressor diodes in medium power regulation and transient suppression circuits. The series consists o f B Z D 2 3 -C 7 V 5 to B ZD -C 510 in the normalized E24 range.
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BZD23
OD-81
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'JE D bbS3^31 00Eb7E'l 7S7 « A P X BZT03 SERIES l REGULATOR DIODES Glass passivated diodes in hermetically sealed axial-leaded glass envelopes. They are intended for use as voltage regulator and transient suppressor diode in medium power regulation and transient suppres
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00Eb7E
BZT03
BZT03-C7V5
BZT03-C510
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BZW03
Abstract: d7v5 BZW03-C510 BZW03-C7V5 C100 C110 C120 C130 C150 C160
Text: • ^53^31 □ □ E b 7 T 3 bS2 H A P X N AMER PHI LIPS /DI SCRETE B ZW 03 SERIES b'IE D REGULATOR DIODES Glass passivated diodes in hermetically sealed axial-leaded glass envelopes. They are intended fo r use as voltage regulator and transient suppressor diode in medium power regulation and transient suppression
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BZW03
BZW03-C7V5
BZW03-C510
OD-64.
005b7Tfl
d7v5
C100
C110
C120
C130
C150
C160
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BZT03 27
Abstract: BZT03-C510 C82 diode BZT03 BZT03-C7V5 C100 C110 C120 C130 C150
Text: N AMER PH IL IPS/DISCRET E b'îE D bbS3^31 GGEbTET 7S7 • APX I BZT03 SERIES REGULATOR DIODES Glass passivated diodes in hermetically sealed axial-leaded glass envelopes. They are intended fo r use as voltage regulator and transient suppressor diode in medium power regulation and transient suppres
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BZT03
BZT03-C7V5
BZT03-C510
OD-57.
BZT03 27
C82 diode
C100
C110
C120
C130
C150
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BZT03 27
Abstract: C82 diode BZT03 BZT03-C510 BZT03-C7V5 C100 C110 C8V2 DIODE C3331
Text: N AMER PHILIPS/DISCRETE bbS3^31 b'îE D 00Eb7E'ì 757 • APX BZT03 SERIES I REGULATOR DIODES Glass passivated diodes in hermetically sealed axial-leaded glass envelopes. They are intended for use as voltage regulator and transient suppressor diode in medium power regulation and transient suppres
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00Eb7EcÃ
BZT03
BZT03-C7V5
BZT03-C510
OD-57.
QDSb733
BZT03 27
C82 diode
C100
C110
C8V2 DIODE
C3331
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c82 004
Abstract: C6V8 C510 BZD27 C82 diode BZD27-C3V6 BZD27-C7V5 C100 C110 C270
Text: Philips Semicpnductors bbSB^Bl QQ2b72Q S2T BBAPX Voltage regulator diodes 1 BZD27 series N AMER PHILIPS/DISCRETE DESCRIPTION Glass-passivated diodes in hermetically sealed leadless surface mounted implosion diode SMID glass envelopes. They are intended for use as voltage regulator and
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002b72G
BZD27
BZD27-C3V6
BZD27-C7V5
C7V5-C510
MSA020
bb53T31
002b72A
c82 004
C6V8
C510
C82 diode
C100
C110
C270
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Bz027
Abstract: C510 C82 diode BZD27 c82 004 BZD27-C3V6 BZD27-C7V5 C100 C270 C7V5
Text: Philips Sem icpnductors DD 2b 72D 52T BBAPX Product specification Voltage regulator diodes BZD27 series N AMER PHILIPS/DISCRETE DESCRIPTION Glass-passivated diodes in hermetically sealed leadless surlace mounted implosion diode SMID glass envelopes. They are intended
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QQ2b72G
BZD27
BZD27-C3V6
BZD27-C7V5
C7V5-C510
MSA020
0D2b72fl
S0D87.
Bz027
C510
C82 diode
c82 004
C100
C270
C7V5
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BZD27
Abstract: No abstract text available
Text: Philips Semlcpnductors HU b b 5 3 c131 QQ2b72D S2T HiAPX Voltage regulator diodes BZD27 series N AMER PHILIPS/DISCRETE DESCRIPTION Glass-passivated diodes in hermetically sealed leadless surface mounted implosion diode SMID glass envelopes. They are intended
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QQ2b72D
BZD27
BZD27-C3V6
BZD27-C7V5
C7V5-C510
bb53T31
Q02b757
bS3T31
DD2b72fl
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c82 004
Abstract: C4V7 517
Text: N AUER PHILIPS/DISCRETE b=JE P • bb53^31 002b?ll 517 P hilips S em BZD23 series Voltage regulator diodes DESCRIPTION Glass-passivated diodes in hermetically sealed axial-leaded implosion diode ID glass
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BZD23
BZD23-C3V6
BZD23-C7V5
C7V5-C510
bb53R31
2b71R
S0D81.
c82 004
C4V7 517
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BZD23
Abstract: c6v8 C510 bje 66 C82 diode BZD23-C3V6 BZD23-C7V5 C100 C110 C120
Text: N AUER PHILIPS/DISCRETE b=iE D ^ 5 3 ^ 3 1 DDEb?ll 517 Philips Semiconductors_ r IVM uwt Voltage regulator diodes DESCRIPTION Glass-passivated diodes in hermetically sealed axial-leaded implosion diode ID glass envelopes. They are intended for
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bb53131
BZD23
BZD23-C3V6
BZD23-C7V5
C7V5-C510
bb53T31
D02ti713
MGA020
c6v8
C510
bje 66
C82 diode
C100
C110
C120
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MGA018
Abstract: 305 5VL c7v5 C510 C82 diode c82 004 mga01 Philips MBB working of voltage regulator BZD23-C3V6
Text: N AMER PHILIPS/DISCRETE t'JE J> bb53T31 002b711 51? * A P X m Philips Sem iconductors Voltage regulator diodes DESCRIPTION Glass-passivated diodes in hermetically sealed axial-leaded implosion diode ID glass envelopes. They are intended for use as voltage regulator and
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BZD23
BZD23-C3V6
C7V5-C510
BZD23-C7V5
MQA020
MGA018
305 5VL
c7v5
C510
C82 diode
c82 004
mga01
Philips MBB
working of voltage regulator
BZD23-C3V6
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D0214AC
Abstract: D0-214AC BZG03-C33
Text: T emic Semiconductors Zener Diodes continued Electrical Characteristics and r^jT ^Znorn Ir atV8 Part Number V y n V J*A Z-Diodes PVmax = 3 W, in SMD Package, P z s m = 600 W, tp = 100 |is BZG03/C10 10 9.4 to 10.6 <4 50 < 10 7.5 Izr for Vzr : mA BZG03/C11
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BZG03/C10
BZG03/C15
BZG03/C16
BZG03/C18
BZG03/C20
BZG03/C22
BZG03/C24
BZG03/C27
BZG03/C30
BZG03/C33
D0214AC
D0-214AC
BZG03-C33
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