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    C103 M TRANSISTOR Search Results

    C103 M TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    C103 M TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c102 TRANSISTOR

    Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


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    PDF PTFA220121M PTFA220121M 12-watt PG-SON-10 c102 TRANSISTOR NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113

    c102 TRANSISTOR

    Abstract: LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217 PTFA220041M
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency


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    PDF PTFA220041M PTFA220041M PG-SON-10 c102 TRANSISTOR LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217

    TRANSISTOR C802

    Abstract: TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


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    PDF PTFA220121M PTFA220121M 12-watt PG-SON-10 TRANSISTOR C802 TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104

    TRANSISTOR C802

    Abstract: PTFA220121M LM7805 c SMD V4 MARKING p 4712 transistor c803 atc100a200jw
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


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    PDF PTFA220121M PTFA220121M 12-watt PG-SON-10 TRANSISTOR C802 LM7805 c SMD V4 MARKING p 4712 transistor c803 atc100a200jw

    c102 TRANSISTOR

    Abstract: tl113 c103 TRANSISTOR TRANSISTOR c104 NFM18PS105R0J3 c103 TRANSISTOR equivalent c104 TRANSISTOR PTFA220041M TL108 tl111
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency


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    PDF PTFA220041M PTFA220041M c102 TRANSISTOR tl113 c103 TRANSISTOR TRANSISTOR c104 NFM18PS105R0J3 c103 TRANSISTOR equivalent c104 TRANSISTOR TL108 tl111

    c102 TRANSISTOR

    Abstract: c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113
    Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200


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    PDF PTFA220081M PTFA220081M PG-SON-10 c102 TRANSISTOR c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113

    transistor c735

    Abstract: ATC100A120FW150XB TRANSISTOR c104 TL107 c103 m TRANSISTOR c103 TRANSISTOR TRANSISTOR C802 C735 transistor TRANSISTOR C107 TRANSISTOR C103
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency


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    PDF PTFA220041M PTFA220041M PG-SON-10 transistor c735 ATC100A120FW150XB TRANSISTOR c104 TL107 c103 m TRANSISTOR c103 TRANSISTOR TRANSISTOR C802 C735 transistor TRANSISTOR C107 TRANSISTOR C103

    TL272

    Abstract: tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O
    Text: PTFB201402FC Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty


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    PDF PTFB201402FC PTFB201402FC H-37248-4 17ubstances. TL272 tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O

    FR10300N0200J

    Abstract: UT-085 BLF645 2861002402 deltabond 152 UT-085C-15 transistor C103 c103 TRANSISTOR AN10953 C5750X7S2A106M
    Text: AN10953 BLF645 10 MHz to 600 MHz 120 W amplifier Rev. 1 — 3 March 2011 Application note Document information Info Content Keywords BLF645, broadband Abstract The BLF645 is a 100 W, 32 V LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications from HF to 1.4 GHz. This


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    PDF AN10953 BLF645 BLF645, FR10300N0200J UT-085 2861002402 deltabond 152 UT-085C-15 transistor C103 c103 TRANSISTOR AN10953 C5750X7S2A106M

    CQ1265RT

    Abstract: CQ0765RT cq1565rt cq1265rt schematic diagram cq0765 CQ0765RT circuit diagram CQ0765R cq0965rt cq1265 cq0565rt
    Text: www.fairchildsemi.com FSCQ-Series FSCQ0565RT / FSCQ0765RT / FSCQ0965RT / FSCQ1265RT FSCQ1465RT / FSCQ1565RT / FSCQ1565RP Green Mode Fairchild Power Switch FPSTM Features • Optimized for Quasi-Resonant Converter (QRC) • Advanced Burst-Mode Operation for under 1W Standby


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    PDF FSCQ0565RT FSCQ0765RT FSCQ0965RT FSCQ1265RT FSCQ1465RT FSCQ1565RT FSCQ1565RP 230VAC CQ1265RT CQ0765RT cq1565rt cq1265rt schematic diagram cq0765 CQ0765RT circuit diagram CQ0765R cq0965rt cq1265 cq0565rt

    CQ0765RT circuit diagram

    Abstract: CQ0765 10uf, 35v electrolytic capacitor cq1265rt schematic diagram cq0765rt VR201
    Text: FSCQ-Series FSCQ0565RT/FSCQ0765RT/FSCQ0965RT/FSCQ1265RT/ FSCQ1465RT/FSCQ1565RT/FSCQ1565RP Green Mode Fairchild Power Switch FPS Features Description • Optimized for Quasi-Resonant Converter (QRC) A Quasi-Resonant Converter (QRC) typically shows lower EMI and higher power conversion efficiency compared to conventional hard-switched converter with a


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    PDF Q0565RT/FSCQ0765RT/FSCQ0965RT/FSCQ1265RT/ FSCQ1465RT/FSCQ1565RT/FSCQ1565RP CQ0765RT circuit diagram CQ0765 10uf, 35v electrolytic capacitor cq1265rt schematic diagram cq0765rt VR201

    CQ1265RT

    Abstract: CQ0765RT circuit diagram cq1565rt cq0965rt CQ0765RT CQ1465RT cq1265rt schematic diagram CQ0765 CQ0765R cq1265
    Text: FSCQ-Series FSCQ0565RT/FSCQ0765RT/FSCQ0965RT/FSCQ1265RT/ FSCQ1465RT/FSCQ1565RT/FSCQ1565RP Green Mode Fairchild Power Switch FPS Features Description • Optimized for Quasi-Resonant Converter (QRC) A Quasi-Resonant Converter (QRC) typically shows lower EMI and higher power conversion efficiency compared to conventional hard-switched converter with a


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    PDF Q0565RT/FSCQ0765RT/FSCQ0965RT/FSCQ1265RT/ FSCQ1465RT/FSCQ1565RT/FSCQ1565RP CQ1265RT CQ0765RT circuit diagram cq1565rt cq0965rt CQ0765RT CQ1465RT cq1265rt schematic diagram CQ0765 CQ0765R cq1265

    CQ0765RT

    Abstract: CQ1265RT CQ1565RT cq0765rt TRANSISTOR CQ0765RT circuit diagram cq1265 cq0565rt CQ1465RT cq0965rt FSCQ0565RTYDTU
    Text: FSCQ-Series FSCQ0565RT/FSCQ0765RT/FSCQ0965RT/FSCQ1265RT/ FSCQ1465RT/FSCQ1565RT/FSCQ1565RP Green Mode Fairchild Power Switch FPS Features Description • Optimized for Quasi-Resonant Converter (QRC) A Quasi-Resonant Converter (QRC) typically shows lower EMI and higher power conversion efficiency compared to conventional hard-switched converter with a


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    PDF Q0565RT/FSCQ0765RT/FSCQ0965RT/FSCQ1265RT/ FSCQ1465RT/FSCQ1565RT/FSCQ1565RP CQ0765RT CQ1265RT CQ1565RT cq0765rt TRANSISTOR CQ0765RT circuit diagram cq1265 cq0565rt CQ1465RT cq0965rt FSCQ0565RTYDTU

    hitachi mpu guide

    Abstract: c103 TRANSISTOR Combo Driver spwm TRANSISTOR c104 "Hitachi, Ltd., 1997" Hitachi DSA00173
    Text: HA13568T CD-ROM Combo Driver ADE-207-247E Z 6th Edition May 1, 1998 Description The HA13568T is combination of Spindle, Forcus, Tracking, Slide, Tray designed for CD-ROM and have following function and features. Features • • • • • • • • 1.5 A sensorless spindle driver


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    PDF HA13568T ADE-207-247E HA13568T D-85622 hitachi mpu guide c103 TRANSISTOR Combo Driver spwm TRANSISTOR c104 "Hitachi, Ltd., 1997" Hitachi DSA00173

    Combo Driver

    Abstract: TRANSISTOR c104 C101 C102 C103 C104 C105 C109 HA13568AT R101
    Text: HA13568AT CD-ROM Combo Driver ADE-207-261A Z 2nd Edition December 1998 Description The HA13568AT is combination of Spindle, Forcus, Tracking, Slide, Tray designed for CD-ROM and have following functions and features. Features • • • • • • •


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    PDF HA13568AT ADE-207-261A HA13568AT Combo Driver TRANSISTOR c104 C101 C102 C103 C104 C105 C109 R101

    c103 TRANSISTOR

    Abstract: Combo Driver TRANSISTOR c104 transistor c114 diagrams for C114 transistor Hitachi DSA00173 TRRP
    Text: HA13568AT/HA13568R CD-ROM Combo Driver ADE-207-261 Z 1st Edition July 1998 Description The HA13568AT and HA13568R are combination of Spindle, Focus, Tracking, Slide, Tray designed for CD-ROM and have following functions and features. Features • • •


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    PDF HA13568AT/HA13568R ADE-207-261 HA13568AT HA13568R HA13568AT VFC97 D-85622 c103 TRANSISTOR Combo Driver TRANSISTOR c104 transistor c114 diagrams for C114 transistor Hitachi DSA00173 TRRP

    c103 TRANSISTOR

    Abstract: Combo Driver TRANSISTOR c104 ha13558afh cel hitachi ha13558a Hitachi DSA00173 Hitachi Capacitor Guide ha13558
    Text: HA13558AFH CD-ROM Combo Driver ADE-207-235C Z 4th Edition November 1, 1997 Description The HA13558AFH is combination of Spindle, Forcus, Tracking, Slider, Tray designed for CD-ROM and have following function and features. Functions • • • • • •


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    PDF HA13558AFH ADE-207-235C HA13558AFH D-85622 c103 TRANSISTOR Combo Driver TRANSISTOR c104 cel hitachi ha13558a Hitachi DSA00173 Hitachi Capacitor Guide ha13558

    c103 m TRANSISTOR

    Abstract: c103 TRANSISTOR equivalent C102 M transistor c103 npn TRANSISTOR C103 c103 transistor c102 TRANSISTOR
    Text: -^outran Ä¥Ä L©(i Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING C H IP N U M B E R PIMP EPITAXIAL PLANAR POWER TRANSISTOR* * (FORMERLY 69 CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver'' also available)


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    PDF 203mm) JAN2N3740, JAN2N3741, SDT69601 SDT69613, SDT69501 SDT69513 500mA, C-102 C-103 c103 m TRANSISTOR c103 TRANSISTOR equivalent C102 M transistor c103 npn TRANSISTOR C103 c103 transistor c102 TRANSISTOR

    c103 TRANSISTOR equivalent

    Abstract: C102 M transistor Solitron Devices c103 TRANSISTOR c103 npn
    Text: 8368602 SOLITRON DEVICES INC 95D 02 89 3 1 fl3hfibUd OaOEÖTB D 0 I rJpwMËeon • MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP N U M BER Devices. Inc. PIMP EPITAXIAL PLANAR POWER TRANSISTOR* * FORMERLY 69 CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum


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    PDF 203mm) C-102 C-103 c103 TRANSISTOR equivalent C102 M transistor Solitron Devices c103 TRANSISTOR c103 npn

    S15K

    Abstract: 251C Z51C 3N50 sbsb 2sc1576
    Text: SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR IS61BŒ O ¿'/B o urn o Pow er R e g u l a t o r a n d H i g h V o l t a g e INDUSTRIAL APPLICATIONS Sw itch in g A pp li c a t i o n s •  StŒ T -f : tiifOWE.jPi&'s* vc b o = 4 5 0 ; V c E e a t = l-SV Max.


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    PDF 2sc1576 0X20X2W 10X10X2Â S15K 251C Z51C 3N50 sbsb 2sc1576

    c103 TRANSISTOR equivalent

    Abstract: TRANSISTOR c105 c105 TRANSISTOR MK1210 transistor c107 m c103 m TRANSISTOR C102 M transistor c107 TRANSISTOR equivalent c102 TRANSISTOR triac C105
    Text: 1 Introduction Increasingly power supplies used in applications such as home appliance, office automation,communications and industrial area need to operate on the main AC line 100V and 200V as products are manufactured for global markets. Traditionally power supplies have been designed to operate on either 100V


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    PDF 200VAC 2606C 95-220V 200uA c103 TRANSISTOR equivalent TRANSISTOR c105 c105 TRANSISTOR MK1210 transistor c107 m c103 m TRANSISTOR C102 M transistor c107 TRANSISTOR equivalent c102 TRANSISTOR triac C105

    TRANSISTOR ASY 0.25 W

    Abstract: c103 a ge
    Text: PD - 5.066 International I R Rectifier GA200SA60U INSULATED GATE BIPOLAR TRANSISTOR Ultra-Fast Speed IGBT Features • U ltra F a st: O p tim ize d fo r m in im um satu ra tion vo lta g e a n d op e ra tin g fre q u e n cie s up to 4 0 kH z in hard sw itch ing , > 2 0 0 kH z in re so n a n t m ode


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    PDF GA200SA60U C-102 C-103 TRANSISTOR ASY 0.25 W c103 a ge

    transistor c104 M 123

    Abstract: c103 a ge
    Text: PD - 9.794 bitem ational SqrIR ectifier IRGBC30FD2 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to


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    PDF IRGBC30FD2 10kHz) C-107 5545E TQ-220AB C-108 554S2 transistor c104 M 123 c103 a ge

    IRFR9220

    Abstract: irfu9220 irfu9222 sis 968 dc-dc 522B DNMC IRFR9222 OL-10S 46HA .46HA
    Text: HE D | 4BS5452 0005340 □ | Data Sheet No. PD-9.522B INTERNATIONAL RECTIFIER T-37-25 INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dvAdt RATED HEXFET TRANSISTORS IRFR9SSO IRFR92S2 IRFU9SSO IRFU0222 P-CHANNEL Product Summary -200 Volt, 1.5 Ohm HEXFET


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    PDF T-37-25 C-103 IRFR9220, IRFR9222, IRFU9220, IRFU9222 IRFR9220TR C-104 IRFR9220 irfu9220 sis 968 dc-dc 522B DNMC IRFR9222 OL-10S 46HA .46HA