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    C 3725 TRANSISTOR Search Results

    C 3725 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    C 3725 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    LTC3706

    Abstract: No abstract text available
    Text: LTC3725 Single-Switch Forward Controller and Gate Driver FEATURES • ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LTC 3725 is a controller for a single-switch forward converter and includes an on-chip gate driver. High Speed Gate Driver for Forward Converter


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    LTC3725 10-Lead LTC3725 LTC370 LTC3706 LT3781 LT3804 LTC3901 LTC3900, 3725fa LTC3706 PDF

    lt3725

    Abstract: ic regulator 48v 30a 500w Full bridge transformer FDC2512 HAT2165 LTC3706 LTC3725 PA0815 PA1294 Si7450DP
    Text: LTC3725 Single-Switch Forward Controller and Gate Driver U FEATURES DESCRIPTIO • The LTC 3725 is a controller for a single-switch forward converter and includes an on-chip gate driver. ■ ■ ■ ■ ■ ■ ■ ■ High Speed Gate Driver for Forward Converter


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    LTC3725 10-Lead LTC3725 LTC3706 LTC3706 LT3781 LT3804 LTC3901 LTC3900, 3725f lt3725 ic regulator 48v 30a 500w Full bridge transformer FDC2512 HAT2165 PA0815 PA1294 Si7450DP PDF

    gate drive pulse transformer Gate Drive Characteristics Requirements

    Abstract: 500w Full bridge transformer 500w forward lt3725 1W zener diode, 91V regulation using optoisolator feedback 1,5uf 63v FDC2512 optoisolator high voltage LTC3725
    Text: LTC3725 Single-Switch Forward Controller and Gate Driver U FEATURES DESCRIPTIO • The LTC 3725 is a controller for a single-switch forward converter and includes an on-chip gate driver. ■ ■ ■ ■ ■ ■ ■ ■ High Speed Gate Driver for Forward Converter


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    LTC3725 10-Lead LTC3725 LTC3706 LTC3706 LT3781 LT3804 LTC3901 LTC3900, 3725fa gate drive pulse transformer Gate Drive Characteristics Requirements 500w Full bridge transformer 500w forward lt3725 1W zener diode, 91V regulation using optoisolator feedback 1,5uf 63v FDC2512 optoisolator high voltage PDF

    TRANSISTOR 7912A

    Abstract: TRANSISTOR 7915A 2.2uf/hall smda 4 pin
    Text: IP120 SERIES IP7900 SERIES LM120 SERIES LM7900 SERIES 1.5 AMP NEGATIVE VOLTAGE REGULATOR 1 1 2 2 3 FEATURES 3 Pin 1 – Ground Pin 2 – VOUT Case – VIN K Package – TO–3 Pin 1 – Ground Pin 2 – VOUT Case – VIN R Package – TO–66 • OUTPUT VOLTAGE OF -5V, -12V and -15V


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    IP120 IP7900 LM120 LM7900 SMD-05 TRANSISTOR 7912A TRANSISTOR 7915A 2.2uf/hall smda 4 pin PDF

    TRANSISTOR 7915A

    Abstract: TRANSISTOR 7912A 7915a LM7915 to-3 7912a 7915 fixed voltage regulator to-3 7905a 7915 TO-3 Transistor LM 7912 LM7915 SMD PACK
    Text: IP120 SERIES IP7900 SERIES LM120 SERIES LM7900 SERIES 1.5 AMP NEGATIVE VOLTAGE REGULATOR 1 1 2 2 3 FEATURES 3 Pin 1 – Ground Pin 2 – VOUT Case – VIN K Package – TO–3 Pin 1 – Ground Pin 2 – VOUT Case – VIN R Package – TO–66 • OUTPUT VOLTAGE OF -5V, -12V and -15V


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    IP120 IP7900 LM120 LM7900 SMD-05 TRANSISTOR 7915A TRANSISTOR 7912A 7915a LM7915 to-3 7912a 7915 fixed voltage regulator to-3 7905a 7915 TO-3 Transistor LM 7912 LM7915 SMD PACK PDF

    c 3725 transistor

    Abstract: 2N3725 3725 transistor 3725
    Text: 2N 3725 SILICON PLANAR NPN HIG H -VO LTAG E, H IG H -CU R REN T SWITCH The 2N 3725 is a silicon planar epitaxial transistor in T O -3 9 metal case. It is a high-voltage, high-current switch used for memory applications requiring breakdown voltages up to 50V


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    G-3155 c 3725 transistor 2N3725 3725 transistor 3725 PDF

    MHQ3725

    Abstract: D2072 MHQ3724
    Text: MOTOROLA SC XSTRS/R F 12E D | QUAD DUAL-IN LINE NPN HERMETIC SILICON MEMORY DRIVER TRANSISTORS . . . designed for high-current, high-speed switching, ferrite core and plated w ire m em ory drivers, and M O S translator applications. t3t.75S4 00flt>S7ä T |


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    00flt 2N3724, 2N3725 O-116 il-Std-750, MHQ3725 D2072 MHQ3724 PDF

    2N3724

    Abstract: 2N3725 2n3725a transistor 2N3725
    Text: Datasheet Central' 2N3724 2N3725 2N3725A Semiconductor Corp. NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 2 N 3 7 2 4 , 2 N 3 7 2 5 , 2 N 3 7 2 5 A types are Silicon NPN Planar Epitaxial Transistors


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    2N3724 2N3725 2N3725A 2N3724, 2N3725, 2N3725A 2N3724 Dissipation00MHz transistor 2N3725 PDF

    3725A

    Abstract: MMPQ3725A
    Text: MOTORCLA SC XSTRS/R F 1SE D I D [ J f lt 0 1 2 ^ I 'f iß -lS MMPQ3725, A CASE 751B-03, STYLE 1 SO-16 M A X IM U M RATINGS M M PQ 3725A Unit 40 50 V dc 60 70 Vdc Sym bol M M PQ 3725 Collector-Emitter Voltage v CEO Coiiector-Emitter V oltage VCES R ating V EB


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    MMPQ3725, 751B-03, SO-16 3725A MMPQ3725A PDF

    IC 4047

    Abstract: N2219 ic 4046 bsw830 BSW82 N 2222 N2222A BSW83 2N3301 2N3302
    Text: NPN Silicon Transistors NPN Silicon Epitaxial Planar Transistors lc = 5C 0mA) in TO-18 and TO-39 (~ T O - 5 ) metal cases for high speed switching Type Characteristics @ Tam b= 25°C Maximum Ratings f" l„ Tam b— ff 2 5 °C Tease— V CE = 10 V = 10 mA


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    BSW83 2N3301 2N3302 IC 4047 N2219 ic 4046 bsw830 BSW82 N 2222 N2222A 2N3301 2N3302 PDF

    MPQ3725

    Abstract: MP03725 MPQ3546 MPQ3725A MHQ3546
    Text: MPQ3546 SILICON For Specifications, See MHQ3546 Data. MPQ3725 (silicon) MPQ3725A NPN SILICON A N N U L A R Q UAD CO RE D R IV E R TRANSISTO RS Q U AD D UAL-IN-LINE . . . designed for medium-current, high speed switching and driver applications. NPN SILICON


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    MPQ3546 MHQ3546 MPQ3725 MPQ3725A MPQ3725 MPQ3725A MP03725 MPQ3546 PDF

    BSy38

    Abstract: Motorola* 2n708 2N1711 MOTOROLA DH3467CD 2N706 BSY39 SP3725 SP3725QDB tch98 2N706A
    Text: Discrete Devices Transistors Cont. Ultra High-Speed Logic Switches Electrical Characteristics @ 25° C Maxim um Ratings M Vcb Volts . NPN PD Ambient £1 Type VEB Volts h fe V c E (S a t) @ I q /I b @ ic Min/Max mA Volts m A/m A ft MHz Cob PF M ax tON ns


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    2N706 2N706A 2N706B 2N706C 2N708 2N743 2N743A 2N744 16NPN BSY51 BSy38 Motorola* 2n708 2N1711 MOTOROLA DH3467CD BSY39 SP3725 SP3725QDB tch98 PDF

    2N3724A

    Abstract: n37 transistor n3714 3724A 2N3724 2N3725A
    Text: TYPES 2N3724, 2N3724A, 2N3725. 2N3725A N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L-S 7 3 1 0 0 8 1 , JU N E 1 9 6 7 - R E V IS E D M A R C H 1973 FA ST, H IG H -VO LTAG E, HIGH-CURRENT C O R E D R IV ER S • h FE Guaranteed from 10 mA to 1.5 A •


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    2N3724, 2N3724A, 2N3725. 2N3725A 2N3725A) 725/i 2T1372E 2N3724A n37 transistor n3714 3724A 2N3724 PDF

    2N2270 equivalent

    Abstract: 2N2317 DH3725CN Q2T3725 motorola 2N2270 to-18 2N2008 2N1711 MOTOROLA 2N1990 MOTOROLA bfy76 2N2102
    Text: Transistors Cont. Discrete Devices Genera Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N1990 2IM2008 VCB Volts VCE Volts NPN 600 100 _ NPN 175 110 VEB Volts 3 8 H f e @ 'C VçE(Sat) @ lc / 'B


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    2N1990 2N2008 2N2102 2N2102A 2N2192 2N2192A 2N2192B 2N2193 150/15NPN BSY51 2N2270 equivalent 2N2317 DH3725CN Q2T3725 motorola 2N2270 to-18 2N1711 MOTOROLA 2N1990 MOTOROLA bfy76 PDF

    2n2219 equivalent

    Abstract: BFY39 2N2219A BSX45 2N2905a equivalent BSY39 N3343 2N1132B SP3725QDB equivalent 2N2219 BSX88
    Text: Discrete Devices Transistors Cont. Medium Current, High-Speed Amplifiers Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW VCB VCE VEB Volts Volts Volts hfe VcE(Sat) @ Ic/lß @ ic Min/Max mA Volts mA/mA ft MHz Min Cob pF Max


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    2N721A 2N722A 2N1132A 2N1132B 2N2217 2N2218 2N2218A 500/5NPN BSY51 2n2219 equivalent BFY39 2N2219A BSX45 2N2905a equivalent BSY39 N3343 SP3725QDB equivalent 2N2219 BSX88 PDF

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-116 PACKAGE T O -116 14 PIN C E R A M IC D IP yp i* T O -116 w 11 f VcEO sus VOLTS Ic (m ax) AM PS hfE @ V ^ ce m in/m ax @ m A /V VcE(sat) @ Ic^B V @ m A /inA C <£P P (M H z) 2N 6987 60 .6 100/300@ 150/10


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    O-116 500/l PDF

    2N1711 MOTOROLA

    Abstract: DH3467CD equivalent 2N2219 2N2219A BSX45 bsy38 BSY39 SP3725 SP2222AF bsx46 equivalent SP2484F
    Text: Transistors Cont. Discrete Devices Space Saving Devices Electrical Characteristics @ 25° C Maxim um Ratings Ambient P q Type Polarity One Both Side Sides mW mW VCE<Sat) @ Ic / lß H f e ic Vcb Volts VCE Volts VEB Volts Min/Max mA Volts m A/m A Frequency


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    SP918AF SP918BF SP2222AF SP2223AF SP2484F SP2907AF SP2946F BSY51 2N2218 BSY52 2N1711 MOTOROLA DH3467CD equivalent 2N2219 2N2219A BSX45 bsy38 BSY39 SP3725 bsx46 equivalent PDF

    BSX39

    Abstract: BSX29 BSX26 IC 4013 transistor BSX26 2n3013 BSX28 bsx20 bsx39
    Text: nrz SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL Ä 7 # K ÄÖ 8 IILI O T® !M 0(gS SMALL SIGNAL TRANSISTORS NPN TRANSISTORS FOR FAST AND ULTRA FAST SWITCHING vCEO hpE min/max C? Type (mA (V) vCE(sat) max ICrtB (V) (mA) »T min (MHz) 0.25 0.4 30/3 0.7 0.6 10/1


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    bsx28 bsx20 2369a bsx26 2n3014 bsx39 2n4013 BSX29 IC 4013 transistor BSX26 2n3013 bsx20 bsx39 PDF

    MD6100

    Abstract: PNP UHF transistor MD2219A MD2369 MD2369A MD2369B MD2905A MD5179 MD7000 MD7001
    Text: Dual Transistors TO-78 Case Continued vCEO (V) @«c (mA) =E e vCE (V) <0 MD7003B MD8001 MD8002 MD8003 VCBO (V) LU MD7000 MD7001 MD7002 MD7002A MD7002B MD7003 MD7003A •c (mA) MD982 MD2219A MD2369 MD2369A MD2369B MD2905A MD5179 DESCRIPTION > TYPE NO. (V)


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    MD982 MD2219A MD2369 MD2369A MD2369B MD2905A MD5179 MD7000 MD7003A MD7003B MD6100 PNP UHF transistor MD7001 PDF

    Untitled

    Abstract: No abstract text available
    Text: Dual Transistors TO-78 Case Continued TYPE NO. DESCRIPTION •c VCBO v CEO (mA) (V) (V) :E @ lc e v CE (mA) (V) MATCHING VCE(SAT) @ >C (mA) (V) (MHz) h FE Vb e MAX *TYP MIN *r MAX MIN MIN MIN MAX % (mV) MD982 PNP AMPL/SWITCH 600 60 50 35 . 10 10 0.5 150


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    MD982 MD2219A MD2369 MD2369A MD2369B MD8002 MD8003 D3250 MD3251 D7007 PDF

    equivalent transistor 2N1711

    Abstract: MOTOROLA 2n2102 TRANSISTOR DH3725 transistor bfy39 SP3725 NPN transistor 2n2222A plastic package 2N2708 2N784A Motorola* 2n708 2N706A
    Text: Discrete Devices Transistors Cont. Ultra High-Speed Logic Switches Electrical Characteristics @ 25° C Maxim um Ratings M Vcb Volts . NPN PD Ambient £1 Type VEB Volts h fe V c E (S a t) @ I q /I b @ ic Min/Max mA Volts m A/m A ft MHz Cob PF M ax tON ns


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    2N706 2N706A 2N706B 2N706C 2N708 2N743 2N743A 2N744 BT2946 2N2946 equivalent transistor 2N1711 MOTOROLA 2n2102 TRANSISTOR DH3725 transistor bfy39 SP3725 NPN transistor 2n2222A plastic package 2N2708 2N784A Motorola* 2n708 PDF

    2N3725

    Abstract: 2N3724 NSQ3724 NSQ3725 dc iris driver
    Text: NSQ3724 NSQ3725 QUAD DUAL - IN LINE NPN HERMETIC SILICON MEMORY DRIVER TRANSISTORS • • • • FAST SWITCHING TIMES LOW COLLECTOR-EMMITTER SATURATION VOLTAGE DC CURRENT GAIN SPECIFIED - 100 m A dc TO 1.0 Adc TO-116 CERAMIC PACKAGE MAXIMUM RATINGS SY M B O L


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    NSQ3724 NSQ3725 O-116 NSQ3725 Junc10 300jis, 2N3725 2N3724 dc iris driver PDF

    BGY17

    Abstract: No abstract text available
    Text: BGY17 SILICON PLANAR NPN QUAD, H IG H -C U R R EN T SWITCH The BGY 17 is an assembly of fo u r isolated silicon planar epitaxial NPN transistors* in Jedec T O -1 16 1 4 -lead dual in -line plastic package, specially designed fo r m edium -current, high­ speed switching and driver applications.


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    BGY17 BGY17 PDF

    VP2410

    Abstract: vP2410B
    Text: SILICONIX INC 1ÔE D 0254735 0014127 1 CY'Siliconix VP2410 SE R IE S JLJm in c o rp o ra te d P-Channel Enhancem ent-M ode M O S Transistors PRODUCT SUMMARY PART NUMBER TO-92 V BR DSS fDS(ON) (Í1 ) (V) Id (A) PAC KA G E VP2410L -2 4 0 10 -0.18 TO-92 VP241QB


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    VP2410 VP2410L VP241QB O-205AF vP2410B PDF