byw 150
Abstract: diode byw 81 200 diode BYW 66 BYW29 JESD22-B102D J-STD-002B
Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time ITO-220AC TO-220AC • Low switching losses, high efficiency • Low forward voltage drop 2 BYW29 Series
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ITO-220AC
O-220AC
BYW29
J-STD-020C,
O-263AB
ITO-220AC
2002/95/EC
2002/96/EC
BYWF29
byw 150
diode byw 81 200
diode BYW 66
JESD22-B102D
J-STD-002B
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Untitled
Abstract: No abstract text available
Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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Original
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PDF
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J-STD-020,
O-263AB
O-220AC
ITO-220AC
2002/95/EC
2002/96/EC
ITO-220AC
O-220AC
BYW29
BYWF29
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diode BYW 66
Abstract: BYW29 JESD22-B102 J-STD-002 BYW29-200-E3 byw 91-4
Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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Original
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PDF
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J-STD-020,
O-263AB
O-220AC
ITO-220AC
2002/95/EC
2002/96/EC
ITO-220AC
O-220AC
BYW29
BYWF29
diode BYW 66
JESD22-B102
J-STD-002
BYW29-200-E3
byw 91-4
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byw 91-4
Abstract: BYW series byw29
Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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Original
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PDF
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O-220AC
ITO-220AC
BYW29
BYWF29
O-263AB
J-STD-020C,
ITO-220AC
2002/95/EC
byw 91-4
BYW series
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Untitled
Abstract: No abstract text available
Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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Original
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PDF
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O-220AC
ITO-220AC
BYW29
BYWF29
O-263AB
J-STD-020,
ITO-220AC
2002/95/EC
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byw 04-15
Abstract: BYW29 JESD22-B102D J-STD-002B byw 91-4
Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction ITO-220AC TO-220AC • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop 2 BYW29 Series
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Original
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PDF
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ITO-220AC
O-220AC
BYW29
O-263AB
BYWF29
O-263AB
BYWB29
2002/95/EC
2002/96/EC
J-STD-020C
byw 04-15
JESD22-B102D
J-STD-002B
byw 91-4
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BYW295
Abstract: No abstract text available
Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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Original
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PDF
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O-220AC
ITO-220AC
BYW29
BYWF29
O-263AB
J-STD-020,
ITO-220AC
2002/95/EC
BYW295
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BYW29
Abstract: JESD22-B102 J-STD-002
Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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Original
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PDF
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J-STD-020,
O-263AB
O-220AC
ITO-220AC
2002/95/EC
2002/96/EC
ITO-220AC
O-220AC
BYW29
BYWF29
JESD22-B102
J-STD-002
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byw 150
Abstract: No abstract text available
Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time ITO-220AC TO-220AC • Low switching losses, high efficiency • Low forward voltage drop 2 BYW29 Series
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Original
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PDF
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O-220AC
ITO-220AC
J-STD-020C,
O-263AB
O-220AC
ITO-220AC
2002/95/EC
2002/96/EC
O-220AC,
ITO-220AC,
byw 150
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BYW 26
Abstract: AMIC "marking" Transistor circuits Transistor 9850
Text: BYW 98-50 →200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES VERY LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIMES HIGH SURGE CURRENT THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF trr AND IRM AT 100°C
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Untitled
Abstract: No abstract text available
Text: BYW 98-50 →200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES VERY LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIMES HIGH SURGE CURRENT THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF trr AND IRM AT 100°C
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DO-201AD
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RECTIFIER 92-50
Abstract: diodes byw 92 dt 9250 sid microelectronics
Text: BYW 92-50 → 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES VERY LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIMES HIGH SURGE CURRENT AND AVALANCHE CAPABILITY THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF trr AND IRM AT100°C
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AT100
RECTIFIER 92-50
diodes byw 92
dt 9250
sid microelectronics
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byw 150
Abstract: BYW 200 BYV 35 77150 BYV 77 diodes byw 51 100 Thomson-CSF rectifier BYW 29 500 BYW 98/100 BYV+80+-+200
Text: high efficiency fast recovery rectifier diodes diodes de redressement rapide à haut rendement Types •o VRRM ■f s m 10 m s A (V) (A) 3 A / Tcase = 85°C BYW BYW BYW BYW Tj = 150°C 9 8 - 50 98 -100 98 -150 98 -200 7 A / Tcase = 130°C BYW BYW BYW BYW
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CB-197)
ICB-22
CB-19)
byw 150
BYW 200
BYV 35
77150
BYV 77
diodes byw 51 100
Thomson-CSF rectifier
BYW 29 500
BYW 98/100
BYV+80+-+200
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46R2S
Abstract: r2s30 FR76 BYW 26 Thomson-CSF plastic diodes FR79 36R2S diodes byw CASA10 R83HZ
Text: controlled avalanche rectifier diodes diodes de redressement à avalanche contrôlée Types 3A •o VRRM A (V) / Tam|) = 80 °C BYW BYW BYW BYW 18- 400 18- 600 18- 800 18-1000 3 Tj = 150°C 400 600 800 1000 PRSM vF ^ V(BR)R @ Ir = 100mA 10 fiS JT. (V) (V)
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300A2s
CB-257)
10-32UNF"
CB-33)
R2S-50
R2S-30
R2S-70
46R2S
r2s30
FR76
BYW 26
Thomson-CSF plastic diodes
FR79
36R2S
diodes byw
CASA10
R83HZ
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P6004R
Abstract: BYW 62 s95A P4004 214200 BYW 200 P1004R BYW17/100
Text: DIODES DE REDRESSEMENT rectifier diodes V RWM 'o 'f TYPES A 1 ,2 5 A F F F F F F F no nxy nxy no BY BY BY BY BY t am b = 5 0 ° C 251 252 253 254 255 BYW 17BYW 17 BYW 17 BYW 17BYW 17BYW 17BYW 17- 100 200 400 600 800 1000 1200 3 A / 1N 1N IN 1N 1N IN 1N (R)
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P4004,
P6004R
BYW 62
s95A
P4004
214200
BYW 200
P1004R
BYW17/100
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byw 15200
Abstract: BY218-400 BYX61 diodes byw 16400 BY218-600 GR606 BY218-200 1N3881 diodes byw GR806R
Text: DIODES DE REDRESSEMENT RAPIDE , fast recovery rectifier diodes TY PES 2A 3333 xy xy xy xy * BY * BY * BY * BY / 296 297 298 299 2A 3333 xy xy xy xy • BY •B Y •B Y • BY tam b = 5 0 °C / ta mb — 50°C 3A / *BYW •BYW •BYW •BYW • BYW 14- 100
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1N3881,
BYX61-
BYX61
byw 15200
BY218-400
diodes byw 16400
BY218-600
GR606
BY218-200
1N3881
diodes byw
GR806R
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Diode LT 9250
Abstract: diode BYW 92 LT 9250 diode lt 0236 5 amp diode byw 92-200 diode BYW 92-200 diodes byw 92 diodes byw diode BYW 19
Text: S G S- TH OM SO N O STC D 1 7121237 00G2252 BYW 92-50^200, R BYW 92-150 A f (R) T H O M S O N -C S F D M S IO N SEM ICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES A H A U T RENDEMENT 59C 02252 HIGH EFFICIENCY
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00G2252
CB-425)
CB-262)
CB-262
CB-19)
CB-428)
CB-244
Diode LT 9250
diode BYW 92
LT 9250
diode lt 0236
5 amp diode byw 92-200
diode BYW 92-200
diodes byw 92
diodes byw
diode BYW 19
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BYW29
Abstract: bvw29 BYW29-150M T0220SM 150V-200V
Text: 613 3107 bOE D SENELAB DQGQSSM 2TB « S I I L B - PLC T 3 - 1 7 SEMELAB BYW29 - 50M B Y W 29- 100M BYW 29-150M BYW 29-200M MECHANICAL DATA HERMETICALLY SEALED FAST RECOVERY SILICON RECTIFIER FOR HI-REL APPLICATIONS Dimensions in mm FEATURES • HERMETIC TO 220 M ETAL OR
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PDF
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BYW29
BYW29-
BYW29-150M
BYW29
T0220M
T0220
T0220SM
bvw29
150V-200V
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IN4001GP
Abstract: IN4007 IN5399GP IN5399 IN4001 Fagor GP IN-4001 IN5624 IN5627GP P600M
Text: FAGOR ^ Rectifier Diodes - Quick Guide CURRENT VOLTAGE CASE Plastic IN 4001 GP to IN 4007 GP 1.0 A @ 7 5 °C 50 -s-1000 V DO-41 GP 10 A to GP 10 M 1.0 A @ 55°C 50 -s-1000 V DO-41 BYW 27-50 to BYW 27-1000 1,0 A @ 7 0 °C 50 -¡-1000 V D O -15 IN 5391 GP to
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PDF
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P600M
-s-1000
DO-41
DO-41
DO-201
IN4001GP
IN4007
IN5399GP
IN5399
IN4001
Fagor GP
IN-4001
IN5624
IN5627GP
P600M
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diode BYW 92
Abstract: 5 amp diode byw 92 diode BYW 92-200 SA 9259 diode puissance 30 amp BYW 90 diode BYW 66 diodes byw 5 amp diode byw 92-200 rms p2f
Text: S G S- TH OM SO N O STC T H O M D 1 7121237 00G2252 BYW 92-50^200, R BYW 92-150 A f (R) S O N - C S F D M S IO N SEM ICONDUCTEURS DISCRETS SUPERSWITCH H IG H E F F IC IE N C Y FAST R E C O V E R Y R E C T IF IE R S REDRESSEURS RAPIDES A H A U T RENDEMENT
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0DG2252
7T2C1537
0QQ22S7
diode BYW 92
5 amp diode byw 92
diode BYW 92-200
SA 9259
diode puissance 30 amp
BYW 90
diode BYW 66
diodes byw
5 amp diode byw 92-200
rms p2f
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diode BYW 85
Abstract: BYW89 diodes byw 86 diode BYW 60 N5626 diode BYW 200 813BB diode BYW BYW 89 BYW 90
Text: BYW 82 STBYW 86 Silizium-Mesa-Dioden Silicon-Mesa-Diodes Anwendungen: Leistungsgleichrichter Applications: Power re ctifie r Besondere Merkmale: Features: • Kontrolliertes- Avalancheverhalten • H erm etische Glaspassivierung • G ute W ärm eableitung über die
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Untitled
Abstract: No abstract text available
Text: Æ T SGS-THOMSON [»m as'riiM oes BYW 98-50 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES • VERY LOW CONDUCTION LOSSES ■ NEGLIGIBLE SW ITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES ■ HIGH SURGE CURRENT . THE SPECIFICATIONS AND CURVES EN
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diodes byw
Abstract: BYW 90
Text: HO g @llLIM®[iiiO(g® S *7Æ, G S - 1 H M S BYW 92-50 N 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES • VERY LOW CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES ■ HIGH SURGE CURRENT AND AVALANCHE CAPABILITY
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AT100Â
20J1S
diodes byw
BYW 90
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WJ 60
Abstract: diodes byw 92 04-TP
Text: f Z 7 SCS-THOMSON 7# “ BYW 92 -5 0 -> 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES • VERY LOW CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES ■ HIGH SURGE CURRENT AND AVALANCHE CAPABILITY ■ THE SPECIFICATIONS AND CURVES EN
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