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    BYV 27 Search Results

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    BYV 27 Price and Stock

    Vishay Semiconductors BYV27-150-TR

    DIODE AVALANCHE 165V 2A SOD57
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    DigiKey BYV27-150-TR Cut Tape 31,200 1
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    • 10 $0.594
    • 100 $0.89
    • 1000 $0.29771
    • 10000 $0.27432
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    BYV27-150-TR Reel 25,000 5,000
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    Vishay Semiconductors BYV27-100-TR

    DIODE AVALANCHE 100V 2A SOD57
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    DigiKey BYV27-100-TR Cut Tape 28,799 1
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    • 10 $0.579
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    • 1000 $0.28993
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    BYV27-100-TR Reel 25,000 5,000
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    Vishay Semiconductors BYV27-150-TAP

    DIODE AVALANCHE 165V 2A SOD57
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    DigiKey BYV27-150-TAP Cut Tape 14,963 1
    • 1 $0.89
    • 10 $0.594
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    • 1000 $0.29771
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    BYV27-150-TAP Ammo Pack 10,000 5,000
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    Vishay Semiconductors BYV27-100-TAP

    DIODE AVALANCHE 100V 2A SOD57
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    DigiKey BYV27-100-TAP Cut Tape 12,169 1
    • 1 $0.86
    • 10 $0.579
    • 100 $0.86
    • 1000 $0.28993
    • 10000 $0.26704
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    BYV27-100-TAP Ammo Pack 10,000 5,000
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    New Advantage Corporation BYV27-100-TAP 70,000 1
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    Vishay Semiconductors BYV27-600-TAP

    DIODE AVALANCHE 600V 2A SOD57
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    DigiKey BYV27-600-TAP Ammo Pack 10,000 5,000
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    New Advantage Corporation BYV27-600-TAP 50,000 1
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    Find more BYV 27 price and stock on Findchips.com

    BYV 27 Datasheets (99)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BYV27 Diodes 2.0A SUPER-FAST GLASS BODY RECTIFIER Original PDF
    BYV27 Philips Semiconductors Ultra fast low-loss controlled avalanche rectifiers Original PDF
    BYV27 Vishay Telefunken Ultra Fast Silicon Mesa Rectifiers Original PDF
    BYV27/... Vishay Telefunken Ultra Fast Avalanche Sinterglass Diode Original PDF
    BYV27 Unknown Cross Reference Datasheet Scan PDF
    BYV27 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BYV27 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BYV27-050-TAP Vishay Semiconductors Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE AVAL 2A 50V SOD57 Original PDF
    BYV27-050-TR Vishay Semiconductors Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE AVAL 2A 50V SOD57 Original PDF
    BYV27-100 Changzhou Galaxy Electrical Rectifier Diode, Ultra Fast Recovery Rectifier, Single, 100V, DO-15L, 2-Pin Original PDF
    BYV27/100 Diodes 100V 2.0A super-fast glass body rectifier Original PDF
    BYV27100 Diodes 2.0A SUPER-FAST GLASS BODY RECTIFIER Original PDF
    BYV27-100 EIC Semiconductor Avalanche Fast Recovery Diode Original PDF
    BYV27-100 General Semiconductor GLASS PASSIVATED FAST EFFICIENT RECTIFIER Original PDF
    BYV27-100 Philips Semiconductors Ultra fast low-loss controlled avalanche rectifiers Original PDF
    BYV27-100 Philips Semiconductors Epitaxial Avalanche Diodes Original PDF
    BYV27/100 Vishay Intertechnology Ultra Fast Silicon Mesa Rectifier Original PDF
    BYV27/100 Vishay Telefunken Ultra Fast Silicon Mesa Rectifiers Original PDF
    BYV27-100 Vishay Telefunken Ultra Fast Silicon Mesa Rectifiers Original PDF
    BYV27-100 International Semiconductor Rectifier Diode, Ultra Fast Recovery Rectifier, Single, 100V, DO-204AP, 2-Pin Scan PDF

    BYV 27 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BYV27 Spice

    Abstract: BECKMAN transistor 702m BYV27 BYV27-200 85740
    Text: VISHAY BYV27_Spice Vishay Semiconductors BYV27 Spice Parameters * Technology: DISCRETE DIODE * Device: Rectifier Diode BYV 27 200 * Model established: 04-95, by B. Beckmann, TM1iC63-HN + IS = 34p RS = 213m N = 1.117 IBV= 100p + CJO=114.7p VJ = 702m M = 385m FC = 500m


    Original     		PDF BYV27 TM1iC63-HN 25-Nov-03 D-74025 BYV27 Spice BECKMAN transistor 702m BYV27-200 85740

    byv ultra Fast Recovery Rectifier

    Abstract: BYV 30 45 BYV 200 BYV27
    Text: BYV27/. TELEFUNKEN Semiconductors Ultra Fast Silicon Mesa Rectifiers Features D Controlled avalanche characteristic D Low forward voltage D Ultra fast recovery time D Glass passivated junction D Hermetically sealed package Applications 94 9539 Very fast rectifier e.g. for switch mode


    Original     		PDF BYV27/. D-74025 byv ultra Fast Recovery Rectifier BYV 30 45 BYV 200 BYV27

    CX 879

    Abstract: No abstract text available
    Text: 879 @O?F@ FI@E 9 CJLH @ EBLHBNF@>GGR MB>GBA G>N@EFID LBG>R EC<;8: CVS`a^V_ 3 EehY[ XWbWdY[Z bWjY^_d] h[bWo 3 54@ YedjWYji im_jY^_d] YWfWX_b_jo 3 EW_bkh[ hWj[ YWd X[ J b[l[b 3 G_]^ WcX_[dj Wffb_YWX_b_jo 3 @bb c[jWb m[bZ[Z YedijhkYj_ed 3 G[hc[j_YWbbo m[bZ[Z WdZ cWha[Z Xo bWi[h


    Original     		PDF c3i6/63Gp 5729c 5729cWn CX 879

    Untitled

    Abstract: No abstract text available
    Text: C<EA6KDQ@ >JPKL<E ><G C@JF@LD><EEP K@<E@? @E@>LJH F<BG@LD> J@E<P ODLC @KL<=EDKC@? J@ED<=DEDLP CA:978 EZVijgZh 2 IdVY XVc WZ 9@ 6<RY2X 2 EV^ajgZ gViZ XVc WZ IZkZa J 2 G^\] ejgZ c^igd\Zc egdiZXi^dc 2 G^\] VbW^Zci Veea^XVW^a^in 2 @aa bZiVa lZaYZY XdchigjXi^dc0


    Original     		PDF b3h6/63Go 5429bVm 7m924< 79bVm 5529bVm

    TRANSISTOR 58050

    Abstract: 3 pin TRANSISTOR 58050 58050 3 pin transistor 58050 transistor byv 32 diode BYV 88 800 ByV schottky L4985 L4985D SO20
    Text: L4985 HIGH EFFICIENCY SWITCHING REGULATOR PRODUCT PREVIEW OPERATING INPUT VOLTAGE: FROM 4.5V TO 21V HIGHEFFICIENCY 3A STEP DOWN CONVERTER 3A @ 3.3V OUTPUT VOLTAGE FROM 4.5V INPUT VOLTAGE ADJUSTABLE OUTPUT VOLTAGE FROM 1.28V GATE DRIVER FOR SYNCHRONOUS RECTIFICATION


    Original     		PDF L4985 L4985D TRANSISTOR 58050 3 pin TRANSISTOR 58050 58050 3 pin transistor 58050 transistor byv 32 diode BYV 88 800 ByV schottky L4985 L4985D SO20

    TRANSISTOR 58050

    Abstract: 58050 3 pin TRANSISTOR 58050 58050 3 pin transistor 58050 transistor LXF Series REGULATOR IC V17 specifications of 24 volt stepdown transformer LXF CAPACITORS dc-dc stepdown converter 12 to 5v 3a
    Text: L4985 HIGH EFFICIENCY SWITCHING REGULATOR PRODUCT PREVIEW OPERATING INPUT VOLTAGE: FROM 4.5V TO 21V HIGHEFFICIENCY 3A STEP DOWN CONVERTER 3A @ 3.3V OUTPUT VOLTAGE FROM 4.5V INPUT VOLTAGE ADJUSTABLE OUTPUT VOLTAGE FROM 1.28V GATE DRIVER FOR SYNCHRONOUS RECTIFICATION


    Original     		PDF L4985 L4985D TRANSISTOR 58050 58050 3 pin TRANSISTOR 58050 58050 3 pin transistor 58050 transistor LXF Series REGULATOR IC V17 specifications of 24 volt stepdown transformer LXF CAPACITORS dc-dc stepdown converter 12 to 5v 3a

    55120 ferrite

    Abstract: 58050 3 pin transistor 58050 byv 32 diode L4985 LXF CAPACITORS 12V DC to 24V dC converter schematic diagram 330nF capacitor LXF Series osc coil 85khz
    Text: APPLICATION NOTE HIGH EFFICIENCY DOUBLE DC-DC CONVERTER WITH L4985 by : Claudio Adragna The growing use of portable equipments supplied by rechargeable batteries requests the implementation of power supplies able to operate with high efficiency at low voltages, as well as to perform


    Original     		PDF L4985 L4985 55120 ferrite 58050 3 pin transistor 58050 byv 32 diode LXF CAPACITORS 12V DC to 24V dC converter schematic diagram 330nF capacitor LXF Series osc coil 85khz

    esja

    Abstract: ESJC ESJA82-12 BYV 35 esjc 0309 ESJA 52-12
    Text: Epitaxial Rectifier Diodes A tA = 25°C vF V ~ ¡F = I favm tv, = 25°C • ■ ■ ■ BYV 32-150 150 BYV 32-200 200 BYW 29-200 200 Not for new design 2x10 2x10 8 150 150 80 < 1,15 < 1,15 < 1,3 Ifsm Ifavm A t=8,3ms tvj = 25°C mA Ir trr outline mA ns < 35


    OCR Scan     		PDF ESJA82-12 esja ESJC ESJA82-12 BYV 35 esjc 0309 ESJA 52-12

    SCHOTTKY bys 92-50

    Abstract: RECTIFIER bys 92-50 BYV 35 BYS 98-50
    Text: Epitaxial rectifier diodes Type V r rm Ifa v m t A = 25 °C V A vF Ifs m 10 ms, t,r Ir = Outline max ¡F - 1FAV W tV| = 25 °C VR tv , - a . A V mA ns °c < 0 .3 5 <50 150 111 112 V rh M • BYV 29-500 500 g 100 < 1 .4 ■ BYV 32-150 150 2x10 150 < 1.15 < 0 .6


    OCR Scan     		PDF

    ESJA

    Abstract: ESJC
    Text: Epitaxial Rectifier Diodes rrm V Ifa vm V Ifs m BYV 32-150 150 BYV 32-200 200 BYW 29-200 200 Not for new design Ir trr ns V mA = I fAVM tVJ= 25°C Vr = VHRM 150 150 80 < 1,15 < 1,15 <1,3 <0,6 <0,6 <0,6 V rrm If s m IpAVM kV A t=8,3ms tvj = 25°C mA tA = 25°C


    OCR Scan     		PDF DD21liD ESJA ESJC

    IN5711

    Abstract: 1N3595DHD 4148 GERMANIUM IN5818 SMALL SIGNAL SCHOTTKY DIODES DO-35 IN270 CB-26 thomson 5ns BYV 200 in3595
    Text: S G S-TH O M SO N D | - 712*1237 Ü D a 4 fl?4 THOMSON SEMI CONDUCTORS 0 T~ Y- ° — / ~ o 7 ~ germanium signal diodes Types •o Vr • f @ Vp = IV ■r m ax max min m ax V (mA) {mAJ <k A ) I Case Vr (V) gold bond Tamb = 2 5 °C / V 90 100 IN 270 200 100


    OCR Scan     		PDF CB-26) 1N3595DHD CB-102) /10mA CB-101) IN5711 4148 GERMANIUM IN5818 SMALL SIGNAL SCHOTTKY DIODES DO-35 IN270 CB-26 thomson 5ns BYV 200 in3595

    TFK diodes BYW 76

    Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
    Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35


    OCR Scan     		PDF

    SCHOTTKY DIODES CROSS REFERENCE

    Abstract: SD 102 M BAT19 BAT29 equivalent 1ss99 BA 5818 SD-101 equivalent BAT29 bat 301 l BAR10
    Text: SCHOTTKY DIODES CROSS REFERENCE INDUSTRY PART NUMBER SGS-THOMSON DIRECT REPLACEMENT SGS-THOMSON NEAREST EQUIVALENT INDUSTRY PART NUMBER SGS-THOMSON DIRECT REPLACEMENT SGS-THOMSON NEAREST EQUIVALENT TM M 62/63 1N 5711 1N 5711 LL101 A 1N 5712 1N 5712 LL 103 A.P.C


    OCR Scan     		PDF BAR11 LL101 BAT47/48 BAT19 BAT29 10/BAT19 10/BAT SCHOTTKY DIODES CROSS REFERENCE SD 102 M BAT29 equivalent 1ss99 BA 5818 SD-101 equivalent bat 301 l BAR10

    byw32-200

    Abstract: BY228-1500 BYV 200 byt 77 byv 25-200 BYV13 BYV14 BYV16 BYW32 BYW33
    Text: TELEFUNKEN ELECTRONIC ñ lC J> • ñc!5D0tlb OOQSb^ B MAU6G 'T-O f^ O f Sinterglass Rectifiers Fast Rectifiers-Soft recovery—in Sinterglass package: ^ R _ 2 5 ns tt>*550 ns Type Electrical characteristics Vr W VRRM V A BY 203/12 S /16S /20S BY 228 BY 228/13 S


    OCR Scan     		PDF BYW32 BYW33 BYW34 BYW35 BYW36 BYW72 BYW73 BYW74 BYW75 BYW76 byw32-200 BY228-1500 BYV 200 byt 77 byv 25-200 BYV13 BYV14 BYV16

    LDR 03

    Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
    Text: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren


    OCR Scan     		PDF

    BYV27-200

    Abstract: No abstract text available
    Text: BYV27-50 THRU BYV27-200 GLASS PASSIVATED FAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 2.0 Amperes FEATURES DO-2Q4AP ♦ ♦ ♦ ♦ ♦ A # A“7 1 I Û240H MA> A \J-± ♦ ♦ ♦ ♦ t High temperature metallurgically bonded construction


    OCR Scan     		PDF BYV27-50 BYV27-200 MIL-S-19500 D0-204AP BYV27-200

    BYV26

    Abstract: BYV26A BYV26B BYV26C BYV26D BYV26E BYV26F BYV26G diode BYV26E
    Text: N AUER P H I L I P S / D I S C R E T E bbsa^ai b' i E D027D2b Philips Semiconductors • N o n -sn a p -o ff soft- recovery sw itch in g ch a racteristics • C a p a bility of absorb in g reverse tra n sie n t energy. BYV26 series Q U IC K R E FE R E N C E DATA


    OCR Scan     		PDF D027DEb BYV26 BYV26A BYV26B BYV26C BYV26D BYV26E BYV26F BYV26G diode BYV26E

    diodes byw

    Abstract: byw 15200 BYW 90 byw 15400 byv 71-100 BYW 200 diodes byw 16400 byw 150 byw 15600 pfr 852
    Text: fast recovery rectifier diodes < 100 A diodes de redressement rapide < 100 A THOMSON-CSF Type» •o Vrr m ■f s m 10 ms A (V) (A) vF / if |r / v r r m tirr (A) max (mA) max (nis) max 3 A / Ta n ib = 9 0 ° C PFR 850 PFR 851 PFR 852 PFR 854 PFR 856 3 3 A / Tam b = 5 0 ° C


    OCR Scan     		PDF CB-197) CB-227) 1000VIBY339 diodes byw byw 15200 BYW 90 byw 15400 byv 71-100 BYW 200 diodes byw 16400 byw 150 byw 15600 pfr 852

    RPY 86

    Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
    Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­


    OCR Scan     		PDF

    esm diodes

    Abstract: 181800r c81 004 cb33 182100 REDRESSEMENT ESM182-100R 87400 DRT76 C701
    Text: C B 1 9 7 (C B 1 2 6 ) (C B 3 3 ) (T O 126 ) Fast recovery silicon re c tifie r diodes — t rr 3 0 0 ns D io d e s d e re d re s s e m e n t ra p id e s a u s ilic iu m — t r r 3 0 0 ns Case Type B oîtier V RRM (V) T (vjï (°C) max •f s m (A) l 0 <A)


    OCR Scan     		PDF D029pl. lTamb50Â D027pl. esm diodes 181800r c81 004 cb33 182100 REDRESSEMENT ESM182-100R 87400 DRT76 C701

    BYV42-200

    Abstract: BYV72E-200 BY359-1500 PBYR1540CT PBYR1535CT PBYR10-25 BY359X-1500 BYV42-150 BYV29F500 BYV72F-200
    Text: Philips Semiconductors Index Power Diodes Type Number BR211-140 BR211-160 BR 211-180 BR 211-200 BR211-220 BR211-240 BR 211-260 BR 211-280 Page 30 BR211SM-140 BR211SM-160 BR211SM-180 BR211SM-200 BR211SM-220 BR211SM-240 BR211SM-260 BR211SM-280 35 BY229-200 BY229-400


    OCR Scan     		PDF BR211-140 BR211-160 BR211-220 BR211-240 BR211SM-140 BR211SM-160 BR211SM-180 BR211SM-200 BR211SM-220 BR211SM-240 BYV42-200 BYV72E-200 BY359-1500 PBYR1540CT PBYR1535CT PBYR10-25 BY359X-1500 BYV42-150 BYV29F500 BYV72F-200

    BYS 21-90

    Abstract: 3045 PT bys 26-45 SCHOTTKY bys 50 2x165
    Text: Schottky rectifier diodes Type Ifavm I fsm VF tA = 2 5 "C 10 ms '[ = lAv'I.I tv| = 25 "C V A A BYS 21-45 45 1.0 BYS 21-90 90 BYS 22-45 Outline RthJC RthJA 1v] ' !rt • V °c /w °c /w °c 50 0.55 - 20 125 1.0 30 0.90 - 30 125 45 1.7 100 0.55 - 8 125 BYS 22-90


    OCR Scan     		PDF

    RECTIFIER bys 92-50

    Abstract: SCHOTTKY bys 92-50 BYS 21-45 TH 2190 BYV 30 45 BYV 77
    Text: Schottky rectifier diodes Type Vrrm VF If a v m If s m tA = 25 °C 10 ms R th J C R th J A tv j m ax Outline ¡ f = Ifavm tv| = 25 °C V A V °CI\N °c/w BYS 21-45 45 1,0 50 0,55 - 20 125 119 BYS 21-90 90 1,0 30 0,90 - 30 125 119 BYS 22-45 45 1,7 100 0,55


    OCR Scan     		PDF

    BYV 200

    Abstract: No abstract text available
    Text: BYV27-50 THRU BYV27-200 MINIATURE GLASS PASSIVATED FAST EPITAXIAL RECTIFIER Voltage - 50 to 200 Volts Current - 2 . 0 Amperes FEATURES ♦ Glass passivated cavity-free junction ♦ Superfast recovery times-epitaxial construction ♦ Low forward voltage, high current capability


    OCR Scan     		PDF BYV27-50 BYV27-200 MIL-S-19500 10ns/cm BYV 200