Diode BYV 95
Abstract: byv 16 BYV 08
Text: BYV12, BYV 13, BYV 14, BYV 15, BYV 16 Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Lead Pb -free component • Compliant to RoHS directive 2002/95/EC and in
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BYV12,
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
BYV12
BYV13
BYV14
BYV15
BYV16
Diode BYV 95
byv 16
BYV 08
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BYV 200
Abstract: No abstract text available
Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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O-220AB
J-STD-020,
O-263AB
O-220AB
ITO-220AB
2002/95/EC
2002/96/EC
ITO-220AB
BYV32
BYVF32
BYV 200
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BYV32
Abstract: BYV32-100 BYVF32 JESD22-B102D J-STD-002B
Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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O-220AB
J-STD-020C,
O-263AB
ITO-220AB
2002/95/EC
2002/96/EC
ITO-220AB
BYV32
BYVF32
BYV32-100
JESD22-B102D
J-STD-002B
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BYV32
Abstract: BYVF32 JESD22-B102D J-STD-002B
Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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O-220AB
J-STD-020C
O-263AB
2002/95/EC
2002/96/EC
ITO-220AB
BYV32
BYVF32
O-263AB
08-Apr-05
JESD22-B102D
J-STD-002B
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BYVB32-200-E3
Abstract: BYV32 BYVF32 JESD22-B102D J-STD-002B Diode BYV 95
Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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O-220AB
J-STD-020C,
O-263AB
ITO-220AB
2002/95/EC
2002/96/EC
ITO-220AB
BYV32
BYVF32
BYVB32-200-E3
JESD22-B102D
J-STD-002B
Diode BYV 95
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BYV32-200E
Abstract: Diode BYV 95
Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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O-220AB
ITO-220AB
BYV32
BYVF32
O-263AB
J-STD-020,
ITO-220AB
2002/95/EC
BYV32-200E
Diode BYV 95
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BYV32
Abstract: BYVF32 JESD22-B102 J-STD-002 BYV 35 C BYV 35
Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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O-220AB
J-STD-020,
O-263AB
O-220AB
ITO-220AB
2002/95/EC
2002/96/EC
ITO-220AB
BYV32
BYVF32
JESD22-B102
J-STD-002
BYV 35 C
BYV 35
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Untitled
Abstract: No abstract text available
Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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O-220AB
ITO-220AB
BYV32
BYVF32
O-263AB
J-STD-020,
ITO-220AB
2002/95/EC
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BYV32-150
Abstract: byv 20 BYV32100
Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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O-220AB
ITO-220AB
BYV32
BYVF32
O-263AB
J-STD-020C,
ITO-220AB
2002/95/EC
BYV32-150
byv 20
BYV32100
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BYV32-200E
Abstract: BYV32 BYVF32 JESD22-B102 J-STD-002 byv325
Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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O-220AB
J-STD-020,
O-263AB
O-220AB
ITO-220AB
2002/95/EC
2002/96/EC
ITO-220AB
BYV32
BYVF32
BYV32-200E
JESD22-B102
J-STD-002
byv325
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Untitled
Abstract: No abstract text available
Text: BYV 10-60 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featuring very low forwardvoltagedrop and fastrecovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.
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BYV27 Spice
Abstract: BECKMAN transistor 702m BYV27 BYV27-200 85740
Text: VISHAY BYV27_Spice Vishay Semiconductors BYV27 Spice Parameters * Technology: DISCRETE DIODE * Device: Rectifier Diode BYV 27 200 * Model established: 04-95, by B. Beckmann, TM1iC63-HN + IS = 34p RS = 213m N = 1.117 IBV= 100p + CJO=114.7p VJ = 702m M = 385m FC = 500m
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BYV27
TM1iC63-HN
25-Nov-03
D-74025
BYV27 Spice
BECKMAN
transistor 702m
BYV27-200
85740
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Untitled
Abstract: No abstract text available
Text: BYV 10-60 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.
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Untitled
Abstract: No abstract text available
Text: BYV 10- 40 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.
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byv 65
Abstract: No abstract text available
Text: BYV 10- 40 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.
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byv 20
Abstract: byv 65
Text: BYV 10-20 A SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.
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byv 20
Abstract: No abstract text available
Text: BYV 10-60 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.
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Untitled
Abstract: No abstract text available
Text: BYV 10-60 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.
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byv 65
Abstract: No abstract text available
Text: BYV 10-60 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.
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Untitled
Abstract: No abstract text available
Text: BYV 10- 40 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.
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BYV 200
Abstract: byv 20
Text: BYV 10-20 A SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.
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BYV 200
Abstract: BYV 35 byv ultra Fast Recovery Rectifier
Text: Lß S A G rlB B ULTRA-FAST-RECOVERY-RECTIFIER DIODES V RRM V Type I I V at I F FA V FSM F (A) (V) (A) (A) rr (ns) T jmax (C) BYV BYV BYV BYV BYV BYV BYV 01-100 01-150 01-200 01-300 01-400 01-500 01-600 100 150 200 300 400 500 600 1.0 1.0 1.0 1.0 1.0 1.0
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BYW 200
Abstract: diodes byw 92 byw 150 diodes byw 08 200 Thomson-CSF diodes de redressement Diodes de redressement diodes byw CB-34 1250A2s 92200
Text: h ig h e ffic ie n c y f a s t r e c o v e r y r e c t if ie r d io d e s y THOMSON-CSF diodes de redressement rapide à haut rendement Types •o Vrrm >FSM 10 ms A <V ) (A) Tj = 150° C 35A / Tease = 110°C N N N BYV 92-200 (R) BYV 92-300 (R) BYV 92-400 (R)
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28UNF*
CB-34)
BYW 200
diodes byw 92
byw 150
diodes byw 08 200
Thomson-CSF diodes de redressement
Diodes de redressement
diodes byw
CB-34
1250A2s
92200
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SCHOTTKY bys 92-50
Abstract: RECTIFIER bys 92-50 BYV 35 BYS 98-50
Text: Epitaxial rectifier diodes Type V r rm Ifa v m t A = 25 °C V A vF Ifs m 10 ms, t,r Ir = Outline max ¡F - 1FAV W tV| = 25 °C VR tv , - a . A V mA ns °c < 0 .3 5 <50 150 111 112 V rh M • BYV 29-500 500 g 100 < 1 .4 ■ BYV 32-150 150 2x10 150 < 1.15 < 0 .6
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