Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BVN MOSFET Search Results

    BVN MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    BVN MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SSR -40 DD

    Abstract: No abstract text available
    Text: SSR/U1N50A A d va n ce d Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 500 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 nA M ax @ VDS= 500V


    OCR Scan     		PDF SSR/U1N50A 1N50A SSR -40 DD

    700v 4A mosfet

    Abstract: sss6n70a
    Text: SSS6N70A A d v a n c e d Power MOSFET FEATURES bvdss Low RDS on : 1.552 Ct (Typ.) 1.8 Q > • ^DS(on) = II Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 m A (Max.) @ Vos = 700V


    OCR Scan     		PDF SSS6N70A 300nF 700v 4A mosfet sss6n70a

    Untitled

    Abstract: No abstract text available
    Text: SSH4N90AS Advanced Power MOSFET FEATURES BVdss = 900 V • ■ Avalanche Rugged Technology Rugged Gate Oxide Technology ^DS on = ■ ■ Lower Input Capacitance Improved Gate Charge lD = 4.5 A ■ ■ Extended Safe Operating Area Lower Leakage Current : 25|iA (Max.) @ VDS = 900V


    OCR Scan     		PDF SSH4N90AS

    Untitled

    Abstract: No abstract text available
    Text: IRFW/I550A Advanced Power MOSFET FEATURES b v d ss • ■ ■ ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 1 7 5 t Operating Temperature Lower Leakage Current : 10 uA M ax. @ V ^ 100V


    OCR Scan     		PDF IRFW/I550A

    h51 diode

    Abstract: RG-136
    Text: SSW/I4N90A Advanced Power MOSFET FEATURES - 900 V ^D SS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |uA Max. @ VDS = 900V


    OCR Scan     		PDF SSW/I4N90A h51 diode RG-136

    L0250

    Abstract: L014A
    Text: IRFW/I644A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ B V dss = 2 5 0 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 m A Max. @ VOS= 250V


    OCR Scan     		PDF IRFW/I644A L0250 L014A

    Untitled

    Abstract: No abstract text available
    Text: SSS4N80AS Advanced Power MOSFET FEATURES BV0SS = 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ ■ ■ ■ RoS on = 3.0 £2 Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25|iA (M ax.) @ VDS = 800V


    OCR Scan     		PDF SSS4N80AS

    Untitled

    Abstract: No abstract text available
    Text: SSF17N60A Advanced Power MOSFET FEATURES = b v d ss 600 V • Avalanche Rugged Technology ^D S on = ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 25 pA(Max.) @ V 03 = 600V


    OCR Scan     		PDF SSF17N60A D04D171 0G3b333 QG3b33M G03b335

    Untitled

    Abstract: No abstract text available
    Text: SSP6N90A A d va n ce d Power MOSFET FEATURES - b v dss 900 V • Avalanche Rugged Technology ^DS on = 2 .3 Q ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 900V ■ Low RDS(ON) : 1.829 i2(Typ.)


    OCR Scan     		PDF SSP6N90A 003b32fl O-220 7Tb4142 DD3b33D

    Untitled

    Abstract: No abstract text available
    Text: IRFW/IZ14A Advanced Power MOSFET FEATURES BVdss = 60 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 1 7 5 t Operating Temperature ■ Lower Leakage Current : 10 MA{Max.


    OCR Scan     		PDF IRFW/IZ14A

    Untitled

    Abstract: No abstract text available
    Text: IRFW/I820A Advanced Power MOSFET FEATURES B V dss = 5 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 n A Max. @ VDS= 500V


    OCR Scan     		PDF IRFW/I820A

    IRF 640 mosfet

    Abstract: SSS5N80A MOSFET 150 N IRF
    Text: SSS5N80A A d v a n c e d Power MOSFET FEATURES BV • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology Lower Leakage Current : 25 ^A Max. @ VDS = 800V ■ Low RDS(0N) : 1.824 Q (Typ.) 2.2 £2 < ■ II Improved Gate Charge Extended Safe Operating Area


    OCR Scan     		PDF SSS5N80A 0040S73 DD40574 G4G575 IRF 640 mosfet SSS5N80A MOSFET 150 N IRF

    Untitled

    Abstract: No abstract text available
    Text: SSP3N80A A d v a n c e d Power MOSFET FEATURES B ^ dss - • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower-Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA Max. @ VDS = 800V


    OCR Scan     		PDF SSP3N80A 00403b4 003b32fl 3b32t O-220 7Tb4142 DD3b33D

    N-Channel mosfet 400v 25A

    Abstract: IRF820A N-Channel mosfet driver 400v to220
    Text: IRF820A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ B V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 ji A Max. @ Lower R ^ onj : 2.000 £2 (Typ.)


    OCR Scan     		PDF IRF820A O-220 N-Channel mosfet 400v 25A IRF820A N-Channel mosfet driver 400v to220

    sss4n60a

    Abstract: mosfet 407 SSS4N60AS
    Text: SSS4N60AS Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BV0SS = 600 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 nA Max. @ Lower RDS(ON) : 2.037 Q. (Typ.)


    OCR Scan     		PDF SSS4N60AS sss4n60a mosfet 407 SSS4N60AS

    SSH6N80AS

    Abstract: SSH6N80A MOSFET 800V 3A
    Text: SSH6N80AS Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ I BVdss Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 MA Max. @ VDS= 800V Low ^ ds{on) • 1-472 £2 (Typ.)


    OCR Scan     		PDF SSH6N80AS SSH6N80AS SSH6N80A MOSFET 800V 3A

    Untitled

    Abstract: No abstract text available
    Text: SSS1N60A Advanced Power MOSFET FEATURES BVoss “ 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 yA M ax. @ VOS= 600V


    OCR Scan     		PDF SSS1N60A

    DD313

    Abstract: IRFS614A
    Text: IRFS614A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ sv DSS = 250 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 M A{M ax. @ VDS = 250V


    OCR Scan     		PDF IRFS614A DD313 IRFS614A

    SFS9634

    Abstract: p-channel 250V power mosfet DIODE D3S 90 Power MOSFET P-Channel 250V 50A d3s diode
    Text: SFS9634 Advanced Power MOSFET FEATURES BVdss = -250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |iA Max. @ VDS= -250V


    OCR Scan     		PDF -250V SFS9634 SFS9634 p-channel 250V power mosfet DIODE D3S 90 Power MOSFET P-Channel 250V 50A d3s diode

    L20A

    Abstract: No abstract text available
    Text: IRFP240A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ B V dss = 2 0 0 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 m A Max. @ VDS= 200V


    OCR Scan     		PDF IRFP240A L20A

    SSH7N90A

    Abstract: No abstract text available
    Text: SSH7N90A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 pA Max. @ VDS= 900V Low RDS(ON) : 1.247 Q. (Typ.)


    OCR Scan     		PDF SSH7N90A SSH7N90A

    rc261

    Abstract: No abstract text available
    Text: SSS4N80A Advanced Power MOSFET FEATURES BVdss ” 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 uA M ax. @ VDS= 800V


    OCR Scan     		PDF SSS4N80A rc261

    SSH10N60A

    Abstract: No abstract text available
    Text: SSH10N60A Advanced Power MOSFET FEATURES B V d ss = 6 0 0 V • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 t-i A M ax. @ VDS = 600V


    OCR Scan     		PDF SSH10N60A SSH10N60A

    Untitled

    Abstract: No abstract text available
    Text: SSF9N80A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ B V Dss = 8 0 0 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 jaA Max. @ V ^ = 800V


    OCR Scan     		PDF SSF9N80A