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Rochester Electronics LLC BUZ21 MOSFET N-CH 100V 21A TO220AB
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DigiKey	BUZ21	Tube			204	1 - 10 - 100 - 1000 $1.48 10000 $1.48	Buy Now
Siemens BUZ21L
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Bristol Electronics	BUZ21L		444		3	1 - 10 $2.464 100 $1.232 1000 $1.0677 10000 $1.0677	Buy Now
Quest Components	BUZ21L		2,091			1 $4.5 10 $4.5 100 $4.5 1000 $4.5 10000 $1.575	Buy Now
	BUZ21L		75			1 $3.3 10 $2.2 100 $1.65 1000 $1.65 10000 $1.65	Buy Now
ComSIT USA	BUZ21L		243			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG BUZ21 TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,21A I(D),TO-220AB
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Quest Components	BUZ21		29,353			1 $2.8 10 $2.8 100 $2.8 1000 $1.05 10000 $1.05	Buy Now
ComSIT USA	BUZ21		443			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Siemens BUZ21SMD 21 A, 100 V, 0.085 OHM, N-CHANNEL, SI, POWER, MOSFET
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Quest Components	BUZ21SMD		197			1 - 10 - 100 - 1000 - 10000 -	Buy Now
Siemens BUZ21 TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,21A I(D),TO-220AB
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Quest Components	BUZ21		8			1 $3.06 10 $2.04 100 $2.04 1000 $2.04 10000 $2.04	Buy Now
Chip 1 Exchange	BUZ21		1,156			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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BUZ21 Datasheets (57)

Part	Manufacturer	Description	Datasheet Type	PDF
BUZ21	Harris Semiconductor	Power MOSFET Selection Guide	Original	PDF
BUZ21	Infineon Technologies	Power MOSFET, 100V, TO-220, RDSon=0.085 ?, 21A, NL	Original	PDF
BUZ21	Intersil	19A, 100V, 0.100 ?, N-Channel Power MOSFET	Original	PDF
BUZ21	Philips Semiconductors	PowerMOS Transistor	Original	PDF
BUZ21	Siemens		Original	PDF
BUZ21	Siemens	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)	Original	PDF
BUZ21	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
BUZ21	International Rectifier	RF and BUZ Series Power MOSFETs - N-Channel	Scan	PDF
BUZ21	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
BUZ21	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BUZ21	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
BUZ21	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
BUZ21	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
BUZ21	Semelab	MOS Power Transistor	Scan	PDF

BUZ21	Siemens	Power Transistors	Scan	PDF
BUZ21	Siliconix	MOSPOWER Design Data Book 1983	Scan	PDF
BUZ21	STMicroelectronics	Shortform Data Book 1988	Short Form	PDF
BUZ21	STMicroelectronics	N-Channel Enhancement Mode Power MOS Transistor	Scan	PDF
BUZ210	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BUZ210	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF

BUZ21 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BUZ211 Abstract: No abstract text available Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ211 CASE OUTLINE: TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:	Original	PDF	O-204AA BUZ211 BUZ211
Untitled Abstract: No abstract text available Text: BUZ21L Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)10 I(D) Max. (A)21 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)84 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55õ	Original	PDF	BUZ21L
Untitled Abstract: No abstract text available Text: BUZ216 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V) I(D) Max. (A)4.4 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)	Original	PDF	BUZ216
buz210 Abstract: No abstract text available Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ210 CASE OUTLINE: TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:	Original	PDF	O-204AA BUZ210 buz210
BUZ21 Abstract: TA9854 TB334 Text: BUZ21 Semiconductor Data Sheet 19A, 100V, 0.100 Ohm, N-Channel Power MOSFET October 1998 File Number 2420.1 Features • 19A, 100V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.100Ω (BUZ21) field effect transistor designed for applications such as	Original	PDF	BUZ21 BUZ21) TA9854. BUZ21 TA9854 TB334
Untitled Abstract: No abstract text available Text: BUZ211 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V) I(D) Max. (A)9.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)	Original	PDF	BUZ211
Untitled Abstract: No abstract text available Text: BUZ213 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V) I(D) Max. (A)8.5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)83 Minimum Operating Temp (øC)	Original	PDF	BUZ213
Untitled Abstract: No abstract text available Text: BUZ214 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V) I(D) Max. (A)7.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)83 Minimum Operating Temp (øC)	Original	PDF	BUZ214
Untitled Abstract: No abstract text available Text: BUZ215 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V) I(D) Max. (A)5.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)	Original	PDF	BUZ215
BUZ21 Abstract: No abstract text available Text: SILICONIX INC 1ÖE D fc r'SiKcot. Siliconix in c o rp o ra te d h • ÖSS4735 00145*17 S BUZ21 JL M N-Channel Enhancemenr Mode Transistor T-3PI TOP VIEW TO-220AB PRODUCT SUMMARY V BRJDSS "W 0.10 100 O Id (A 19 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE	OCR Scan	PDF	SS4735 BUZ21 O-220AB QQ14bQQ BUZ21
P50N05 Abstract: p50n06 TP3055EL tp50n05e MTP36N06E Text: N-Channel v«n n f S >« M ix ' Pd IW IM I MIX) so BUZ11 40 2 -4 30 /O 50 BUZ11A 55 2 -4 26 75 100 BUZ20 200 2 -4 1 3 .5 70 100 BUZ21 85 2 -4 21 75 50 BUZ71 100 2 -4 14 40 50 BUZ71A 120 2 -4 13 40 100 IR F 5 1 0 540 2 -4 5.6 43 100 IR F 5 2 0 270 2 -4 9.2	OCR Scan	PDF	BUZ11 BUZ11A BUZ20 BUZ21 BUZ71 BUZ71A TP50N06E MTP50M P50N05 P50N06 P50N05 p50n06 TP3055EL tp50n05e MTP36N06E
BUZ21 Abstract: No abstract text available Text: BUZ21 ££ HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Package Features T O -2 2 0 A B TOP VIEW • 19A, 100V • rDS on) = 0.1 f l • SOA is Power-Dlssipation Limited DRAIN (FLANGE) • Nanosecond Switching Speeds • Linear Transfer Characteristics	OCR Scan	PDF	BUZ21 BUZ21
BUZ21 Abstract: bt 109 transistor BUZ21 L T0220AB Text: N AMER PHILIPS/DISCRETE ! ObE D btiSBT31 D01MM23 T " PowerMOS transistor BUZ21 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , m otor control, welding,	OCR Scan	PDF	btiSBT31 D01MM23 BUZ21 T0220AB; fab53Ã T-39-11 BUZ21 bt 109 transistor BUZ21 L T0220AB
Untitled Abstract: No abstract text available Text: BUZ 21L Infineo n t « c h n o l o g •es SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Type Vds % ^DS on Package Ordering Code BUZ21 L 100 V 21 A 0.085 ü TO-220 AB C67078-S1338-A2 Maximum Ratings Parameter	OCR Scan	PDF	BUZ21 O-220 C67078-S1338-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T

BUZ21 Abstract: No abstract text available Text: / = T S G S -T H O M S O N * 7 # » » itL IIC T ß Ä O tg S B U Z 21 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V Dss BUZ21 100 V ^D S on 0.1 fi 19 A • 100 VO LTS - FOR DC/DC CO NVERTERS • HIGH CURRENT • RATED FOR UNCLAM PED INDUCTIVE	OCR Scan	PDF	BUZ21 BUZ21
BUZ10A Abstract: IEF520 T0220H BUZ63 BUZ10 BUZ11 BUZ23 BUP67 BUP68 BUP70 Text: ì> m Ö1331Ö7 0 G DDlt b3 OS? • S N L B SEM ELABE MOS TRANSISTORS Type Rei BUP67 BUP68 BUP69 BUP70 BUP71 BUZ10 BUZ10A BUZ11 BUZ11A BUZ20 BUZ21 BUZ23 B0Z24 BUZ25 BUZ31 BÜZ32 BUZ35 BUZ36 BUZ41A BUZ42 BUZ45 BUZ45 BUZ45A BUZ46 BUZ50A BUZ50A-T0220ÏÏ BUZ50B	OCR Scan	PDF	D04b3 BUP67 BUP68 BUP69 BUP70 BUP71 BUZ10 T0220 BUZ10A BUZ10A IEF520 T0220H BUZ63 BUZ10 BUZ11 BUZ23
BUZ21 Abstract: schematic diagram UPS din 40040 humidity Text: rrj SCS-THOMSON 4-1% BUZ21 * 7 / . N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS on •d BUZ21 100 V 0.1 ß 19 A . 100 VOLTS - FOR DC/DC CONVERTERS . H IG H CURRENT . RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) ♦ . ULTRA FAST SWITCHING	OCR Scan	PDF	BUZ21 BUZ21 O-220 schematic diagram UPS din 40040 humidity
BUZ21 Abstract: c0074 Text: SGS-THOMSON HUKêirMDÊi BUZ21 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 1 5 6 x 1 5 6 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 6100 A	OCR Scan	PDF	BUZ21 C-0074 c0074
buz21 Abstract: transistor 643 Text: I • 71S1237 7 7 SG S-1H 0M S0N _ 3 0 E V # I , I QQ3D12S fa _ 6 S^THOMSON S BUZ21 CHIP [^D g^(Q [i[Lll ir^©iOgl _ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils	OCR Scan	PDF	BUZ21 156x156 15x19 MC-0074 transistor 643
buz21 Abstract: as58 Text: S G S -T H O M S O N w BUZ21 u r n N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ21 . . . . . . V R d s o h dss 100 V j 0.1 Là Id 21 A AVALANCHE RUG G EDN ESS TECHNO LO GY 100% AVALANCHE TESTED REPETITIVE AVALANC HE DATA AT 100°C LOW GATE CHARGE	OCR Scan	PDF	BUZ21 O-220 buz21 as58
BUZ211 Abstract: 30VN IEC134 Text: BUZ211 PowerMOS transistor N AMER P H I L I P S /D I S CR ET E ObE D ^ 53=131 0014bbö 7 I T - 2 1 -1 3 July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode PARAMETER SYMBOL field-effect power transistor in a Drain-source voltage metal envelope.	OCR Scan	PDF	BUZ211 0014bbÃ T-21-13 0014L7M T-39-13 BUZ211 30VN IEC134
Untitled Abstract: No abstract text available Text: _ • 7 T E T 2 3 7 O O M S bG ? Sbb ■ S 6 T H _ fZ 7 SCS-THOMSON IM g^ i[L[iO¥[RMDOS B U Z 21 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ21 ■ . . . ■ ■ . V dss R D S (on Id 100 V < 0.1 n 21 A TYPICAL RDS(on) = 0.09 Q.	OCR Scan	PDF	BUZ21
Untitled Abstract: No abstract text available Text: _ 30E 1 C T • QQ30122 b ■ / ' p j v t j S G S -T H O M S O N _ S 6 S-ThOMSON ^7# M I^ dLi©¥[^®[i^D©i) ' BUZ21 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 1 5 6 x 1 5 6 mils METALLIZATION: Top Back Al	OCR Scan	PDF	QQ30122 BUZ21
BUZ211 Abstract: No abstract text available Text: _ PowerMOS transistor_ BUZ211 N AMER PHILIPS/DISCRETE DbE D • _ _SL OOlMbbfl 7 ■ T-si-13 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. FREDFET* with fast-recovery reverse diode.	OCR Scan	PDF	BUZ211 T-si-13 bbS3131 D014b T-39-13 BUZ211_ 0014b74 BUZ211

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Rochester Electronics LLC BUZ21

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BUZ21 Datasheets (57)

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