buz 350 equivalent
Abstract: BUP 203 transistor buz 36 BUP 312 BUP 304 leistungstransistoren bup 401 datasheet transistor buz 350 bup 213 BUP 309
Text: Typenübersicht Selection Guide • Leistungstransistoren Forts. ■ Typ VDS ■ Type V 50 50 60 50 50 60 50 50 50 50 100 100 100 100 200 200 200 200 500 500 500 1000 1000 1000 1000 400 400 400 60 60 50 50 50 ■ BUZ 10 ■ BUZ 10L ■ BUZ 10S2 ■ BUZ 11
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O-220
O-218
buz 350 equivalent
BUP 203
transistor buz 36
BUP 312
BUP 304
leistungstransistoren
bup 401 datasheet
transistor buz 350
bup 213
BUP 309
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buz 342 G
Abstract: DIODE BUZ z347 BUP 312 diode z104 z349 z332a IGBT P213 DIODE BUZ 300 buz91a
Text: Gehäuseübersicht Package Information N-Kanal Leistungstransistoren Forts. N Channel Power Transistors G D S G TO-220 AB VDS V 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 100 100 100 100 100 100 100 100 RDS(on) Ω 10 m 18 m 23 m 28 m 30 m
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O-220
O-218
346S2
BUO-218
buz 342 G
DIODE BUZ
z347
BUP 312
diode z104
z349
z332a
IGBT P213
DIODE BUZ 300
buz91a
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BUZ MOSFET
Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
Text: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package
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615NV
OT-223
20iemens
B152-H6493-G5-X-7600
BUZ MOSFET
mosfet BUZ 326
BUP 312
BSS 130
BUP 304
bup 313
615n60
BUZ 840
SGU06N60
BUP 307D
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NEC VFD Display
Abstract: uPD789830 uPD78F9831 2814kHz
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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PD78F9831
U13679EJ2V1UD
NEC VFD Display
uPD789830
uPD78F9831
2814kHz
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uPD789830
Abstract: uPD78F9831 NP-100GC
Text: User’s Manual µPD789830 Subseries 8-Bit Single-Chip Microcontrollers µPD789830 µPD78F9831 Document No. U13679EJ2V0UD00 2nd edition Date Published June 2002 N CP(K) Printed in Japan 1998 [MEMO] 2 User's Manual U13679EJ2V0UD NOTES FOR CMOS DEVICES
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PD789830
PD789830
PD78F9831
U13679EJ2V0UD00
U13679EJ2V0UD
uPD789830
uPD78F9831
NP-100GC
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Untitled
Abstract: No abstract text available
Text: User’s Manual µPD789830 Subseries 8-Bit Single-Chip Microcontrollers µPD789830 µPD78F9831 Document No. U13679EJ2V1UD00 2nd edition Date Published August 2005 N CP(K) 1998 Printed in Japan [MEMO] 2 User's Manual U13679EJ2V1UD NOTES FOR CMOS DEVICES 1
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PD789830
PD789830
PD78F9831
U13679EJ2V1UD00
U13679EJ2V1UD
16-BIT
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BUP 312
Abstract: buz 91 f BUP 303 IGBT DIODE BUZ 537 BUP 203
Text: SIEMENS Typenübersicht Selection Guide Leistungstransistoren Typ Type • BUZ 10 ■ BUZ 10L ■ BUZ10S2 ■ BUZ 11 ■ BUZ11A ■ BUZ11S2 ■ BUZ 11 AL ■ BUZ 12 ■ BUZ12A ■ BUZ 12AL BUZ 20 BUZ 21 BUZ 21L BUZ 22 BUZ 30A BUZ 31 BUZ 31L BUZ 32 BUZ 40B
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BUZ10S2
BUZ11A
BUZ11S2
BUZ12A
O-220
O-218
BUP 312
buz 91 f
BUP 303 IGBT
DIODE BUZ 537
BUP 203
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siemens igbt BSM 25GD 100D
Abstract: siemens igbt BSM 25gd bsm25gd100d BSS 97 bts412a BSM15GD100D BTS 131 SIEMENS Bts 629 BSS145 siemens igbt BSM 25 gb 100 d
Text: Typenübersicht/Selection Guide SIPMOS Power MOS Transistors Families of Types Type ^DS(max) ^D S(on)m ax ^D{max] V Q A Ptoi Package Page W N channel enhancement types £ 0 BUZ 10 EÜL BUZ 10 L 50 0.07 0.07 23 23 75 75 TO-220AB TO-220AB 690 700 £ □ BUZ 11
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O-220AB
O-220
2x100
2x150
100GAL
siemens igbt BSM 25GD 100D
siemens igbt BSM 25gd
bsm25gd100d
BSS 97
bts412a
BSM15GD100D
BTS 131 SIEMENS
Bts 629
BSS145
siemens igbt BSM 25 gb 100 d
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BUZ53A
Abstract: No abstract text available
Text: SIEMENS SIPMOS Power Transistor • • BUZ 53 A N channel Enhancement mode Type V'ns BUZ 53 A 1000 V 2.5 A ^DS on Package 11 Ordering Code 5.0 Q TO-204 AA C67078-A1009-A3 Maximum Ratings Parameter Continuous drain current Tc Symbol = 25 "C Values 2.5
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O-204
C67078-A1009-A3
BUZ53A
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BUP 312
Abstract: BUZ22 276 603d BUZ 81 bup300 buz171 BUP314D BUZ,350 BUZ,271 BUZ90A
Text: SIEMENS Typ Type Alphanumerische Typenliste List of Types in Alphanumerical Order Bestellnummer Ordering Code Seite Page Typ Type BUP 200 Q67078-A4400-A2 1125 • BUZ 11 A C67078-S1301 -A3 177 BUP200D Q67040-A4420-A2 1132 ■ BUZ 11 AL C67078-S1330-A3 186
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BUP200D
BUP314D
BUP410D
Q67078-A4400-A2
Q67040-A4420-A2
Q67078-A4401-A2
Q67078-A4402-A2
Q67040-A4407-A2
Q67078-A4203-A2
Q67078-A4205-A2
BUP 312
BUZ22
276 603d
BUZ 81
bup300
buz171
BUZ,350
BUZ,271
BUZ90A
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 40 B SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vfcs BUZ 40 B 500 V h 8.5 A flbSfon 0.8 a Package Ordering Code TO-220 AB C67078-S1305-A4 Maximum Ratings Parameter Symbol Continuous drain current Values
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O-220
C67078-S1305-A4
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transistor buz 311
Abstract: Buz 304 C67078-S1305-A4 T-150 diode sy 104 SIEMENS mcx
Text: SIEMENS BUZ 40 B SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 40 B Vds 500 V Id 8.5 A flDS on 0.8 n Package Ordering Code TO-220 AB C67078-S1305-A4 Maximum Ratings Parameter Symbol Values Continuous drain current
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T35I55
O-220
C67078-S1305-A4
fl235b05
A235bD5
transistor buz 311
Buz 304
C67078-S1305-A4
T-150
diode sy 104
SIEMENS mcx
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Untitled
Abstract: No abstract text available
Text: SIEMENS SIPMOS Power Transistor BUZ 53 A • N channel • Enhancement mode Type BUZ 53 A 1000 V /d Ä|js on Package 1> Ordering Code 2.5 A 5.0 n TO-204 AA C67078-A1009-A3 Maximum Ratings Parameter Symbol Continuous drain current r c = 25 'C íí 2.5 Pulsed drain current, Tc = 25 'C
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O-204
C67078-A1009-A3
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W80S
Abstract: DIODE G14
Text: ÖÖD D • Û235b05 0014514 ? « S I E G 88D 14594 D ~ f BUZ 44 A - SIEMENS AKTIEN6ESELLSCHAF -Main ratings N-Channel = 500 V Draln-source voltage Voa =. 4,8 A Continuous drain current h Draln-source on-reslstance ^D S o n » 1,5 n Description
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235b05
C67078-A1007-A3
23SbQS
T4599
W80S
DIODE G14
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|
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leistungstransistoren
Abstract: bup314d buz 342 G siemens 230 95 O BUP 307D BUZ,350 BUZ,271 BUP400D bup313d BUP314
Text: SIEMENS Gehäuseübersicht Package Information N-Kanal Leistungstransistoren N Channel Power Transistors D i A PN \ ° s TO-220 AB *D S ^ D S o n V 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 100 100 100 100 100 100 100 100 Q 10 18 23 28 m
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O-220
BUZ12A
BUZ11S2
BUZ10S2
O-218
346S2
BUP410D
leistungstransistoren
bup314d
buz 342 G
siemens 230 95 O
BUP 307D
BUZ,350
BUZ,271
BUP400D
bup313d
BUP314
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BUP 300
Abstract: al394 Buz 304 s1348 S1338 buz 210 0C67O78-S311O-A2 BUZ325 S1314 S1313
Text: SIEM ENS Bestellnummer Ordering Code Typ Type 0C67O47-A2O66-A2 BYP 103 0C67O47-A2O71-A2 BYP 102 0C67O47-A2O72-A2 BYP 101 0C67O47-A225O-A2 BYP 300 0C67O47-A2251-A2 BYP 301 0C67O47-A2252-A2 BYP 302 0C67O47-A2253-A2 BYP 303 0C67O47-A2254-A2 BYP 100 0C67O78-A1008-A8
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0C67O47-A2O66-A2
0C67O47-A2O71-A2
0C67O47-A2O72-A2
0C67O47-A225O-A2
0C67O47-A2251-A2
0C67O47-A2252-A2
0C67O47-A2253-A2
0C67O47-A2254-A2
0C67O78-A1008-A8
0C67O78-A1OO8-A9
BUP 300
al394
Buz 304
s1348
S1338
buz 210
0C67O78-S311O-A2
BUZ325
S1314
S1313
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BUZ332A
Abstract: BUZ54A BUZ,350 BUZ p channel BUP 312 BUZ,271 Buz94 BUZ357 buz 91 f BUZ345
Text: Typenübersicht Selection Guide SIEM ENS SIPMOS Power Transistors N Channel Power Transistors s > 7 X s TO-220 AB ^D S ^ D S o n V Q 50 50 50 50 50 50 50 50 50 18m 28m 30m 35m 40m 55m 70m 0.1 0.12 60 60 60 60 60 18m 40m 70m 0.10 0.15 100 100 100 100 100
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VUT05152
O-220
O-218
O-204
346S2
BUZ332A
BUZ54A
BUZ,350
BUZ p channel
BUP 312
BUZ,271
Buz94
BUZ357
buz 91 f
BUZ345
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bsm10gd100dn1
Abstract: BSM10GD100DN BTS 302 BSM10GD100 E6327 BUZ 324 E6288 eTS 410 siemens bsm 101 AR C67076-A2505-A52
Text: SIEMENS Typ/Bestellnummern Type/Ordering Codes Ordering code Type BRT 11 H C67079-A1000-A6 BSM 50 GAL 100 D C67076-A2002-A2 BRT 11 H Option 7 C67079-A1040-A11 BSM 50 GAL 120 D C67076-A2010-A2 BRT 11 H Option 1 + 7 C67079-A1040-A17 BSM 50 GB 100 D C67076-A2100-A2
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E-6288
BSM10GD100DN1
C67079-A1000-A6
C67079-A1040-A11
C67079-A1040-A17
C67079-A1001-A6
C67079-A1041-A5
C67079-A10436
E-6327
BSM10GD100DN
BTS 302
BSM10GD100
E6327
BUZ 324
E6288
eTS 410
siemens bsm 101 AR
C67076-A2505-A52
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BUP101
Abstract: BTS412A buz 607 BTS 304 BUZ 324 BSM181C BTS 413 bsm681f Q62702-S616 62702-S393
Text: Bestellnummern/Ordering Codes Type Ordering code BRT 11 H BRT 11 M B R T 12H BRT 12 H Option 1 BRT 12 H (Option 6) BRT 12 H (Option 7) BRT 12 H (Option 1+6) BRT 12 H (Option 1+7) BRT 12M BRT 1 3 H BRT 1 3 M BRT 21 H BRT 21 M BRT 22 H BRT 22 H (Option 1)
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150GB
0610T
C67078-S3126-A2
C67078-S3133-A2
C67078-S3128-A2
C67078-S3121-A2
C67078-S3120-A2
C67078-S3131-A2
67078-S3115-A2
C67078-S3113-A2
BUP101
BTS412A
buz 607
BTS 304
BUZ 324
BSM181C
BTS 413
bsm681f
Q62702-S616
62702-S393
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BUZ MOSFET
Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8
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615NV
BSP318S
BUZ MOSFET
mosfet BUZ 326
BUZ MOSFET 334
spd14n05
mosfet BUZ 349
mosfet buz 90a
BUZ 100 MOSFET
bup202
BUZ MOSFET 102s
BUZ MOSFET 111S
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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buz44
Abstract: C033 C67078-A1007-A3 BUZ44A T4599
Text: ÖÖD D • 88D öSBSbQS O O m S R M ? « S I E G 14594 d BUZ44 A 7 x 3 * 7 / - SIEMENS AKTIEN6ESELLSCHAF — Main ratings N-Channel = 500 V Draln-source voltage Voa =. 4,8 A Continuous drain current h Draln-source on-reslstance ^DS on 1,5 £2 Description
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PDF
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535b05
C67078-A1007-A3
a23sti0s
T4599
buz44
C033
C67078-A1007-A3
BUZ44A
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RPY 86
Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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