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    BUP 200V Search Results

    BUP 200V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS4200V-01L Coilcraft Inc Current Sense Transformer, 35A, ROHS COMPLIANT Visit Coilcraft Inc
    ISL73024SEHMX Renesas Electronics Corporation 200V, 7.5A Enhancement Mode GaN Power Transistors Visit Renesas Electronics Corporation
    ISL70024SEHMX Renesas Electronics Corporation 200V, 7.5A Enhancement Mode GaN Power Transistor Visit Renesas Electronics Corporation
    ISL73024SEHL/PROTO Renesas Electronics Corporation 200V, 7.5A Enhancement Mode GaN Power Transistors Visit Renesas Electronics Corporation
    ISL73024SEHX/SAMPLE Renesas Electronics Corporation 200V, 7.5A Enhancement Mode GaN Power Transistors, PFL, / Visit Renesas Electronics Corporation

    BUP 200V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IGBT. CM50TF-12H

    Abstract: CM50TF-12H
    Text: MITSUBISHI IGBT MODULES CM50TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. 2 TYP. BvN EvN M F R BwN EwN F R K Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of


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    CM50TF-12H IGBT. CM50TF-12H CM50TF-12H PDF

    BUN DIODE

    Abstract: BUP 304 600v 30a IGBT BUP 300 CM30 bup 304 equivalent bup 77 CM30TF-12H H bridge 300v 30a 12A1000
    Text: CM30TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 30 Amperes/600 Volts A B Q Q R BuP P R EuP BvP BuN EuN BvN R EvP BwP EwP EvN BwN EwN P J U N S - DIA. (2 TYP.) V K H L W H E


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    CM30TF-12H Amperes/600 BUN DIODE BUP 304 600v 30a IGBT BUP 300 CM30 bup 304 equivalent bup 77 CM30TF-12H H bridge 300v 30a 12A1000 PDF

    CM50TF-12H

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM50TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. 2 TYP. BvN EvN M F R BwN EwN F R K Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of


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    CM50TF-12H CM50TF-12H PDF

    BUN DIODE

    Abstract: DIODE EVP 28 CM50TF-12H bup transistor
    Text: CM50TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 50 Amperes/600 Volts A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. (2 TYP.) BvN EvN M BwN EwN F R F R K R


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    CM50TF-12H Amperes/600 20-25kHz) BUN DIODE DIODE EVP 28 CM50TF-12H bup transistor PDF

    CM150TF-12H

    Abstract: transistor BU 102
    Text: CM150TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 150 Amperes/600 Volts B D X Q X Q X Z - M5 THD (7 TYP.) Bu P Eu P Bv P Ev P BwP EwP Bu N Eu N Bv N Ev N BwN EwN S N P P P J


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    CM150TF-12H Amperes/600 20-25kHz) Drawi5-7272 CM150TF-12H transistor BU 102 PDF

    BUP 312

    Abstract: bup 313 BUP 312 drawing m4 12h CM75TF-12H
    Text: CM75TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 75 Amperes/600 Volts X A C Q X Q X B uP E uP B vP E vP B wP E wP B uN E uN B vN E vN B wN E wN S N Z - M4 THD (7 TYP.) P P P


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    CM75TF-12H Amperes/600 BUP 312 bup 313 BUP 312 drawing m4 12h CM75TF-12H PDF

    300 volt 5 ampere IGBT a 31

    Abstract: CM100TF-12H aa 118 diode m4 12h
    Text: CM100TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 100 Amperes/600 Volts X A C Q X Q X B uP E uP B vP E vP B wP E wP B uN E uN B vN E vN B wN E wN S N Z - M4 THD (7 TYP.) P P


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    CM100TF-12H Amperes/600 300 volt 5 ampere IGBT a 31 CM100TF-12H aa 118 diode m4 12h PDF

    S5 100 B112 MT RELAY

    Abstract: AMP A047 CONNECTOR VAT300 relay S5 100 B112 transistor b605 A 92 B331 transistor S5 100 B112 RELAY 9F52 transistor b686 A 42 B331 transistor
    Text: Cover VAT300 quick guide 14-09-2007 10:37 Page 1 GE Consumer & Industrial Power Protection GE Consumer & Industrial GE POWER CONTROLS Hornhouse Lane Knowsley Industrial Park Liverpool L33 7YQ VAT300 - User Manual GE POWER CONTROLS IBERICA Marqués de Comillas 1


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    VAT300 VAT300, ST-3450C E-08225 D-50677 F-93601 I-20092 B-9000 C/4566/E S5 100 B112 MT RELAY AMP A047 CONNECTOR VAT300 relay S5 100 B112 transistor b605 A 92 B331 transistor S5 100 B112 RELAY 9F52 transistor b686 A 42 B331 transistor PDF

    VAT300

    Abstract: V24-OP1 V24-OP2 ABB inverter motor fault code norma installation tester xe it27 X022K0 N15K TRANSFORMADORES transformador 220v a 12 v
    Text: Cover VAT300 quick guide 14-09-2007 10:37 Page 1 GE Consumer & Industrial Power Protection GE Consumer & Industrial GE Consumer & Industrial C/o GE Inspection Technologies 129-135 Camp Road St Albans Hertfordshire AL1 5HL, UK VAT300 - Quick Guide GE POWER CONTROLS IBERICA


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    VAT300 475kW U30F31000ES U30F3250ES U30F3320ES U30F3400ES U30F3600ES VAT300 V24-OP1 V24-OP2 ABB inverter motor fault code norma installation tester xe it27 X022K0 N15K TRANSFORMADORES transformador 220v a 12 v PDF

    ERN 1387

    Abstract: heidenhain encoder ern 1387 U20N1K5S PLC S7 200 use encoder U20N0K7S U20N0K2S VAT200 U20X0K7S ACRP10A2H U20N0K4S
    Text: 39584 GE Consumer & Industrial Power Protection GE Consumer & Industrial Power Protection formerly GE Power Controls , a division of GE Consumer & Industrial, is a first class European supplier of low-voltage products including wiring devices, residential and industrial electrical


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    VAT20, VAT200, VAT300 VAT20 VAT200 H-1340 B-9000 C/4601/E/EX ERN 1387 heidenhain encoder ern 1387 U20N1K5S PLC S7 200 use encoder U20N0K7S U20N0K2S U20X0K7S ACRP10A2H U20N0K4S PDF

    NPN Transistor 50A 400V

    Abstract: NPN 400V 40A BUP51 BUP52 bup transistor l82a BUP53 BUp54 LE17 400v 50A Transistor
    Text: SEMELAB BUP 53 NPN MULTI-EPITAXIAL TRANSISTOR MECHANICAL DATA Designed for high energy applications requiring robust fast switching devices D im ensions in m m FEATURES • LOW VCE s>t • FAST SWITCHING • SINGLE CHIP CONSTRUCTION • HIGH SWITCHING CURRENTS


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    25Typ. NPN Transistor 50A 400V NPN 400V 40A BUP51 BUP52 bup transistor l82a BUP53 BUp54 LE17 400v 50A Transistor PDF

    Sot-220

    Abstract: 1121t B1331 BUP42 LE17 npn 10a 800v a1023 S7100
    Text: 3 7E SEMELAB LTD D • B1331A7 G00015S SEMELAB -1 X \ BUP 42 SILICON NPN EPITAXIAL PLANAR MECHANICAL DATA Dimensions in mm 10.3 max. 3.6 p. è L|. « I I 1.3 r 15.8 ¿.5max FEATURES 5 .9 • HIGH BREAKDOWN VOLTAGE min. • HIGH RELIABILITY max. • WIDE AREA OF SAFE OPERATION


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    B1331Ã GQ001SS 55to150Â BUP42 Sot-220 1121t B1331 BUP42 LE17 npn 10a 800v a1023 S7100 PDF

    BUP35

    Abstract: npn 10a 800v LE17
    Text: SEMELAB BUP 35 SILICON NPN EPITAXIAL PLANAR M E C H A N IC A L DATA D im e n sio n s in m m FEATURES • HIGH BREAKDOWN VOLTAGE T 21 mai 12.7 max 1 • WIDE AREA OF SECONDARY BREAKDOWN • VERY FAST SWITCHING • HIGH RELIABILITY U J 1.6 ABSOLUTE MAXIMUM RATINGS


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    BUP35 BUP35 npn 10a 800v LE17 PDF

    Untitled

    Abstract: No abstract text available
    Text: SENELAB LTD 37E » Ô1331Ô7 ODOGlbS b • SMLB SEMELAB DEC !* 4 1°fi7 3 > rw T J t. tt t > BUP 52 oO NPINI MULTI-EPITAXIAL TRANSISTO R Designed for high energy applications requiring robust fast switching devices M E C H A N IC A L D A T A D im e n sio n sm mm


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    BUP35

    Abstract: No abstract text available
    Text: SEMELAB LTD 37E » 0133107 000013b SEIVÌELAB SILICON NPN EPITAXIAL PLANAR MECHANICAL DATA Dimensions in mm 15.2 max- >| FEATURES U— ¿.25 2 k ¿ .1 5 • HIGH BREAKDOWN VOLTAGE i.i T 21 IMI 12.7 mni. • WIDE AREA OF SECONDARY BREAKDOWN • VERY FAST SWITCHING


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    000013b BUP35 BUP35 PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF

    KL SN 102 94v-0

    Abstract: diode EGP 30D circuit diagram of 5kw smps full bridge MELF ZENER DIODE color bands blue y-349 diode GI 2W06G DO-213AB smd diode color marking code 6j 507 SMD TRANSISTOR smd diode marking g2a zener Marking BJ9
    Text: General Instrument / Power Semiconductor Division / I * r .jr > / INTRODUCTION General Instrument Corporation is a world leader in developing technology, systems and product solutions for the interactive delivery o f video and data. G l’s success results


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    e420 dual jfet

    Abstract: AC digital voltmeter using 7107 MPS5010 bf320 JFET BF245 bf246 j201 2n3819 mc6821 ICL7117 VOLTMETER cookbook for ic 555 hall marking code A04 e304 fet
    Text: Component Data Catalog 1987 INTERSIL, INC., 10600 RIDGEVIEW COURT, CUPERTINO, CA 95014 Printed in U.S.A. Copyright 1987, Intersil, Inc., All Rights Reserved ^ GE and 408 996-5000 TWX: 910-338-2014 are registered trademarks of General Electric Company, U.S.A.


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    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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