1771-NOC
Abstract: 1771RTP4 1771-NT1 1771-RTP 1771-niv LOGO AM2 rtd 1771-NR 1771-RTP4 IET Labs 1771 rtp3
Text: AllenĆBradley High Resolution Isolated Analog Modules Cat. No. 1771ĆN Series User Manual Important User Information Because of the variety of uses for the products described in this publication, those responsible for the application and use of these products must satisfy themselves that all necessary steps have been
|
Original
|
1771N
1771UM127B-EN-P
1771-NOC
1771RTP4
1771-NT1
1771-RTP
1771-niv
LOGO AM2 rtd
1771-NR
1771-RTP4
IET Labs
1771 rtp3
|
PDF
|
FTL 8-1
Abstract: FTW 425 TH554 TH480 TH533 TH553 A10720 TH 477 th 351
Text: MAINTENANCE TUBES INDUSTRIAL RF HEATING Radiation-cooled triodes Output power Reference Typical Operating conditions Service Va -Vg1 Ia Ig1 Pgs f Vf If kV V mA mA W MHz V A 4 40 7.5 3.2 - 7.5 3.2 W 170 285 T 50-1 215 330 T 50-2 1580 2400 T 300-1 Cathode C-Telegr.
|
Original
|
|
PDF
|
modicon plc
Abstract: rs-422 db9 modbus PLC5 modem PLC hyperterminal Diode Mark N10 modbus protocol MVI71-MCM RSLOGIX 500 LADDER rslogix 5
Text: MVI71-MCM PLC Platform Modbus Communication Module User Manual January 11, 2005 Please Read This Notice Successful application of this module requires a reasonable working knowledge of the PLC Platform Modbus Communication Module hardware and the application in which the combination is to be used.
|
Original
|
MVI71-MCM
modicon plc
rs-422 db9
modbus
PLC5
modem PLC hyperterminal
Diode Mark N10
modbus protocol
MVI71-MCM
RSLOGIX 500 LADDER
rslogix 5
|
PDF
|
RD91
Abstract: BTW67 DATASHEET SCR 30 A TOP3 BTW69 ih 0565 r
Text: BTW67 and BTW69 Series 50A SCRs STANDARD MAIN FEATURES: A Symbol Value Unit IT RMS 50 A V DRM/VRRM 600 to 1200 V IGT 80 mA G K K G A DESCRIPTION Available in high power packages, the BTW67 / BTW69 Series is suitable in applications where power handling and power dissipation are critical,
|
Original
|
BTW67
BTW69
E81734)
BTW67)
BTW69)
RD91
DATASHEET SCR 30 A TOP3
ih 0565 r
|
PDF
|
RD91 package
Abstract: SCR 30 A TOP3 BTW67 DATASHEET SCR 30 A TOP3 BTW69 JESD97 RD91 motor IG 2200 19 x 00 15 r
Text: BTW67 and BTW69 Series 50A SCRS STANDARD Table 1: Main Features A Symbol Value Unit IT RMS 50 A VDRM/VRRM 600 to 1200 V IGT 80 mA G K K G DESCRIPTION Available in high power packages, the BTW67 / BTW69 Series is suitable in applications where power handling and power dissipation are critical,
|
Original
|
BTW67
BTW69
2500VRMS)
E81734)
BTW67)
BTW69)
RD91 package
SCR 30 A TOP3
DATASHEET SCR 30 A TOP3
JESD97
RD91
motor IG 2200 19 x 00 15 r
|
PDF
|
btw67
Abstract: RD91 package RD91 TOP3
Text: BTW67 and BTW69 Series 50A SCRS STANDARD Table 1: Main Features A Symbol Value Unit IT RMS 50 A VDRM/VRRM 600 to 1200 V IGT 80 mA G K K G DESCRIPTION Available in high power packages, the BTW67 / BTW69 Series is suitable in applications where power handling and power dissipation are critical,
|
Original
|
BTW67
BTW69
2500VRMS)
E81734)
BTW67)
BTW69)
RD91 package
RD91
TOP3
|
PDF
|
PT200 rtd
Abstract: 1797-IRT8 1797-PS2E Ni200 allen bradley cjc PT200 rtd chart 1797-ob4d RTD input irt8 1797IBN16 allen bradley PLC BTR BTW "ladder logic"
Text: FLEX Ex Thermocouple/ RTD/mV Input Module Cat. No. 1797-IRT8 User Manual Important User Information Because of the variety of uses for the products described in this publication, those responsible for the application and use of this control equipment must satisfy themselves that all necessary steps
|
Original
|
1797-IRT8
PT200 rtd
1797-IRT8
1797-PS2E
Ni200
allen bradley cjc
PT200 rtd chart
1797-ob4d
RTD input irt8
1797IBN16
allen bradley PLC BTR BTW "ladder logic"
|
PDF
|
HMT112U6
Abstract: HMT125U6AFP8C-S6
Text: 240pin DDR3 SDRAM Unbuffered DIMMs DDR3 SDRAM Unbuffered DIMMs Based on 1Gb A version HMT164U6AFP R 6C HMT112U6AFP(R)8C HMT112U7AFP(R)8C HMT125U6AFP(R)8C HMT125U7AFP(R)8C * Contents are subject to change without prior notice. Rev. 0.1 / Dec 2008 1 HMT164U6AFP(R)6C
|
Original
|
240pin
HMT164U6AFP
HMT112U6AFP
HMT112U7AFP
HMT125U6AFP
HMT125U7AFP
HMT112U6
HMT125U6
HMT125U6AFP8C-S6
|
PDF
|
AL 2450 DV CHARGER
Abstract: No abstract text available
Text: BTW69-1200N 50 A – 1200 V non insulated SCR thyristor Datasheet - production data Description A G K A K Available in non insulated TOP3 high power package, the BTW69-1200N is suitable for applications where power switching and power dissipation are critical, such as by-pass switch,
|
Original
|
BTW69-1200N
BTW69-1200N
DocID024685
AL 2450 DV CHARGER
|
PDF
|
H5TQ1G83
Abstract: H5TQ1G43 H5TQ1G63 1333F hynix ddr3 CL10 DDR3-1066 DDR3-1333 RTT60PD120 cross reference cmos
Text: H5TQ1G43AFP-xxC H5TQ1G83AFP-xxC H5TQ1G63AFP-xxC 1Gb DDR3 SDRAM Preliminary version H5TQ1G43AFP-xxC H5TQ1G83AFP-xxC H5TQ1G63AFP-xxC * Since DDR3 Specification has not been defined completely yet in JEDEC, this document may contain items under discussion.
|
Original
|
H5TQ1G43AFP-xxC
H5TQ1G83AFP-xxC
H5TQ1G63AFP-xxC
H5TQ1G83
H5TQ1G43
H5TQ1G63
1333F
hynix ddr3
CL10
DDR3-1066
DDR3-1333
RTT60PD120
cross reference cmos
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HY5TQ1G431ZNFP HY5TQ1G831ZNFP HY5TQ1G631ZNFP 1Gb DDR3 SDRAM Preliminary version HY5TQ1G431ZNFP HY5TQ1G831ZNFP HY5TQ1G631ZNFP * Since DDR3 Specification has not been defined completely yet in JEDEC, this document may contain items under discussion. * Contents may be changed at any time without any notice.
|
Original
|
HY5TQ1G431ZNFP
HY5TQ1G831ZNFP
HY5TQ1G631ZNFP
|
PDF
|
Design Guide for DDR3-1066
Abstract: hynix ddr3 PS1314 BC4RD CL10 a12b ddr3 sdram chip 512 mb RTT20 BTW 600 RTT60PU120
Text: HY5TQ1G431ZNFP HY5TQ1G831ZNFP HY5TQ1G631ZNFP 1Gb DDR3 SDRAM Preliminary version HY5TQ1G431ZNFP HY5TQ1G831ZNFP HY5TQ1G631ZNFP * Since DDR3 Specification has not been defined completely yet in JEDEC, this document may contain items under discussion. * Contents may be changed at any time without any notice.
|
Original
|
HY5TQ1G431ZNFP
HY5TQ1G831ZNFP
HY5TQ1G631ZNFP
Design Guide for DDR3-1066
hynix ddr3
PS1314
BC4RD
CL10
a12b
ddr3 sdram chip 512 mb
RTT20
BTW 600
RTT60PU120
|
PDF
|
triacs BTW 30
Abstract: AL 2450 dv triacs BTW 30 800 BTW 67 btw 600 btw 20 450
Text: Æ 7 SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# MEDIUM POWER THYRISTORS & TRIACS < RjooMULggirmiDSS 100 A S T A N D A R D T H Y R IS T O R S P L A S T IC C A S E Tamb = Type '0 VRRM >t s m VDRM See NOTE 30 Arms / Tease = 75°C Tj 16 BTW 68-200 —»-1200
|
OCR Scan
|
200-H
triacs BTW 30
AL 2450 dv
triacs BTW 30 800
BTW 67
btw 600
btw 20 450
|
PDF
|
LDR 03
Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Text: Halbleiter bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren
|
OCR Scan
|
|
PDF
|
|
|
BTW92-600RU
Abstract: BTW92 BTW-92 BTW92-1200R 1303RB BTX81-700R CR18-1203RBA CR18-1103RB CR18-1103RBA 8-903RB
Text: LOW POWER THYRISTORS — 14 to 20A It A V 85°C • tsm |2t 14 A 240 A 290 A2sec T y p e No. d v / d t= 2 0 V / p S d v / d t= 2 0 0 V / p S V CR1 8 -903RB C R 1 8 -10 0 3 R B C R 1 8 -1 1 0 3 R B C R 1 8-1 203RB CRT 8 130 3 R B C R 1 8 -1 4 0 3 R B C R 18 1503R B
|
OCR Scan
|
8-903RB
-1003RB
CR18-1103RB
1203RB
1303RB
CR18-1403RB
1503RB
00V/pS
8-903RBA
8-1003RBA
BTW92-600RU
BTW92
BTW-92
BTW92-1200R
BTX81-700R
CR18-1203RBA
CR18-1103RBA
|
PDF
|
BTW48-600
Abstract: 10-32 UNF 2N681 2N682 2N683 2N685 2N687 2N688 2N689 2N690
Text: S ê s g s th o m s o n GENERAL PURPOSE & INDUSTRIAL ^ 7 # M0ÊlE IlLICTl 3 lM0(gi MEDIUM POWER THYRISTORS & TRIACS < 100 A STANDARD THYRISTORS METAL CASE Tamb = 25-C Type •o V RRM ■t s m 'RM @ VRRM >DM @ V DRM See NOTE (A) 7.4 Arms / Tcase = 90°C 2N 1770— 2N 1778
|
OCR Scan
|
2N681
2N682
2N683
2N685
2N687
2N688
2N689
2N690
TSP1025
250mS-TL
BTW48-600
10-32 UNF
|
PDF
|
BTW45
Abstract: BTW45-400R 800R BTW45-400RU philips 102 s10286 BTW45 Series
Text: H AUER P HI LI PS /D IS CR ET E biz D • bbSB^l 0027377 773 B A P X BTW45 SERIES THYRISTORS Glass-passivated silicon th y ris to rs in m etal envelopes, intended fo r p ow er co n tro l applications. The series consistos o f reverse p o la rity types anode to stud id e n tifie d by a s u ffix R: BTW 45-400R to
|
OCR Scan
|
BTW45
BTW45-400R
1200R.
1000R
1200R
800R
BTW45-400RU
philips 102
s10286
BTW45 Series
|
PDF
|
BTW45
Abstract: BTW45 Series BTW45-400R 600R 800R BTW45-400RU 1200R btw45 600r
Text: H AUER PHILIPS/DISCRETE b'IE D • bb53^3]. 0 0 2 7 3 7 7 77 3 ■ BTW45 SERIES THYRISTORS Glass-passivated silicon th y ris to rs in m etal envelopes, intended fo r p o w e r c o n tro l applications. The series consistos o f reverse p o la rity types anode to stud id e n tifie d by a s u ffix R: BTW 45-400R to
|
OCR Scan
|
BTW45
BTW45-400R
1200R.
1000R
1200R
QG273Ã
BTW45 Series
600R
800R
BTW45-400RU
1200R
btw45 600r
|
PDF
|
RPY 86
Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ
|
OCR Scan
|
|
PDF
|
BTA 600
Abstract: TGAL610 bta 700 triacs btb 15 700 triacs BTW 30 TLC226B BTA 18 800 TGAL608 thomson tgf triacs BTA
Text: SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL MEDIUM POWER THYRISTORS & TRIACS < 100 A METAL CASE FAST SWITCHING THYRISTORS Tam b = 2 5 °C *0 V RRIM V tM I A m ax (V) 't m V DRM V RRM •d m * @ VGT •G ì •h di/dt m ax m ax (mA) m ax (mA) m ax m in ( A / f is )
|
OCR Scan
|
BTA04
BTA06
BTA 600
TGAL610
bta 700
triacs btb 15 700
triacs BTW 30
TLC226B
BTA 18 800
TGAL608
thomson tgf
triacs BTA
|
PDF
|
BTW45-400R
Abstract: 2S44 mml 600 Philips LED 1979 600R 800R ML-100r
Text: N AMER PHILIPS/DISCRETE ObE D • bbSBTBl DOllTSS b BTW45 SERIES T - ^ - iS T THYRISTORS Glass-passivated silicon thyristors in metal envelopes, intended for power control applications. 1200R leS C° nSiStOS ° f reV6rSe P °,aritV WPes anode to stud identified by a suffix R: BTW45-400R to
|
OCR Scan
|
btw45
1200RieS
BTW45-400R
BTW45-400R
1000R
1200R
kb53131
10-Zl
2S44
mml 600
Philips LED 1979
600R
800R
ML-100r
|
PDF
|
Untitled
Abstract: No abstract text available
Text: H AUER PHILIPS/DISCRETE b b S a ^ l 0027377 773 H A P X b'JE » BTW45 SERIES J V THYRISTORS Glass-passivated silicon thyristors in metal envelopes, intended fo r power control applications. The series consistos o f reverse polarity types anode to stud identified by a su ffix R: BTW45-400R to
|
OCR Scan
|
BTW45
BTW45-400R
1200R.
BTW45-400R
1000R
1200R
QDE7362
|
PDF
|
CS "Brown Boveri"
Abstract: BROWN BOVERI BROWN BOVERI cs 1000 MJ 1502 S Brown Boveri btw bts 122 transmitter Bts CS 220 "Brown Boveri" BTW150-2 315A
Text: S iedegekühlte H ochleistungsSendetriode Vapour-C ooled High P ow er T ra n s m ittin g Triode Triode d'ém ission de grande puissance à refroidissem en t par vaporisation d'eau si H a u p td a te n Q u ic k R e fe re n c e D a ta C a ra c té ris tiq u e s p rin c ip a le s
|
OCR Scan
|
1000-kW-Sender.
150-2/BTS
5-12E
CS "Brown Boveri"
BROWN BOVERI
BROWN BOVERI cs 1000
MJ 1502 S
Brown Boveri btw
bts 122
transmitter Bts
CS 220 "Brown Boveri"
BTW150-2
315A
|
PDF
|
IC 7447
Abstract: "halbleiterwerk frankfurt" IC 7495 dioda by 238 SYk 04 vergleichsliste BY 235 D147d IC 7474 ic 74193
Text: eiecrronic Halbleiter-Bauelemente Vergleichsliste Hersteller Bi BA Bi Bi Bi Bi Bi Bi 100 103 106 116 127 147/25 147/50 152 i E S 8 Ti 8 T. T Se B i 152 Hl B i 170 B i 177 B i 178 B i 1«B BA 187 B i 204 B i 216 B i 217 B i 216 B i 219 B i 220 BA 221 B i 222
|
OCR Scan
|
|
PDF
|