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    Infineon Technologies AG BSS806NH6327XTSA1

    MOSFET N-CH 20V 2.3A SOT23-3
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    DigiKey BSS806NH6327XTSA1 Digi-Reel 500,930 1
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    BSS806NH6327XTSA1 Cut Tape 500,930 1
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    Verical BSS806NH6327XTSA1 45,000 3,000
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    BSS806NH6327XTSA1 3,000 175
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    Mouser Electronics BSS806NH6327XTSA1 44,935
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    Arrow Electronics BSS806NH6327XTSA1 45,000 14 Weeks 3,000
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    EBV Elektronik BSS806NH6327XTSA1 5,604,000 15 Weeks 3,000
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    Farnell BSS806NH6327XTSA1 Reel 12,598 21 Weeks, 1 Days 500
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    BSS806NH6327XTSA1 Cut Tape 12,598 21 Weeks, 1 Days 5
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    BSS806NH6327XTSA1 Reel 21 Weeks, 1 Days 3,000
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    RS BSS806NH6327XTSA1 Reel 4,250 3,000
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    BSS806NH6327XTSA1 Reel 4,250 250
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    Avnet Americas BSS806NH6327XTSA1 Reel 14 Weeks 9,000
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    TME BSS806NH6327XTSA1 4,769 1
    • 1 $0.421
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    Chip 1 Exchange BSS806NH6327XTSA1 368,305
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    Chip-Germany GmbH BSS806NH6327XTSA1 Reel 39,000 3,000
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    Chip1Stop BSS806NH6327XTSA1 Cut Tape 3,000
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    Maritex BSS806NH6327XTSA1 75
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    New Advantage Corporation BSS806NH6327XTSA1 4,482,000 1
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    Win Source Electronics BSS806NH6327XTSA1 78,750
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    Infineon Technologies AG BSS806NEH6327XTSA1

    MOSFET N-CH 20V 2.3A SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BSS806NEH6327XTSA1 Cut Tape 51,782 1
    • 1 $0.4
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    BSS806NEH6327XTSA1 Digi-Reel 51,782 1
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    BSS806NEH6327XTSA1 Reel 51,000 3,000
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    Verical BSS806NEH6327XTSA1 66,000 3,000
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    BSS806NEH6327XTSA1 33,000 5,515
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    BSS806NEH6327XTSA1 16,279 1,021
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    BSS806NEH6327XTSA1 7,200 300
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    Mouser Electronics BSS806NEH6327XTSA1 26,803
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    Arrow Electronics BSS806NEH6327XTSA1 66,000 14 Weeks 3,000
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    BSS806NEH6327XTSA1 Cut Strips 57 14 Weeks 1
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    EBV Elektronik BSS806NEH6327XTSA1 2,103,000 15 Weeks 3,000
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    Farnell BSS806NEH6327XTSA1 Cut Tape 25,680 21 Weeks, 1 Days 5
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    BSS806NEH6327XTSA1 Reel 25,680 21 Weeks, 1 Days 500
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    BSS806NEH6327XTSA1 Reel 21 Weeks, 1 Days 3,000
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    RS BSS806NEH6327XTSA1 Reel 11,250 250
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    BSS806NEH6327XTSA1 Reel 11,250 3,000
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    Rochester Electronics BSS806NEH6327XTSA1 36,000 1
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    Avnet Americas BSS806NEH6327XTSA1 Reel 15,000 14 Weeks 3,000
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    BSS806NEH6327XTSA1 Reel 12,000 14 Weeks 3,000
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    BSS806NEH6327XTSA1 Ammo Pack 16 Weeks, 3 Days 1
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    TME BSS806NEH6327XTSA1 5,271 1
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    Bristol Electronics BSS806NEH6327XTSA1 4,995
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    Chip1Stop BSS806NEH6327XTSA1 Cut Tape 7,200
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    Maritex BSS806NEH6327XTSA1 8
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    New Advantage Corporation BSS806NEH6327XTSA1 1,674,000 1
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    Essentra Components CBSS-8-01

    BRD SPT REST MNT SNAP LCK 10.9MM
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    DigiKey CBSS-8-01 Bulk 785 1
    • 1 $0.67
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    Mouser Electronics CBSS-8-01 386
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    Farnell CBSS-8-01 Pack 9 Weeks, 1 Days 1
    • 1 £3.4
    • 10 £3.4
    • 100 £2.62
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    Infineon Technologies AG BSS806NL6327HTSA1

    MOSFET N-CH 20V 2.3A SOT23-3
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    DigiKey BSS806NL6327HTSA1 Reel 3,000
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    MOSLEADER BSS806NH6327XTSA1-ML

    N 20V SOT-23
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    DigiKey BSS806NH6327XTSA1-ML Reel 200
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    BSS80 Datasheets (43)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BSS80 Infineon Technologies PNP Silicon Switching Transistors Original PDF
    BSS80 Kexin PNP Silicon Switching Transistors Original PDF
    BSS80 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BSS80 Siemens PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) Original PDF
    BSS80 TY Semiconductor PNP Silicon Switching Transistors - SOT-23 Original PDF
    BSS80 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BSS80 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BSS80 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BSS80 Siemens Components for Surface Mounting 1983/4 Scan PDF
    BSS806N Infineon Technologies N-Channel Small Signal MOSFETs (20V - 800V); Package: PG-SOT23-3; Package: SOT-23; VDS (max): 20.0 V; RDS (on) (max) (@10V): -; RDS (on) (max) (@4.5V): -; RDS (on) (max) (@2.5V): 57.0 mOhm; Original PDF
    BSS806NEH6327XTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 20V 2.3A SOT23 Original PDF
    BSS806NH6327 Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 2.3A SOT23 Original PDF
    BSS806N H6327 TY Semiconductor MOSFET N-CH 20V 2.3A - SOT-23 Original PDF
    BSS806NH6327XTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 20V 2.3A SOT23 Original PDF
    BSS806NL6327HTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 20V 2.3A SOT23 Original PDF
    BSS80B Infineon Technologies PNP Silicon Switching Transistor Original PDF
    BSS80B Infineon Technologies PNP Silicon Switching Transistor with high current gain Original PDF
    BSS80B Unknown Original PDF
    BSS80B Siemens Cross Reference Guide 1998 Original PDF
    BSS80B Siemens PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) Original PDF

    BSS80 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Product specification BSS806N OptiMOS 2 Small-Signal-Transistor Product Summary Features 20 V V GS=2.5 V 57 mΩ V GS=1.8 V 82 V DS • N-channel R DS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 2.3 ID A • Avalanche rated • Qualified according to AEC Q101


    Original
    PDF BSS806N PG-SOT23 IEC61249-2-21 H6327:

    Untitled

    Abstract: No abstract text available
    Text: SMD Type SMD Type Transistors IC Product specification BSS80,BSS82 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low collector-emitter saturation voltage. 0.55 High DC current gain: 0.1mA to 500 mA. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1


    Original
    PDF BSS80 BSS82 OT-23 BSS80

    BSS81C

    Abstract: BSS79 BSS79B BSS79C BSS80 BSS81 BSS81B BSS82
    Text: BSS79, BSS81 NPN Silicon Switching Transistors 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary types: BSS80, BSS82 PNP 2 1 Type Marking Pin Configuration BSS79B CEs 1=B 2=E 3=C SOT23 BSS79C CFs 1=B 2=E


    Original
    PDF BSS79, BSS81 BSS80, BSS82 BSS79B BSS79C BSS81B BSS81C BSS79 BSS81C BSS79 BSS79B BSS79C BSS80 BSS81 BSS81B BSS82

    Untitled

    Abstract: No abstract text available
    Text: BSS79, BSS81 NPN Silicon Switching Transistors 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary types: BSS80, BSS82 PNP 2 1 Type Marking Pin Configuration BSS79B CEs 1=B 2=E 3=C SOT23 BSS79C CFs 1=B 2=E


    Original
    PDF BSS79, BSS81 BSS80, BSS82 VPS05161 BSS79B BSS79C BSS81B BSS81C BSS79

    Untitled

    Abstract: No abstract text available
    Text: PART OBSOLETE SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS ISSUE 2 – SEPTEMBER 95 ✪ BSS80B BSS80C PARTMARKING DETAIL — BSS80B - CH BSS80C - CJ C E B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage


    Original
    PDF BSS80B BSS80C BSS80C -10mA -10mA

    Untitled

    Abstract: No abstract text available
    Text: BSS806NE OptiMOS 2 Small-Signal-Transistor Product Summary Features VDS • N-channel RDS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 20 V VGS=2.5 V 57 mW VGS=1.8 V 82 ID 2.3 A • ESD protected • Avalanche rated • Qualified according to AEC Q101


    Original
    PDF BSS806NE PG-SOT23 IEC61249-2-21 H6327:

    Untitled

    Abstract: No abstract text available
    Text: BSS80, BSS82 PNP Silicon Switching Transistors 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary types: BSS79, BSS81 NPN 2 1 Type Marking Pin Configuration BSS80B CHs 1=B 2=E 3=C SOT23 BSS80C CJs 1=B 2=E


    Original
    PDF BSS80, BSS82 BSS79, BSS81 VPS05161 BSS80B BSS80C BSS82B BSS82C BSS80

    Untitled

    Abstract: No abstract text available
    Text: BSS806N OptiMOS 2 Small-Signal-Transistor Product Summary Features 20 V V GS=2.5 V 57 mΩ V GS=1.8 V 82 V DS • N-channel R DS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 2.3 ID A • Avalanche rated • Qualified according to AEC Q101


    Original
    PDF BSS806N PG-SOT23 IEC61249-2-21 H6327:

    marking CFs sot-23

    Abstract: marking BSs sot23 marking BSs sot-23 BSS80 SOT-23 BSS 81 SOT23
    Text: BSS 79, BSS 81 NPN Silicon Switching Transistors 3 • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary types: BSS80, BSS 82 PNP 2 1 Type Marking Pin Configuration BSS 79B CEs 1=B 2=E 3=C SOT-23 BSS 79C


    Original
    PDF BSS80, OT-23 VPS05161 EHP00677 EHP00678 Nov-02-1999 marking CFs sot-23 marking BSs sot23 marking BSs sot-23 BSS80 SOT-23 BSS 81 SOT23

    MV SOT23

    Abstract: partmarking 6 Cc PARTMARKING at BSS80B BSS80C DSA003681
    Text: SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS ISSUE 2 – SEPTEMBER 95 ✪ BSS80B BSS80C PARTMARKING DETAIL — BSS80B - CH BSS80C - CJ C E B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage


    Original
    PDF BSS80B BSS80C BSS80B BSS80C 150oC -150mA -10mA MV SOT23 partmarking 6 Cc PARTMARKING at DSA003681

    BSS80B

    Abstract: BSS79 BSS80 BSS80C BSS81 BSS82 BSS82B BSS82C marking BSs sot23
    Text: BSS80, BSS82 PNP Silicon Switching Transistors 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary types: BSS79, BSS81 NPN 2 1 Type Marking Pin Configuration BSS80B CHs 1=B 2=E 3=C SOT23 BSS80C CJs 1=B 2=E


    Original
    PDF BSS80, BSS82 BSS79, BSS81 BSS80B BSS80C BSS82B BSS82C BSS80 BSS80B BSS79 BSS80 BSS80C BSS81 BSS82 BSS82B BSS82C marking BSs sot23

    BSS806N

    Abstract: JESD22-A114 L6327 PG-SOT23 dc-005 2.0mm
    Text: BSS806N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 20 V V GS=2.5 V 57 mΩ V GS=1.8 V 82 ID 2.3 A • Avalanche rated • Qualified according to AEC Q101


    Original
    PDF BSS806N PG-SOT23 L6327: BSS806N JESD22-A114 L6327 PG-SOT23 dc-005 2.0mm

    BSS80

    Abstract: BSS82 SMD 8.2B
    Text: Transistors IC SMD Type PNP Silicon Switching Transistors BSS80,BSS82 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low collector-emitter saturation voltage. 0.55 High DC current gain: 0.1mA to 500 mA. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1


    Original
    PDF BSS80 BSS82 OT-23 BSS80 BSS82 SMD 8.2B

    s8150

    Abstract: No abstract text available
    Text: BSS806N OptiMOS 2 Small-Signal-Transistor Product Summary Features 20 V V GS=2.5 V 57 mΩ V GS=1.8 V 82 V DS • N-channel R DS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 2.3 ID A • Avalanche rated • Qualified according to AEC Q101


    Original
    PDF BSS806N IEC61249-2-21 PG-SOT23 H6327: s8150

    Untitled

    Abstract: No abstract text available
    Text: BSS806N OptiMOS 2 Small-Signal-Transistor Product Summary Features 20 V V GS=2.5 V 57 mΩ V GS=1.8 V 82 V DS • N-channel R DS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 2.3 ID A • Avalanche rated • Qualified according to AEC Q101


    Original
    PDF BSS806N PG-SOT23 IEC61249-2-21 L6327:

    BSS79

    Abstract: No abstract text available
    Text: BSS79, BSS81 NPN Silicon Switching Transistors 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary types: BSS80, BSS82 PNP 2 1 Type Marking Pin Configuration BSS79B CEs 1=B 2=E 3=C SOT23 BSS79C CFs 1=B 2=E


    Original
    PDF BSS79, BSS81 BSS80, BSS82 VPS05161 BSS79B BSS79C BSS81B BSS81C BSS79

    Untitled

    Abstract: No abstract text available
    Text: BSS806NE OptiMOS 2 Small-Signal-Transistor Product Summary Features VDS • N-channel RDS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 20 V VGS=2.5 V 57 mW VGS=1.8 V 82 ID 2.3 A • ESD protected • Avalanche rated • Qualified according to AEC Q101


    Original
    PDF BSS806NE PG-SOT23 IEC61249-2-21 H6327:

    BSS806N

    Abstract: L6327 PG-SOT23
    Text: BSS806N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 20 V V GS=2.5 V 57 mΩ V GS=1.8 V 82 ID 2.3 A • Avalanche rated • Qualified according to AEC Q101


    Original
    PDF BSS806N PG-SOT23 L6327: BSS806N L6327 PG-SOT23

    Untitled

    Abstract: No abstract text available
    Text: BSS80, BSS82 PNP Silicon Switching Transistors 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary types: BSS79, BSS81 NPN 2 1 Type Marking Pin Configuration BSS80B CHs 1=B 2=E 3=C SOT23 BSS80C CJs 1=B 2=E


    Original
    PDF BSS80, BSS82 BSS79, BSS81 VPS05161 BSS80B BSS80C BSS82B BSS82C BSS80

    BSS79

    Abstract: BSS80 BSS80B BSS80C BSS81 BSS82 BSS82B BSS82C
    Text: BSS80, BSS82 PNP Silicon Switching Transistors 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary types: BSS79, BSS81 NPN 2 1 Type Marking Pin Configuration BSS80B CHs 1=B 2=E 3=C SOT23 BSS80C CJs 1=B 2=E


    Original
    PDF BSS80, BSS82 BSS79, BSS81 BSS80B BSS80C BSS82B BSS82C BSS80 BSS79 BSS80 BSS80B BSS80C BSS81 BSS82 BSS82B BSS82C

    Untitled

    Abstract: No abstract text available
    Text: BSS80B BSS80C SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS BSS80B - CH BSS80C - CJ ABSOLUTE M A X IM U M RATINGS P A R A M E TE R SYMBOL C ollector-B ase V o lta g e V CBO -6 0 V C o llec to r-E m itte r V o ltag e V CEO -4 0 V E m itter-B ase V o ltag e


    OCR Scan
    PDF BSS80B BSS80C BSS80B BSS80C 300jiS.

    Untitled

    Abstract: No abstract text available
    Text: BSS80B BSS80C SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS ISSU E 2 - SEPTEM BER 95 Q_ PARTMARKING DETAIL — BSS80B - CH B S S8 0 C - CJ ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BOL VALUE Collector-Base Voltage Collector-Emitter Voltage V CBO V CEO


    OCR Scan
    PDF BSS80B BSS80C BSS80C -10mA -150mA 150mA

    BDP 284

    Abstract: BAV 217 Q62702-C2259 BAT 545 Q62702F1240 Q62702-A773 bdp 497 Q62702-C944 Q62702-D339 Q62702-C1529
    Text: SIEMENS List of Types in Alphanumerical Order Type Ordering Code Page BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-01 BAR 15-01 BAR 16-01 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05


    OCR Scan
    PDF 3-03W 4-03W 5-03W Q62702-A829 Q62702-A859 Q62702-A950 Q62702-A952 Q62702-A608 Q62702-A718 Q62702-A687 BDP 284 BAV 217 Q62702-C2259 BAT 545 Q62702F1240 Q62702-A773 bdp 497 Q62702-C944 Q62702-D339 Q62702-C1529

    MLL34

    Abstract: m6 sot-23 pinout sot-23 Marking KN bk sot 23 marking 16 SOT-143 MOTOROLA Cross Reference sot23 MMBT8599 motorola transistor dpak marking BC817-25L BC817-40L
    Text: HOTOROLA SC XSTRS/R F HbZ D • b3b?2S4 DDTbSGl 3 ■ M O T b T ^ X l-O S Bipolar Transistors General-Purpose Transistors Pinout: 1-Base, 2-Em itter, 3-Collector Devices are listed in order of descending breakdown voltage. Marking V(BR)CEO Min ■»FE Max


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    PDF BC846AT BC846BT BC817-16L BC817-25L BC817-40L BC847AT BC847BT BC847CT BCX70KL BCW72L MLL34 m6 sot-23 pinout sot-23 Marking KN bk sot 23 marking 16 SOT-143 MOTOROLA Cross Reference sot23 MMBT8599 motorola transistor dpak marking