BSP78
Abstract: TRANSISTOR BSP 149 scr tic 118d tic 118d lamp 12v 21w HL 941 BSP75 bts933
Text: HL Application Note BSP 76, BSP 77, BSP 78, BTS 118D, BTS 134D, BTS 142 D1 The second generation of the HITFET family offers low RDS on and restart function in the SOT223 and D-Pak with low-input current drive Benno Köppl Introduction The age of Siemens Smart Power low-side switches began with the introduction of the
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OT223
BSP78
TRANSISTOR BSP 149
scr tic 118d
tic 118d
lamp 12v 21w
HL 941
BSP75
bts933
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4142N
Abstract: bsp mosfet BSP550
Text: Deltasheet BTS 4142N – BSP 550 Smart Power High-Side-Switch One Channel: 1 x 200mΩ Features • Short-circuit protection • Current limitation Product Summary Overvoltage protection Operating voltage On-state resistance Vbb AZ Vbb(on) RON BSP 550 48
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4142N
4142N
bsp mosfet
BSP550
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BSP 450
Abstract: No abstract text available
Text: Deltasheet BTS 4141N – BSP 450 Smart Power High-Side-Switch One Channel: 1 x 200mΩ Features • Short-circuit protection • Current limitation Product Summary Overvoltage protection Operating voltage On-state resistance Vbb AZ Vbb(on) RON BSP 450 48
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4141N
4141N
BSP 450
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pin diagram of bts 149
Abstract: BSP 76 "pin compatible" ANPS027E 13450M bsp mosfet
Text: HL Application Note BSP 75, BSP 75A Monolithic Smart Power Low-Side Switch extends the HITFET family in the low power area Claus Preuschoff Introduction The introduction of the TEMPFET® TEMperature Protected FET was the start of the era of Siemens Smart Power low side switches. The integration of further protective functions,
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ANPS027E
pin diagram of bts 149
BSP 76 "pin compatible"
13450M
bsp mosfet
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fully protected p channel mosfet
Abstract: BSP 76 "pin compatible" bsp mosfet POWER SUPPLY BTS SIEMENS BSP 78 HITFET Car Battery 12V short circuit
Text: HL Application Note BSP 75, BSP 75A Monolithic Smart Power Low-Side Switch extends the HITFET family in the low power area Claus Preuschoff Introduction The introduction of the TEMPFET® TEMperature Protected FET was the start of the era of Siemens Smart Power low side switches. The integration of further protective functions,
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Anps027e
fully protected p channel mosfet
BSP 76 "pin compatible"
bsp mosfet
POWER SUPPLY BTS SIEMENS
BSP 78
HITFET
Car Battery 12V short circuit
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4142N
Abstract: No abstract text available
Text: Deltasheet BTS 4142N – BSP 550 Smart Power High-Side-Switch One Channel: 1 x 200mΩ Ω Features • Short-circuit protection • Current limitation • Overload protection Product Summary Overvoltage protection Operating voltage On-state resistance Vbb AZ
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4142N
4142N
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Q67000-S311
Abstract: No abstract text available
Text: Mini PROFET BSP 550 MiniPROFET • High-side switch • Short-circuit protection • Input protection • Overtemperature protection with hysteresis • Overload protection • Overvoltage protection • Switching inductive load • Clamp of negative output voltage with inductive loads
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Q67000-S311
Q67000-S311
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Q67000-S266
Abstract: MOSFET 450
Text: Mini PROFET BSP 450 MiniPROFET • High-side switch • Short-circuit protection • Input protection • Overtemperature protection with hysteresis • Overload protection • Overvoltage protection • Switching inductive load • Clamp of negative output voltage with inductive loads
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Q67000-S266
Q67000-S266
MOSFET 450
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BSP 300 "pin compatible"
Abstract: PROFET Q67000-S271 mosfet 452
Text: Mini PROFET BSP 452 MiniPROFET • High-side switch • Short-circuit protection • Input protection • Overtemperature protection with hysteresis • Overload protection • Overvoltage protection • Switching inductive load • Clamp of negative output voltage with inductive loads
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Q67000-S271
BSP 300 "pin compatible"
PROFET
Q67000-S271
mosfet 452
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Untitled
Abstract: No abstract text available
Text: BSP 129 SIPMOS N Channel MOSFET 32E D • fl23b320 GG171Q3 5 « S I R Preliminary Data • • • • • SIEMENS/ SPCL-, SEMICONDS SIPMOS - depletion mode Drain-source voltage Continuous drain current Drain-source on-resistance Total power dissipation Vis = 240V
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fl23b320
GG171Q3
Q62702-S510
00A/JUS
00A//JS
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Untitled
Abstract: No abstract text available
Text: BEE D • ¿123b32Q 00170^3 b « S I P T'3 SIPMOS P Channel MOSFET SIEMENS/ SPCL-, SEMICONDS BSP 92 _ Preliminary Data • SIPMOS - enhancement mode • Drain-source voltage Vfcj = -240V • Continuous drain current / o = -0.18A • Draln-source on-resistance
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123b32Q
-240V
Q62702-S653
23b320
00170e
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BSS87
Abstract: BSP315 SOT223 BSP171 BSS125
Text: SIPMOS For complete package outlines, refer to pages PO-1 through PO-6 Low Power MOSFETs Type M axim um Ratings N = N Channel P = P Channel BSP17 BSP88 BSP89 BSP92 BSP 125 BSP129* BSP135* BSP149* BSP171 BSP295 BSP296 BSP297 BSP298 BSP299 BSP315 BSP316 BSP317
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BSP17
BSP88
BSP89
BSP92
BSP129*
BSP135*
BSP149*
BSP171
BSP295
BSP296
BSS87
BSP315 SOT223
BSS125
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Untitled
Abstract: No abstract text available
Text: 32E D m fl23b320 0017060 2 H S I P SIPMOS N Channel MOSFET f * ' 5*1 ^ BSP 89 SIEMENS/ SPCL-, SEMICONDS Preliminary Data • SIPMOS - enhancement mode • Draln-source voltage • Continuous drain current • Draln-source on-resistance • Total power dissipation
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fl23b320
Q67002-S652
23b320
T-39-05
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Untitled
Abstract: No abstract text available
Text: BSE I • ÖS3b3Ea CJ017114 T SIPMOS N Channel MOSFET ISIP r - t f - o s - BSP 296 SIEMENS/ SPCL-. SEMICONDS • SIPMOS - enhancement mode • Draln-source voltage Vfo = 100V • Continuous drain current / „ = 1.0A • Drain-source on-resistance • Total power dissipation
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CJ017114
Q67000-S067
23b320
QCJ1711Ã
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BSP 452
Abstract: pumpe SIEMENS MOSFET application mosfet 452
Text: SIEMENS Mini PROFET BSP 452 MiniPROFET • • • • • • • • • • • • High-side switch Short-circuit protection Input protection Overtemperature protection with hysteresis Overload protection Overvoltage protection Switching inductive load
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Q67000-S271
BSP 452
pumpe
SIEMENS MOSFET application
mosfet 452
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n mosfet depletion 600V
Abstract: No abstract text available
Text: SIPMOS N Channel MOSFET BSP 135 Preliminary Data • SIPMOS - depletion mode • Drain-source voltage • Continuous drain current Vfes = 600V I B = 0.100A • Drain-source on-resistance • Total power dissipation flDS on = 60Q P0 = 1,5W ( Type Marking Ordering code for
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Q62702-S655
56tance
00A/f/s
00A//JS
n mosfet depletion 600V
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Untitled
Abstract: No abstract text available
Text: • B535b05 Q0cÎS6ci4 S4b SIEMENS Mini PROFETÒ BSP 550 MiniPROFET • High-side switch • Short-circuit protection • Input protection • Overtemperature protection with hysteresis • Overload protection • Overvoltage protection • Switching inductive load
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B535b05
Q67000-S311
fl235bOS
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Untitled
Abstract: No abstract text available
Text: 32E D • Ô53b320 □ 01711=1 1 ■ SIP BSP 297 SIPMOS N Channel MOSFET SIEMENS/ SPCLi SEMICONDS T - M - O S * • SIPMOS - enhancement mode • Drain-source voltage Vis = 200V • Continuous drain current l 0 - 0.6A • Drain-source on-resistance fWon> = 2 .0 0
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53b320
Q67000-S068
A23b320
T-39-05
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BSP450
Abstract: GGfllb3b Q67000-S266
Text: ô23Sb05 GGfllbBti ET? SIEM EN S BSP 450 MiniSmart • • • • • • • • • • • • High-side switch Short-circuit protection Input protection Overtemperature protection with hysteresis Overload protection Overvoltage protection Switching inductive load
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23Sb05
Q67000-S266
23SLDS
101520z
BSP450
GGfllb3b
Q67000-S266
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Untitled
Abstract: No abstract text available
Text: 32E D • Ö23b32ü 0017107 s m s i p BSP 149 SIPMOS N Channel MOSFET T - 3 *7 Preliminary Data • SIPMOS - depletion mode • Drain-source voltage • Continuous drain current • Drain-source on-resistance • Total power dissipation Type M arking O rdering code for
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23b32Ã
Q67000-S071
00A//Ã
-100V
00A/MS
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BSP-125
Abstract: bsp mosfet S654 diode
Text: SIPMOS N Channel MOSFET BSP 125 Preliminary Data • SIPMOS - enhancem ent m ode • D rain-source voltage • C ontinuous drain current Vbs = 600V l D = .110A • D raln-source on-reslstance • Total pow er dissipation flbs on> = 4 5 0 PD = 1.5W Type M arking
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62702-S654
BSP-125
bsp mosfet
S654 diode
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Untitled
Abstract: No abstract text available
Text: BSP 92 SIPMOS P Channel MOSFET Preliminary Data • SIPMOS - enhancem ent m ode • D rain-source voltage Vfes = -240V • C ontin uou s drain current / D = -0.18A • D rain-source on-resistance ffcs on = 2 0 0 • Total pow er dissipation PD = 1.5W t Type
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-240V
Q62702-S653
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Untitled
Abstract: No abstract text available
Text: BEE D • Ö23b320 Q017124 2 ■ SIP SIPMOS N Channel MOSFET SIEMENS/ SPCLi SEMICONDS • • • • • BSP 315 T ~ 2 * 1 'O S ' SIPMOS - enhancement mode Drain-source voltage = -50V Continuous drain current l 0 - -1.0A Draln-souros on-reslstance Ros<on> = .9 5 0
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23b320
Q017124
Q6700Q-S027
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Untitled
Abstract: No abstract text available
Text: 3SE D • Ö53b320 Q017QÛ3 3 Hi SIP SIPMOS N Channel MOSFET T - 2 1 ' -O S ' SIEMENS/ SPCLi SEMICONDS BSP 88 Preliminary Data • • • • • SIPMOS - enhancement mode Drain-source voltage Vos = 240V Continuous drain current l B = 0.29A Drain-source on-resistance
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53b320
Q017QÃ
Q67000-S070
23b32Ã
T-39-05
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