BSC020N03LS G Search Results
BSC020N03LS G Price and Stock
Infineon Technologies AG BSC020N03LSGATMA1MOSFET N-CH 30V 28A/100A TDSON |
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BSC020N03LSGATMA1 | Digi-Reel | 17,249 | 1 |
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BSC020N03LSGATMA1 | Reel | 5,000 | 14 Weeks | 5,000 |
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BSC020N03LSGATMA1 | 3,018 |
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BSC020N03LSGATMA1 | 24,300 | 37 |
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BSC020N03LSGATMA1 | 10,000 | 14 Weeks | 5,000 |
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BSC020N03LSGATMA1 | Bulk | 1 |
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BSC020N03LSGATMA1 | 1 |
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BSC020N03LSGATMA1 | Cut Tape | 24,300 |
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BSC020N03LSGATMA1 | 15 Weeks | 5,000 |
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BSC020N03LSGATMA1 | 23,100 |
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Infineon Technologies AG BSC020N03LSGATMA2LV POWER MOS |
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BSC020N03LSGATMA2 | Reel |
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BSC020N03LSGATMA2 | Reel | 5,000 |
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Infineon Technologies AG BSC020N03LS GMOSFETs N-Ch 30V 100A TDSON-8 OptiMOS 3 |
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BSC020N03LS G | 3,600 |
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BSC020N03LS G | 49 |
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Infineon Technologies AG BSC020N03LSGXTMOSFETs N-Ch 30V 100A TDSON-8 OptiMOS 3 |
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BSC020N03LSGXT |
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Infineon Technologies AG BSC020N03LSG100 A, 30 V, 0.0029 OHM, N-CHANNEL, SI, POWER, MOSFET |
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BSC020N03LSG | 85 |
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BSC020N03LS G Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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BSC020N03LS G |
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N-Channel MOSFETs (20V - 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.0 mOhm; RDS (on) (max) (@4.5V): 2.9 mOhm; ID (max): 100.0 A; | Original | |||
BSC020N03LSGATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 100A TDSON-8 | Original |
BSC020N03LS G Datasheets Context Search
Catalog Datasheet | MFG & Type | Document Tags | |
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020N03LS
Abstract: BSC020N03LS BSC020N03LS G 020N03L JESD22
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Original |
BSC020N03LS 020N03LS 020N03LS BSC020N03LS G 020N03L JESD22 | |
20N03LS
Abstract: 20n03l
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Original |
BSC020N03LS 20N03LS 20N03LS 20n03l |