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    BS616UV8011DC Search Results

    BS616UV8011DC Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BS616UV8011DC Brilliance Semiconductor Ultra Low Power/Voltage CMOS SRAM 512K x 16 bit Original PDF
    BS616UV8011DC-10 Brilliance Semiconductor Ultra Low Power/Voltage CMOS SRAM Original PDF
    BS616UV8011DC-70 Brilliance Semiconductor Ultra Low Power/Voltage CMOS SRAM Original PDF

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    a10 bga-9

    Abstract: BS616UV8011 BS616UV8011BC BS616UV8011BI BS616UV8011DC BS616UV8011DI BS616UV8011FC BS616UV8011FI 100PF
    Text: Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit BSI BS616UV8011 „ DESCRIPTION „ FEATURES • Ultra low operation voltage : 1.8 ~ 2.3V • Ultra low power consumption : Vcc = 2.0V C-grade: 20mA Max. operating current I-grade : 25mA (Max.) operating current


    Original     		PDF BS616UV8011 100ns x8/x16 BS616UV8011 R0201-BS616UV8011 a10 bga-9 BS616UV8011BC BS616UV8011BI BS616UV8011DC BS616UV8011DI BS616UV8011FC BS616UV8011FI 100PF