TO-92-18RM
Abstract: BS107 VN2010L TO-92-18R
Text: VN2010L/BS107 Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) VN2010L 200 BS107 rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 Features Benefits Applications
|
Original
|
PDF
|
VN2010L/BS107
VN2010L
BS107
O226AA)
P-38283--Rev.
TO-92-18RM
BS107
VN2010L
TO-92-18R
|
BS107
Abstract: VN2010L
Text: VN2010L/BS107 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VN2010L 200 BS107 rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 Features Benefits Applications D D
|
Original
|
PDF
|
VN2010L/BS107
BS107
VN2010L
O-226AA)
P-38283--Rev.
15-Aug-94
BS107
VN2010L
|
equivalent of BS107
Abstract: BS107 application BS107 vn2010l
Text: VN2010L/BS107 N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) VN2010L 200 BS107 rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 Features Benefits Applications D D D
|
Original
|
PDF
|
VN2010L/BS107
BS107
VN2010L
O-226AA)
P-38283--Rev.
15-Aug-94
equivalent of BS107
BS107 application
BS107
vn2010l
|
BS107
Abstract: BS107A BS107AG BS107ARL1 BS107ARLRM BS107ARLRP BS107G BS107RL1 BS107RLRA
Text: BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N−Channel TO−92 Features http://onsemi.com • Pb−Free Package is Available* 250 mA, 200 V RDS on = 14 W (BS107) RDS(on) = 6.4 W (BS107A) N−Channel MAXIMUM RATINGS Rating Drain −Source Voltage
|
Original
|
PDF
|
BS107,
BS107A
BS107)
BS107A)
BS107/D
BS107
BS107A
BS107AG
BS107ARL1
BS107ARLRM
BS107ARLRP
BS107G
BS107RL1
BS107RLRA
|
BC107 characteristic
Abstract: BC107 to92 BS107 BC107 to-92
Text: BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N−Channel TO−92 Features http://onsemi.com • Pb−Free Package is Available* 250 mA, 200 V RDS on = 14 W (BS107) RDS(on) = 6.4 W (BS107A) N−Channel MAXIMUM RATINGS Rating Drain −Source Voltage
|
Original
|
PDF
|
BS107,
BS107A
BS107)
BS107A)
BS107/D
BC107 characteristic
BC107 to92
BS107
BC107 to-92
|
VN2010L
Abstract: BS107
Text: VN2010L/BS107 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VN2010L 200 BS107 rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 Features Benefits Applications D D
|
Original
|
PDF
|
VN2010L/BS107
BS107
VN2010L
O-226AA)
P-38283--Rev.
15-Aug-94
VN2010L
BS107
|
equivalent of BS107
Abstract: BS107 VN2010L BS107 application
Text: VN2010L/BS107 Vishay Siliconix N-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 VN2010L 200 BS107 D D D D D Low On-Resistance: 6 W
|
Original
|
PDF
|
VN2010L/BS107
VN2010L
BS107
O-226AA
O-92-18RM
18-Jul-08
equivalent of BS107
BS107
VN2010L
BS107 application
|
BS107 MOTOROLA
Abstract: BS107A BS107
Text: MOTOROLA Order this document by BS107/D SEMICONDUCTOR TECHNICAL DATA TMOS Switching N–Channel — Enhancement BS107 BS107A 1 DRAIN 2 GATE 3 SOURCE MAXIMUM RATINGS Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs
|
Original
|
PDF
|
BS107/D
BS107
BS107A
226AA)
BS107 MOTOROLA
BS107A
BS107
|
BS107
Abstract: PPAP MANUAL BS107AG BS107A BS107ARL1 BS107ARL1G BS107G
Text: BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO-92 http://onsemi.com Features •ăAEC Qualified •ăPPAP Capable •ăPb-Free Package is Available* 250 mAMPS, 200 VOLTS RDS on = 14 W (BS107) RDS(on) = 6.4 W (BS107A)
|
Original
|
PDF
|
BS107,
BS107A
BS107)
BS107A)
BS107/D
BS107
PPAP MANUAL
BS107AG
BS107A
BS107ARL1
BS107ARL1G
BS107G
|
Untitled
Abstract: No abstract text available
Text: VN2010L/BS107 Vishay Siliconix N-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 VN2010L 200 BS107 D D D D D Low On-Resistance: 6 W
|
Original
|
PDF
|
VN2010L/BS107
VN2010L
BS107
O-226AA
08-Apr-05
|
BS107
Abstract: MBB692 transistor bs107
Text: DISCRETE SEMICONDUCTORS DATA SHEET BS107 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor
|
Original
|
PDF
|
BS107
SC13b
SCA54
137107/00/01/pp12
BS107
MBB692
transistor bs107
|
MAM146
Abstract: BP317 BS107 bs107 philips
Text: DISCRETE SEMICONDUCTORS DATA SHEET BS107 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor
|
Original
|
PDF
|
BS107
SC13b
SCA54
137107/00/01/pp12
MAM146
BP317
BS107
bs107 philips
|
BS107
Abstract: BS107 application BS107A BS107ARL1 BS107ARLRM BS107ARLRP BS107RL1 BS107RLRA
Text: BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N–Channel TO–92 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage – Continuous – Non–repetitive tp ≤ 50 µs Drain Current Continuous (Note 1.) Pulsed (Note 2.)
|
Original
|
PDF
|
BS107,
BS107A
BS107)
BS107A)
r14525
BS107/D
BS107
BS107 application
BS107A
BS107ARL1
BS107ARLRM
BS107ARLRP
BS107RL1
BS107RLRA
|
BS107A
Abstract: BS107 MOTOROLA
Text: MOTOROLA Order this document by BS107/D SEMICONDUCTOR TECHNICAL DATA TM OS Switching N-Channel — Enhancement BS107 BS107A 1 DRAIN 3 SOURCE MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage — Continuous — Non-repetitive tp < 50 us Symbol
|
OCR Scan
|
PDF
|
BS107/D
BS107
BS107A
BS107A
BS107 MOTOROLA
|
|
|
Untitled
Abstract: No abstract text available
Text: Temic siiiconix_VN2010L/BS107 N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS VN2010L Mín (V) r DS(on) 200 BS107 Max (Q) Id (A) (V) VGS(th) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12
|
OCR Scan
|
PDF
|
VN2010L/BS107
VN2010L
BS107
Su5/94)
O-226AA)
P-38283--
|
ha1100
Abstract: UG-94 bs107
Text: Temic VN2010L/BS107 S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max <Q) VGS(th)(V) Id (A) 10 @ V o s = 4.5 V 0.8 to 1.8 0.19 28 @ V o s = 2.8 V 0.8 to 3 0.12 V N2010L 200 BS107
|
OCR Scan
|
PDF
|
VN2010L/BS107
N2010L
BS107
O-226AA)
ug-94
ha1100
UG-94
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BS107 QUICK REFERENCE DATA FEATURES • Direct interface to C-MOS, TTL, etc • High-speed switching • No secondary breakdown. DESCRIPTION SYMBOL PARAMETER
|
OCR Scan
|
PDF
|
BS107
CB700
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors BS107 Data sheet status Prelim inary specification date of issue February 1991 N-channel enhancement mode vertical D-MOS transistor FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET PIN CONFIGURATION FEATURES
|
OCR Scan
|
PDF
|
BS107
-TO-92
MBB073
|
Philips DATA Handbook sc07
Abstract: No abstract text available
Text: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BS107 QUICK REFERENCE DATA FEATURES • Direct interface to C-MOS, TTL, etc • High-speed switching • No secondary breakdown. DESCRIPTION SYMBOL PARAMETER
|
OCR Scan
|
PDF
|
BS107
Philips DATA Handbook sc07
|
bs107 transistor
Abstract: cr 406 transistor BS107 UCB700 transistor 406 specification
Text: Philips Com ponents BS107 Data sheet status Preliminary specification date of issue February 1991 N-channel enhancement mode vertical D-MOS transistor PINNING - TO-92 variant PIN CONFIGURATION FEATU RES • Direct interface to C-M OS, T T L , etc. • High speed switching
|
OCR Scan
|
PDF
|
BS107
MBB073
UCB700
bs107 transistor
cr 406 transistor
BS107
UCB700
transistor 406 specification
|
motorola l6 lcd
Abstract: BS107 MOTOROLA AY0438 AY0438/P001
Text: MOTOROLA Order this document by BS107/D SEMICONDUCTOR TECHNICAL DATA TMOS Switching N-Channel — Enhancement 1 DRAIN 3 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage Vd S 200 Vdc vgs ±20 +30 Vdc Vpk Gate-Source Voltage — Continuous
|
OCR Scan
|
PDF
|
BS107/D
100jiA
DS700101-page
A0cn0NH03±
motorola l6 lcd
BS107 MOTOROLA
AY0438
AY0438/P001
|
TRANSISTOR D 471
Abstract: interruptor bs107 TO92
Text: Philips • Semiconductors bbS3^4 0070013 471 ■ S I C3 BS107 Data sheet status Preliminary specification date of Issue February 19^.1 N-channel enhancement mode vertical D-MOSthansistor FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET
|
OCR Scan
|
PDF
|
BS107
MBB073
TRANSISTOR D 471
interruptor
bs107
TO92
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BS107 FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET PINNING - TO -92 variant PIN CONFIGURATIO N FEATURES PIN • Direct interface to C-M O S, TTL,
|
OCR Scan
|
PDF
|
BS107
MBB073
|
s3331
Abstract: No abstract text available
Text: Philips Components BS107 Data sheet status Preliminary specification date of issue February 1991 N-channel enhancement mode vertical D-MOS transistor PINNING - TO-92 variant PIN CONFIGURATION FEATURES PIN • Direct interface to C-M O S, TTL, etc. • High speed switching
|
OCR Scan
|
PDF
|
BS107
yP1031
s3331
|
