12 v 100w power amp diagram
Abstract: voltage regulator IC 723 AN894 REGULATOR IC V17 MA376 AN8946SB amp ic 11 pin Gva tv 32" 12 v 100w amp pulse width modulation demodulation
Text: ICs for TV AN8946SB FM demodulation IC for BS/CS broadcasting • Overview 28 14 15 ■ Features 0.2 +0.1 –0.05 0.9±0.1 2.05±0.2 0.1±0.1 • 5 V single power source • Low power dissipation typ. 170 mW • S/N 65 dB or more • Inter-modulation interference ratio: 50 dB or more
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AN8946SB
AN8946SB
SSOP028-P-0375A
12 v 100w power amp diagram
voltage regulator IC 723
AN894
REGULATOR IC V17
MA376
amp ic 11 pin
Gva tv 32"
12 v 100w amp
pulse width modulation demodulation
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12 v 100w power amp diagram
Abstract: MA376 AN8946SB
Text: ICs for TV AN8946SB FM demodulation IC for BS/CS broadcasting • Overview 11.6±0.3 0.8 15 0.1±0.1 14 0.4 7.2±0.3 9.3±0.3 0.9±0.1 • 5 V single power source • Low power dissipation (typ. 170 mW) • S/N 65 dB or more • Inter-modulation interference ratio: 50 dB or more
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AN8946SB
12 v 100w power amp diagram
MA376
AN8946SB
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Untitled
Abstract: No abstract text available
Text: Types TAT and TAX Wet Tantalum Capacitor – CLR 79 MIL-C-39006/22 CLR 81 (MIL-C-39006/25) Commercial Types TAT for CLR79 and TAX for CLR81 Military Types CLR79 and CLR81 and CDE’s commercial equivalent TAT and TAX, all with Teflon inner-seal, glass-tometal hermetic outer-seal, tantalum case construction, have
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MIL-C-39006/22)
MIL-C-39006/25)
CLR79
CLR81
CLR81
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Untitled
Abstract: No abstract text available
Text: Pre-Insulated Sealed Terminals and Splices Catalog 82602 Revised 12-02 Product Facts • Moisture-proof seal prevents corrosion ■ Insulation allows visual examination ■ Seals out moisture and provides exceptional wire insulation support ■ One piece assembly allows
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AD941
Abstract: P2826
Text: 10-Bit, 170/200 MSPS 3.3 V A/D Converter AD9411 Data Sheet FEATURES SCALABLE REFERENCE TRACK AND HOLD ADC 10 10-BIT PIPELINE / CORE TE VIN+ AD9411 VIN– CLK+ CLK– CLOCK MANAGEMENT LVDS OUTPUTS LVDS TIMING DATA, OVERRANGE IN LVDS DCO+ DCO– S1 S5 Figure 1.
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AD9430
10-Bit,
AD9411
MS-026-AED-HD
100-Lead
SV-100)
AD9411BSVZ-170
AD9411BSVZ-200
AD941
P2826
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55824-1
Abstract: 55848 diode 8-55851-2 RING LUG M6
Text: Pre-Insulated Sealed Terminals and Splices Catalog 82602 Revised 12-02 Product Facts • Moisture-proof seal prevents corrosion ■ Insulation allows visual examination ■ Seals out moisture and provides exceptional wire insulation support ■ One piece assembly allows
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VNW100N04
Abstract: No abstract text available
Text: VNW100N04 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET Table 1. General Features Figure 1. Package Type Vclamp RDS on Ilim VNW100N04 42 V 0.012 Ω 100 A • LINEAR CURRENT LIMITATION ■ THERMAL SHUT DOWN ■ SHORT CIRCUIT PROTECTION ■ INTEGRATED CLAMP
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VNW100N04
O-247
O-247
VNW100N04,
VNW100N04
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SY101422
Abstract: No abstract text available
Text: SY10422-3/4/5/7 SY100422-3/4/5/7 SY10422-3/4/5/7 SY101422-3/4/5/7 SY100422-3/4/5/7 SY101422-3/4/5/7 256 x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 3/4/5/7ns max.
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SY10422-3/4/5/7
SY100422-3/4/5/7
SY101422-3/4/5/7
500ps
250mA,
200mA
10K/100K
SY101422
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SY101422
Abstract: No abstract text available
Text: SY10422-3/4/5/7 SY100422-3/4/5/7 SY10422-3/4/5/7 SY101422-3/4/5/7 SY100422-3/4/5/7 SY101422-3/4/5/7 256 x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 3/4/5/7ns max.
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SY10422-3/4/5/7
SY100422-3/4/5/7
SY101422-3/4/5/7
500ps
250mA,
200mA
10K/100K
SY101422
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Untitled
Abstract: No abstract text available
Text: STG4159 Low voltage 0.3 Ω max single SPDT switch with break-before-make feature and 10 kV contact ESD protection Features • Wide operating voltage range: VCC opr = 1.65 V to 4.8 V ■ Low power dissipation: ICC = 0.2 µA (max.) at TA = 85 °C ■ Low “ON” resistance VIN = 0 V:
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STG4159
IEC-61000-4-2
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SAFCH
Abstract: SFE10 TA31273FN K3900
Text: TA31273FN TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA31273FN AM RF/IF Detector IC The TA31273FN is an RF/IF detector IC for AM radio. The IC incorporates an RF amp, 2-level comparator, and local x8 circuit. Features • RF frequency: 240 to 450 MHz
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TA31273FN
TA31273FN
20-pin
65-mm
SAFCH
SFE10
K3900
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SM 3119 N
Abstract: SM 3119
Text: AMP Catalog 82602 P re-lnsulate d Sealed T erm in als and S p lic e s R e vise d 12-02 Spade Term inals, Butt Splices and 250 Series FA ST O N Term inals Spade Term inals Wire Size Range: AWG 22 to 10 [0.26 to 6.64 mm2] CMA 509 to 13,100 Material L AWG im m']
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Untitled
Abstract: No abstract text available
Text: * SY10L422-4/5/7 SY100L422-4/5/7 SY101L422-4/5/7 LOW POWER 256 x 4 ECL RAM SYNERGY SEMICONDUCTOR DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ The Synergy SY10L/100L/101L422 are low-power versions of Synergy's ultra-high-speed 1,024-bit Random Access Memories RAMs , designed with advanced Emitter
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SY10L422-4/5/7
SY100L422-4/5/7
SY101L422-4/5/7
SY10L/100L/101L422
024-bit
SY10L/100L7101L422
256-words-by-4-bits,
10/100/101K
SY10L/100L/101L422-4DCS
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BFY52 equivalent
Abstract: ic marking z7 marking C1s 2N2222 2N2475 2N2938 f025 2N929 2N2369 equivalent BAW63
Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B.S. num ber* Page Type Device
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BFS36
2N930
BS9365
BAW63
BS9302
BFS36A
2N929
BAW63A
BFY52 equivalent
ic marking z7
marking C1s
2N2222
2N2475
2N2938
f025
2N2369 equivalent
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Untitled
Abstract: No abstract text available
Text: SYNERGY * SEMI CONDUCTOR SYNERGY SEMICONDUCTOR S7E D • «ìGOiafil b3T ■ SY10L494-7/8/10 SY100L494-7/8/10 SY 101L494-7/8/10 LOW POWER 16K x 4 ECL RAM FEATURES OGQOOaa DESCRIPTION ■ Address access time, tAA: 7/8/1 Ons max. ■ Chip select access time, tAc: 3/4/5ns max.
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SY10L494-7/8/10
SY100L494-7/8/10
101L494-7/8/10
-180m
10K/100K/
SY10L/100L/101L494-7PCS
P28-1
F28-1
SY10L/10017101L494-7YCS
SY10L/100L/101L494-7FCS
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MOTOROLA ELECTROLYTIC CAPACITOR
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear am plifier applications in industrial and com m ercial FM/AM
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MRF15090/D
MOTOROLA ELECTROLYTIC CAPACITOR
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co., LTD. Description Features The GMM7324000BS/SG is a 4M x 32 bits Dynamic RAM MODULE which is assembled 32 pieces of 4M x lbits DRAMs in 20/26 pin SOJ package on the printed circuit board. This module can be as well used as 8M x 16 bits Dynamic RAM
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GMM7324000BS/SG
GMM7324000BS
GMM7324000BSG
1111111111M
00Db5fl2
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SY101L484
Abstract: No abstract text available
Text: TD013Ö1 QDDD07C1 b27 S7E D SYNERGY SEMICONDUCTOR Address access time, tAA: 7/8/1 Ons max. Chip select access time, tAc: 3/4/5ns max. Eliminates write recovery glitch found on competitors’ ECL RAMs Low power supply current, I e e : -180m A min. Designed for alpha particle immunity
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TD013
QDDD07C
-180m
10K/100K/
101KECL
384-bit
SY10L/10017101L484-7PCS
SY10L/100L/101L484-7FCS
SY10L/100L/101L484-7YCS
SY10L/100L/101L484-8PCS
SY101L484
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Untitled
Abstract: No abstract text available
Text: =>Y104?2-3M/5/7 *0 * v 1 lhj.4:- 2 'A: h j < 7 SYNERGY R ii/, j e c l -.v w .u ^ -a , S E M IC O N D U C T O R 3 Y 1 O I W U 22-5/7 DES C RIPTIO N FEA T U R E S • Address access time, tAA: 3/4/5/7ns max. The Synergy SY10/100/101422 are 1024-bit Random
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500ps
-250m
-200mA
10K/100K
SY10/100/101422-3FCF
SY10/100/101422-3MCF
F24-1
M28-1
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tws bs3 433
Abstract: MBM100422 hm100422 TWS 434 dm10422 DM100422 DM100422A
Text: DM 100422/DM 100422A National Semiconductor Corporation March 1987 DM 100422/DM 100422A 1024-Bit 256 x 4 ECL RAM General Description Features The DM100422/DM100422A is a 1024-bit ECL random ac cess memory organized as 4 blocks of 256 bits. Since each block has its own Select input, the memory can be config
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100422/DM100422A
1024-Bit
DM100422/DM100422A
1024-bit
TL/L/6749-7
DM100422J
DM100422AJ
TL/L/6749-8
DM10422W,
10422AW
tws bs3 433
MBM100422
hm100422
TWS 434
dm10422
DM100422
DM100422A
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Untitled
Abstract: No abstract text available
Text: « S Y 1 0422-3/4/5/7 SY1 00422-3/4/5/7 S Y 101422-3/4/5/7 S Y101 M 422-5/7 256 x 4 ECL RAM SYNERGY S E M IC O N D U C T O R F E A TU R E S D E S C R IP TIO N Address access time, 3/4/5/7ns max. tAA: Block select access time, tAB: 2ns max. Write pulse width, tww: 3ns min.
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500ps
-200mA
10K/100K
Sel100/101422-5DCS
SY10/100/101422-5FCS
SY10/100/101422-5JCS
SY10/100/101422-5JCSTR
SY10/100/101422-5PCS
101M422-5DCS
SY101M422-5PCS
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Untitled
Abstract: No abstract text available
Text: 5 7E » SYNERGY SEMIC ON DUC TOR IQOlBfll OOOOOE1 flOO SY10480-6 * 16K x 1 ECL RAM SYNERGY SEMICONDUCTOR SY100480-6 SY101480-6 - ^ - 2 3 - 0 ys DESCRIPTION FEATURES The Synergy SY10/100/101480 are 16384-bit Random Access Memories RAMs , designed with advanced Emitter
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SY10480-6
SY100480-6
SY101480-6
500ps
-220mA
10K/100K/
SY10/100/101480
16384-bit
SY10480-8
SY100480-0
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BC107 equivalent transistors
Abstract: BC140 equivalent BCY71 BS 2N3053 equivalent marking 1801 2N929 2N930 BAW63 BAW63A BFS36
Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B.S. number* Page Type Device
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OCR Scan
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BFS36
2N930
BS9365
BAW63
BS9302
BFS36A
2N929
BAW63A
BC107 equivalent transistors
BC140 equivalent
BCY71 BS
2N3053 equivalent
marking 1801
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10L42
Abstract: 1605 B iw16
Text: * SY10L422-5/7 SY100L422-5/7 SY101 L422-5/7 LOW-POWER 256 x 4 EC L RAM SYNERGY SEMICONDUCTOR FEA TU RES D ESC RIPT IO N The Synergy SY10LV100L/101L422 are 1024-bit Random Access Memories RAMs , designed with advanced Emitter Coupled Logic (ECL) circuitry. The devices are organized
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SY10L422-5/7
SY100L422-5/7
SY101
L422-5/7
SY10LV100L/101L422
1024-bit
256-words-by-4-bits
10K/100K
SY100L422
SY101L422
10L42
1605 B
iw16
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