BR2864A Search Results

BR2864A Datasheets (10)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
BR2864A-250		ROHM	8K x 8 nMOS EEPROM Memory		Scan	PDF
BR2864A-250		ROHM	8K x 8 Bit Electrically Erasable PROM		Scan	PDF
BR2864A-300		ROHM	8K x 8 nMOS EEPROM Memory		Scan	PDF
BR2864A-300		ROHM	8K x 8 Bit Electrically Erasable PROM		Scan	PDF
BR2864A-350		ROHM	8K x 8 Bit Electrically Erasable PROM		Scan	PDF
BR2864A-450		ROHM	8K x 8 Bit Electrically Erasable PROM		Scan	PDF
BR2864AF-250		ROHM	8K x 8 Bit Electrically Erasable PROM		Scan	PDF
BR2864AF-300		ROHM	8K x 8 Bit Electrically Erasable PROM		Scan	PDF
BR2864AF-350		ROHM	8K x 8 Bit Electrically Erasable PROM		Scan	PDF
BR2864AF-450		ROHM	8K x 8 Bit Electrically Erasable PROM		Scan	PDF

BR2864A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
220V DC output Abstract: BR2864A-250 BR2864A-300 BR2864A-350 BR2864A-450 BR2864AF-250 DIP28 Text: BR2864A 8K x 8 Bit Electrically Erasable PROM FEATURES • Fast Read Access Time: 250ns ■ 5 Volt-Only Operation Including Write ■ Fast Nonvolatile Write Cycle: 10ms Max. - Automatic Write Timeout - Internally Latched Data - Internally Latched Address - Automatic Erase Before	OCR Scan	BR2864A 250ns BR2864A BR2864AF DIP28pin 220V DC output BR2864A-250 BR2864A-300 BR2864A-350 BR2864A-450 BR2864AF-250 DIP28	PDF
Untitled Abstract: No abstract text available Text: ROHM CO LT D 4oe d m T a e a 'm ooom a? I C / M e m o r y ICs s b irh h BR2865A 'T-4L-/3-2~ 7 8K X 8 fcf-y K 5V EEPROM 8K X 8 Bit 5V EEPROM •W fi^ ife E l/D im e n s io n s U n it: mm BR2865A ( i, 8192 X 8 M "j (EEPROM) T 'f « U, Betti y ? RAM tmmzti k?	OCR Scan	BR2865A DIP28pin BR2865A) BR2864A 250ns	PDF
toshiba 32k*8 sram Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464 Text: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258	OCR Scan	KM4164 KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 toshiba 32k*8 sram M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 TC51464	PDF
br6116-100 Abstract: BR2864A-350 BR93C56B BR9021A BR6264P-100 BR6116 BR2804A-250 BR2804A-450 EEPROM Capacity br6216 ic Text: mna M o n o lith ic ICs EEPROM * Capacity bits Type Configuration (words X bits) BR93C46 BR93C46A 1K BR93CS46 BR93LC46 BR93CS6A BR93C56B BR9021A ☆BR9021B CD (/) 2K 128 X 16 BR93C66B 4K 256 X 4K 16K _ 03 64 K Supply voltage (V) 512x8 8K X X 8 8 Standby	OCR Scan	BR93C46 BR93C46A BR93CS46 BR93LC46 BR93CS6A BR93C56B BR9021A BR9021B BR93C66B 512x8 br6116-100 BR2864A-350 BR6264P-100 BR6116 BR2804A-250 BR2804A-450 EEPROM Capacity br6216 ic	PDF
41C1000 Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258	OCR Scan	41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A	PDF
br6116-100 Abstract: BR6264-12 br6264 BR6264-10 BR2804 BR6116 Text: lUMm BR6264 8K x 8 CMOS SRAM Features High-speed 100/120 ns Max. TTL compatible-all inputs and outputs Low power dissipation Common I/O using three-state outputs Standard version: Operating 90mA Max. Standby 2mA Max. Output enable and two chip enable inputs	OCR Scan	100pA BR6264 BR6264-10L/12L) 28-pin 536-bit BPD1000J-P9 BPD1000J-P8 BPD0256J-P9 BPD0256J-P8 br6116-100 BR6264-12 BR6264-10 BR2804 BR6116	PDF
EEPROM 2864 INTEL Abstract: EEPROM 2864 2864 eeprom 2864 eeprom intel intel 2864 2864 rom CI EEPROM 2864 hn58064p-25 HN58064P-30 SEEQ 52B33 Text: - 76 - 2 3 6 4 m & tt £ iá g íc S l °C X4 '/ % > TAAC max (ns) TCAC max (ns) TOH ta x (ns) TO E max (ns) TO D max (ns) VDD (V) -h A SSL I DD/STAÍDBY (nA) V IL Biax (V) V IH min (V) ai C i max (pF) -h/m%n, m V O L / I VOL max (V/mA) V O H / IV O H min	OCR Scan	52B33-200 52B33-300 52B33-350 52B33/H-250 KM2864A-30 KM2864AH-20 192x8) 28PIN EEPROM 2864 INTEL EEPROM 2864 2864 eeprom 2864 eeprom intel intel 2864 2864 rom CI EEPROM 2864 hn58064p-25 HN58064P-30 SEEQ 52B33	PDF
RCM2008R Abstract: 1SS299 bu24204 RCM2027 BA3422S BA843 BA6490FS da119 k2 BA6404 BA857 Text: 87 87 87 87 87 88 88 88 88 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 90 90 90 87 87 87 87 87 87 86 86 86 86 88 88 88 88 88 88 88 88 88 88 88 88 88 88 88 88 86 86 86 86 86 87 86 86 86 86 86 86 86 86 86 86 86 86 86 86 86 86 86 87 86 86 86 88 88	OCR Scan	2N3906 2N3946 2N3947 2N4059 N4060 2N4061 2N4062 2N4123 2N4124 2N4125 RCM2008R 1SS299 bu24204 RCM2027 BA3422S BA843 BA6490FS da119 k2 BA6404 BA857	PDF
BR93LC46A Abstract: BR9021B Text: 7 f l 2 í m tí 0 0 0 7 3 0 0 M□ Lf WDHffl RHri EEPROM •Serial 3-wire Operating voltage Capacity Bit Power Organization (Word X Bit) Part No. supply (V) Read(V) Write(V) Curent consunption(Max) Write cycle Active Stand-by time(Max) <mA) Operating temp Rewritability	OCR Scan	64x16 128X16 256X16 BR93LL46/F BR93LC46/F BR93LC46A/AF BR93LC56/F BR93LC56A/AF BR93LC66/RF BR93LC66A/ARF BR93LC46A BR9021B	PDF
SLO 365 R Abstract: BR6116-100 BR6264P-100 BR62256-70 BR28C16-150 XLS78C800P-25 BR2804A-250 BR9021A 5 m0 365 R XLS78C800P-45 Text: ROHM CO L T D 40E C ? ñ 2 ñ cm D 00Q3537 IRHM 1 B Memory ICs • EEPROM * Under Development Capacity bits Type BR93C46 BR93C46A BR93CS46 1K « ☆BR93C56A ☆ BR93C56B 2K BR9021A tf) Configuration Max. access Min. cycle Supplyvoilage Max currentconsumption(mA) Re.vritecycles Data life	OCR Scan	00Q3537 BR93C46 64x16 BR93C46A BR93CS46 BR93C56A BR93C56B BR9021A BR9021B BR93C66A SLO 365 R BR6116-100 BR6264P-100 BR62256-70 BR28C16-150 XLS78C800P-25 BR2804A-250 BR9021A 5 m0 365 R XLS78C800P-45	PDF