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    Amphenol Corporation MRDBM02CAPA00

    Specialized Cables RUGGED MRD-B CABLE ASSBLY PLUG
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MRDBM02CAPA00 25
    • 1 $27.16
    • 10 $20.95
    • 100 $15.75
    • 1000 $13.76
    • 10000 $13.76
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    Amphenol Corporation MRDBM02CAPC00

    Specialized Cables RUGGED MRD-B CABLE ASSBLY PLUG
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MRDBM02CAPC00 20
    • 1 $24.25
    • 10 $21.08
    • 100 $19.37
    • 1000 $18.84
    • 10000 $18.84
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    Movella Technologies BV CA-USB-MTi

    Sensor Hardware & Accessories USB cable for MTi-10 Interface w/USB port
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CA-USB-MTi 16
    • 1 $69
    • 10 $69
    • 100 $69
    • 1000 $69
    • 10000 $69
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    Banner Engineering Corp BWA-M12CAB-MAG

    Mounting Hardware Cable Management Magnetic Bracket for M12 Cables
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BWA-M12CAB-MAG
    • 1 $100
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    • 1000 $100
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    Seiko Epson Corporation SG-8002CA(B)-MPT BLANK

    Programmable Oscillators SMD XT OSC (710 TYPE) B VER. MP MACH 60PCS/TUBE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SG-8002CA(B)-MPT BLANK
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    BM 2CA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FLU17ZM

    Abstract: ED-4701 SM 1628
    Text: FLU17ZM L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=32.5dBm typ. ・High Gain: G1dB=12.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU17ZM is a GaAs FET designed for base station and CPE


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    PDF FLU17ZM FLU17ZM ED-4701 SM 1628

    805-200-4

    Abstract: hirschmann automotive turbocharger measurement b 647 44
    Text: 647 SERIES Smart Rotary Actuators TYPICAL APPLICATIONS: Exhaust Valves Turbocharger Features/Benefits: • Brushless DC Reliability • Fast response, high torque output • On-board power switching • Auto calibration, soft stops • Diagnostic capability


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    PDF 02/OCT/2007 14/OCT/2009 805-200-4 hirschmann automotive turbocharger measurement b 647 44

    Untitled

    Abstract: No abstract text available
    Text: FLU35ZME1 L-Band Medium & High Power GaAs FET FEATURES High Output Power: P1dB=35.5dBm typ. High Gain: G1dB=11.5dB(typ.) Low Cost Plastic(SMT) Package Tape and Reel Available DESCRIPTION The FLU35ZME1 is a GaAs FET designed for base station and CPE application up to a 4.0GHz frequency range. This is a new product


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    PDF FLU35ZME1 FLU35ZME1 25deg

    Untitled

    Abstract: No abstract text available
    Text: FLU17ZME1 L-Band Medium & High Power GaAs FET FEATURES High Output Power: P1dB=32.5dBm typ. High Gain: G1dB=12.5dB(typ.) Low Cost Plastic(SMT) Package Tape and Reel Available DESCRIPTION The FLU17ZME1 is a GaAs FET designed for base station and CPE application up to a 4.0GHz frequency range. This is a new product


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    PDF FLU17ZME1 FLU17ZME1

    101S12

    Abstract: FLU35ZME1
    Text: FLU35ZME1 L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=35.5dBm typ. ・High Gain: G1dB=11.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU35ZME1 is a GaAs FET designed for base station and CPE


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    PDF FLU35ZME1 FLU35ZME1 25deg 101S12

    IM320

    Abstract: fujitsu flu fujitsu gaas fet L-band
    Text: FLU17ZM L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=32.5dBm typ. ・High Gain: G1dB=12.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU17ZM is a GaAs FET designed for base station and CPE


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    PDF FLU17ZM FLU17ZM FCSI0202M200 IM320 fujitsu flu fujitsu gaas fet L-band

    32c13

    Abstract: No abstract text available
    Text: I0 <2CAB@G0 B/<2/@20CL0F0CL00=B>@7<B I08E+0=@0C8+0 <>CB I0(7F0(72320(673:2 I0447173<1G0C>0B=02 I07F320AE7B167<504@3?C3<1G #30-'#/0#% #*/.020A,(&!/&+*. )3:31=;A/B/1=; &@=13AA0=<B@=: ,7@3:3AA0$3BE=@9


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    PDF 20CL0F0CL00 30E7B60DL0F0CL0> 13AA0 347BA 32C1320 /27/B320< B/530 28CAB 32c13

    high power FET transistor s-parameters

    Abstract: ED-4701 FLU35ZM High Power GaAs FET
    Text: FLU35ZM L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=35.5dBm typ. ・High Gain: G1dB=11.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU35ZM is a GaAs FET designed for base station and CPE


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    PDF FLU35ZM FLU35ZM high power FET transistor s-parameters ED-4701 High Power GaAs FET

    4BE67

    Abstract: C356D E5 0D E7834
    Text: 123456789 ABC9ADEDF9B9CED9 D9DF9B9AD FD9 1 A 23435671839A5BCDBE41 36D5391 "04A!1 %2AD4D92A4346A,84D84A5673DF4.A 2A75A904A.D482A567E4.D84A5746A646D64FA97A DC54C489A 2A E7C52E9A 42.7A 97A .4A 0D40A 62D97A 64346A .79D78A 29A 28A 4+964C47A


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    PDF 23435671839A5BCDBE41 D4D92 84D84A5673DF4 A75A904A A567E4. D84A57 46A646 D64FA97A 4C489A E7C52E9 4BE67 C356D E5 0D E7834

    fujitsu flu

    Abstract: fujitsu gaas fet L-band
    Text: FLU35ZM L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=35.5dBm typ. ・High Gain: G1dB=11.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU35ZM is a GaAs FET designed for base station and CPE


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    PDF FLU35ZM FLU35ZM FCSI0202M200 fujitsu flu fujitsu gaas fet L-band

    61a3 mosfet

    Abstract: m21 sot23 transistor fairchild aa11 L0DA A10 sot23-5 transistor m21 sot23 h1 sot23-5 honda 20 pin connector pinout ADSP-TS101S f21 diode sot23
    Text: ADSP-TS101S EZ-KIT Lite Evaluation System Manual Revision 1.1, March 2004 Part Number 82-000635-01 Analog Devices, Inc. One Technology Way Norwood, Mass. 02062-9106 a Copyright Information 2004 Analog Devices, Inc., ALL RIGHTS RESERVED. This document may not be reproduced in any form without prior, express written


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    PDF ADSP-TS101S 61a3 mosfet m21 sot23 transistor fairchild aa11 L0DA A10 sot23-5 transistor m21 sot23 h1 sot23-5 honda 20 pin connector pinout f21 diode sot23

    P4N20

    Abstract: ADT8A
    Text: P r BM NARY INFORMATION PM09610S1 Æ lY I^ - PMC-Sierra, inc. BSUE2 PM3350 ELAN 8x10 BPOffflOIMmSEIHBW ETSW rrCH PM3350 ELAN 8x10 8 PORT ETHERNET SWITCH Preliminary Information Issue 2: July 1997 PMC-Sierra, Inc. 105 - 8555 B axter Place Burnaby, BC Canada V 5 A 4 V 7 6 0 4 .415.6000


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    PDF PM09610S1 PM3350 8POKT10HBTTj P4N20 ADT8A

    Untitled

    Abstract: No abstract text available
    Text: MB86831 SPARCIite SERIES 32-BIT RISC EMBEDDED PROCESSOR DATASHEET FUJITSU MARCH 1998 Single vector trapping FEATURES 0.35 micron gate, 2-level metal CMOS technology, 3.3V internal with 3.3 or 5V I/O 66, 80, or 100 MHz CPU with on-chip clock multiplier GENERAL DISCUSSION


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    PDF MB86831 32-BIT FP176-P-2424-1 FPT-176P-M01) MB86831 176-LEAD FF176001S-3C-3

    Untitled

    Abstract: No abstract text available
    Text: MB86832 SPARCIite SERIES 32-BIT RISC EMBEDDED PROCESSOR DATA SHEET FUJITSU MAY 1997 • • • • FEATURES • 66MHz, 80MHz and 100 MHz versions each with clock doubling capability • SPARC high performance RISC architecture • 8 window, 136 word register file


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    PDF MB86832 32-BIT 66MHz, 80MHz 256Mbyte QFP176-P-2424-1 MB86832-66/80/100 FPT-176P-M01)

    Untitled

    Abstract: No abstract text available
    Text: MB86832 SPARCIite SERIES 32-BIT RISC EMBEDDED PROCESSOR DATASHEET FUJITSU MARCH 1998 Single vector trapping FEATURES Debug Support Unit 0.35 micron gate, 2-level metal CMOS technology, 3.3V internal with 3.3 or 5V I/O 66, 80, or 100 MHz CPU with on-chip clock multiplier


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    PDF MB86832 32-BIT B86832 MB8683X FP176-P-2424-1 FPT-176P-M01) MB86832-66/80/100 176-LEAD

    SMAJ130A-TR

    Abstract: DBT 134 SMAJ15A-TR SMAJ33A-TR
    Text: SGS-THOMSON » glMlLiCTIHMDOS SMAJ5.0A-TR,CA-TR SMAJ188A-TR,CA-TR TRANSIL PRELIMINARY DATASHEET FEATURES • PEAK PULSE POWER: 400 W (10/1 OOO^s ■ STAND OFF VOLTAGERANGE : From 5V to 188V. ■ UNI AND BIDIRECTIONAL TYPES . LOW CLAMPING FACTOR ■ FAST RESPONSETIME


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    PDF J188A SMAJ130A-TR DBT 134 SMAJ15A-TR SMAJ33A-TR

    HY512260TC50

    Abstract: HY512260JC50 hy512260 HY512260SLRC HY512260JC Y9543 HY512260JC-50
    Text: «HYUNDAI H Y 5 1 2 2 6 0 S e r ie s 128KX 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY512260 is the new generation and fast dynamic RAM organized 131,072 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access


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    PDF 128KX 16-bit HY512260 400mil 40pin 40/44pin 11-00-MA HY512260TC50 HY512260JC50 HY512260SLRC HY512260JC Y9543 HY512260JC-50

    part MARKING k48

    Abstract: marking bc p28 CMSD4448 W4W MARKING CM0Z15L CMZ5936B CM0Z11V CMZ5945B marking 6ca marking code ca2
    Text: Marking Codes Continued Marking Code Part Number Marking Code 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1F)C 2AC 2B 2C 2CA 2F 2FC 2G 2PC 2QC 2P 3A 3B 3E 3F 3G 3J 3K 3L 3P 4A 4B 4C 4E


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    PDF CMOD2004 CMLD2004 CMLD2004A CMLD2004C CMLD2004S CMLD2004DO BC846A CMSZ5250B CMST3904 BC846B part MARKING k48 marking bc p28 CMSD4448 W4W MARKING CM0Z15L CMZ5936B CM0Z11V CMZ5945B marking 6ca marking code ca2

    2SK786

    Abstract: fsjc EER 35 kd
    Text: E m C ELECTRONICS T| b42752S INC ÜDiflT34 98D 18934 D T - 3 9 -1 3 =J . P R E LIM IN A R Y S P E C IF IC A T IO N F A S T S W IT C H IN G N -Ç H A N N EL S IL IC O N PO W ER Absolute Maximum Rat¡ngs Ta=25*C 800V VOSS Drain to Source Voltage ± 2j V vcss


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    PDF T-39-13 GoiflT34 2SK786 -55to 51DTH fsjc EER 35 kd

    pj 0189 diode

    Abstract: STMicroelectronics DIODE marking code AE pj-25 diode smaj1 cg 88a SMA marking PJ pj 88 diode diodes STmicroelectronics marking DBK pj 936 SMAJ15A-TR
    Text: SMAJ5.0A-TR,CArTR SMAJ188ArTR,CA-TR TRANS IL FEATURES • PEAK PULSE POWER : 400 W 10/1 OOO^s ■ STAND OFF VOLTAGE RANGE : From 5V to 188V. ■ UNI AND BIDIRECTIONAL TYPES ■ LOW CLAMPING FACTOR ■ FAST RESPONSE TIME ■ JEDEC REGISTERED PACKAGE OUTLINE


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    PDF SMAJ188ArTR pj 0189 diode STMicroelectronics DIODE marking code AE pj-25 diode smaj1 cg 88a SMA marking PJ pj 88 diode diodes STmicroelectronics marking DBK pj 936 SMAJ15A-TR

    diode s 30ca

    Abstract: BM 2ca SMAJ15A-TR
    Text: SGS-THOMSON » glMlLiCTIHMDOS SMAJ5.0A-TR,CA-TR SMAJ188A-TR,CA-TR TRANS IL FEATURES • PEAK PULSE PO W ER : 400 W (10/1 OOO^s ■ STAND OFF VOLTAG ERANG E : From 5V to 188V. ■ . ■ ■ UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSETIM E


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    PDF J188A diode s 30ca BM 2ca SMAJ15A-TR

    ELECTRONIC circuit diagram of digital hearing aid

    Abstract: MDI81 sub-picture dct HM5216165 low cost hearing aid circuit diagram iso 13818-2 scr T103 CC1R601 t308 uPD4516161
    Text: O V E R V IE W CHAPTER 1 1.1 1.2 FEATURES ♦ Supports system-I eve I navigation processing ♦ Supports D V D 1 .OVideo O b je c t VOB b it streams ♦ Decodes MPEG-2 and MPEG-1 video in real tim e ♦ Display: NTSC (720x480 @ 60 fps) and PAL (720x576 @ 50 fps)


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    PDF 720x480 720x576 b72m05 0DD13 ELECTRONIC circuit diagram of digital hearing aid MDI81 sub-picture dct HM5216165 low cost hearing aid circuit diagram iso 13818-2 scr T103 CC1R601 t308 uPD4516161

    Untitled

    Abstract: No abstract text available
    Text: MB86831 FUJITSU S P A R C Iite S E R IE S 3 2 -B IT R IS C E M B E D D E D P R O C E S S O DATA S H E E T FE B R U A R Y 199 Built-in Internal Clock frequency multiplier circuit FEATURES Single vector trapping 66MH/., 80MHz and 100 MHz. versions each with


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    PDF MB86831 66MH/. 80MHz 256Mbyte MB8683. MB8683X B86831-66/80/100 176-LEAD FF176001S-3C-3

    1AD1S

    Abstract: No abstract text available
    Text: "HYUNDAI H Y 5 1 1 8 2 6 0 J ïe r ie s 1 M x 1 6 - b it C M O S D R A M w it h 2 C A S &W PB DESCRIPTION The HY5118260 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118260 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


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    PDF HY5118260 16-bit. 800JBSC 1AD16-10-MAV94 HY5118260JC HY5118260SLJC HY5118260TC HY5118260SLTC 1AD1S