BLF6G22-180PN |
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NXP Semiconductors
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Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27.5 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 50 W; Package material: SOT539A ; Power gain: 17.5 dB |
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Original |
PDF
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BLF6G22-180PN,112 |
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Ampleon USA
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 17DB SOT539A |
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Original |
PDF
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BLF6G22-180PN,112 |
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NXP Semiconductors
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Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27.5 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 50 W; Package material: SOT539A ; Power gain: 17.5 dB; Package: SOT539A (LDMOST); Container: Blister pack |
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Original |
PDF
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BLF6G22-180PN,112 |
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NXP Semiconductors
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RF FETs, Discrete Semiconductor Products, TRANS BASESTATION SOT539A |
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Original |
PDF
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BLF6G22-180PN,135 |
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NXP Semiconductors
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BLF6G22-180PN - Power LDMOS transistor, SOT539A Package, Standard Marking, Reel Pack, SMD, Large |
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Original |
PDF
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