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    BLF4G10LS-160 Search Results

    BLF4G10LS-160 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BLF4G10LS-160 NXP Semiconductors UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 800 - 1000 GHz; Mode: CW / EDGE ; Output power: 25 W; Package material: SOT502B ; Power gain: 18 dB Original PDF
    BLF4G10LS-160,112 NXP Semiconductors RF FETs, Discrete Semiconductor Products, BASESTATION FINAL 1GHZ SOT502B Original PDF