1N4150UR-1
Abstract: No abstract text available
Text: MINI-MELF-SMD Silicon Diode 1N4150UR-1 Applications Switching Used in general purpose applications, where a low current controlled forward characteristic and fast switching speed are important. BKC can produce generic equivalents to JAN/ TX/ TXV and S level per
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1N4150UR-1
MIL-S-19500/
LL-34/35
DO-35
Mil-S-19500/231
031-A
MSC0960
1N4150UR-1
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DO-213AA
Abstract: LL4150 LL4150-1
Text: MINI-MELF-SMD Applications LL4150 or LL4150-1 Silicon Diode Switching Used in general purpose applications, where a low current controlled forward characteristic and fast switching speed are important. BKC can produce generic equivalents to JAN/ TX/ TXV and S level per
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LL4150
LL4150-1
MIL-S-19500/
LL-34/35
DO-213AA
DO-35
031-A
DO-213AA
LL4150
LL4150-1
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LL4150 SMD
Abstract: DO-213AA LL4150 LL4150-1
Text: MINI-MELF-SMD Applications LL4150 or LL4150-1 Silicon Diode Switching Used in general purpose applications, where a low current controlled forward characteristic and fast switching speed are important. BKC can produce generic equivalents to JAN/ TX/ TXV and S level per
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LL4150
LL4150-1
MIL-S-19500/
LL-34/35
DO-213AA
DO-35
031-A
LL4150 SMD
DO-213AA
LL4150
LL4150-1
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1N4607
Abstract: TL50 1N4150 1N4608 DO-213AA LL4607 LL4608 diode with PIV 200
Text: Silicon Switching Diode DO-35 Glass Package 1N4607 1N4150 Applications Used in general purpose applications,where a controlled forward characteristic and fast switching speed are important. DO-35 Glass Package Features L ea dDi a. 0 .0 18-0 .0 22" 0 .458-0 .558m m
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DO-35
1N4607
1N4150
-55oC
031-A
1N4607
TL50
1N4150
1N4608
DO-213AA
LL4607
LL4608
diode with PIV 200
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Untitled
Abstract: No abstract text available
Text: BKC I NTERNATI ONAL 117^03 30E D DDÜ0BS5 S • ' T ' 0 3 - O cî 1 _v M BKC International Electronics Inc. 6 Lake Street Lawrence, MA USA 01841 - SPEC. NO: I1N4608 REVISION: A Paw: 1/ 1 MATERIAL 00-35, SILICON DIODE, TYPE 4607, PC 20f ttlTH SOLDER PLATEO LEAOS.
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I1N4608
1N4608
DO-35
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9368
Abstract: 175C
Text: B K C INTERNATIONAL 3ÜE D • 1 1 7 ^ 0 3 000035=1 Û ■ '“T-Q'3>-<0°1 BKC INTERNATIONAL ELECTRONICS, INC. 6 Lake street Lawrence, MA 0 1 8 4 1 Te SOS 681 - 0 3 9 2 BKC 900 HIGH SPEED SW I T C H I N G DIODE M A X IMUM RATING. PEAK INVERSE VOLTAGE: WOR KING INVERSE VOLTAGE:
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500mW
200mA
500mA
100mA
500nA
DO-35
9368
175C
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SMD 437 diode
Abstract: BKC Semiconductors DSAIH0002562 0000b32
Text: MINI-MELF-SMD LL4153 Applications II] Silicon Diode Switching Used in general purpose applications, where a low current controlled forward characteristic and fast switching speed are important. BKC can produce generic equivalents to JAN/ TXJ TXV and S level per
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LL4153
MIL-S-19500/437
LL-34/35
DO-35
Mil-S-19500
DO-213AA)
4031-B
1N4153UR-1
DO-213AA
SMD 437 diode
BKC Semiconductors
DSAIH0002562
0000b32
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SMD 437 diode
Abstract: 1N4153UR-1 1N4153 DO-213AA SMD hr BKC Semiconductors
Text: MINI-MELF-SMD Silicon Diode Applications Switching Used in general purpose applications, where a low current controlled forward characteristic and fast switching speed are important. BKC can produce generic equivalents to J A N / T X / TX V and S level p er
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MlL-S-19500/437
DO-35
Mil-S-19500
LL-34/35
DO-213AA)
4031-B
1N4153UR-1
DO-213AA
1N4153)
SMD 437 diode
1N4153
SMD hr
BKC Semiconductors
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BKC600
Abstract: No abstract text available
Text: B K C INTERNATIONAL 3QE J> • 1171103 00003b0 4 ■ BKC INTERNATIONAL ELECTRONICS, INC. 6 LAKE STREET, LAWRENCE, MA 01841 TEL NO. 508 681-0392 TYPE BKC600 SILICON EPITAXIAL PLANAR DIODE FOR HISH SPEED SWITCHING APPLICATION ABSOLUTE MAXIMUM RATINGS PEAK REVERSE VOLTAGE
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BKC600
200mA
500mW
100mA
200mA
10-200mA
200mA-400mA
BKC600
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BKC600
Abstract: 076V
Text: B K C INTERNATIONAL 3ÜE D • 117*1103 000G3L0 4 ■ BKC INTERNATIONAL ELECTRONICS, INC. 6 LAKE STREET, LAWRENCE, MA 01841 TEL NO. 508 681-0392 TYPE BKC600 SILICON EPITAXIAL PLANAR DIODE FOR HISH SPEED SWITCHING APPLICATION ABSOLUTE MAXIMUM RATINGS PEAK REVERSE VOLTAGE
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000G3L0
BKC600
200mA
500mW
100mA
200mA
10-200mA
BKC600
076V
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DSAIH0002563
Abstract: No abstract text available
Text: ID MINI-MELF-SMD LL4938 Applications Silicon Switching Diode Used in general purpose applications,where high voltage and switching speed are important BKC can produce generic equivalents to JAN / TX TXV and S level per / MIL-S-19500 /1 6 9 with internal source control drawings. Use HR, HRX,
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LL4938
MIL-S-19500
LL-34/35
DO-213AA)
DO-35
4031-B
LL4938
DSAIH0002563
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DIODE Z54
Abstract: No abstract text available
Text: MINI-MELF-SMD Applications LL4150 or LL4150-1 10 Silicon Diode Switching Used in general purpose applications, where a low current controlled forw ard characteristic and fast sw itching speed are im portant. BKC can produce generic equivalents to JAN/ TX; TXV and S level per
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LL4150
LL4150-1
MIL-S-19500/
LL-34/35
DO-213AA
DO-35
10-REF
031-A
DIODE Z54
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BKC Semiconductors
Abstract: No abstract text available
Text: MINI-MELF-SMD Applications Silicon Switching Diode Used in genera! purpose applications.where high voltage and switching speed are important. BKC can produce generic equivalents to JAN / TX / TXV and S level per MlL-S-19500 /1 6 9 with internal source control drawings. Use HR, HRX,
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MlL-S-19500
LL-34/35
DO-35
DO-213AA)
4031-B
LL4938
BKC Semiconductors
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SMD DIODE 3s6
Abstract: SMD 3s6 SMD 437 diode S 437 Diode BKC Semiconductors smd diode s6
Text: MINI-MELF-SMD | Applications |_ B H H ] Silicon Diode \•■■■j | Switching Used in general purpose applications, where a low current controlled forward characteristic and fast switching speed are important. BKC can produce generic equivalents to JAN/ T X / TXV and S level per
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MIL-S-195QQ/437
LL-34/35
DO-35
Mil-S-19
DO-213AA)
1N4153UR-1
DO-213AA
1N4153)
SMD DIODE 3s6
SMD 3s6
SMD 437 diode
S 437 Diode
BKC Semiconductors
smd diode s6
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1N4444
Abstract: 1h44
Text: B K C INTERNA TIO NA L BKC International 30E D Electronics, • 1171183 00003 45 ö ■ Inc. T '0 3 -0<n SPEC. HO: ÌH4444 REVISION: 0 Page: 1 MATERIAL <00-35, SILICON DIODE, TYPE 4148, PC 20a UITB SOLDER PLATED LEADS, »INDICATES WHERE CHANGES FROH PREVIOUS ISSUE HERE HADE.
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00Q03M5
1H4444
1N4444
I472BA
50V-1
200ifi-SEE
25/150C
DO-35
1N4444
1h44
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Untitled
Abstract: No abstract text available
Text: MINI-MELF-SMD o Applications Silicon Diode L L 4 1 5 0 1 N r 5 0 U 4 1 R Switching - 1 I D Used in general purpose applications, where a low current controlled forward characteristic and fast switching speed are important. BKC can produce generic equivalents to JAN/ TXZTXV and S level per
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MIL-S-19500/437
LL-34/35
DO-213AA)
DO-35
Mil-S-19
4031-B
1N4150UR-1
DO-213AA
1N4150)
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JTX1N4148-1
Abstract: jtx1n4148 2501A 100C 1N4608 1N4938-1 S4148HRQ T960 35 marking
Text: B K C m IN TE R N A TIO N A L BKC International Electronics Inc. 3QE D • 1 1 7 ^ 0 3 DDÜ0BS5 S ■ ' T ' 0 3 - O cî t ;~ v \ 6 Lake Street Lawrence, MA USA 01841 SPEC. NO: I1N4608 REVISION: A Paw: 1/ 1 MATERIAL 00-35, SILICON DIODE, TYPE 4607, PC 20f ttlTH SOLDER PLATED LEADS. [
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-p03-OcT
tlN4608
1N4608
j25ilA
S4148HRQ
1N4148-1JAN
100mA
DO-35
JTX1N4148-1
jtx1n4148
2501A
100C
1N4938-1
S4148HRQ
T960
35 marking
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1N4938
Abstract: No abstract text available
Text: ¡•i" - v - v . 11 7cî'1û3 00D0357 M I 30E D B K C INTERNATIONAL s ¡r n~'03-0°i BKC IN TE RNATIONAL ELECTRONICS, INC. 6 LAKE STREET, LAWRENCE, MA 01B41 TE L NO. 508 6 8 1- 03 92 TYPE 1N4938 (SILICON DIODE) AB SO L U T E MA XI MU M RA TI NG S PEAK RE VE RS E VO LTABE
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T-03-DÂ
1N4938
250mW
100mA
DO-35
1N4938
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Untitled
Abstract: No abstract text available
Text: 3DE D B K C INTERNATIONAL • 1171103 0000341 S ■ " p Q ^ - O 0! BKC INT ER NA TI ON AL ELECT RON ICS , INC* 6 LAKE STREET, LAWRENCE, MA 01841 TEL NO. 508 681-0392 E NG I N E E R I N G D A T A SHEET TYPE 1N4448 M E T A L L U R G I A L L Y BONDED, SILIC ON PLA NA R DIODE,
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1N4448
150mA
500mW
---25nA
DO-35
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q292
Abstract: 100C 1N3595 1N3595-1 1N5194 1M3595-1 BKC International MIL-STD-202 METHOD 208 ir2150e
Text: B K C INTERNATIONAL 30E D • 117*Hfl3 D0G0350 1 « T ' 0 \ - 0 \ BKC IN TE RNATIONAL ELECTRONICS, INC. 6 LAKE STREET, LAWRENCE, M A 01841 TEL NO. 508 681-0392 EN GI N E E R I N G D A T A SHEET TYPE 1N5194 M E T A L L U R G I A L L Y BONDED, SI LICON PLANAR DIODE, DO UB LE PLUG CO NS TR UC TI ON
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D0G0350
1N5194
200mA
250mW
100mA
4031-B
MIL-STD-750
q292
100C
1N3595
1N3595-1
1N5194
1M3595-1
BKC International
MIL-STD-202 METHOD 208
ir2150e
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a33 smd diode
Abstract: smd diode a33 BKC Semiconductors smd a33 BKC diode do35 DSAIH0002559 LL3595 Bkc SMD
Text: Low Leakage Diode 1N3595 Applications I DO-35 Glass Package Used in instrumentation applications, where low leakage and high voltage isolation are important. DO-35 Glass Package Features • • • • • • nominal dimensions Six sigma quality Metallurgical^ bonded
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1N3595
LL-34/35
Mil-S-19500/24"
DO-35
MIL-STD-750
1N3595-1
DO-213AA
LL3595)
a33 smd diode
smd diode a33
BKC Semiconductors
smd a33
BKC diode do35
DSAIH0002559
LL3595
Bkc SMD
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Untitled
Abstract: No abstract text available
Text: Silicon Switching Diode 1N4150 Applications 1 DO-35 Glass Package Used in general purpose applications,where a controlled forward characteristic and fast switching speed are important. Features • • • DO-35 Glass Package nominal dimensions Six sigma quality
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1N4150
DO-35
LL-34/35
Mil-S-19500/231
1N4150
DO-213AAcomes
LL4150)
1N4150UR-1
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LL4148 melf
Abstract: BKC Semiconductors DSAIH0002549
Text: LL4148 or MINI-MELF-SMD Silicon Switching Diode 1N4148UR-1 Applications 1N4148UR-1 BCP Used in general purpose applications, where performance, space and switching speed are important. This Best Commercial Practice part is assembled on the same exacting line as our /116 military level products.
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LL4148
1N4148UR-1
1N4148UR-1
LL-34/35
DO-35
Mil-S-19500/116
1N4148-1
DO-35glass
LL4148 melf
BKC Semiconductors
DSAIH0002549
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Untitled
Abstract: No abstract text available
Text: Silicon Switching Diode 1N4454 Applications I DO-35 Glass Package Used in general purpose applications, where performance and switching speed are important. DO-35 Glass Package Features • • • • • • • nominal dimensions glasso.ozr Six sigma quality
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1N4454
DO-35
LL-34/35
Mil-S-19500/144
100mA,
1N4454-1
DO-213AA
LL4454)
1N4454UR-1)
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