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    BUV83

    Abstract: BUV82 T-33-73
    Text: N AMER P H I L I P S / D I S C R E T E SSE D y\nS3' 31 QDlfl^n 4 BUV82 BUV83 r - 3 3 - 13 SILICON DIFFUSED POWER TRANSISTORS High voltage, high speed switching npn power transistor in plastic S O T 9 3 envelope, intended for use in converters, inverters, switching regulators, motor control systems and switching applications.


    OCR Scan     		PDF BUV82 BUV83 r-33-13 BUV82 T-33-13 7Z92935 EiTj-100 BUV83 T-33-73

    bfa53

    Abstract: RZ2833B30W
    Text: -_ -»-• N AMER PHILIPS/DISCRETE OLE D ■ —. 1^53^31 X 0015247 T ■ RZ2833B30V\T^ 13 M ICROW AVE POW ER T R A N SISTO R NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier, operating in the 2.8 to 3.3 GHz frequency range.


    OCR Scan     		PDF RZ2833B30W 01SE4T T-33-13 100/js; bfa53 RZ2833B30W