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    BUZ84

    Abstract: t03 package transistor pin dimensions BU184 TRANSISTOR 13-h
    Text: N AMER PHILIPS/DISCRETE ObE D • ^53=131 QDlMblt 1 ■ BUZ 84 ^ - 5 ^ 1 3 PowerMOS transistor July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in


    OCR Scan     		PDF BUZ84 Q0147QE T-39-13 BIXZ84 BUZ84 t03 package transistor pin dimensions BU184 TRANSISTOR 13-h

    BUZ84

    Abstract: t03 package transistor pin dimensions V103 TRANSISTOR V103 transistor t03 buz84 ma
    Text: N AMER PH IL IPS/ DI SC RE TE ObE D P o w e rM O S tra n s is to r • ^53=131 QDlMblt 1 ■ B U Z 84 ^ - 5 ^ 1 3 July 1987 QUICK REFERENCE DATA PARAMETER SYMBOL Draln-source voltage VDS Drain current d.c. Id Total p*wer dissipation *tot Drain-source on-state resistance


    OCR Scan     		PDF BUZ84 ttS3131 T-39-13 Q0147QE t03 package transistor pin dimensions V103 TRANSISTOR V103 transistor t03 buz84 ma