Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BI-METAL THERMAL SWITCH Search Results

    BI-METAL THERMAL SWITCH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BI-METAL THERMAL SWITCH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    resistor 51k 20 watt

    Abstract: SMHP
    Text: MODEL SMHP SMHP Series • 20W High Power Resistors • TO-263 Surface Mount • RoHS Compliant. FEATURES • Non-Inductive, Small, 20 Watt high power resistor. • TO-263 surface mount package offering a very low thermal resistance. • Small thin package for high density PCB installation.


    Original     		PDF O-263 0R100 resistor 51k 20 watt SMHP

    5d surface mount diode

    Abstract: No abstract text available
    Text: MODEL SMHP 35 SMHP 35 Series • 35W High Power Resistors • TO-263 Surface Mount • RoHS Compliant. FEATURES • Non-Inductive, Small, 35 Watt high power resistor. • TO-263 surface mount package offering a very low thermal resistance. • Small thin package for high density PCB installation.


    Original     		PDF O-263 0R100 5d surface mount diode

    STK412-750

    Abstract: STK282-170-E STK350-530t stk*282-170 STK412 440 stk282 270 STK 412-770 stk412 770 STK282-170-E sanyo stk433-870
    Text: Designed & produced by Triad. www.triad.uk.com Semelab Limited Coventry Road, Lutterworth Leicestershire LE17 4JB, UK Telephone: +44 0 1455 552505 Facsimile: +44 (0)1455 552612 Email: [email protected] Website: www.magnatec-tt.com A subsidiary of TT electronics plc


    Original     		PDF SELT2WA10C SELT2WC10C SELT2WD10C SELT2WE10C SELT2WF10C SELT2WH10C SELT2WJ10C SELT2WK10C SELT2WA13C SELT2WC13C STK412-750 STK282-170-E STK350-530t stk*282-170 STK412 440 stk282 270 STK 412-770 stk412 770 STK282-170-E sanyo stk433-870

    vlt 2900

    Abstract: No abstract text available
    Text: TECHNICAL INFORMATION SOFTWARE FOR CALCULATING POWER CAPABILITY FOR MLC CERAMIC CAPACITORS by John D. Prymak Olean Advanced Products Division AVX Corporation Abstract: The power capability of the ceramic MLC capacitor is a rather complex association of design, material, ambient temperature,


    Original     		PDF infor80-539-1501 S-SCPC00M301-R vlt 2900

    250w schematic diagram motor control

    Abstract: BI 7720 1A NTC 25k BI 7720 7700-2A bi 7700b E4 SMD 7700B h-bridge motor drive circuit BRIDGE RECTIFIER 40 AMP IN LINE WIRE LEAD
    Text: bi441 short form 2007 dev.qxd 6/26/07 8:59 AM Page 23 23 Hybrid Microcircuits Standard Hybrid Microcircuits Power Modules Power Factor Correction Power Modules H-Bridge Model 7700B 7700-2A 7720 Output Power, Watts 1,500 to 3,000 2,000 to 4,000 500 to 3,000


    Original     		PDF bi441 7700B 700-2A MIL-PRF-38534 TS16949 250w schematic diagram motor control BI 7720 1A NTC 25k BI 7720 7700-2A bi 7700b E4 SMD 7700B h-bridge motor drive circuit BRIDGE RECTIFIER 40 AMP IN LINE WIRE LEAD

    2N914

    Abstract: bi 370 transistor transistor 2N914 bi 370 transistor e transistor eb 2030
    Text: 2N914 SILICON PLANAR NPN SATURATED LOGIC SWITCH AN D V H F AM P LIFIE R The 2N 914 is a silicon planar epitaxial NPN transistor in Jedec T O -1 8 metal case. It is p rim a rily a universal switch but it is also an excellent high speed, high gain logic and


    OCR Scan     		PDF 2N914 2N914 G-2030 bi 370 transistor transistor 2N914 bi 370 transistor e transistor eb 2030

    BSV59

    Abstract: No abstract text available
    Text: BSV 59 SILICON PLANAR NPN H IG H -SPE ED S A T U R A T E D SWITCH The BSV 59 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is intended for high speed switching applications at collector currents up to 500 mA. A BSOLUTE M A X IM U M R A TIN G S


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Æ T SGS-THOMSON n lsi S IIL[iCTISÎ iD©S BFY50/51 MEDIUM POWER AMPLIFIER DESCRIPTION The BFY50 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear and switching applications. INTERNAL SCHEMATIC DIAGRAM


    OCR Scan     		PDF BFY50/51 BFY50 BFY52 BFY50 BFY51 BFY50/BFY51 P008B

    3009

    Abstract: 2N3013 ss-112 2N3014 2n3009
    Text: 2N 3009 2N 3013 2N 3014 SILICON PLANAR NPN HIGH-SPEED SATURATED SWITCHES The 2N 3009, 2N 3013 and 2N 3014 are silicon planar epitaxial NPN transistors in Jedec T O -1 8 metal case, intended fo r high-speed, low -saturation switching application up to 300 mA.


    OCR Scan     		PDF

    BUV48I

    Abstract: BUV48AF1 BUV48F1 SGS V48A BUV48FI bux48a equivalent SGS V48A WITH CIRCUIT DIAGRAM bux48 equivalent I v48a BUX47
    Text: 7# SCS-THOMSON BUX47/V47/V47FI BUX47A/V47A/47AFI HIGH VOLTAGE POWER SWITCH ESCRIPTION he BUX47/A, BUV47/A, BUV47F1/AFI are silicon mltiepitaxial mesa NPN transistors mounted resoctively in TO-3 metal case, TO-218 piastic ackage and ÎSOWATT218 fully isolated package,


    OCR Scan     		PDF BUX47/V47/V47FI BUX47A/V47A/47AFI BUX47/A, BUV47/A, BUV47FI/AFI O-218 SOWATT218 BUX47 BUV47 BUV48I BUV48AF1 BUV48F1 SGS V48A BUV48FI bux48a equivalent SGS V48A WITH CIRCUIT DIAGRAM bux48 equivalent I v48a

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON BUX12 HIGH CURRENT, HIGH SPEED, HIGH POWER D E S C R IP T IO N The BUX12 is a silicon multiepitaxial planar NPN transistor in Jedec TO-3 metal case, intended for use in switching and linear applications in military and industrial equipment. & TO-3


    OCR Scan     		PDF BUX12 BUX12

    Untitled

    Abstract: No abstract text available
    Text: 3QE D r z 7 ^ 7# • 7^237 GQ31ÜÔS =i ■ "T *3 > 5 H 3 S G S -T H O M S O N [i« [F 3 iL i@ ir^ 5 « S _ 2 N 7 0 8 s G S-THOMSON HIGH-SPEED SATURATED SWITCH DESCRIPTIO N The 2N708 is a silicon planar epitaxial NPN transis­ tor in Jedec TO-18 metal case, designed for very


    OCR Scan     		PDF 2N708

    bu326a

    Abstract: bu326
    Text: 7^537 0056557 0 • *T" 3>~S-\3 SGS-THOMSON M tg[^ »[i(M i«S_ S G S-TH0MS0N BU326 BU326A 3QE P HIGH VOLTAGE POWER SWITCH DESC RIPTIO N The BU326 and BU326A are silicon multiepitaxial mesa NPN transistors in Jedec TO-3 metal case particularly intended for switch-mode CTV supply


    OCR Scan     		PDF BU326 BU326A BU326 BU326A 10Oii BU326-BU326A BU326-B U326A

    Untitled

    Abstract: No abstract text available
    Text: r Z ^ 7 7 S G # S - T H O M S O N 2 N 2 9 0 5 A [ïfflO e œ ilL H e r a « ® 2 N 2 9 0 7 A GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2905A and 2N2907A are silicon planar epitaxial PNP transistors in Jedec TO-39 for 2N2905A and in Jedec TO-18 (for 2N2907A)


    OCR Scan     		PDF 2N2905A 2N2907A 2N2905A) 2N2907A) 2N2906A 2N2905A/2N2907A P008B

    buw44

    Abstract: BUW45 ic Lb 598 BUW46
    Text: r z 7 SGS-THOMSON ^7# BUW44/BUW45 BUW46 HIGH VOLTAGE, HIGH CURRENT POWER SWITCH DESCRIPTIO N The BUW44, BUW45 and BUW46 are multiepitaxial mesa NPN transistors in Jedec TO-3 metal case intended in fast switching applications for high output powers. TO-3 ABSO LU TE M AXIM UM RATING S


    OCR Scan     		PDF BUW44/BUW45 BUW46 BUW44, BUW45 BUW46 7250V BUW44/BUW45/BUW46 buw44 ic Lb 598

    Untitled

    Abstract: No abstract text available
    Text: rZ 7 SGS-THOMSON ^ 7 # IMæmi@¥l lî!]0 gt BDY90 BDY91 HIGH CURRENT NPN SILICON TRANSISTOR . BDY90 IS SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The BDY90 and BDY91 are silicon epitaxial planar NPN power transistors in Jedec TO-3 metal case. They are intented for use in switching


    OCR Scan     		PDF BDY90 BDY91 BDY90 BDY91 00bS176 BDY90/BDY91 P003N RSI09D68

    BSX39

    Abstract: transistor bsx39
    Text: BSX39 SILICON PLANAR NPN HIGH-SPEED SATURATED SWITCH The BSX 39 is a silicon planar epitaxial NPN transistor in Jedec T O -1 8 metal case. It is designed fo r very fast switching applications up to 500 mA. ABSOLUTE MAXIMUM RATINGS V CBO V CEO V ebo 'c ^ to t


    OCR Scan     		PDF BSX39 BSX39 30rnA G-3125 transistor bsx39

    2N4036

    Abstract: No abstract text available
    Text: 2N 4036 SILICON PLANAR PNP M EDIUM-SPEED SWITCH The 2N 4036 is a silicon planar epitaxial PNP transistor in Jedec T O -3 9 metal case. It is intended particularly as medium speed saturated switch and general purpose am plifier. ABSOLUTE M A X IM U M RATINGS


    OCR Scan     		PDF -100/xA -15mA 2N4036

    2369A

    Abstract: 2n2369a
    Text: 2N 2369A SILICON PLANAR NPN HIGH-SPEED S ATU R ATED SWITCH The 2N 2369A is a silicon planar epitaxial NPN transistor in Jedec T O -1 8 metal case. It is designed specifically fo r high-speed saturated switching applications at current levels from 100 ,uA to 100 mA.


    OCR Scan     		PDF

    Transistor BsX 26

    Abstract: transistor BSX26 BSX26 so103 SO 103
    Text: B s x 26 SILICON PLANAR NPN H IG H -SP E ED S A T U R A T E D SWITCH The BSX 26 ¡s a silicon planar epitaxial NPN transistor in Jedec T O -18 metal case. It is designed for switching applications up to 500mA. A B S O L U T E M A X IM U M R A T IN G S VcBO


    OCR Scan     		PDF 500mA. 300mA Transistor BsX 26 transistor BSX26 BSX26 so103 SO 103

    Untitled

    Abstract: No abstract text available
    Text: 2N2219A 2N2222A HIGH SPEED SWITCHES DESCRIPTION The 2N2219A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec TO-39 for 2N2219A and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to


    OCR Scan     		PDF 2N2219A 2N2222A 2N2219A 2N2222A 2N2219A) 2N2222A) 500mA,

    2n4033

    Abstract: No abstract text available
    Text: 30E D • 7^237 GQ312D7 fi ■ SGS-THOMSON ~T'37-l5 2N4030-2N4031 2N 4032-2N 4033 S G S-THOMSON GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N4030,2N4031, 2N4032, and 2N4033 are si­ licon planar epitaxial PNP transistors in Jedec TO-39 metal case primarily intended for large signal,


    OCR Scan     		PDF GQ312D7 37-l5 2N4030-2N4031 4032-2N 2N4030 2N4031, 2N4032, 2N4033 2N4030 2N4032

    2N914

    Abstract: transistor 2N914 24si
    Text: 2N914 SILICON PLANAR NPN SATURATED LOGIC SWITCH AND V H F AM PLIFIER The 2N 914 is a silicon planar epitaxial NPN transistor in Jedec T O -1 8 metal case. It is prim a rily a universal switch b u t it is also an excellent high speed, high gain logic and memory driver at collector currents up to 500 mA.


    OCR Scan     		PDF G-2027 G-202, 2N914 2N914 transistor 2N914 24si

    2n3252

    Abstract: No abstract text available
    Text: 2N 3250 2N 3251 SILICON PLANAR PNP AMPLIFIERS AND SWITCHES The 2N 3250 and 2N 3251 are silicon planar epitaxial PNP transistors in Jedec T O -1 8 metal case. They are suited fo r switching and am plifier applications. ABSOLUTE MAXIMUM RATINGS VcBO V CEO V ebo


    OCR Scan     		PDF -100MA 20x10 2n3252