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    BI-DIRECTIONAL N-CHANNEL MOSFET Search Results

    BI-DIRECTIONAL N-CHANNEL MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BI-DIRECTIONAL N-CHANNEL MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR K3519PQ-XH TECHNICAL DATA Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The K3519PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration.


    Original     		PDF K3519PQ-XH K3519PQ-XH

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR K3519PQ-XH TECHNICAL DATA Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The K3519PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration.


    Original     		PDF K3519PQ-XH K3519PQ-XH 180um 470ea

    k351

    Abstract: common-drain
    Text: SEMICONDUCTOR K3519PQ-XH TECHNICAL DATA Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The K3519PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration.


    Original     		PDF K3519PQ-XH K3519PQ-XH 180um 470ea k351 common-drain

    K352

    Abstract: K3520PQ-XH K3520
    Text: SEMICONDUCTOR K3520PQ-XH TECHNICAL DATA Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The K3520PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration.


    Original     		PDF K3520PQ-XH K3520PQ-XH 180um 470ea K352 K3520

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR K3520PQ-XH TECHNICAL DATA Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The K3520PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration.


    Original     		PDF K3520PQ-XH K3520PQ-XH 180um 470ea

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR K3520PQ-XH TECHNICAL DATA Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The K3520PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration.


    Original     		PDF K3520PQ-XH K3520PQ-XH

    74153

    Abstract: si6888
    Text: SPICE Device Model Si6888EDQ Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si6888EDQ 18-Jul-08 74153 si6888

    Si8900EDB

    Abstract: No abstract text available
    Text: SPICE Device Model Si8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si8900EDB 18-Jul-08

    Si8904EDB

    Abstract: No abstract text available
    Text: SPICE Device Model Si8904EDB Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si8904EDB 18-Jul-08

    Si8902EDB

    Abstract: No abstract text available
    Text: SPICE Device Model Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si8902EDB S-60075Rev. 23-Jan-06

    Si8902EDB

    Abstract: No abstract text available
    Text: SPICE Device Model Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si8902EDB 18-Jul-08

    74152

    Abstract: 74152 data sheet 74152 datasheet si6868
    Text: SPICE Device Model Si6868EDQ Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si6868EDQ 18-Jul-08 74152 74152 data sheet 74152 datasheet si6868

    Si8904EDB

    Abstract: No abstract text available
    Text: SPICE Device Model Si8904EDB Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si8904EDB S-60075Rev. 23-Jan-05

    Si8900EDB

    Abstract: A1731
    Text: SPICE Device Model Si8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si8900EDB S-60073Rev. 23-Jan-06 A1731

    LND01K1-G

    Abstract: No abstract text available
    Text: Supertex inc. LND01 Lateral N-Channel Depletion-Mode MOSFET General Description Features ►► Bi-directional ►► Low on-resistance ►► Low input capacitance ►► Fast switching speeds ►► High input impedance and high gain ►► Low power drive requirement


    Original     		PDF LND01 LND01 DSFP-LND01 A042712 LND01K1-G

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. LND01 Lateral N-Channel Depletion-Mode MOSFET General Description Features ►► Bi-directional ►► Low on-resistance ►► Low input capacitance ►► Fast switching speeds ►► High input impedance and high gain ►► Low power drive requirement


    Original     		PDF LND01 LND01 DSFP-LND01 A073012

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. LND01 Lateral N-Channel Depletion-Mode MOSFET General Description Features ►► Bi-directional ►► Low on-resistance ►► Low input capacitance ►► Fast switching speeds ►► High input impedance and high gain ►► Low power drive requirement


    Original     		PDF LND01 LND01 DSFP-LND01 B031414

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. LND01 Lateral N-Channel Depletion-Mode MOSFET General Description Features ►► Bi-directional ►► Low on-resistance ►► Low input capacitance ►► Fast switching speeds ►► High input impedance and high gain ►► Low power drive requirement


    Original     		PDF LND01 LND01 DSFP-LND01 NR073012

    Si6876BEDQ

    Abstract: No abstract text available
    Text: Si6876BEDQ New Product Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rS1S2(on) (Ω) IS1S2 (A) 0.026 @ VGS = 10 V 6.0 D TrenchFETr Power MOSFET D Ultra-Low rSS(on) D 4-kV ESD Protection 0.030 @ VGS = 4.5 V 5.5 APPLICATIONS


    Original     		PDF Si6876BEDQ Si6876BEDQ-T1--E3 S-40581--Rev. 29-Mar-04

    Untitled

    Abstract: No abstract text available
    Text: Si6876EDQ New Product Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rS1S2(on) (Ω) IS1S2 (A) 0.025 @ VGS = 10 V 6.2 D TrenchFETr Power MOSFET D Ultra-Low rSS(on) D 4-kV ESD Protection 0.030 @ VGS = 4.5 V 5.7 APPLICATIONS


    Original     		PDF Si6876EDQ 08-Apr-05

    Si6876BEDQ

    Abstract: Si6876EDQ SI6876EDQT1E3
    Text: Specification Comparison Vishay Siliconix Si6876BEDQ vs. Si6876EDQ Description: Bi-Directional N-Channel, 30 V D-S MOSFET Package: TSSOP-8 Pin Out: Identical Part Number Replacements: Si6876BEDQ-T1 Replaces Si6876EDQ-T1 Si6876BEDQ-T1-E3 (Lead (Pb)-free version) Replaces Si6876EDQ-T1-E3 (Lead (Pb)-free version)


    Original     		PDF Si6876BEDQ Si6876EDQ Si6876BEDQ-T1 Si6876EDQ-T1 Si6876BEDQ-T1-E3 Si6876EDQ-T1-E3 09-Nov-06 SI6876EDQT1E3

    DIODE S2

    Abstract: 21A 8 BALL IRF6156
    Text: PD - 94592 IRF6156 Ultra Low RSS on per Footprint Area l Low Thermal Resistance l Bi-Directional N-Channel Switch l Super Low Profile (<.8mm) l Available Tested on Tape & Reel l ESD Protection Diode † Description l FlipFET Power MOSFET VSS 20V RSS(on) max


    Original     		PDF IRF6156 IA-481 IA-541. DIODE S2 21A 8 BALL IRF6156

    5G2R

    Abstract: Si6876EDQ
    Text: Si6876EDQ New Product Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rSS(on) (Ω) IS1S2 (A) 0.025 @ VGS = 10 V 6.2 D TrenchFETr Power MOSFET D Ultra-Low rSS(on) D 4-kV ESD Protection 0.030 @ VGS = 4.5 V 5.7 APPLICATIONS


    Original     		PDF Si6876EDQ S-20462--Rev. 15-Apr-02 5G2R

    Siliconix 511

    Abstract: No abstract text available
    Text: SÌ3831DV Vishay Siliconix Bi-Directional P-Ch MOSFET/Power Switch New Product V B* V > Ros (o n (&) ±7 Id W 0 .170 VGg = -4 .5 V ±2.4 0.240 @ VGS = “ 2-5 V ±2,0 & FEATURES • • • • Low rps(on) Symmetrical P-Channel MOSFET Integrated Body Bias For Bi-Directional Blocking


    OCR Scan     		PDF 3831DV 988-B000 S-56944-- 23-Nov-98 Siliconix 511