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    Infineon Technologies AG BFY182PZZZA1

    Trans GP BJT NPN 12V 0.035A 4-Pin Micro-X1 Box (Alt: SP000011410)
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    Infineon Technologies AG BFY182ESZZZA1

    Trans GP BJT NPN 12V 0.035A 4-Pin Micro-X1 Box (Alt: SP000011423)
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    EBV Elektronik BFY182ESZZZA1 26 Weeks 1
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    BFY182 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFY182 Infineon Technologies BFY182 Original PDF
    BFY182 Siemens HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) Original PDF
    BFY182 (ES) Infineon Technologies HiRel Silicon Bipolar Transistors; Package: CG-uX-4; Package: Micro-X; VCEO (max): 12.0 V; IC(max): 35.0 mA; Ptot (max): 250.0 mW; fT (typ): 8.0 GHz; Original PDF
    BFY182ES Infineon Technologies HiRel NPN Silicon RF Transistor Original PDF
    BFY182ES Siemens HiRel NPN silicon RF transistor Original PDF
    BFY182H Infineon Technologies HiRel NPN Silicon RF Transistor Original PDF
    BFY182H Siemens HiRel NPN silicon RF transistor Original PDF
    BFY182P Infineon Technologies HiRel NPN Silicon RF Transistor Original PDF
    BFY182P Siemens HiRel NPN silicon RF transistor Original PDF
    BFY182S Infineon Technologies HiRel NPN Silicon RF Transistor Original PDF
    BFY182S Siemens HiRel NPN silicon RF transistor Original PDF

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    BFY182

    Abstract: No abstract text available
    Text: BFY182 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • Hermetically sealed microwave package • fT = 8GHz F = 2.4dB at 2GHz • esa Space Qualified


    Original     		PDF BFY182 BFY182

    BFY182

    Abstract: No abstract text available
    Text: BFY182 HiRel NPN Silicon RF Transistor •     HiRel Discrete and Microwave Semiconductor 4 3 1 2 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.4 dB at 2 GHz


    Original     		PDF BFY182 BFY182

    Untitled

    Abstract: No abstract text available
    Text: BFY182 HiRel NPN Silicon RF Transistor •     HiRel Discrete and Microwave Semiconductor 4 3 1 2 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.4 dB at 2 GHz


    Original     		PDF BFY182

    BFY182

    Abstract: No abstract text available
    Text: BFY182 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. • Hermetically sealed microwave package • fT= 8 GHz F = 2.4 dB at 2 GHz •


    Original     		PDF BFY182 Q62702F1608 QS9000 BFY182

    on semiconductor marking code A04

    Abstract: marking A04 C BFY182
    Text: HiRel NPN Silicon RF Transistor BFY 182 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.4 dB at 2 GHz


    Original     		PDF Q62702F1608 Q62702F1714 BFY182 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 on semiconductor marking code A04 marking A04 C

    Microwave PIN diode

    Abstract: 50kRad BFY196 S microwave fet IC CGY40 krad microwave transistor bfy193 t359 BFY193 ic radiation
    Text: HiRel Discrete & Microwave Semiconductors HiRel Discrete & Microwave Semiconductors Radiation Hardness Analysis/Data of Family types: family given in bracketts • CGY40: (CGY41), Side 2 • CFY66: (CFY67), Side 3 • BXY42: (BXY43, BXY44), Side 4 - 5 • BFY193: (BFY180, BFY280,


    Original     		PDF CGY40: CGY41) CFY66: CFY67) BXY42: BXY43, BXY44) BFY193: BFY180, BFY280, Microwave PIN diode 50kRad BFY196 S microwave fet IC CGY40 krad microwave transistor bfy193 t359 BFY193 ic radiation

    GaAs Amplifier Micro-X Marking k

    Abstract: gaas fet micro-X Package marking GaAs Amplifier Micro-X BFY193 BFY40 CFY66 BFY420 BFY193 Microx Microwave Semiconductors transistor "micro-x" "marking" 3
    Text: HiRel Discrete and Microwave Semiconductors Table of Contents Title Component Types Package Types Page 1 Preliminary Remarks 2 2 2.1 2.2 2.3 Introduction to HiRel and Space Qualified Devices General Silicon Devices GaAs Devices 2 2 3 3 3 3.1 3.2 3.3 Quality Specifications of HiRel Components


    Original     		PDF HPAC140 MWP-25 MWP-35 GaAs Amplifier Micro-X Marking k gaas fet micro-X Package marking GaAs Amplifier Micro-X BFY193 BFY40 CFY66 BFY420 BFY193 Microx Microwave Semiconductors transistor "micro-x" "marking" 3

    BXY 36 300

    Abstract: cfy66 GHZ micro-X Package BFY19 CFY67-08 107 micro-x BFY183 BFY420 Microwave Semiconductors BFY193 Microx
    Text: SIEMENS 4 HiRel Discrete and Microwave Semiconductors Selection Guides for HiRel Discrete Semiconductors The Selection Guide provides main maximum ratings and electrical key parameters typical data . 4.1 HiRel Silicon Diodes Low Barrier Silicon Schottky Diodes


    OCR Scan     		PDF BAT15-013/014 BAT15-033/034 BAT15-043/044 BAT15-063/064 BAT15-073/074 BAT15-093/094 BAT15-103/104 MWP-25 MWP-35 BXY 36 300 cfy66 GHZ micro-X Package BFY19 CFY67-08 107 micro-x BFY183 BFY420 Microwave Semiconductors BFY193 Microx