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Texas Instruments DLP6500BFYE Display Drivers & Controllers DLP® 0.65 1080p s600 DMD 350-CPGA 0 to 90
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	DLP6500BFYE		26			1 $887.1 10 $887.1 100 $887.1 1000 $887.1 10000 $887.1	Buy Now
Texas Instruments DLP5500BFYA Display Drivers & Controllers 0.55 XGA DMD
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Mouser Electronics	DLP5500BFYA		5			1 $616.83 10 $616.82 100 $616.82 1000 $616.82 10000 $616.82	Buy Now
Pulse Electronics Corporation BBFY00100505221YHP Ferrite Beads Chilisin EMI BEAD FILETER For GHz Band General Use
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Mouser Electronics	BBFY00100505221YHP					1 $0.16 10 $0.084 100 $0.058 1000 $0.043 10000 $0.035	Get Quote
Pulse Electronics Corporation BBFY00100505121YHP Ferrite Beads Chilisin EMI BEAD FILETER For GHz Band General Use
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Mouser Electronics	BBFY00100505121YHP					1 $0.16 10 $0.086 100 $0.066 1000 $0.043 10000 $0.035	Get Quote
Pulse Electronics Corporation BBFY00100505301YHN Ferrite Beads Chilisin EMI BEAD FILETER For GHz Band General Use
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Mouser Electronics	BBFY00100505301YHN					1 - 10 - 100 - 1000 - 10000 $0.036	Get Quote

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BFY 50 Datasheets (62)

Part	Manufacturer	Description	Datasheet Type	PDF
BFY50	Central Semiconductor	Leaded Small Signal Transistor General Purpose - Pol=NPN / Pkg=TO39 / Vceo=35 / Ic=1 / Hfe=30min / fT(Hz)=60M / Pwr(W)=0.8	Original	PDF
BFY50	Philips Semiconductors	Small-signal Transistors	Original	PDF
BFY50	Philips Semiconductors	NPN medium power transistors - Pol=NPN / Pkg=TO39 / Vceo=35 / Ic=1 / Hfe=30min / fT(Hz)=60M / Pwr(W)=0.8	Original	PDF
BFY50	Semelab	Medium Power Amplifiers NPN Silicon Planar Transistor - Pol=NPN / Pkg=TO39 / Vceo=35 / Ic=1 / Hfe=30min / fT(Hz)=60M / Pwr(W)=0.8	Original	PDF
BFY50	STMicroelectronics	MEDIUM POWER AMPLIFIER	Original	PDF
BFY50	Continental Device India	Semiconductor Device Data Book 1996	Scan	PDF
BFY50	Crimson Semiconductor	Transistor Selection Guide	Scan	PDF
BFY50	Diode Transistor	SMALL SIGNAL TRANSISTORS	Scan	PDF
BFY50	Fairchild Semiconductor	Misc. Data Book Scans 1975/76	Scan	PDF
BFY50	Fairchild Semiconductor	Full Line Condensed Catalogue 1977	Scan	PDF
BFY50	Ferranti Semiconductors	Metal Can Transistors (Short Form)	Scan	PDF
BFY50	Ferranti Semiconductors	Shortform Data Book 1971	Short Form	PDF
BFY50	Ferranti Semiconductors	Quick Reference Guide 1985	Scan	PDF
BFY50	ITT Semiconductors	Semiconductor Summary 1969	Scan	PDF

BFY50	Micro Electronics	Semiconductor Device Data Book	Scan	PDF
BFY50	Micro Electronics	Semiconductor Devices	Scan	PDF
BFY50	Motorola	Motorola Transistor Datasheets	Scan	PDF
BFY50	Motorola	The European Selection Data Book 1976	Scan	PDF
BFY50	Motorola	European Master Selection Guide 1986	Scan	PDF
BFY50	Mullard	Quick Reference Guide 1977/78	Scan	PDF

BFY 50 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Amphenol Aerospace MIL-DTL-83723, Series III, Pyle Hermetic Jam Nut D-Hole Mount Receptacle, Threaded Coupling II M83723/89Y / M83723/89P BTY/BFY/BNY-19 I Fully Mated Band† G Dia. SJT 38999 III PART # .781/ .761 Max. 19.83/19.32 Max. N Contact Stickout	Original	PDF	MIL-DTL-83723, M83723/89Y M83723/89P BTY/BFY/BNY-19 EN2997Y7 ESC10YE3 ESC11YE3 brea35
Untitled Abstract: No abstract text available Text: Amphenol Aerospace MIL-DTL-83723, Series III, Pyle BTY/BFY/BNY-17 N Contact Stickout ESC11YE2 26482 Solderwell Contacts J Coupling Thread Optional Eyelet Contacts 5015 † When fully mated with plug this band will be covered. Band is red on military types; can be red or blue on	Original	PDF	MIL-DTL-83723, BTY/BFY/BNY-17 ESC11YE2
A03 transistor Abstract: BFY280 Text: HiRel NPN Silicon RF Transistor BFY 280 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, low power amplifiers at collector currents from 0.2 mA to 8 mA ¥ Hermetically sealed microwave package ¥ fT = 7.2 GHz, F = 2.5 dB at 2 GHz ¥	Original	PDF	Q97302026 Q97111414 BFY280 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 A03 transistor
marking A04 Abstract: BFY181 p 181 V Q62702F1715 Text: HiRel NPN Silicon RF Transistor BFY 181 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.2 dB at 2 GHz	Original	PDF	Q62702F1607 Q62702F1715 BFY181 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 marking A04 p 181 V Q62702F1715
on semiconductor marking code A04 Abstract: marking A04 C BFY182 Text: HiRel NPN Silicon RF Transistor BFY 182 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.4 dB at 2 GHz	Original	PDF	Q62702F1608 Q62702F1714 BFY182 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 on semiconductor marking code A04 marking A04 C
A03 transistor Abstract: microwave transducer BFY196 BFY 36 transistor Text: HiRel NPN Silicon RF Transistor BFY 196 Features ¥ ¥ ¥ ¥ ¥ ¥ HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz. For linear broadband amplifiers Hermetically sealed microwave package fT = 6.5 GHz, F = 3 dB at 2 GHz	Original	PDF	Q62702F1684 BFY196 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 A03 transistor microwave transducer BFY 36 transistor
A03 transistor Abstract: BFy 90 transistor microwave transducer BFY183 marking code microwave Text: HiRel NPN Silicon RF Transistor BFY 183 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.3 dB at 2 GHz	Original	PDF	Q62702F1609 Q62702F1713 BFY183 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 A03 transistor BFy 90 transistor microwave transducer marking code microwave
BFy 90 transistor Abstract: No abstract text available Text: BFY 183 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at co currents from 2mA to 30mA • Hermetically sealed microwave package • fT = 8 GHz F = 2.3 dB at 2 GHz • esa Space Qualified	Original	PDF
A03 transistor Abstract: Q62702F-1610 BFY193 a03 dbm microwave transistor bfy193 24 marking code transistor K 193 transistor Text: HiRel NPN Silicon RF Transistor BFY 193 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers up to 2 GHz. ¥ For linear broadband amplifiers ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.3 dB at 2 GHz	Original	PDF	Q62702F1610 Q62702F1701 BFY193 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 A03 transistor Q62702F-1610 a03 dbm microwave transistor bfy193 24 marking code transistor K 193 transistor
Untitled Abstract: No abstract text available Text: BFY 50 • BFY 51 • BFY 52 NPN MEDIUM POWER M - SILICON PLANAR EPITAXIAL TRANSISTOR I\/IIC=:F?<= E L _ E C 3T R C 3 I M I C : S M ECHANICAL OUTLINE FEA TU RES APPLICATIONS • Low S a tu ra tio n V o lta g e V c E . a i ) • • • 0 . 5 V t yp @ I A	OCR Scan	PDF	BFY50 BOX69477 924ZS, 309022fâ
BFY33 Abstract: BFY34 BFY46 BFY 39 transistor BFY 34 transistor transistor BFY46 BFY 33 transistor N1613 Text: BFY33, BFY34 2N 1613 ; BFY46 (2N 1711) Not for new developm ent NPN-Transistors for universal RF application BFY 33, BFY 34 and BFY 46 are d o u b le -d iffu se d planar NPN silicon RF-transistors in a case 5 C 3 DIN 41873 (T O -3 9 ). The co lle cto r is electrically connected to the case.	OCR Scan	PDF	BFY33, BFY34 BFY46 Q60206-Y33 Q60206-Y34 Q60206-Y46 BFY34, BFY33 BFY34 BFY46 BFY 39 transistor BFY 34 transistor transistor BFY46 BFY 33 transistor N1613
BFY34 Abstract: BFY 34 transistor transistor BFY46 BFY46 BFY33 Q60206-Y46 1613B Text: BFY33, B FY 3 4 2N 1613 ; B FY46 (2N 1711) Not for new development NPN-Transistors for universal RF application BFY 33, BFY 34 and BFY 46 are double-diffused planar NPN silicon R F-transistors in a case 5 C 3 DIN 41873 (TO-39). The collector is electrically connected to thecase.	OCR Scan	PDF	BFY33, BFY34 BFY46 Q60206-Y33 Q60206-Y34 Q60206-Y46 BFY34 BFY 34 transistor transistor BFY46 BFY46 BFY33 Q60206-Y46 1613B
BFY50 Abstract: BFY51 BFY50-BFY51 BFY 52 transistor Text: BFY 50 BFY 51 BFY 52 SILICON PLANAR NPN M E D IU M -P O W E R A M P L IF IE R S The BFY50, BFY51 and E1FY52 are silicon planar epitaxial NPN transistors in Jedec T O -39 metal case. They are intended fo r general purpose linear and switching applications.	OCR Scan	PDF	BFY50, BFY51 EIFY52 70x1CT6 130x1er6 150mA BFY50 BFY50-BFY51 BFY 52 transistor
BFY 52 transistor Abstract: BFY50 BOX69477 022deg BFY 39 transistor Text: BFY 50 • BFY 51 • BFY 52 NPN MEDIUM POWER M - SILICON PLANAR EPITAXIAL TRANSISTOR MICRO EL.ECTRDNIC5 MECHANICAL OUTLINE APPLICATIONS FEA TU R ES • Low Satu ratio n V o lta g e VcE afc • •0 .5 V typ @ IA • Audio A m p lifier O u tp u t Stag e	OCR Scan	PDF	IN/11 80Vmin BFY50 i50mA BOX69477 BFY 52 transistor 022deg BFY 39 transistor

BFY50 Abstract: BFY 50 55x1 BFY51 BFY52 BFY 39 Text: BFY 50 BFY 51 SILICON PLANAR NPN BFY 52 MEDIUM-POWER AMPLIFIERS The B F Y 5 0 , B F Y 51 and B F Y 5 2 are silico n planar e p ita x ia l NPN tran sisto rs in Jedec T O -3 9 m etal case. T he y are inte nd e d fo r general purpose linear and sw itc h in g a p p lica tio n s.	OCR Scan	PDF	BFY50, BFY51 BFY52 i30xicr6 BFY50 BFY 50 55x1 BFY 39
BFY86 Abstract: db347 Scans-0010448 Text: Nicht für Neuentwicklungen Not for new developments BFY 85 • BFY 86 Silizium-NPN-Epitaxial-Planar-Doppeltransistoren Silicon NPN Epitaxial Planar Double Transistors Anwendungen: In Differenzverstärkern Applications: In diffe re n tia l am plifiers Besondere Merkmale:	OCR Scan	PDF
BFY34 Abstract: BFY33 BFY46 transistor BFY46 BFY 34 transistor BFY 39 transistor BFY 33 transistor N1613 Text: BFY33, B FY 3 4 2N 1613 ; B FY46 (2N 1711) Not for new developm ent NPN-Transistors for universal RF application B FY 33, BFY 34 and BFY 46 are double-diffused planar N PN silicon R F-transistors in a case 5 C 3 D IN 41873 (TO-39). The collector is electrically connected to thecase.	OCR Scan	PDF	BFY33, BFY34 BFY46 Q60206-Y33 Q60206-Y34 Q60206-Y46 BFY34, BFY34 BFY33 BFY46 transistor BFY46 BFY 34 transistor BFY 39 transistor BFY 33 transistor N1613
BFY 34 transistor Abstract: transistor BFY46 BFY 39 transistor BFY46 BFY34 BFY33 BFV33 BFY 33 transistor N1613 01BV Text: BFY33, BFY34 2N 1613 ; BFY46 (2N 1711) Not for new development NPN-Transistors for universal RF application B FY 33, BFY 34 and BFY 46 are double-diffused planar N PN silicon R F-transistors in a case 5 C 3 D IN 41873 (TO-39). The collector is electrically connected to thecase.	OCR Scan	PDF	BFY33, BFY34 BFY46 Q60206-Y33 Q60206-Y34 Q60206-Y46 BFY34, BFY 34 transistor transistor BFY46 BFY 39 transistor BFY46 BFY34 BFY33 BFV33 BFY 33 transistor N1613 01BV
BFY56 Abstract: BFY56A BFY 56A ft bfy BFY 20 Text: BFY56 BFY56A SILICON PLANAR NPN A M P L IF IE R S A N D SW ITCHES The BFY 56 and BFY 56A are silicon planar epitaxial NPN transistors in Jedec T O -39 metal case. They are designed fo r am plifier and switching applications over a wide range o f voltage and current.	OCR Scan	PDF	BFY56 BFY56 BFY56A 1x10-" BFY56A BFY 56A ft bfy BFY 20
BFY83 Abstract: bfy82 Text: BFY 83 SILICON PLANAR NPN DUAL, H IG H -VO LTA G E AM PLIFIER The BFY 82 is a six term inal device containing tw o isolated silicon planar epitaxial NPN transistors in Jedec T O -7 7 metal case. The good thermal tracking over a wide current and temperature range, offers the circ u it designer matched transistors w ith specified performance	OCR Scan	PDF	BFY83 100MA BFY83 bfy82
BFY 94 transistor Abstract: No abstract text available Text: SIEM ENS NPN Silicon RF Transistor BFY 90 • For broadband amplifiers up to 1 GHz and non-saturated switches at collector currents from 1 mA to 20 mA. € CECC-type available: GEGC 50002/253. ESD: Electrostatic discharge sensitive device, observe handling precautions!	OCR Scan	PDF	Q62702-F297 235bQ5 0Db74Bl BFY 94 transistor
Untitled Abstract: No abstract text available Text: SIEMENS HiRel NPN Silicon RF Transistor BFY 193 Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers up to 2 GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • f T = 8 GHz, F = 2.3 dB at 2 GHz	OCR Scan	PDF	Q62702F1610 Q62702F1701 BFY193 de/semiconductor/products/35/35 de/semiconductor/products/35/353 BFY193 GXM05552
Untitled Abstract: No abstract text available Text: SIEMENS HiRel NPN Silicon RF Transistor BFY 280 Features • HiRel Discrete and Microwave Semiconductor • For low noise, low power amplifiers at collector currents from 0.2 mA to 8 mA • Hermetically sealed microwave package • f T = 7.2 GHz, F = 2.5 dB at 2 GHz	OCR Scan	PDF	Q97302026 Q97111414 BFY280 de/semiconductor/products/35/35 de/semiconductor/products/35/353 BFY280 GXM05552
BFY88 Abstract: Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288 Text: TELEFUNKEN ELECTRONIC m ilp y M IM electronic Ö1C D • fi^SOQRb 0005332 b 'T- BFY 88 Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: VHF amplifier stages, pre-stages In common emitter configuration Oscillating mixer stages in common base configuration	OCR Scan	PDF	i200Rb D0DS332 ft-11 569-GS 000s154 hal66 if-11 BFY88 Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288

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Texas Instruments DLP6500BFYE

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BFY 50 Datasheets (62)

BFY 50 Datasheets Context Search

Untitled

Untitled

A03 transistor

marking A04

on semiconductor marking code A04

A03 transistor

A03 transistor

BFy 90 transistor

A03 transistor

Untitled

BFY33

BFY34

BFY50

BFY 52 transistor

BFY50

BFY86

BFY34

BFY 34 transistor

BFY56

BFY83

BFY 94 transistor

Untitled

Untitled

BFY88