rf amplifier siemens 10 ghz
Abstract: BFP405 SIEMENS BFP405 BCR400
Text: Application Note No. 019 Discrete & RF Semiconductors G. Lohninger A Low-Noise-Amplifier with good IP3out performance at 1.9 GHz using BFP405 This application note describes a low noise amplifier at 1.9GHz using SIEMENS SIEGET25 BFP405. The design emphasis has been on achieving high output
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BFP405
BFP405.
15dBm
100pF
rf amplifier siemens 10 ghz
BFP405
SIEMENS BFP405
BCR400
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BFP405
Abstract: BCR400 rf amplifier siemens 10 ghz aplication note SIEMENS BFP405
Text: Application Note No. 020 Discrete & RF Semiconductors G. Lohninger A Low-Noise-Amplifier at 1.9 GHz using BFP405 This application note describes a low noise amplifier at 1.9GHz using SIEMENS SIEGET 25 BFP405. The design emphasis has been on achieving a low noise
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BFP405
BFP405.
100pF
BFP405
BCR400
rf amplifier siemens 10 ghz
aplication note
SIEMENS BFP405
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BFP405
Abstract: A03 RF amplifier A03 amplifier BCR400
Text: Application Note No. 021 Discrete & RF Semiconductors G. Lohninger A Low-Noise-Amplifier shows good Noise Figure performance at 1.9 GHz using BFP405 This application note describes a low noise amplifier at 1.9GHz using Siemens SIEGET25 BFP405. The design emphasis has been on achieving a low noise
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BFP405
BFP405.
100pF
BFP405
A03 RF amplifier
A03 amplifier
BCR400
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2Q394
Abstract: rx 3152 BGC405 A12 marking ikr 251 50W rf power transistor 100MHz 500R BFP405 Q62702-G0091 TL18
Text: BGC405 Self-Biased BFP405 l l l l l SIEGET25- Technology Small SCT598-Package Control Pin For Switching The Device Off Current Easy Adjustable By An External Resistor Voltage Independent Current 2V – 4.5V 8 7 6 5 2 1 3 4 VPW05982 ESD: Electrostatic discharge sensitive device, observe
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BGC405
BFP405
SCT598-Package
VPW05982
Q62702-G0091
SCT598
BGC405
2Q394
rx 3152
A12 marking
ikr 251
50W rf power transistor 100MHz
500R
BFP405
Q62702-G0091
TL18
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Untitled
Abstract: No abstract text available
Text: SIEGET 25 BFP405 NPN Silicon RF Transistor 3 For low current applications 4 For oscillators up to 12 GHz Noise figure F = 1.25 dB at 1.8 GHz outstanding G ms = 23 dB at 1.8 GHz 2 Transition frequency f T = 25 GHz Gold metallization for high reliability
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BFP405
VPS05605
OT343
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BFP405
Abstract: BGA420 S21216
Text: BFP405 NPN Silicon RF Transistor • For low current applications 3 • For oscillators up to 12 GHz 2 4 • Noise figure F = 1.25 dB at 1.8 GHz 1 outstanding Gms = 23 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability
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BFP405
OT343
BFP405
BGA420
S21216
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Infineon Technologies transistor 4 ghz
Abstract: BFP405 BGA420
Text: BFP405 NPN Silicon RF Transistor • For low current applications 3 • For oscillators up to 12 GHz 2 4 • Noise figure F = 1.25 dB at 1.8 GHz 1 outstanding Gms = 23 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability
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BFP405
OT343
Infineon Technologies transistor 4 ghz
BFP405
BGA420
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Untitled
Abstract: No abstract text available
Text: BFP405 Low Noise Silicon Bipolar RF Transistor • For low current applications 3 • For oscillators up to 12 GHz 2 4 • Minimum noise figure NFmin = 1.25 dB at 1.8 GHz 1 Outstanding Gms = 23 dB at 1.8 GHz • Pb-free RoHS compliant and halogen-free package
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BFP405
AEC-Q101
OT343
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Untitled
Abstract: No abstract text available
Text: BFP405 NPN Silicon RF Transistor • For low current applications 3 • For oscillators up to 12 GHz 2 4 • Noise figure F = 1.25 dB at 1.8 GHz 1 outstanding Gms = 23 dB at 1.8 GHz • SIEGET 25 GHz fT - Line • Pb-free RoHS compliant package • Qualified according AEC Q101
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BFP405
OT343
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BFP405 ALs
Abstract: BFP405
Text: SIEGET 25 BFP405 NPN Silicon RF Transistor 3 For low current applications 4 For oscillators up to 12 GHz Noise figure F = 1.25 dB at 1.8 GHz outstanding G ms = 23 dB at 1.8 GHz 2 Transition frequency f T = 25 GHz Gold metallization for high reliability
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BFP405
VPS05605
OT343
-j100
Aug-20-2001
BFP405 ALs
BFP405
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BFP405 ALs
Abstract: No abstract text available
Text: SIEGET 25 BFP405 NPN Silicon RF Transistor 3 For low current applications 4 For oscillators up to 12 GHz Noise figure F = 1.25 dB at 1.8 GHz outstanding G ms = 23 dB at 1.8 GHz 2 Transition frequency f T = 25 GHz Gold metallization for high reliability
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BFP405
VPS05605
OT343
BFP405 ALs
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rx 3152
Abstract: A1306 2Q394 IC LP7 A-1306 500R BFP405 BGC405 Q62702-G0091 RX82 equivalent
Text: BGC405 Self-Biased BFP405 l l l l l SIEGET25- Technology Small SCT598-Package Control Pin For Switching The Device Off Current Easy Adjustable By An External Resistor Voltage Independent Current 2V – 4.5V 8 7 6 5 2 1 3 4 VPW05982 ESD: Electrostatic discharge sensitive device, observe
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BGC405
BFP405
SCT598-Package
VPW05982
Q62702-G0091
SCT598
BGC405
s000E
rx 3152
A1306
2Q394
IC LP7
A-1306
500R
BFP405
Q62702-G0091
RX82 equivalent
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a06 transistor
Abstract: TRANSISTOR A06 Code "A06" RF Semiconductor marking AAAA marking A06 BF 184 transistor BFP405 a06 transistor 165 chip diode 047 SIEMENS BFP405
Text: SIEGET 25 BFP405 NPN Silicon RF Transistor Low Current Applications l For Oscillators up to 12 GHz l For Noise Figure F = 1.15 dB at 1.8 GHz l Outstanding G = 22 dB at 1.8 GHz Transition Frequency f = 25 GHz l Gold metalization for high reliability l SIEGET 25-Line
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BFP405
1512dB
25-Line
OT343
Q62702-F-1592
a06 transistor
TRANSISTOR A06
Code "A06" RF Semiconductor
marking AAAA
marking A06
BF 184 transistor
BFP405
a06 transistor 165
chip diode 047
SIEMENS BFP405
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RF TRANSISTOR 10GHZ
Abstract: BFP405 10GHz oscillator RF TRANSISTOR 10GHZ low noise TRANSISTOR NPN 5GHz BGA420 BFP405 ALs 2n2222+spice+model
Text: BFP405 NPN Silicon RF Transistor • For low current applications 3 • For oscillators up to 12 GHz 2 4 • Noise figure F = 1.25 dB at 1.8 GHz 1 outstanding Gms = 23 dB at 1.8 GHz • SIEGET 25 GHz fT - Line • Pb-free RoHS compliant package • Qualified according AEC Q101
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BFP405
OT343
RF TRANSISTOR 10GHZ
BFP405
10GHz oscillator
RF TRANSISTOR 10GHZ low noise
TRANSISTOR NPN 5GHz
BGA420
BFP405 ALs
2n2222+spice+model
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resonator B69500-A9107 siemens
Abstract: microwave transistor siemens B69500-A9107 BFP405 x-band dro MMIC A04 mtt siemens SIEMENS BFP405 Siemens Microwave blocking oscillator uses
Text: Application Note No. 002 Discrete & RF Semiconductors SIEGET 25 Silicon BipolarDielectric Resonator Oscillator DRO at 10 GHz Oscillators represent the basic microwave energy source for all microwave systems such as radar, communications and navigation. A typical oscillator essentially consists of an active
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BFP405
resonator B69500-A9107 siemens
microwave transistor siemens
B69500-A9107
BFP405
x-band dro
MMIC A04
mtt siemens
SIEMENS BFP405
Siemens Microwave
blocking oscillator uses
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Dielectric Resonator Oscillator DRO
Abstract: resonator B69500-A9107 siemens B69500-A9107 dielectric resonator oscillator B69500 design dielectric resonator oscillator x-band dro design DRO microwave transistor siemens BFP405
Text: A p p l i c a t i o n N o t e , R e v . 2 . 1 , J u l y 2 00 7 A p p li c a t i o n N o t e N o . 0 0 2 Silicon Bipolar - Dielectric Resonator Oscillator D R O a t 1 0 G H z us i n g B F P 4 0 5 R F & P r o t e c ti o n D e v i c e s Edition 2007-07-12
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Mtt-16,
MTT-27,
Dielectric Resonator Oscillator DRO
resonator B69500-A9107 siemens
B69500-A9107
dielectric resonator oscillator
B69500
design dielectric resonator oscillator
x-band dro
design DRO
microwave transistor siemens
BFP405
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BFP405
Abstract: AN021 BCR400W
Text: A pp li c at i on N ot e , R ev . 2. 0 , N ov . 2 00 6 A p p li c a t i o n N o t e N o . 0 2 1 A Lo w - N o i s e - A m p l i f i e r s h o w s g o o d N o i s e F ig u r e p e r fo r m a n c e a t 1 . 9 G H z u s i n g B F P 40 5 R F & P r o t e c ti o n D e v i c e s
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BFP405
Abstract: BCR400W
Text: A pp li c at i on N ot e , R ev . 2. 0 , N ov . 2 00 6 A p p li c a t i o n N o t e N o . 0 1 9 A Lo w - N o i s e - A m p l i f i e r w i t h g o o d I P 3o u t p e r fo r m a n c e a t 1 . 9 G H z u s i n g B F P 40 5 R F & P r o t e c ti o n D e v i c e s
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SRF 1585
Abstract: BFP405 rohde schwarz BFP405F
Text: Ap pl ica t io n N o te, Re v. 1 . 2, F e br ua ry 2 00 8 A p p li c a t i o n N o t e N o . 1 4 9 1 . 8 V , 2 .6 m A L o w N o i s e A m p l if i e r fo r 1 57 5 M H z G P S L1 F r e q ue n c y w i t h t h e B F P 4 0 5 R F T r a n s i s t o r R F & P r o t e c ti o n D e v i c e s
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BGT24MTR11
Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
BF770A
BF771
BF799
BF799W
BFP181
BFP182
BFP182R
BFP182W
BGT24MTR11
AZ1045-04F
BAR86-02LRH
24GHz Radar
BGA628L7
SMV1705
BFR181W
ALPHA&OMEGA DATE CODE
marking code onsemi Diode
2SC4586
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CDSCB10M7GA136
Abstract: rt data saw 433 rx tx switch 433 BFP450 10dBm saw transistor transmitter CB9 smd transistor Ceramic filter 107ma TH7122.1 murata 10.7MA ceramic filter SFECF10M7HA00
Text: Application Note Transceiver TH7122x External PA, LNA and TX/RX switch TH7122 and TH71221 with External PA and LNA The output power and the sensitivity of TH7122x transceivers for SRD are enough for many applications. They can deliver up to 10dBm output power and have a sensitivity of up to -105dBm in FSK mode.
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TH7122x
TH7122
TH71221
TH7122x
10dBm
-105dBm
AN7122x
Feb/07
CDSCB10M7GA136
rt data saw 433
rx tx switch 433
BFP450
10dBm saw transistor transmitter
CB9 smd transistor
Ceramic filter 107ma
TH7122.1
murata 10.7MA ceramic filter
SFECF10M7HA00
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XM0830SJ
Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
BF770A
BF771
BF775
BF799
BF799W
BFP181
BFP181R
BFP182
XM0830SJ
smd code marking 162 sot23-5
MARKING V14 SOT23-5
RF Transistor Selection
smd code marking rf ft sot23
smd code marking NEC rf transistor
sot-363 inf
smd marking D3 SOT363
XM0860SH
MGA51563
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SIEMENS BFP405
Abstract: marking A06 transistor A06
Text: SIEMENS SIEGET 25 BFP405 NPN Silicon RF Transistor • • • • • • For Low Current Applications For Oscillators up to 12 GHz Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 22 dB at 1.8 GHz Transition Frequency fT = 25 GHz Gold metalization for high reliability
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BFP405
25-Line
Transistor25
62702-F-1592
OT343
SIEMENS BFP405
marking A06
transistor A06
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BF 274 transistor
Abstract: CBC 548 B CBC 184 b transistor up/rse cima BF 184 transistor
Text: SIEM EN S NPN Silicon RF Transistor BFP 405 Featu res • • • For Low C urrent A pplicatio ns For O s cillators up to 12 GHz N oise Figure F = 1.15 dB at 1.8 G H z O utstand in g Gms = 22 dB at 1.8 G H z • • T ransition Frequ ency f j > 20 G H z G old m e talization for high reliability
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BFP405
BF 274 transistor
CBC 548 B
CBC 184 b transistor
up/rse cima
BF 184 transistor
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