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    bfg235

    Abstract: No abstract text available
    Text: BFG235 NPN Silicon RF Transistor  For low-distortion broadband output amplifier 4 stages in antenna and telecommunication systems up to 2 GHz at collector currents from 120 mA to 250 mA 3  Power amplifiers for DECT and PCN systems 2  Integrated emitter ballast resistor


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    PDF BFG235 VPS05163 BFG235 OT223

    INFINEON marking amplifier

    Abstract: BFG235
    Text: BFG235 NPN Silicon RF Transistor  For low-distortion broadband output amplifier 4 stages in antenna and telecommunication systems up to 2 GHz at collector currents from 120 mA to 250 mA 3  Power amplifiers for DECT and PCN systems 2  Integrated emitter ballast resistor


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    PDF BFG235 VPS05163 BFG235 OT223 INFINEON marking amplifier

    BFG235

    Abstract: BFG235 - BFG235 BCP52-16
    Text: BFG235 NPN Silicon RF Transistor* • For low-distortion broadband output amplifier stages in antenna and telecommunication 4 3 2 systems up to 2 GHz at collector currents from 1 120 mA to 250 mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor


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    PDF BFG235 BFG235 OT223 BFG235 - BFG235 BCP52-16

    BFG235 - BFG235

    Abstract: BFG235 BCP52-16
    Text: BFG235 NPN Silicon RF Transistor* • For low-distortion broadband output amplifier stages in antenna and telecommunication 4 3 systems up to 2 GHz at collector currents from 2 1 120 mA to 250 mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor


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    PDF BFG235 BFG235 OT223 BFG235 - BFG235 BCP52-16

    BFG235

    Abstract: Q62702-F1432 TS1600
    Text: BFG 235 NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 120mA to 250mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor


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    PDF 120mA 250mA OT-223 BFG235 Q62702-F1432 900MHz 200mA Dec-13-1996 Q62702-F1432 TS1600

    BFG235

    Abstract: BFG 235 VPS05163 BFG235 - BFG235
    Text: BFG 235 NPN Silicon RF Transistor  For low-distortion broadband output amplifier 4 stages in antenna and telecommunication systems up to 2 GHz at collector currents from 120 mA to 250 mA 3  Power amplifiers for DECT and PCN systems 2  Integrated emitter ballast resistor


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    PDF VPS05163 BFG235 OT-223 900MHz 200mA Oct-27-1999 BFG235 BFG 235 VPS05163 BFG235 - BFG235

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


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    PDF F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101

    2SK170BL

    Abstract: 2SK508 tcxo philips 4322 BFG135 power amplifier for 900Mhz 2SK147BL 2sk162 hitachi 2sk170y toshiba 2sk170bl BF1009SW philips rf manual
    Text: 4th edition RF Manual product & design manual for RF small signal discretes Page: 1 Philips RF Manual product & design manual for RF small signal discretes 4 edition March 2004 th / discretes/documentation/rf_manual


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    PDF BF1107/8 BGA2715-17 BGA6x89 2SK170BL 2SK508 tcxo philips 4322 BFG135 power amplifier for 900Mhz 2SK147BL 2sk162 hitachi 2sk170y toshiba 2sk170bl BF1009SW philips rf manual

    FN1016

    Abstract: 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016
    Text: ТРАНЗИСТОРЫ БИПОЛЯРНЫЕ ИМПОРТНЫЕ Наименование 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 Metal 2N2222A 2N2222Aмет 2N2369 2N2369A 2N2646 2N2905A 2N2905Aпластик 2N2907 2N2907(Metal) 2N3055 2N3055 2N3440 2N3773


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    PDF 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 2N2222A 2N2369 2N2369A FN1016 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016

    2SK163

    Abstract: BB142 BF245c SMD BF245A spice ON4831-2 BB184LX BF1109 spice bf998 2SK508 BFG480W
    Text: RF!๮֩!‫ڼ‬7Ӳ RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2005౎11ሆ ݀քන೺;!!2005౎11ሆ! ࿔ॲຩႾࡽǖ!9397 750 15371 Henk Roelofs-!ޭጺ֋!&!ጺঢ়૙!RFׂ೗ Ⴞჾ ࣌ᆓ۩ለ‫ڼ‬7ӲRF๮֩ă࿢்ඓ႑Ljएᇀᆌᆩ႑တ‫ڦ‬ඇ঍ࢻ๕֡ፕႎঋ‫ࣷॽۅ‬๑౞इᅮ‫ݩ‬റLj࿢்‫ڦ‬


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    PDF TZA30x6 2SK163 BB142 BF245c SMD BF245A spice ON4831-2 BB184LX BF1109 spice bf998 2SK508 BFG480W

    Audio Power Amplifier MOSFET TOSHIBA

    Abstract: P-Channel Depletion Mosfets RF MODULE CIRCUIT DIAGRAM dect gaas fet vhf uhf varicap diode Laser Diode for dvd 500 mW 2SK508 J113 equivalent BGY88/04 MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
    Text: Semiconductors RF Manual 6th edition Application and design manual for RF products May 2005 date of release: May 2005 document order number: 9397 750 15125 Semiconductors Henk Roelofs,Vice President & General Manager RF Products Introduction The RF Manual covers a broad variety of material and many aspects about RF systems. It shows


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    MRF581

    Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
    Text: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ


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    tcxo philips 4322

    Abstract: philips tcxo 4322 190 ISO9001-Certified philips bfq32 philips bare die datasheet 2SK170BL ON4749 philips BFG196 S8740230 toshiba fet databook 2sk162 hitachi
    Text: RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors RF Manual Philips Semiconductors 5th edition Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The


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    BFQ93A

    Abstract: Philips varicap BFG18 MPF102 modelS philips catv 860 amplifier ic BFG480W j175 fet 2SK163 2SK43 transistor baw 92
    Text: RF 매뉴얼 7차판 Application and design manual for RF products November 2005 발행일: 2005년 11월 문서 주문 번호: 9397 750 15371 Philips RF Manual 7th Edition 2 Henk Roelofs 부사장 겸 사업부장 RF 제품부 개 요 당사의 RF 매뉴얼 7차판을 찾아주신 고객님을 환영합니다. 저희는 애플리케이션에 기반한 정보에 완전


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    2SK163 spice model

    Abstract: BF256B spice model bf245b spice model TRANSISTOR SMD wb BGY88 spice model bf1202 Microwave GaAs FET catalogue 2sk163 BSS83 spice model BAW 62 SOT23
    Text: RF Manual 7 edition th Application and design manual for RF products November 2005 date of release: November 2005 document order number: 9397 750 15371 Henk Roelofs,Vice President & General Manager RF Products Introduction Welcome to the 7th edition of our RF Manual. We knew that the new focus of applicationbased information with fully interactive operation would pay off, but the appreciation expressed


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    CGD923

    Abstract: 2SK163 BFG480W 3SK290 BF1009SW bf998 BFG591 amplifier 1T404A 2N5116 2N5653
    Text: セミコンダクタ RFマニュアル第6版 RF製品のアプリケーションおよびデザイン・マニュアル 2005年5月 リリース日付:2005年5月 ドキュメント注文番号: 9397 750 15125 セミコンダクタ RF製品担当副社長兼ジェネラル・マネージャ


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    PDF solutions/multimarket/transistors/25 CGD923 2SK163 BFG480W 3SK290 BF1009SW bf998 BFG591 amplifier 1T404A 2N5116 2N5653

    Sony Semiconductor Replacement Handbook 1991

    Abstract: 2sc5088 horizontal transistors tcxo philips 4322 20000w audio amplifier circuit diagram replacement for 2sc5088 horizontal transistors motorola power fet rf databook 2SK170BL Funkamateur transistor 1060 schematic diagram tv sony
    Text: Philips RF Manual product & design manual for RF small signal discretes 3 edition July 2003 rd / discretes/documentation/rf_manual Document number: 4322 252 06384 Date of release: July 2003 3rd edition


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    BGT24MTR11

    Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
    Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


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    PDF 24GHz BF517 BF770A BF771 BF799 BF799W BFP181 BFP182 BFP182R BFP182W BGT24MTR11 AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586

    2sc3052ef

    Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
    Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters


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    PDF 24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor

    nec d882

    Abstract: D882 NEC nec d882 p j112 fet 2SK163 2SK508 D7540185 ON4831-2 MC7722 3SK290
    Text: Se m i c o n d u c t o r s RF 手册 第 6版 RF 产品的应用和设计手册 2005年5月 发布日期: 2005 年5月 文件顺序号:9397 750 15125 Semiconductors Henk Roelofs, 副总裁&总经理 RF产品 序言 RF手册涉及了材料和许多关于RF系统方面的广泛领域。产品范围包括:RF小信号分


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    2N2222A-PL

    Abstract: 2sc3883 2sc9018 BF759 2N3055-DIV SS8050 smd 2S-C3883 2SC945 smd smd 2n3055 bu415a
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 T p a H 3 M CTopbi N P N c o p T M p o B K a n o H a n p flw e H M r o Kofl: BFP520 BFG410W BFP405 BFP420 BFP450 BFP540 2SC5088 BFG235 BFR91A BF763 BFG540W BFG94 BFR90A BFR91 BFR92A BFR93A


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    PDF BFP520 OT343R BFG410W BFP405 BFP420 BFP450 2N2222A-PL 2sc3883 2sc9018 BF759 2N3055-DIV SS8050 smd 2S-C3883 2SC945 smd smd 2n3055 bu415a

    BFG235

    Abstract: No abstract text available
    Text: SIEMENS BFG 235 NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 120mA t<5 250mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor


    OCR Scan
    PDF 120mA 250mA Q62702-F1432 BFG235 OT-223 fi535b05 900MHz fl235bD5 BFG235

    marking code AC sot 23-5

    Abstract: marking BFG
    Text: SIEMENS BFG 235 NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 120mA to 250mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor


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    PDF 120mA 250mA OT-223 BFG235 Q62702-F1432 900MHz marking code AC sot 23-5 marking BFG

    BF777W

    Abstract: BFR93W BF606A BFE193 BFQ69 BFP183 BFS480 BFW92 sot23 BF777 BF606
    Text: RF Bipolar Transistors For com plete package outlines, refer to pages PO-1 through PO-6 T yp e M a x im u m Ratings VCEO 'c N=NPN /t V mA mW GHz dB 'c mA VCE / V MHz 15 40 20 35 35 20 25 30 30 12 12 12 12 20 20 20 20 40 40 12 12 12 12 15 15 12 15 12 15 16


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    PDF 6SOT323 OT323 BF777W BFR93W BF606A BFE193 BFQ69 BFP183 BFS480 BFW92 sot23 BF777 BF606