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NXP Semiconductors BF996S,215 RF MOSFET 15V SOT143B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BF996S,215	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Philips Semiconductors BF996S
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	BF996S		650			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	BF996S		520			1 $3.44 10 $3.44 100 $3.44 1000 $1.419 10000 $1.419	Buy Now
Siemens BF996SE-6327 Electronic Component
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	BF996SE-6327		3,347			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Philips E C G Inc BF996S Electronic Component
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	BF996S		1,412			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies BF996SAGS08 N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE, DEPLETION MODE RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	BF996SAGS08		109			1 - 10 - 100 - 1000 - 10000 -	Get Quote

BF996S Datasheets (22)

Part	Manufacturer	Description	Datasheet Type	PDF
BF 996 S	Infineon Technologies	TRANS MOSFET N-CH 20V 0.03A 4SOT-143	Original	PDF
BF996S	NXP Semiconductors	BF996S - N-channel dual-gate MOS-FET - CIS TYP: 2.3 pF; COS: 0.8 pF; ID: 30 mA; IDSS: 4 to 20 mA; IDSS min.: 0.8 mA; Noise figure: 1.8@800MHz dB; Note: With external bias ; Remarks: UHF ; -V(P)GS MAX: 2.5 V; VDSmax: 20 V; YFS min.: 15 mS	Original	PDF
BF996S	Philips Semiconductors	N-channel dual-gate MOS-FET	Original	PDF
BF996S	Philips Semiconductors	Silicon N-Channel Dual Gate MOS FET	Original	PDF
BF996S	Siemens	Cross Reference Guide 1998	Original	PDF
BF996S	Siemens	Silicon N Channel MOSFET Tetrode (For input stages in UHF TV tuners High transconductance Low noise figure)	Original	PDF
BF996S	Vishay Telefunken	TRANS MOSFET N-CH 20V 0.03A 4SOT-143	Original	PDF
BF996S	Vishay Telefunken	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode	Original	PDF
BF996S	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BF996S	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BF996S	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
BF996S	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
BF996S	Philips Semiconductors	SILICON N-CHANNEL DUAL GATE MOS-FET	Scan	PDF
BF996S	Philips Semiconductors	Silicon N-Channel Dual Gate MOS FET	Scan	PDF

BF996S,215	NXP Semiconductors	BF996 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MICRO MINIATURE, PLASTIC, SMD, 4 PIN, FET RF Small Signal	Original	PDF
BF996S,215	NXP Semiconductors	N-channel dual-gate MOS-FET - CIS TYP: 2.3 pF; COS: 0.8 pF; I_D: 30 mA; I_DSS: 4 to 20 mA; I_DSS min.: 0.8 mA; Noise figure: 1.8@800MHz dB; Note: With external bias ; Remarks: UHF ; -V(P)GS MAX: 2.5 V; V_DSmax: 20 V; Y_FS min.: 15 mS; Package: SOT143B (SOT4); Container: Tape reel smd	Original	PDF
BF996SA	Vishay Telefunken	N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode	Original	PDF
BF996SB	Vishay Telefunken	N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode	Original	PDF
BF996S-GS08	Vishay Telefunken	TRANS MOSFET N-CH 20V 0.03A 4SOT-143	Original	PDF
BF996ST/R	NXP Semiconductors	N-channel dual-gate MOS-FET - CIS TYP: 2.3 pF; COS: 0.8 pF; I_D: 30 mA; I_DSS: 4 to 20 mA; I_DSS min.: 0.8 mA; Noise figure: 1.8@800MHz dB; Note: With external bias ; Remarks: UHF ; -V(P)GS MAX: 2.5 V; V_DSmax: 20 V; Y_FS min.: 15 mS	Original	PDF

BF996S Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: BF996S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages in UHF tuners. Features D Integrated gate protection diodes D Low noise figure	Original	PDF	BF996S BF996S D-74025 20-Jan-99
Untitled Abstract: No abstract text available Text: BF996S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • Integrated gate protection diodes Low noise figure e3 Low feedback capacitance High cross modulation performance Low input capacitance	Original	PDF	BF996S 2002/95/EC 2002/96/EC OT-143 08-Apr-05
Untitled Abstract: No abstract text available Text: BF996SR Transistors N-Channel; Dual-Gate Tetrode MOSFET V BR DSS (V)20 V(BR)GSS (V)17 I(D) Max. (A)30m I(DM) Max. (A) Pulsed I(D) @Temp (øC) Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Amb.	Original	PDF	BF996SR
BF996S Abstract: GPS25 829 Tetrode Text: BF996S N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuner. Features D High cross modulation performance D Low input capacitance D High AGC-range	Original	PDF	BF996S BF996S 30the D-74025 17-Apr-96 GPS25 829 Tetrode
Untitled Abstract: No abstract text available Text: BF996S VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance Low input capacitance	Original	PDF	BF996S OT-143 D-74025 20-Aug-04
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DAT BF996S N-channel dual-gate MOS-FET Product specification April 1991 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF996S FEATURES DESCRIPTION • Protected against excessive input voltage surges by integrated back-to-back diodes between gates	Original	PDF	BF996S OT143 R77/02/pp8
BF996S Abstract: No abstract text available Text: BF996S VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance Low input capacitance	Original	PDF	BF996S OT-143 D-74025 30-Aug-04 BF996S
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DATA SHEET BF996S N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF996S FEATURES DESCRIPTION • Protected against excessive input voltage surges by	Original	PDF	BF996S OT143
marking code cig Abstract: fet dual gate sot143 Dual-Gate Mosfet BF996S dual-gate p 1S marking SOT143 Text: DISCRETE SEMICONDUCTORS DATA SHEET BF996S N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF996S FEATURES DESCRIPTION • Protected against excessive input voltage surges by	Original	PDF	BF996S OT143 marking code cig fet dual gate sot143 Dual-Gate Mosfet BF996S dual-gate p 1S marking SOT143
Untitled Abstract: No abstract text available Text: BF996S Transistors N-Channel; Dual-Gate Tetrode MOSFET V BR DSS (V)20 V(BR)GSS (V)20 I(D) Max. (A)30m I(DM) Max. (A) Pulsed I(D) @Temp (øC) Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Amb.480	Original	PDF	BF996S
BF996S Abstract: marking code cig dual-gate Text: DISCRETE SEMICONDUCTORS DATA SHEET BF996S N-channel dual-gate MOS-FET Product specification April 1991 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF996S FEATURES DESCRIPTION • Protected against excessive input voltage surges by	Original	PDF	BF996S OT143 R77/02/pp8 BF996S marking code cig dual-gate
BF996S Abstract: No abstract text available Text: BF996S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • Integrated gate protection diodes Low noise figure e3 Low feedback capacitance High cross modulation performance Low input capacitance	Original	PDF	BF996S 2002/95/EC 2002/96/EC OT-143 08-Apr-05 BF996S
BF996S Abstract: BF996SA BF996SB Text: BF996S Vishay Semiconductors N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages in UHF tuners. Features D Integrated gate protection diodes D Low noise figure	Original	PDF	BF996S BF996S D-74025 20-Jan-99 BF996SA BF996SB
BF996S Abstract: BF996SA BF996SB Text: BF996S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages in UHF tuners. Features D Integrated gate protection diodes D Low noise figure	Original	PDF	BF996S BF996S D-74025 20-Jan-99 BF996SA BF996SB

Untitled Abstract: No abstract text available Text: BF996S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • Integrated gate protection diodes Low noise figure e3 Low feedback capacitance High cross modulation performance Low input capacitance	Original	PDF	BF996S 2002/95/EC 2002/96/EC OT-143 D-74025 15-Apr-05
S852T Abstract: BF579 T0-50 BF964S BF96 BFP183T Text: Tem ic Semiconduct ors Selector Guide Dual-Gate Si-MOSFETs N-Channel Depletion Mode Number BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T VD5 V 20 20 20 12 20 20 20 12 20 10 lümax mA 30 30 30 30 30 30 30 30 30 20 Iy2isl at Ids mA mS 15	OCR Scan	PDF	BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T S852T BF579 T0-50 BF96 BFP183T
fet MARKING MHp Abstract: sot143 code marking MS FET marking code marking ANs marking L1 fet BF996S Text: BF996S PHILIPS INTERNATIONAL 5 bE D 711002b D 0 3 l+D7û ÖTß • PHIN F O R D E T A IL E D IN F O R M A T IO N SEE T H E L A T E S T ISSUE OF H A N D B O O K SC07 O R D A T A S H E E T T - 35-27 SILICON N-CHANNEL DUAL GATE MOS-FET D e pletion ty p e fie ld -e ffe c t tra n sisto r in a plastic SO T143 m icro m in ia tu re envelope w ith source and	OCR Scan	PDF	BF996S OT143 OT143. fet MARKING MHp sot143 code marking MS FET marking code marking ANs marking L1 fet BF996S
Q03407 Abstract: No abstract text available Text: BF996S PHILIPS INTERNATIONAL SbE D 711002b Q03407Ö • PHIN F O R D E T A I L E D IN F O R M A T IO N S E E T H E L A T E S T IS S U E O F H A N D B O O K S C 0 7 O R D A T A S H E E T T - 3 5 -2 7 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic S O T 1 4 3 microminiature envelope with source and	OCR Scan	PDF	BF996S 711002b Q03407Ö Q03407
BF996 Abstract: BF 996 S BF996S Text: Tem ic BF996S Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode £ Applications Electrostatic sensitive device. Observe precautions for handling. *' Input and mixer stages in UHF tuner. Features • Integrated gate protection diodes	OCR Scan	PDF	BF996S BF996S 03-Mar-97 BF996 BF 996 S
marking code 11G1 Abstract: No abstract text available Text: b b S B ' m 0DE4750 462 « A P X N AMER PHILIPS/DISCRETE BF996S b7E » y v . SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended for UHF applications in television tuners.	OCR Scan	PDF	0DE4750 BF996S OT143 marking code 11G1
BF996S Abstract: marking ANs Text: VllDÖSt. □□L.&Tlb EflQ IPHIN BF996S SILICON N-CHANNEL DUAL GATE MOS-FET D epletion ty p e fie ld -e ffe c t tran sisto r in a plastic SO T143 m icro m in ia tu re envelope w ith source and substrate interconnected and intended fo r U H F applications in television tuners.	OCR Scan	PDF	7110fl2ti BF996S OT143 BF996S marking ANs
Untitled Abstract: No abstract text available Text: 7 UDÖEL. QDt.a?lb EflO HIPHIN BF996S SILICON N-CHANNEL DUAL GATE MOS-FET D ep letio n ty p e fie ld -e ffe c t transistor in a plastic S O T 1 4 3 m icro m in ia tu re envelope w ith source and substrate interconnected and intended fo r U H F applications in television tuners.	OCR Scan	PDF	BF996S
Untitled Abstract: No abstract text available Text: BF996S _ J SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended for UHF applications in television tuners. The device is also suitable for use in professional communication equipment.	OCR Scan	PDF	BF996S OT143
Untitled Abstract: No abstract text available Text: BF996S v m rn r ▼ Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode E lectrostatic sensitive device. O bserve precautions fo r handling. A Applications Input- and m ixer stages in UHF tuners. Features • Integrated gate protection diodes	OCR Scan	PDF	BF996S BF996S D-74025 20-Jan-99

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NXP Semiconductors BF996S,215

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BF996S Datasheets (22)

BF996S Datasheets Context Search

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