BF 234 TRANSISTOR Search Results

BF 234 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

BF 234 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BFG425W Abstract: amplifier 2606 BFG425 BFG21W STR 6507 texas rf power transistor transistor bf 203 PHILIPS TRANSISTORS Text: APPLICATION INFORMATION 2.4 GHz power amplifier with the BFG425W and the BFG21W Philips Semiconductors Application information 2.4 GHz power amplifier with the BFG425W and the BFG21W ABSTRACT • Description of the product The BFG425W is a double polysilicon wideband transistor and the BFG21W is a double polysilicon bipolar power	Original	PDF	BFG425W BFG21W BFG21W 603508/01/pp12 amplifier 2606 BFG425 STR 6507 texas rf power transistor transistor bf 203 PHILIPS TRANSISTORS
BF199 Abstract: BF 234 transistor BP317 data bf199 transistor NPN BF199 Text: 00-07-19 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-048-21 BF 199 trans DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF199 NPN medium frequency transistor	Original	PDF	M3D186 BF199 SCA55 117047/00/02/pp8 BF199 BF 234 transistor BP317 data bf199 transistor NPN BF199
Untitled Abstract: No abstract text available Text: SIEGET 45 BFP540F NPN Silicon RF Transistor Preliminary data XYs For highest gain low noise amplifier at 1.8 GHz 3 Outstanding Gma = 20 dB 2 4 Noise Figure F = 0.9 dB 1 Gold metallization for high reliability SIEGET 45 - Line TSFP-4 to p v ie w !	Original	PDF	BFP540F Dec-07-2001
BFP540F Abstract: No abstract text available Text: SIEGET 45 BFP540F NPN Silicon RF Transistor Preliminary data XYs For highest gain low noise amplifier at 1.8 GHz 3 Outstanding Gma = 20 dB 2 4 Noise Figure F = 0.9 dB 1 Gold metallization for high reliability SIEGET 45 - Line TSFP-4 to p v ie w !	Original	PDF	BFP540F Aug-09-2001 BFP540F
BFP540 Abstract: No abstract text available Text: BFP540 NPN Silicon RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding G ms = 21 dB Noise Figure F = 0.9 dB 2 • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BFP540 VPS05605 OT343 50Ohm -j100 Jan-28-2004 BFP540
marking ats Abstract: BFP540F Text: BFP540F XYs NPN Silicon RF Transistor • For highest gain low noise amplifier 3 2 at 1.8 GHz 4 • Outstanding Gms = 20 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET TSFP-4 45 - Line to p v ie w 3 4 A T s 1 2 d ir e c tio n o f u n r e e lin g	Original	PDF	BFP540F Jan-28-2004 marking ats BFP540F
BFP540 Abstract: 030232 Text: BFP540 NPN Silicon Germanium RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding G ms = 21 dB 2 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BFP540 VPS05605 OT343 50Ohm -j100 Aug-29-2003 BFP540 030232
BFP540F Abstract: No abstract text available Text: BFP540F XYs NPN Silicon Germanium RF Transistor • For highest gain low noise amplifier 3 2 at 1.8 GHz 4 • Outstanding G ms = 20 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET TSFP-4 45 - Line to p v ie w " ! A T s	Original	PDF	BFP540F Sep-05-2003 BFP540F
Untitled Abstract: No abstract text available Text: BFP540 NPN Silicon Germanium RF Transistor 3 4 For highest gain low noise amplifier at 1.8 GHz Outstanding Gms = 21 dB 2 Noise Figure F = 0.9 dB Gold metallization for high reliability 1 SIEGET 45 - Line VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BFP540 VPS05605 OT343 50Ohm -j100 Jul-14-2003
bf 233 Abstract: BF233 BF234 REED RELAY 15003 bf 137 Text: BF 233 BF 234 S I L I C O N P L A N A R NPN AM MIXER OSCILLATOR, AM-FM IF AMPLIFIER The BF233 and BF 234 are silico n planar epitaxial NPN transistors in T O -18 epoxy package. They are intended fo r use in AM m ix e r/o s c illa to r stages, IF am plifiers for	OCR Scan	PDF	BF233 bf 233 BF234 REED RELAY 15003 bf 137
BF259 Abstract: bf 233 BF257 BF 235 BF258 BF258-BF259 bf 258 bf 236 A1233 Text: Silizium-NPN-Epitaxial-Planar-Transistoren Silicon NPN Epitaxial Planar Transistors Anwendungen: Video-Endstufen in Schwarz-Weiß- und Farb-FS-Empfängern. Schaltungen mit hoher Betriebsspannung Applications: Video power stages in black and white and colour TV receivers.	OCR Scan	PDF
LT 238 Abstract: BD 238 BD234 Text: PNP SILICON TRANSISTORS, EPITAXIAL BASE BD 234 TRANSISTORS S IL IC IU M PNP, BASE E P IT A X IE S g Q 2 3 0 BD 238 Compl. of BD 233, 235, 237 PRELIMINARY DATA N O TICE P R E LIM IN A IR E These transistors are intended for complemen tary or quasi complementary symetry ampli	OCR Scan	PDF
Transistoren DDR Abstract: vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369 Text: VT FUNKAMATEUR-Bauelementeinformation Vergleichsliste für Transistoren DDR/international DDR-Typ Vergleichstyp Beschreibung Hinweise SC 237/238/239 SC 307/308/309 SCE 237 SD 335/337/339 BC 237/238/239 BC 307/308/309 BC 847 BCW 71/72 BCX 70 BC 848 BCW 31/32/33/60	OCR Scan	PDF	SCE237 SCE238 SCE239 SCE308 Transistoren DDR vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369
transistor Bs 998 Abstract: No abstract text available Text: SIEM ENS Silicon N Channel MOSFET Tetrode BF 998 F e a tu re s • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz 5:1 Type B F 998 M arking MO O rd ering C o d e tape and reel 1 Q 6 2 7 0 2 -F 1 129	OCR Scan	PDF	BB515 p270k2 transistor Bs 998

BFN 15 Abstract: KTY13A SOT R25 16N250 KTY13C BF sot-89 CQV234 KTY13D CQV232 KTY13B Text: High-voltage transistors Type PNP = P NPN = N Maximum ratings h mA K ;eo V Characteristics ramb = 25 °C Pto. mW ^ FE — K* V h mA V MHz Package outlines Pin configu Type ration No. ^ CEsat h BF 622 BFN 16 BFN 18 BFN 20 BFN 22 BFN 24 BFN 26 N N N N N	OCR Scan	PDF	KTY13A KTY13B KTY13C KTY13D BFN 15 SOT R25 16N250 BF sot-89 CQV234 CQV232
SSY20 Abstract: SF828 VEB mikroelektronik funkamateur BUX 127 SF126 SF 127 SF128 SF826 SF 829 B Text: FUNKAMATEUR-Bauelementeinformation DDR-SiliziumTransistoren Typenübersicht Si-Transistoren des VEB Kombinat Mikroelektronik Grenzdaten Zonen Vorzugs anwendungen2 folge P,o, [mW, W ] Typ1 Kenndaten UcBO U ceO T • T * 1C , ACsat [V] [V] [mA, (A)] fiT3	OCR Scan	PDF
S876T Abstract: No abstract text available Text: TELEFUNKEN ELECTRONIC 1?E D • 6 T 5 0 Q c}b DüO ^blS 5 , S 876 T TFIilLtiiFMMlKilN] electronic Cfuttveüechootog* T - 3 3 - 1 3 Silicon NPN Power Transistors A p p lica tio n s: Switching mode power supply, inverters, m otor control and relay driver fe a tu re s :	OCR Scan	PDF	6T50Qc S876T
KT 819 transistor Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18 Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e	OCR Scan	PDF
KSC5027 Abstract: No abstract text available Text: KSC5027 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY i- HIGH SPEED SWITCHING WIDE SOA i T0-220 ABSOLUTE MAXIMUM RATINGS Symbol Characteristic C ollector-Base Voltage V cbo Collector-Em itter Voltage VcEO Emitter-Base Voltage C ollector C urrent DC	OCR Scan	PDF	KSC5027 T0-220 KSC5027
PA 1515 transistor Abstract: 12SW 1519b Text: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English	OCR Scan	PDF	tti-25-c) 700MHz, 120pS PA 1515 transistor 12SW 1519b
diac D30 Abstract: db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551 Text: Continental Device India Limited An IS/ISO 9002 & IECQ. certified manufacturer of quality discrete semiconductor components Surface Mount SOT-23 Semiconductors , , Transistors Z ener Diodes Switching and Schottky Diodes Quick Reference Data CONTINENTAL DEVICE INDIA LIMITED	OCR Scan	PDF	OT-23 C-120, conventN1711 2N1893 2N2102 2N2218A 2N2219A 2N3019 2N3503 2N3700 diac D30 db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551
Transistor BC 227 Abstract: transistor bf 910 CF-910 BC238C transistor marking v12 ghz transistor BF 235 Text: TELEFUNKEN ELECTRONIC âlC D • ô'téGO'ifei 000531a *5 7 W Ê M G G CF 910 Marked with: CF1 TFitLitFdflKlKdM] electronic Creative Technologies - T = - 3 / - 2 , s r N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications:	OCR Scan	PDF	000531a 569-GS Transistor BC 227 transistor bf 910 CF-910 BC238C transistor marking v12 ghz transistor BF 235
2N 2905a pnp transistor Abstract: 2904 st 2904 2N2905 2905 transistor CI 2904 2905a 2N2905A 2905 2N2904A Text: PNP SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR PNP S ILIC IU M , PLAN A R E P ITAXIAL * 2 N 2 9 0 5 , A Compì, of 2N 2218, A and 2N 2219, A ïfc Preferred device D is p o s itif recommandé • LF or HF amplification A m p lifica tio n BF ou H F v CEO	OCR Scan	PDF	2N2905 2N 2905a pnp transistor 2904 st 2904 2905 transistor CI 2904 2905a 2N2905A 2905 2N2904A
cqx 87 Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175 Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157	OCR Scan	PDF	AA113 AA117 AA119 BAV17 BAV18 BAV19 BAV20 BAV21 cqx 87 germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175

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BF 234 TRANSISTOR Search Results

BF 234 TRANSISTOR Result Highlights (5)

BF 234 TRANSISTOR Datasheets Context Search

BFG425W

BF199

Untitled

BFP540F

BFP540

marking ats

BFP540

BFP540F

Untitled

bf 233

BF259

LT 238

Transistoren DDR

transistor Bs 998

BFN 15

SSY20

S876T

KT 819 transistor

KSC5027

PA 1515 transistor

diac D30

Transistor BC 227

2N 2905a pnp transistor

cqx 87