IRHY9130CM
Abstract: IRHY93130CM JANSF2N7382 JANSR2N7382 IRHY9130
Text: Preliminary Data Sheet No. PD-9.1400A IRHY9130CM IRHY93130CM JANSR2N7382 JANSF2N7382 REPETITIVE AVALANCHE AND dv/dt RATED [REF: MIL-PRF-19500/615] P-CHANNEL HEXFET TRANSISTOR RAD HARD Ω , RAD HARD HEXFET -100Volt, 0.30Ω International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation
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IRHY9130CM
IRHY93130CM
JANSR2N7382
JANSF2N7382
MIL-PRF-19500/615]
-100Volt,
IRHY9130CM
IRHY93130CM
JANSF2N7382
JANSR2N7382
IRHY9130
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IRHM9250
Abstract: IRHM93250
Text: Provisional Data Sheet No. PD - 9.1299A IRHM9250 IRHM93250 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω, RAD HARD HEXFET -200 Volt, 0.315Ω International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability
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IRHM9250
IRHM93250
IRHM9250
IRHM93250
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5050 ir led
Abstract: IRHM57264SE
Text: PD-93798B RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM57264SE 250V, N-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level IRHM57264SE 100K Rads (Si) RDS(on) 0.066Ω ID 35A* TO-254 International Rectifier’s R5TM technology provides
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PD-93798B
O-254AA)
IRHM57264SE
IRHM57264SE
O-254
O-254AA.
MIL-PRF-19500
5050 ir led
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MIL-PRF-19500/685
Abstract: PD-95871 JANSR2N7477T1 IRHMS57264SE IRHMS57264
Text: PD-95871 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS57264SE JANSR2N7477T1 250V, N-CHANNEL REF: MIL-PRF-19500/685 5 TECHNOLOGY Product Summary Part Number IRHMS57264SE Radiation Level 100K Rads (Si) RDS(on) 0.061Ω ID QPL Part Number
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PD-95871
O-254AA)
IRHMS57264SE
JANSR2N7477T1
MIL-PRF-19500/685
O-254AA
O-254AA.
MIL-PRF-19500
MIL-PRF-19500/685
PD-95871
JANSR2N7477T1
IRHMS57264SE
IRHMS57264
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Untitled
Abstract: No abstract text available
Text: PD-95871 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS57264SE JANSR2N7477T1 250V, N-CHANNEL REF: MIL-PRF-19500/685 5 TECHNOLOGY Product Summary Part Number IRHMS57264SE Radiation Level 100K Rads (Si) RDS(on) 0.061Ω ID QPL Part Number
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PD-95871
O-254AA)
IRHMS57264SE
JANSR2N7477T1
MIL-PRF-19500/685
O-254AA
O-254AA.
MIL-PRF-19500
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Untitled
Abstract: No abstract text available
Text: PD-96916 RADIATION HARDENED POWER MOSFET SURFACE MOUNT TO-254AA Tabless IRHMJ57160 100V, N-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level IRHMJ57160 100K Rads (Si) RDS(on) 0.018Ω ID 35A* IRHMJ53160 300K Rads (Si) 0.018Ω 35A* IRHMJ54160
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PD-96916
O-254AA
IRHMJ57160
IRHMJ57160
IRHMJ53160
IRHMJ54160
IRHMJ58160
1000K
MIL-PRF-19500
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IRHMJ53160
Abstract: IRHMJ54160 IRHMJ57160 IRHMJ58160
Text: PD-96916 RADIATION HARDENED POWER MOSFET SURFACE MOUNT TO-254AA Tabless IRHMJ57160 100V, N-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level IRHMJ57160 100K Rads (Si) RDS(on) 0.018Ω ID 35A* IRHMJ53160 300K Rads (Si) 0.018Ω 35A* IRHMJ54160
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PD-96916
O-254AA
IRHMJ57160
IRHMJ57160
IRHMJ53160
IRHMJ54160
IRHMJ58160
1000K
MIL-PRF-19500
IRHMJ53160
IRHMJ54160
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IRHMK57260SE
Abstract: No abstract text available
Text: PD-96915 RADIATION HARDENED IRHMK57260SE POWER MOSFET 200V, N-CHANNEL SURFACE MOUNT Low-Ohmic TO-254AA 5 TECHNOLOGY Product Summary Part Number IRHMK57260SE Radiation Level RDS(on) 100K Rads (Si) 0.044Ω ID 45A Low-Ohmic TO-254AA Tabless International Rectifier’s R5 TM technology provides
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PD-96915
IRHMK57260SE
O-254AA)
O-254AA
MIL-PRF-19500
IRHMK57260SE
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Untitled
Abstract: No abstract text available
Text: PD-93798B RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM57264SE 250V, N-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level IRHM57264SE 100K Rads (Si) RDS(on) 0.066Ω ID 35A* TO-254 International Rectifier’s R5TM technology provides
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PD-93798B
O-254AA)
IRHM57264SE
IRHM57264SE
O-254
O-254AA.
MIL-PRF-19500
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Untitled
Abstract: No abstract text available
Text: PD-96915 RADIATION HARDENED IRHMK57260SE POWER MOSFET 200V, N-CHANNEL SURFACE MOUNT Low-Ohmic TO-254AA 5 TECHNOLOGY Product Summary Part Number IRHMK57260SE Radiation Level RDS(on) 100K Rads (Si) 0.044Ω ID 45A Low-Ohmic TO-254AA Tabless International Rectifier’s R5 TM technology provides
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PD-96915
IRHMK57260SE
O-254AA)
O-254AA
MIL-PRF-19500
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Untitled
Abstract: No abstract text available
Text: PD-91224E RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM7360SE JANSR2N7391 400V, N-CHANNEL REF:MIL-PRF-19500/661 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHM7360SE Radiation Level RDS(on) 100K Rads (Si) 0.20Ω ID QPL Part Number
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PD-91224E
O-254AA)
IRHM7360SE
JANSR2N7391
MIL-PRF-19500/661
O-254AA
applicatio54AA.
MIL-PRF-19500
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Untitled
Abstract: No abstract text available
Text: PD-96971 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMB57260SE 200V, N-CHANNEL 5 TECHNOLOGY Product Summary Part Number IRHMB57260SE Radiation Level RDS(on) 100K Rads (Si) 0.044Ω ID 45A Low-Ohmic TO-254AA International Rectifier’s R5 TM technology provides
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PD-96971
O-254AA)
IRHMB57260SE
O-254AA
O-254AA.
MIL-PRF-19500
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Untitled
Abstract: No abstract text available
Text: PD-94605A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597260 200V, P-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level IRHMS597260 100K Rads (Si) IRHMS593260 300K Rads (Si) RDS(on) 0.103Ω 0.103Ω ID -32A -32A International Rectifier’s R5TM technology provides
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PD-94605A
O-254AA)
IRHMS597260
IRHMS593260
O-254AA
O-254AA.
MIL-PRF-19500
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Untitled
Abstract: No abstract text available
Text: PD-94605B RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597260 200V, P-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level IRHMS597260 100K Rads (Si) IRHMS593260 300K Rads (Si) RDS(on) 0.103Ω 0.103Ω ID -30A -30A Low-Ohmic
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PD-94605B
O-254AA)
IRHMS597260
IRHMS597260
IRHMS593260
O-254AA
O-254AA.
MIL-PRF-19500
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JANSR2N7476T1
Abstract: No abstract text available
Text: PD - 94765 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS57260SE JANSR2N7476T1 200V, N-CHANNEL REF: MIL-PRF-19500/685 5 TECHNOLOGY Product Summary Part Number IRHMS57260SE Radiation Level 100K Rads (Si) RDS(on) 0.044Ω ID QPL Part Number
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O-254AA)
IRHMS57260SE
JANSR2N7476T1
MIL-PRF-19500/685
O-254AA
O-254AA.
MIL-PRF-19500
JANSR2N7476T1
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Untitled
Abstract: No abstract text available
Text: PD-91299E IRHM9250 JANSR2N7423 200V, P-CHANNEL REF: MIL-PRF-19500/662 RADIATION HARDENED POWER MOSFET THRU-HOLE T0-254AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number IRHM9250 IRHM93250 Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on)
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PD-91299E
IRHM9250
JANSR2N7423
MIL-PRF-19500/662
T0-254AA)
IRHM93250
JANSF2N7423
reduces54AA.
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Untitled
Abstract: No abstract text available
Text: PD-94605D RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597260 200V, P-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHMS597260 100K Rads (Si) 0.103Ω -30A IRHMS593260 300K Rads (Si) 0.103Ω -30A
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PD-94605D
O-254AA)
IRHMS597260
IRHMS597260
IRHMS593260
O-254AA
O-254AA.
MIL-PRF-19500
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IRHMB57260SE
Abstract: No abstract text available
Text: PD-96971 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMB57260SE 200V, N-CHANNEL 5 TECHNOLOGY Product Summary Part Number IRHMB57260SE Radiation Level RDS(on) 100K Rads (Si) 0.044Ω ID 45A Low-Ohmic TO-254AA International Rectifier’s R5 TM technology provides
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PD-96971
O-254AA)
IRHMB57260SE
O-254AA
O-254AA.
MIL-PRF-19500
IRHMB57260SE
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IRHMK593160
Abstract: IRHMK597160
Text: PD-96912 RADIATION HARDENED IRHMK597160 POWER MOSFET 100V, N-CHANNEL SURFACE MOUNT Low-Ohmic TO-254AA 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHMK597160 100K Rads (Si) 0.05Ω IRHMK593160 300K Rads (Si) 0.05Ω ID -45A* -45A*
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PD-96912
IRHMK597160
O-254AA)
IRHMK597160
IRHMK593160
O-254AA
MIL-PRF-19500
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Untitled
Abstract: No abstract text available
Text: PD-94605E RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597260 200V, P-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHMS597260 100K Rads (Si) 0.103Ω -30A IRHMS593260 300K Rads (Si) 0.103Ω -30A
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PD-94605E
O-254AA)
IRHMS597260
IRHMS597260
IRHMS593260
O-254AA
O-254AA.
MIL-PRF-19500
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12V 30A diode
Abstract: AS025
Text: PD-94605C RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597260 200V, P-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHMS597260 100K Rads (Si) 0.103Ω IRHMS593260 300K Rads (Si) 0.103Ω ID -30A -30A International Rectifier’s R5TM technology provides
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PD-94605C
O-254AA)
IRHMS597260
IRHMS593260
O-254AA
O-254AA.
MIL-PRF-19500
12V 30A diode
AS025
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12v 30A regulator
Abstract: 365A pin CURRENT REGULATOR 12V 30A vg 96912a IRHMK593160 IRHMK597160
Text: PD-96912A RADIATION HARDENED IRHMK597160 POWER MOSFET 100V, P-CHANNEL TECHNOLOGY SURFACE MOUNT Low-Ohmic TO-254AA Product Summary Part Number Radiation Level RDS(on) IRHMK597160 100K Rads (Si) 0.05Ω IRHMK593160 300K Rads (Si) 0.05Ω ID -45A* -45A*
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PD-96912A
IRHMK597160
O-254AA)
IRHMK597160
IRHMK593160
O-254AA
MIL-PRF-19500
12v 30A regulator
365A pin
CURRENT REGULATOR 12V 30A
vg 96912a
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD - 9.1393C International IGR Rectifier IRHM7264SE R E P E T IT IV E A V A LA N C H E A N D d v / d t R A T E D HEXFET TRANSISTOR N -C H A N N E L S IN G L E E V E N T E F F E C T S E E R A D H A R D 250Volt, 0.11Q, (SEE) RAD HARD HEXFET
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1393C
IRHM7264SE
250Volt,
4SS54S2
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD - 9.1299A International I R Rectifier IRHM9250 IRHM93250 R E P E T I T I V E A V A L A N C H E A N D d v /d t R A T E D HEXFET TRANSISTOR P -C H A N N E L RAD HARD -200 Volt, 0.315ft, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology
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IRHM9250
IRHM93250
315ft,
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