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    HY6254A-I

    Abstract: BDZ11 HYB254A-I
    Text: H Y 5254 A-I S e rie s •H YUN D AI 8 K N B - b it CM OS SRAM DESCRIPTION The HYB254A-I is a high-spBed, low power and B,192 x B-bits CMOS sialic RAM Fabricated using Hyundai's high performance twin lub CMOS process technology. This high reliability process coupled with innovative circuit


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    HYB254A-I HY6264A-I BD2-11-M HY5254A-I 094J2 7204IB2BSI ai44a 3021D 1DBD2-11-M HY6254A-I BDZ11 PDF