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    BDT62 B Search Results

    BDT62 B Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BDT62B Philips Semiconductors Silicon Darlington Power Transistor Original PDF
    BDT62B Magnatec Silicon Darlington Power Transistors Scan PDF
    BDT62B Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    BDT62B Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BDT62B Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDT62B Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BDT62B Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BDT62B Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BDT62B Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDT62B Philips Semiconductors SILICON DARLINGTON POWER TRANSISTORS Scan PDF
    BDT62BF Philips Semiconductors Silicon Darlington Power Transistor Original PDF
    BDT62BF Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDT62BF Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BDT62BF Philips Semiconductors SILICON DARLINGTON POWER TRANSISTORS Scan PDF

    BDT62 B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BDT62C

    Abstract: No abstract text available
    Text: <Se.mi- 2ondiicto^ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Darlington Power Transistors BDT62/A/B/C DESCRIPTION • DC Current Gain -hFe = 1000(Min)@ lc= -3A • Collector-Emitter Sustaining Voltage: VCEO(SUS) = -60V(Min)- BDT62; -SOV(Min)- BDT62A; •


    Original     		PDF BDT62/A/B/C BDT62; BDT62A; BDT62B; -120V BDT62C BDT63/A/B/C BDT62 BDT62A BDT62B BDT62C

    2SB1100K

    Abstract: 2SB638H 2SB1147 2SB1100M 2SB1099 2SB711 PMD13K100 2SB1099L
    Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer Ic Max V BR CEO (A) (V) PD hFE Max ON) Min Max tT 'CBO tr Max Max (HZ) (A) (8) r (CE)sat 'Oper Max (Ohms) Max (°C) Package Style Darlington Transistors, PNP (Cont'd) . . . .5 -10 . . .15 . . . .


    Original     		PDF 2N6053 PMD13K60 MJ920 2SB872A 2SB939A 2SB951A BDX54B BD266A 2SB1100K 2SB638H 2SB1147 2SB1100M 2SB1099 2SB711 PMD13K100 2SB1099L

    DK53

    Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
    Text: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513

    DK53

    Abstract: dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
    Text: Bipolar Transistors Cross Reference INDUSTY STANDARD 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    STRS6307

    Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
    Text: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173


    Original     		PDF 2N3054 2N32741 2N4240 2N4908 2N3054A 2N3766 2N4273 2N4909 2N3055 2N3767 STRS6307 STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020

    BDT62B

    Abstract: No abstract text available
    Text: BDT62; 62A BDT62B; 62C _ J K . SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m onolithic Darlington circu it for audio output stages and general am plifier and switching applications. TO-220 plastic envelope. N-P-N complements are BDT63,


    OCR Scan     		PDF BDT62; BDT62B; O-220 BDT63, bbS3T31 BDT62B

    BDT63

    Abstract: BDT62
    Text: BDT63; 63A BDT63B; 63C _A SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-220 plastic envelope. P-N-P complements are BDT62,


    OCR Scan     		PDF BDT63; BDT63B; O-220 BDT62, BDT62A; BDT62B BDT62C. BDT63 bS3T31 BDT63 BDT62

    SB 62A diode

    Abstract: BDT62 BDT63 bdt63a nas 560 BDT62B BDT63B BDT63C BDT63C PHILIPS
    Text: BDT62; 62A _ PHILIPS J DB T62B ShE D INTERNATIONAL • 00i+323fl T ä 4 « P H I N 7110a2b T - 3 ? - 3 t SILICON DARLINGTON PO W ER TRANSISTO RS P-N-P epitaxial base transistors In monolithic Darlington circuit for audio output stages and general


    OCR Scan     		PDF BDT62; BDT62B; T0-220 BDT63, BDT63A, BDT63B BDT63C. BDT62 C11Dflat SB 62A diode BDT63 bdt63a nas 560 BDT62B BDT63C BDT63C PHILIPS

    diode t62

    Abstract: No abstract text available
    Text: BDT62;-62A BDT62B; 62C J PHILIPS INTERNATIONAL SbE ]> • 7110fl2b 0043S3Ö TÔ4 M P H I N T - 3 3 - 3 / SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m onolithic Darlington circuit for audio output stages and general am plifier and switching applications. T 0 -2 2 0 plastic envelope. N-P-N complements are B D T63,


    OCR Scan     		PDF BDT62 BDT62B; 7110fl2b 0043S3Ö BDT63C BDT62; 7110flat diode t62

    philips BDV64A

    Abstract: BDX67
    Text: N AflER P H I L I P S / D I S C R E T E ESE D • bb53T31 DOltjEl? b ■ T - £ 7 -3-? Power Devices LOW VOLTAGE, GENERAL PURPOSE DARLINGTONS in order of current rating TYPE NPN PNP PACKAGE OUTLINE fC (D C )(1) V CE0 MINIMUM hpg at f(* ^ (ty p O a t V C E(s»t)


    OCR Scan     		PDF bb53T31 TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 O-220AB BD679 BD681 philips BDV64A BDX67

    transistor 1BT

    Abstract: BDT62C PHILIPS npn 1bt BDT63B
    Text: BDT63; 63A BDT63B; 63C _ PHILIPS "INTERNATIONAL" StEB A • v _ 7110flEb 0043551, TTT - PHIN T - J J - Z 7 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general


    OCR Scan     		PDF BDT63; BDT63B; 7110flEb T0-220 BDT62, BDT62A; BDT62B BDT62C. BDT63 T-33-29 transistor 1BT BDT62C PHILIPS npn 1bt BDT63B