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    STMicroelectronics L4931ABDT33-TR

    IC REG LINEAR 3.3V 250MA DPAK
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    DigiKey L4931ABDT33-TR Cut Tape 9,916 1
    • 1 $1.39
    • 10 $1.009
    • 100 $0.8108
    • 1000 $0.70691
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    L4931ABDT33-TR Digi-Reel 9,916 1
    • 1 $1.39
    • 10 $1.009
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    L4931ABDT33-TR Reel 7,500 2,500
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    Avnet Americas L4931ABDT33-TR Reel 2,500 12 Weeks 2,500
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    Mouser Electronics L4931ABDT33-TR 2,374
    • 1 $1.33
    • 10 $0.915
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    • 1000 $0.707
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    Newark L4931ABDT33-TR Cut Tape 4,122 1
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    L4931ABDT33-TR Reel 2,500
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    STMicroelectronics L4931ABDT33-TR 2,374 1
    • 1 $1.3
    • 10 $0.9
    • 100 $0.75
    • 1000 $0.72
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    Bristol Electronics L4931ABDT33-TR 12,289 4
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    • 100 $1.0312
    • 1000 $0.5775
    • 10000 $0.5445
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    TME L4931ABDT33-TR 1
    • 1 $1.266
    • 10 $0.931
    • 100 $0.72
    • 1000 $0.522
    • 10000 $0.45
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    Avnet Silica L4931ABDT33-TR 5,000 13 Weeks 2,500
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    EBV Elektronik L4931ABDT33-TR 13 Weeks 2,500
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    Win Source Electronics L4931ABDT33-TR 26,337
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    onsemi NCV4276BDT33RKG

    IC REG LINEAR 3.3V 400MA DPAK-5
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    DigiKey NCV4276BDT33RKG Cut Tape 9,830 1
    • 1 $2.33
    • 10 $1.458
    • 100 $0.9739
    • 1000 $0.70478
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    NCV4276BDT33RKG Digi-Reel 9,830 1
    • 1 $2.33
    • 10 $1.458
    • 100 $0.9739
    • 1000 $0.70478
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    NCV4276BDT33RKG Reel 7,500 2,500
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    Avnet Americas NCV4276BDT33RKG Reel 12 Weeks 2,500
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    Mouser Electronics NCV4276BDT33RKG
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    Newark NCV4276BDT33RKG Reel 2,500
    • 1 $0.817
    • 10 $0.817
    • 100 $0.817
    • 1000 $0.817
    • 10000 $0.73
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    NCV4276BDT33RKG Cut Tape 1
    • 1 $1.68
    • 10 $1.51
    • 100 $1.1
    • 1000 $0.714
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    ComSIT USA NCV4276BDT33RKG 30,000
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    Avnet Asia NCV4276BDT33RKG 12 Weeks 2,500
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    Avnet Silica NCV4276BDT33RKG 13 Weeks 2,500
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    EBV Elektronik NCV4276BDT33RKG 14 Weeks 2,500
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    STMicroelectronics L4931ABDT35TR

    IC REG LINEAR 3.5V 250MA DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey L4931ABDT35TR Digi-Reel 2,372 1
    • 1 $0.85
    • 10 $0.611
    • 100 $0.4836
    • 1000 $0.41653
    • 10000 $0.41653
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    L4931ABDT35TR Cut Tape 2,372 1
    • 1 $0.85
    • 10 $0.611
    • 100 $0.4836
    • 1000 $0.41653
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    STMicroelectronics L4931ABDT35TR 1,767 1
    • 1 $0.83
    • 10 $0.6
    • 100 $0.6
    • 1000 $0.57
    • 10000 $0.57
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    Rochester Electronics L4931ABDT35TR 90,000 1
    • 1 $0.8099
    • 10 $0.8099
    • 100 $0.7613
    • 1000 $0.6884
    • 10000 $0.6884
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    TME L4931ABDT35TR 1
    • 1 $0.805
    • 10 $0.593
    • 100 $0.472
    • 1000 $0.395
    • 10000 $0.395
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    Dremel BDT38F16

    BOSCH 3/8-16 TAP, 5/16 DRILL COM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BDT38F16 Bulk 2
    • 1 -
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    Artisan Power RB-DT390-L

    BATTERY PACK LI-ION 3.7V
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    DigiKey RB-DT390-L 1
    • 1 $24
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    BDT3 Datasheets (97)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BDT30 Philips Semiconductors Silicon Epitaxial Base Power Transistors Original PDF
    BDT30 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    BDT30 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BDT30 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDT301000 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    BDT301000C Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    BDT301200 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    BDT301200C Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    BDT30200 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    BDT30200C Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    BDT30400 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    BDT30400C Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    BDT30600 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    BDT30600C Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    BDT30800 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    BDT30800C Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    BDT30A Philips Semiconductors Silicon Epitaxial Base Power Transistors Original PDF
    BDT30A Bogen Communications Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Bi-Directional Horn Scan PDF
    BDT30A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BDT30A Unknown Shortform Transistor PDF Datasheet Short Form PDF

    BDT3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 31C

    Abstract: BDT31 NPN Transistor VCEO 80V 100V BDT31A BDT31B BDT31C BDT32
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT31/A/B/C DESCRIPTION •DC Current Gain -hFE = 25 Min @ IC= 1.0A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40V(Min)- BDT31; 60V(Min)- BDT31A 80V(Min)- BDT31B; 100V(Min)- BDT31C


    Original
    PDF BDT31/A/B/C BDT31; BDT31A BDT31B; BDT31C BDT32/A/B/C BDT31 BDT31/A BDT31B/C transistor 31C BDT31 NPN Transistor VCEO 80V 100V BDT31A BDT31B BDT31C BDT32

    df transistor

    Abstract: BDT30AF BDT30BF BDT30CF BDT30DF BDT30F
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors BDT30F/AF/BF/CF/DF DESCRIPTION •DC Current Gain -hFE = 40 Min @ IC= -0.4A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -40V(Min)- BDT30F; -60V(Min)- BDT30AF -80V(Min)- BDT30BF; -100V(Min)- BDT30CF


    Original
    PDF BDT30F/AF/BF/CF/DF BDT30F; BDT30AF BDT30BF; -100V BDT30CF -120V BDT30DF BDT29F/AF/BF/CF/DF BDT30F df transistor BDT30AF BDT30BF BDT30CF BDT30DF BDT30F

    NPN Transistor VCEO 80V 100V

    Abstract: BDT31F BDT31AF BDT31BF BDT31CF BDT31DF
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT31F/AF/BF/CF/DF DESCRIPTION •DC Current Gain -hFE = 25 Min @ IC= 1.0A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40V(Min)- BDT31F; 60V(Min)- BDT31AF 80V(Min)- BDT31BF; 100V(Min)- BDT31CF


    Original
    PDF BDT31F/AF/BF/CF/DF BDT31F; BDT31AF BDT31BF; BDT31CF BDT31DF BDT32F/AF/BF/CF/DF BDT31F BDT31BF NPN Transistor VCEO 80V 100V BDT31F BDT31AF BDT31BF BDT31CF BDT31DF

    PNP 100V 2A

    Abstract: BDT30 BDT30A BDT30B BDT30C
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors BDT30/A/B/C DESCRIPTION •DC Current Gain -hFE = 40 Min @ IC= -0.4A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -40V(Min)- BDT30; -60V(Min)- BDT30A -80V(Min)- BDT30B; -100V(Min)- BDT30C


    Original
    PDF BDT30/A/B/C BDT30; BDT30A BDT30B; -100V BDT30C BDT29/A/B/C BDT30 PNP 100V 2A BDT30 BDT30A BDT30B BDT30C

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original
    PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE SSE D • 1,1,53=131 D O I U S S a ■ BD T29; 29A BD T29B; 29C r - 33 -07 SILICON EPITAXIAL BASE POWER TRANSISTO RS N-P-N silicon transistors in a plastic envelope intended for use in output stages o f audio and television amplifier circuits where high peak powers can occur. P-N-P complements are BDT30 series.


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    PDF BDT30 TIP29 BDT29 bbS3T31 T-33-Q9

    Untitled

    Abstract: No abstract text available
    Text: II, 25E N AMER PHILIPS/DISCRETE D • . Q O nbT? ~~' b ■ BDT32; A BDT32B; C r-33-17 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic TO-220 envelope. They are intended fo r use in a wide range o f power amplifiers and for switching applications. The TIP32 series is an equivalent type. P-N-P complements


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    PDF BDT32; BDT32B; r-33-17 O-220 TIP32 BDT31 BDT32 bbS3T31

    R3309

    Abstract: 31DF 4 7 31af BDT31F R3307 31df MSI MS-5 IS551 BDT31DF BDT32AF
    Text: • ^53=131 OGlTbñi 7 BDT31F; 31AF BDT31BF; 31CF BDT31DF 2SE D N AMER PHILIPS/DISCRETE r - 3 3 - 0 7 SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT186 envGlope with an electrically insulated mounting base. They are intended for use in audio amplifier output stages, general purpose amplifiers, and high-speed


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    PDF BDT31F; BDT31BF; BDT31DF r-33-07 OT186 BDT32F, BDT32AF, BDT32BF, BDT32CF, BDT32DF. R3309 31DF 4 7 31af BDT31F R3307 31df MSI MS-5 IS551 BDT31DF BDT32AF

    30DF

    Abstract: BDT29BF 30BF BDT29AF BDT29CF BDT29DF BDT29F BDT30AF BDT30CF BDT30F
    Text: • fcifesS3 ‘IBli 0 0 1 ^ 7 3 BDT30F BDT30AF; 30BF BDT30CF; 30DF 3 2SE D N AMER P H I L I P S / D I S C R E T E SILICON EPITAXIAL POWER TRANSISTORS T “" 3 3 - 17 P-N-P silicon power transistor in a SOT-186 envelope with an electrically insulated mounting base,


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    PDF bbS3T31 BDT30F BDT30AF; BDT30CF; OT-186 BDT29F, BDT29AF, BDT29BF, BDT29CF BDT29DF. 30DF BDT29BF 30BF BDT29AF BDT29DF BDT29F BDT30AF BDT30CF

    ML2208CCJ

    Abstract: No abstract text available
    Text: MICRO LI NE AR bDT341fl DOQlflTM Sflb • ML S1E D October 1990 ”T * S I - 0 7 ¡ero Linear *O I p r e l im in a r y ML2200, ML2208 12-Bit Plus Sign Data Acquisition Peripheral GENERAL DESCRIPTION FEATURES Th e M L2200 and ML2Í208 Data Acquisition Peripherals D A P ,


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    PDF bDT341fl ML2200, ML2208 12-Bit L2200 L2208 16rbit ML2208CCJ

    Untitled

    Abstract: No abstract text available
    Text: • BDT32F; 32AF BDT32BF; 32CF^ BDT32DF bbSBTBl 0 0 M 7 0 S 1 ■ N AMER PHILIPS/DISCRETE 2SE D J V T-zz-n SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors each, in a SOT186 envelope with an electrically insulated mounting base. They are intended for use in audio amplifier output stages, general purpose amplifiers, and high-speed


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    PDF BDT32F; BDT32BF; BDT32DF OT186 BDT31F, BDT31AF, BDT31BF, BDT31CF, BDT31DF,

    ML8464

    Abstract: ML8464C
    Text: MICRO EEE LINEAR D bDT341ö Q00073b 1 T - Ä - 3 3 - '/ Micro Linear ML8464B, ML8464C Pulse Detector GENERAL DESCRIPTION FEATURES The ML8464 is a Pulse Detector designed for use in magnetic disk applications to detect the amplitude peaks on the output of the read/write amplifier. These


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    PDF bDT341ö Q00073b ML8464 i34ia ML8464B, ML8464C ML8464B ML8464C

    Untitled

    Abstract: No abstract text available
    Text: • ^53131 o a n b a i 7 N AMER PHILIPS/DISCRETE BDT31F; 31AF BDT31BF; 31CF BDT31DF 3SE D _ A r 3 3 - 0 7 - SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT186 envelope with an electrically insulated mounting base.


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    PDF BDT31F; BDT31BF; BDT31DF OT186 BDT32F, BDT32AF, BDT32BF, BDT32CF, BDT32DF. T-33-09

    BDT32

    Abstract: BDT31 BDT32B TIP32 AAA01
    Text: II, 25E D N AMER PHILIPS/DISCRETE • ' 1^ 5 3 ^ 31 Q Q l T b T ? b ■ '' BDT32; A BDT32B; C T - 3 3 -1 7 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plasticT0-220 envelope. They are intended for use in a wide range of power amplifiers and for switching applications. The TIP32 series is an equivalent type. P-N-P complements


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    PDF BDT32; BDT32B; plasticT0-220 TIP32 BDT31 BDT32 T-33-19 BDT32 BDT32B AAA01

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE- hb53T31 QQllbtn? a • BDT30;A BDT30B;C 2SE D ■ T'33-lf SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in output stages o f audio and television amplifier circuits where high peak powers can occur.The TIP 30 series is an equivalent type.


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    PDF hb53T31 BDT30 BDT30B 33-lf BDT29 BDT30 T-33-19

    32-AF

    Abstract: eto81 BDT31AF BDT31BF BDT31CF BDT31DF BDT31F BDT32BF BDT32DF BDT32F
    Text: • 1^53131 0011705 1 ■ BDT32F; 32AF 55E J> N AMER PHILIPS/DISCRETE BDT32DF 32° Fr y ^ T-3S-J SILICON EPITAXIAL P O W E R TRANSISTORS PNP silicon power transistors each, in a SOT186 envelope with an electrically insulated mounting base. They are intended for use in audio amplifier output stages, general purpose amplifiers, and high-speed


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    PDF bb53131 BDT32F; BDT32BF; BDT32DF OT186 BDT31F, BDT31AF, BDT31BF, BDT31CF, BDT31DF. 32-AF eto81 BDT31AF BDT31BF BDT31CF BDT31DF BDT31F BDT32BF BDT32DF BDT32F

    vr182

    Abstract: BDT29 BDT30 BDT30A BDT30B
    Text: ri N AMER PH ILI P S/ DI SC RE T E- bbS3ia 1 O d l U b ? a • BDT30;A BDT30B;C SSE D J T-33-/7 SILICON EPITAXIAL BASE POWER TRANSISTORS -P silicon transistors in a plastic envelope intended for use in output stages o f audio and television amplifier circuits where high peak powers can occur.The T IP 3 0 series is an equivalent type


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    PDF BDT30 BDT30B T-33-/7 BDT29 T-33-19 7Z82166 vr182 BDT30A

    Untitled

    Abstract: No abstract text available
    Text: • BDT30F BDT30AF; 30BF BDT30CF; 30DF LbS3T31 D011U7B 3 2SE D N AUER PHILIPS/DISCRETE J V SILICON EPITAXIAL POWER TRANSISTORS T " 3 3 - 17 P-N-P silicon power transistor in a SOT-186 envelope with an electrically insulated mounting base, fo r use in audio output stages and fo r general purpose amplifier and high-speed switching applications.


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    PDF BDT30F BDT30AF; BDT30CF; LbS3T31 D011U7B OT-186 BDT29F, BDT29AF, BDT29BF, BDT29CF

    Untitled

    Abstract: No abstract text available
    Text: • 25E D N AMER PHILIPS/DISCRETE bb53T31 OQnbfil 2 ■ BDT31; A BDT31B; C T '- S 3 - II SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic envelope intended for use in audio output stages and general amplifier and switching applications. The TIP31 series is an equivalent type. P-N-P complements are BDT32 series.


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    PDF bb53T31 BDT31; BDT31B; TIP31 BDT32 BDT31 T-33-11

    BR203

    Abstract: BDT31 BDT31B BDT32 TIP31
    Text: N AMER P H IL IP S /D IS C R E T E 25E D • bbS3T31 Q O l^bfil 2 ■ BDT31; A BDT31B; C "T - S 3 - II SILICON EPITAXIAL BASE POW ER TRANSISTORS N-P-N transistors in a plastic envelope intended for use in audio output stages and general amplifier and switching applications. The TIP31 series is an equivalent type, P-N-P complements are B D T 3 2 series.


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    PDF fcb53 BDT31; BDT31B; r-33-n TIP31 BDT32 BDT31 T-33-11 BR203 BDT31 BDT31B

    Untitled

    Abstract: No abstract text available
    Text: A p ril 1989 PRELIM IN ARY Micro Linear ML511, ML511 R-Series 4, 6, 7f or 8-Channel Ferrite Read /Write Circuits GENERAL DESCRIPTION FEATURES The ML511 is a bipolar monolithic read/w rite circuit designed for use with center-tapped ferrite recording heads. The


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    PDF ML511, ML511 ML511R ML501 ML501R. 32R511

    Untitled

    Abstract: No abstract text available
    Text: March 1997 MÉLMicro Linear ML6622 High-Speed Data Quantizer GENERAL DESCRIPTION FEATURES The ML6622 high-speed data quantizer post-amplifier is a low noise, wide-band, BiCM OS monolithic 1C designed for high-speed signal recovery applications, such as FD D I,


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    PDF ML6622 ML6622

    Untitled

    Abstract: No abstract text available
    Text: April 1994 Preliminary Micro Linear ML4420 Enhanced Sensortess BLDC Motor Controller GENERAL DESCRIPTION The start-up algorithm consists of measuring a fixed VCO frequency and externally ramping the commutation clock until it is equal to the VCO frequency. The timing of the


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    PDF ML4420 ML4420

    Untitled

    Abstract: No abstract text available
    Text: Septem ber 1994 Micro Linear ML4812 Power Factor Controller GENERAL DESCRIPTION FEATURES Th e M L4 8 1 2 is designed to o p tim ally facilitate a "boost" type pow er factor correction system . Special care has been taken in the design of the M L 4 8 1 2 to increase


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    PDF ML4812 ML4812CP ML4812CQ ML4812IP L4812IQ ML4812MJ